A 200 Frames per Second, 1-Megapixel, Frame Store CCD camera for X-ray imaging

Dionisio Doering(a), Nord Andresen(a), Devis Contarato(a), Peter Denes(a), John Joseph(a), Patrick McVittie(a), Jean-Pierre Walder(a), John Weizeorick(b)

(a)Lawrence Berkeley National Laboratory, Berkeley, CA (USA)

(b) Argonne National Laboratory, Argonne, IL (USA)

International Workshop on Semiconductor Pixel Detectors for Particles and Imaging September 3 – 7, 2012 in Inawashiro, Japan

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Outline

• Sensor• Buffer chip• Readout IC• X-ray camera• Readout system• Initial Results• Conclusions

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Thick fully depleted detector

S. HollandSNAP- Super Nova Acceleration Probe

Produced at DALSA/TeledyneMSL@LBNL processed

At VSUB = 115 V,σD = 3.7 ± 0.2 μm

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Fully depleted• charge cloud moves by drift• full charge collection• good point spread function

Fully depleted vs. partially depleted

depleted

depleted

undepleted

Partially depleted• charge cloud diffuses in 4• partial charge collection• poor point spread function

+ +

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X-ray sensor efficiency

100 1000 100000

0.1

0.2

0.3

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0.6

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0.9

1

E. window 100nm, 50um thick

X-ray energy (eV)

Efficie

ncy

(%)

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X-ray sensor efficiency

100 1000 100000

0.1

0.2

0.3

0.4

0.5

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1

E. window 100nm, 50um thickE. window 100nm, 100um thick

X-ray energy (eV)

Efficie

ncy

(%)

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X-ray sensor efficiency

100 1000 100000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

E. window 100nm, 50um thickE. window 100nm, 100um thickE. window 100nm, 200um thick

X-ray energy (eV)

Efficie

ncy

(%)

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X-ray sensor efficiency

100 1000 100000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

E. window 100nm, 50um thickE. window 100nm, 100um thickE. window 100nm, 200um thickE. window 20nm, 200um thick

X-ray energy (eV)

Efficie

ncy

(%)

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X-ray sensor efficiency

100 1000 100000

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

E. window 100nm, 50um thickE. window 100nm, 100um thickE. window 100nm, 200um thickE. window 20nm, 200um thickE. window 10nm, 200um thick

X-ray energy (eV)

Efficie

ncy

(%)

Low temperature processHigh temperature processMBE (in R&D)

Constant areataper

Mini-shift reg.

Output stage

~300 µm pitchbond pads

(wire-bondable)

Metal strapping

Parameter ValueThick 50-300 mm

Direct detection Yes

Fully depleted Yes

Pixel size 30 mm

Pixel matrix 1920 x 960

Frame store Yes

# of outputs 192

Pixel rate 184Mpix/s

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1kFSCCD

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Speed issues, for the output stage

• Parasitic capacitance leads to a long CCD output rise time

• Buffer chip – 0.35 mm high voltage CMOS

– Provide bias for the detector– Recover gain

Input: 2.1ns

Output: 3.7ns

CCD outputrise time : 400 ns

Vreset

Vout

Vsclk

Vsw

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FCRIC (1/2)

• 16 channels • Gain 8, 2, 1• 12 + 1 bit ADC• Covers 15-bit dynamic range• Quantization error always < photostatistics• CDS – correlated double sampling

±

Preamp Multi-gainintegrator

CDS Pipelined ADC

Voltage integrator

Output =

Optimal noise filtering

Switched cap preserves charge

VRdt VSdt

ADU

Input signal (V)

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FCRIC (2/2)

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Camera head

• Top board• Bias board• Digitizer board• Frame store mask• Temperature sensors• Vacuum chamber

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Readout system (1/2)

RAID Array Node

UserClient

CameraHead

ShelfManager

10 GbE Network1 GbE NetworkCustom InterfaceCustom

TimingModule

Data CaptureModule Fabric

SwitchHub

Sys. Config.

GUI Interface

Processor Node

Camera InterfaceNode

DigitalPSU

ATCA Chassis Network Connections

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Readout system (2/2)

• Image processing• Dark image subtraction, Gain correction• Zero suppression, Digital integration, Binning

• Camera head communication– Copper cables– Being replaced by fiber optics module

Fiber optics module

Camera Interface Node (CIN)

ATCA crate

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Calibration & X-ray imaging R&D

• ALS at beam line 5.3.1 • ALS at beam line 8.3.2

new systems are in production and will be delivered to ALS (8x), APS (2x) and (1x) EXFELA few more will be produced to other places, contracts under negotiation.

Power supply

ATCAsystem

1kFSCCD

chiller

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1kFSCCD X-ray performance

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Future developments for high(er) speed detectors

Diffraction CCD

120 mm laser drilled hole

5 x 50 mm pixel CCD(spectrographicapplications)

Column parallel CCD

65 nm CMOS Pre-process + ADCFor more info, please see Peter Denes talk 9/4 4:20pm Maurice Garcia-Sciveres talk 9/5 8:30am

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Conclusions