4W DC/DC converter Specifications TECHNICAL FEATURES : –Power : 4 W –Input Voltage : 22V to 37V –Output Voltage : One Adjustable Output above 3 adjustable

4W DC/DC converterSpecifications

• TECHNICAL FEATURES : – Power : 4 W– Input Voltage : 22V to 37V– Output Voltage : One Adjustable Output above 3 adjustable ranges

– 2,5V to 4V/1,2A for a 3,3V Output,– 3,5V to 6V/0,8A for a 5,0V Output, – 8,5V to 14V/0,33A for a 12,0V Output.

– Efficiency : 72 % Min– Protections : Primary Undervoltage lockout,

Output regulation from 0 to 100% load, Permanent output current limitation

– Telecommand : Inhibit function– Switching frequency : 330 KHz

• PACKAGING :– Dimensions : 32 x 21 x 10,5 mm– Weight : 20 g.

Transformer and coils layer

Power layer

Regulation layer

Efficiency of 3D DC/DC Converter between 78,7 % for the BiCMOS 12,0 V and 64,9 % for the Bipolar 3,3 V

Some Efficiency loss may be due to 3D Module plating thickness and output voltage range programming possibility (impedance mismatch and loss in the planar transformer)

4W DC/DC converter Electrical tests

BreadboardBiCmos

Breadboard Bipolar

3D moduleBiCmos

1ère version*

3D moduleBipolar

1ère version*3.3V 5V 12V 3.3V 5V 12V 3.3V 5V 12V 3.3V 5V 12V

Efficiency (%) 72.7 77.6 80.8 69.2 71.2 75.9 69.8 75.5 78.7 64.9 67.9 72.7

Line regulation (%) 0.02 0.01 0.02 0.17 0.4 0.64 0.38 0.10 0.54

Load regulation (%) 0.04 0.06 0.03 0.86 0.9 0.46 0.33 0.30 0.71

Regul T° (%) 0.40 0.38 0.29 0.44 0.2 0.73 0.17 1.21

Spikes (mVpp) 60 56 80 332 190 580 400 1000

Delta Efficiency (%) ref ref ref ref ref ref -2.9 -2.1 -2.1 -4.3 -3.3 -3.2

Delta Loss (mW) ref ref ref ref ref ref 228 178 132 382 273 231

4W DC/DC converter Radiation Tests

• DC/DC Reference Parametric TID Level (Krads) Functional TID Level (Krads)Bipolar 3,3V 50 -

Bipolar 12,0V 50 - BiCMOS 3,3V 24 40

BiCMOS 12,0V 15 24

– Radiation Tolerance of 3D DC/DC Converter between 15 Krads for the BiCMOS 12,0 V and 50 Krads for the Bipolar 3,3 V and 12,0 V

– Radiation Performance of the 3D Module significantly better than the individual components (example : The BiCMOS PWM driver was out of the range at 5 Krads)

– Heavy ions tests will be completed by end 2004.

GLOBALLY SATISFACTORY RESULTS AND START OF THE 10 W DC/DC CONVERTER DEVELOPMENT IN 2003 UNDER ESA CONTRACT.

DC/DC Converters using 3D Plus technology10W DC/DC converter

• Development of the 10W DC/DC converter started with an

ESA contract (design by GAIA and packaging by 3D PLUS)– Minimum change introduced in the 10W converter parts list

(compared to the 4W converter)– Based on 4W study, only Bipolar technology was implemented

– Topology design for 5V only (evolution to 3,3V, 10V, 12V and 15 V with minor modifications)

– TID and Heavy Ions tests to be performed at two levels :• Individual test of the critical components

• Test at Final Product level

10W DC/DC converterSpecifications

• TECHNICAL FEATURES :

– Power : 10 W– Input Voltage : 22V to 37V– Output Voltage : One Adjustable Output 5,0V/2A– Output Ripple : 50 mVpp– Set Point Accuracy : +/- 2%– Line Regulation : +/- 0,6 %– Load Regulation : +/- 0,6 %– Efficiency : > 75 % Full Load

– Protections : - Primary Under Voltage Off/On threshold 18V/20V, - Output regulation from 0 to 100% load (Permanent), - Permanent Output Current limitation

– On/Off Telecommand– Master/Slave parallelization possibility for high Power requirements

(Synchronization)

– Input Filter (differential mode)– EMI (MIL-STD-416C) with external filter– Isolation 100 MOhm @ 500 V

• PACKAGING :– Dimensions : 40 x 26 x 12 mm– Weight : 45 g.

