86t02gh Mosfet

Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET

Simple Drive Requirement BVDSS 25V Low On-resistance RDS(ON) 6m Fast Switching Characteristic ID 75A RoHS Compliant

Description

Absolute Maximum RatingsSymbol Units

VDS VVGS VID@TC=25 AID@TC=100 AIDM APD@TC=25 W

W/TSTG TJ

Symbol Value UnitsRthj-c Maximum Thermal Resistance, Junction-case 2 /WRthj-a Maximum Thermal Resistance, Junction-ambient 110 /W

Data & specifications subject to change without notice

200808159

AP86T02GH/J-HF

0.5

Parameter Rating

Halogen-Free Product

Drain-Source Voltage 25

Total Power Dissipation 75

-55 to 175

Gate-Source Voltage +20Continuous Drain Current, VGS @ 10V

3 75Continuous Drain Current, VGS @ 10V 62Pulsed Drain Current1 300

Operating Junction Temperature Range -55 to 175

Linear Derating FactorStorage Temperature Range

1

Thermal DataParameter

The TO-252 package is widely preferred for commercial-industrialsurface mount applications and suited for low voltage applicationssuch as DC/DC converters. The through-hole version (AP86T02GJ) isavailable for low-profile applications.

GD

S TO-251(J)

G D S TO-252(H)

G

D

S

Electrical Characteristics@Tj=25oC(unless otherwise specified)Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V

BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.02 - V/RDS(ON) Static Drain-Source On-Resistance

2 VGS=10V, ID=45A - - 6 m

VGS=4.5V, ID=30A - - 10 m

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 Vgfs Forward Transconductance VDS=10V, ID=30A - 42 - SIDSS Drain-Source Leakage Current VDS=25V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=175oC) VDS=20V, VGS=0V - - 250 uA

IGSS Gate-Source Leakage VGS=+20V - - +100 nA

Qg Total Gate Charge2 ID=30A - 23 37 nC

Qgs Gate-Source Charge VDS=20V - 5 nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 14 nC

td(on) Turn-on Delay Time2 VDS=10V - 11 - ns

tr Rise Time ID=30A - 105 - ns

td(off) Turn-off Delay Time RG=3.3,VGS=10V - 32 - nstf Fall Time RD=0.3 - 8 - nsCiss Input Capacitance VGS=0V - 1830 2930 pF

Coss Output Capacitance VDS=25V - 490 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 360 - pF

Rg Gate Resistance f=1.0MHz - 1.1 1.6

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V

trr Reverse Recovery Time IS=20A, VGS=0V, - 28 - nsQrr Reverse Recovery Charge dI/dt=100A/s - 15 - nC

Drain-Source Avalanche RatingsSymbol Parameter Test Conditions Min. Typ. Max. Units

EAS Drain-Source Avalanche Energy4 ID=24A, VDD=20V, L=100uH - - 29 mJ

Notes:1.Pulse width limited by Max. junction temperature.2.Pulse test3.Package limitation current is 75A .4.Single Pulse Test.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2

AP86T02GH/J-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

3

AP86T02GH/J-HF

4

8

12

16

2 4 6 8 10

V GS , Gate-to-Source Voltage (V)

R DS(

ON

) (m

)

I D =30AT c =25

0.0

0.4

0.8

1.2

25 50 75 100 125 150 175

T j ,Junction Temperature ( o C)

Nor

mal

ized

VG

S(th

) (V)

0

50

100

150

200

0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T C =25o C

V G =3.0V

10V7.0V5.0V4.5V

0

30

60

90

120

0 1 2 3 4 5


I D ,

Dra

in C

urre

nt (A

)

V G = 3 .0V

T C = 175o C

10V7.0V5.0V4.5V

0.6

1.0

1.4

1.8

25 50 75 100 125 150 175

T j , Junction Temperature (o C)

Nor

mal

ized

R DS(

ON

)

I D =45AV G =10V

0

10

20

30

0 0.2 0.4 0.6 0.8 1 1.2

V SD , Source-to-Drain Voltage (V)

Is (A

)

T j =25o CT j =175

o C

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Drain-Source On Resistance

4

AP86T02GH/J-HF

100

1000

10000

1 5 9 13 17 21 25 29

V DS ,Drain-to-Source Voltage (V)

C (p

F)

f=1.0MHz

C iss

C ossC rss

0

4

8

12

16

0 10 20 30 40 50

Q G , Total Gate Charge (nC)

V GS ,

Gat

e to

Sou

rce

Volta

ge (V

)

V DS =10VV DS =15VV DS =20V

I D =30A

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Nor

mal

ized

Ther

mal

Res

pons

e (R

thjc)

PDM

Duty factor = t/TPeak Tj = PDM x Rthjc + TC

t

T0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

1

10

100

1000

0.1 1 10 100


I D (A

)

T c =25o C

Single Pulse

1ms

10ms100ms

1sDC

0

40

80

120

0 2 4 6

V GS , Gate-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T j =175o CT j =25

o C

V DS =5V

0

10

20

30

40

0 20 40 60 80 100

I D (A)

R DS(

ON

) (m

)

10V4.5V

4.2V

3.8V3.5V3.2V3V2.8V

Package Outline : TO-252

MillimetersMIN NOM MAX

A2 1.80 2.30 2.80A3 0.40 0.50 0.60B1 0.40 0.70 1.00D 6.00 6.50 7.00

D1 4.80 5.35 5.90E3 3.50 4.00 4.50

E3 F 2.20 2.63 3.05F1 0.50 0.85 1.20E1 5.10 5.70 6.30E2 0.50 1.10 1.80e -- 2.30 --C 0.35 0.50 0.65

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-252

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

ee

D

D1

E2

E1

FB1 F1

A2

A3 C

R : 0.127~0.381

(0.1mm

PartPackage Code

86T02GH

YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product

LOGO

meet Rohs requirementfor low voltage MOSFET only

5

josalul

Package Outline : TO-251

MIN NOM MAX

A 2.20 2.30 2.40A1 0.90 1.20 1.50B1 0.40 0.60 0.80B2 0.60 0.85 1.05

c 0.40 0.50 0.60c1 0.40 0.50 0.60D 6.40 6.60 6.80D1 4.80 5.20 5.50E 6.70 7.00 7.30E1 5.40 5.60 5.80E2 1.30 1.50 1.70

e ---- 2.30 ----F 7.00 8.30 9.60

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-251

SYMBOLS

ADVANCED POWER ELECTRONICS CORP.

Millimeters

86T02GJ

YWWSSS

Part Number

Package Code

A

c1

A1

c

e

D

E2

E1 E

B1

B2

F

D1

e

Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product

LOGO

meet Rohs requirementfor low voltage MOSFET only

6

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86t02gh Mosfet