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8/18/2019 7. Field Effect Transistors
1/2
Page 14
1. The JFET is(a) a unipolar device(b) a voltage-controlled device(c) a current-controlled device(d) answers (a) and (c)(e) answers (a) and (b)
e
2. The channel o a JFET is between the(a) gate and drain(b) drain and source(c) gate and source(d) input and output
b!. " JFET alwa#s operates with
(a) the gate-to-source pn $unction reverse-biased(b) the gate-to-source pn $unction orward-biased(c) the drain connected to ground(d) the gate connected to the source
a4. For %&' %* the drain current beco+es constant when %,'
eceeds(a) cuto(b) %,, (e) %P (d) %
c/. The constant-current area o a FET lies between
(a) cuto and saturation(b) cuto and pinch-o
(c) and l,'' (d) pinch-o and brea0down
d
. l,'' is(a) the drain current with the source shorted(b) the drain current at cuto(c) the +ai+u+ possible drain current(d) the +idpoint drain current
c. ,rain current in the constant-current area increases when
(a) the gate-to-source bias voltage decreases(b) the gate-to-source bias voltage increases(c) the drain-to-source voltage increases(d) the drain-to-source voltage decreases
a
3. n a certain FET circuit. %&' %* %,, 1/%. l,'' 1/ +"*and 5, 4 6. 5, is decreased to !! 6* loss is
(a) 17./ +"(b) 1./ +"(c) 1/ +"(d) 1 +"
c7. "t cuto* the JFET channel is
(a) at its widest point(b) co+pletel# closed b# the depletion region
(c) etre+el# narrow(d) reverse-biased
b1. " certain JFET data sheet gives %&'(o) -4 %. The pinch-o
voltage %P*(a) cannot be deter+ined(b) is -4 %(c) depends on %&' (d) is 84 %
d
8/18/2019 7. Field Effect Transistors
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Page 14
11. The JFET in 9uestion 1(a) is an n channel(b) is a p channel(c) can be either
a12. For a certain JFET* &'' 1 n" at %&' 1 %. The input
resistance is
(a) 1 :6(b) 1 :6(c) 1 :6(d) 1 +6
c1!. For a certain p-channel JFET. %&'(o) 3 %. The value o %&'
or an approi+ate +idpoint bias is(a) 4 %(b) %(c) 1.2/ %(d) 2.!4 %
d14. " :;'FET diers ro+ a JFET +ainl# because
(a) o the power rating(b) the :;'FET has two gates(c) the JFET has a pn $unction(d) :;'FETs do not have a ph#sical channel
c1/. " certain ,-:;'FET is biased at %&' %. ts data sheet
speci