10W DC/DC converterDevelopment progress status

• Breadboard fully compliant to specification

• 3D DC/DC converter design completed and 5 prototypes under manufacturing

• 3D Modules (5) to be tested by end 2004

• Radiation tests :– TID test to be performed in November 2004

– Heavy Ions test on stand alone components are planned for november 2004

– Heavy Ions test on DC/DC Converter are planned for Q1/ 2005

4W and 10W DC/DC convertersAvailability

Product Available Off-the-Shelf with EM and FM quality gradeProduct Under DevelopmentProduct to be developed with minor topology changes

DC/DC Converter

Power

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

4 W

10 W

3,3 V

5,0 V

12,0 V

5,0 V

3,3 V

12,0 V

15,0 V

Output Voltage (V)

10,0 V

Background of 3D Plus Packaging Technology

ESA/CNES Capability Approval Methodology

• The capability Approval sequence of events :– Evaluation testing phase– Process Identification Document (PID)– Approval testing phase

• Implementation with the 3D Plus stacking technology: a coordinated effort of ESA and CNES :– Evaluation phase and PID Draft completed in august 2001

• Definition of material and processes to be evaluated• Design of the test structure and PID draft• Manufacturing of test structures and Evaluation testing• Complementary Evaluation testing by NASA-GSFC

– Approval phase started in September 2001• Manufacturing of test structures according to PID (completed feb. 2004)• Testing phase (completed april 2004)• Completion of PID and associated procedures (outstanding action)

Evaluation PhaseTechnology Domain

1) Flex Design

2) Component assembly

3) Circuit Test & Screening

6) Cube Sawing

5) Cube Molding

9) Cube Test & Screening

4 ) Layers stacking

7) Cube plating (Ni+Au)

8) Circuit interconnection by laser grooving

Evaluation PhaseCESAR = Cnes ESA thRee d-plus

Flex 2

Flex 3

Flex 1

Flex 4

Flex 5 Flex 6

Flex 7

Flex 8

Flex 9

Flex 10

CESAR 3D module : 114 I/O

Evaluation PhaseCESAR = Cnes ESA thRee d-plus

– CESAR included 4 TSOP 64 Mb, 8 chip capacitors, 8 chip resistors, 2 thermal sensors, 2 mechanical constraint sensors.

– 10 internal layers + Leadframe layer

– Dimensions : 26 x 15 x 16,2 mm

– Number of I/Os : 114

– Flex assembly technologies involved: * Epoxy attach and Wire bonding

* hand soldering

– EEE Components packages involved: * Bare silicon die (PMOS4 test chip and ACM Strain gauges)

* TSOP type II (64Mb DRAM EDO)* Ceramic and Tantalum capacitors* Resistors chips

TSOP 64Mb DRAM

TSOP 64Mb DRAM

2x C 0805

TSOP 64Mb DRAM

2x CTantal2x C

1210

2x C0805

TSOP 64Mb DRAM

Film 10

Film 9

Film 8

Film 7

Film 6

Film 5

Film 4

Film 3

Film 2

Film 1

Grid 0

Evaluation PhaseTest Plan successfully accomplished

10x cubes on PCB :THERMAL CYCLES UNDER VACUUM 10-6 Torr

10x Cycles – 40°C / +70°C , 2°C/mn , 1hr par palier

8x cubes on PCB :4x with thermal cycles.

4x without thermal cycles.

Thermal Cycles500x VRT

– 55°C / +125°C10°C/mn , 15mn par palier

External visual inspection & Electrical tests at –55°C/+25°C/+125°C

External visual inspection & Electrical tests at +25°C



Temperature &Humidity

under Bias1000hrs

+85°C & 85% RH



Life Test or HighTemperature Storage

2000hrs+125°C



Power Cycling30000x ON/OFF

120s ON (+110°C)60s OFF (+40°C)

External visual inspection&

Electrical tests–55°C/+25°C/+125°C

at100, 300 & 500 cycles



at240, 500 & 1000 hrs



at500, 1000 & 2000 hrs



at15K & 30K O/O cycles

Final DPA

Approval PhaseFlow 1 : TSOP Stacking Process

1 ) Package Selection and Procurement( TSOP, …)

2 ) Component Pins de-bending

3 ) Components Stacking

4 ) Cube Molding

6 ) Cube Plating ( Ni + Au )

7 ) Circuit interconnection by laser grooving

5 ) Cube Sawing8 ) Cube Test & Screening

Approval PhaseFlow 2 : Flex Stacking Process

1 ) Flex Design

2 ) Components attachment

3 ) Circuit Test & Screening

4 ) Layers Stacking

6 ) Cube Sawing

5 ) Cube Molding

7 ) Cube Plating ( Ni + Au )

8 ) Circuit interconnection by

laser grooving

9 ) Cube Test & Screening

For Full NASA Report on 3D Plus Packaging Evaluation see:

http://nepp.nasa.gov/DocUploads/64CB4357-A232-4136-A4EAE5AA219AD1A7/FinalReport_Eval_of_3Dplus_CESAR_Cube_121201.pdf

Documents

4W DC/DC converter Specifications TECHNICAL FEATURES : –Power : 4 W –Input Voltage : 22V to 37V –Output Voltage : One Adjustable Output above 3 adjustable