ABB Semiconductors’ IGCTs are nowused in a multitude of applications dueto their versatility, efficiency and cost-effectiveness. With their low on-statevoltages, they achieve the lowestrunning costs by reaching inverter effi-ciencies of 99.6% and more.

The IGCT is a gate-controlled turn-off switch which turns offlike a transistor but conducts like a thyristor with the lowestconduction losses. Fig. 1 shows turn-off at 3000 A.GCTs are the only high power semiconductors to be suppliedalready integrated into their gate-units. The user thus onlyneeds to connect the device to a 28 – 40 V power supply andan optical fibre for on/off control. Because of the topology inwhich it is used, the IGCT produces negligible turn-on losses.This, together with its low conduction losses, enablesoperation at higher frequencies than formerly obtained byhigh power semiconductors.

Fig. 2 illustrates the basic IGCT VSI topology. It can be seenthat diode commutation is controlled by inductance L. Thefree-wheel circuit of Fig. 2 minimizes turn-on energy in thesemiconductor by storing it in L. The inductance is the mostlogical fault limitation technique in the event of catastrophicfailure since, as opposed to resistors and fuses, it has thebenefit of “already being there”. The press-pack constructionof the IGCT, combined with the inductance, makes the systemresistant to explosion, even when the device’s surge rating isexceeded.

Turn-off dv/dt is also not gate-controlled, but programmed atthe device manufacturing stage by anode design and lifetimeengineering. The absence of dv/dt and di/dt control functio-nality simplifies gate-unit design and allows a high degree ofstandardisation. Some sixty publications exist on the use ofIGCTs in many applications. These can be downloaded fromthe ABB Website www.abb.com/semiconductors. Table 2summarises the essential documents relating to the applicationof IGCTs.

As can be seen in Table 1, IGCTs are available as reverseconducting (RC) and asymmetric devices. The low losses allowhard-switched operating frequencies of up to 600 Hz for 6.5kV devices and 1 kHz for 4.5 kV devices in the steady stateand over 5 kHz in burst mode.

Power and productivityfor a better world™

Fig. 1 IGCT turn-off exhibits same waveform and losses (Eoff) as Transistor

Anode voltage Vd

Gate voltage Vg

Anode current I a

15 20 25 30 35 Time (μs)Vg (V)

4

3

2

1

0

-10

-20

Vd (kV) I a (kA)

Vdm

I tgq

4

3

2

1

0

starts to blockFig. 2 Basic IGCT inverter circuit

VDC

L SDclamp

Cclamp

RL

S 1 S 3 S 5

S 2 S 4 S 6

IGCT – Integrated Gate-CommutatedThyristors

ApplicationsThe Integrated Gate-Commutated Thyristor is the powerswitching device of choice for demanding High-Power appli-cations such as:- MVD (Medium Voltage Drives)- Marine Drives- Co-generation- Wind Power Converters- STATCOMs- DVRs (Dynamic Voltage Restorers)- BESS (Battery Energy Storage Systems)- SSB (Solid State Breakers)- DC Traction Line Boosters- Traction Power Compensators- Interties

OutlookThe expansion of power electronics into the new fields ofEnergy Management, Renewable Energy Sources and Co-generation is driving semiconductor requirements towardshigher frequency, higher voltage and higher efficiency whileincreasing demands for reliability and lower costs.

The IGCT is capable of still higher currents, voltages andfrequencies without series or parallel connection and the firstof such products are introduced as “High Power Technology”devices, see Table 1. This latest family of IGCTs exhibit up to30% higher turn-off capability than standard devices.

Currently in development are technologies to increase therated temperature for a number of devices and to increasethe current rating with larger silicon diameters.

Within 10 years of its introduction, the IGCT has establisheditself as the power device of choice for high power at highvoltage by meeting the demands of a growing power electronicmarket. Single inverters of over 15 MVA can now be realisedwithout series or parallel connection achieving the highestinverter power densities in the industry.

Applying IGCT Gate Units

Applying IGCTs

Recommendations regarding mechanical clamping of Press-pack High Power Semiconductors

Failure Rates of IGCTs due to Cosmic Rays

Field measurements on High Power Press-pack Semiconductors

Voltage ratings of high power semiconductors

Specification of environmental class for pressure contact IGCTs - OPERATION

Specification of environmental class for pressure contact IGCTs - STORAGE

Specification of environmental class for pressure contact IGCTs - TRANSPORTATION

5SYA2031

5SYA2032

5SYA2036

5SYA2046

5SYA2048

5SYA2051

5SZK9107

5SZK9109

5SZK9110

Legend: 1 standard 2 low on-state 3 low turn-off losses 4 projected for 2014

* Contact factory for symmetrical devices

1100 A

/

/

/

900 A

/

2200 A

/

/

/

1800 A

/

1 4000 A2 4000 A3 3600 A

5000 A (HPT)

3600 A (HPT)

3800 A (HPT)

4.5 kV

4.5 kV

4.5 kV

4.5 kV

5.5 kV

6.5 kV

4 8000 A

Document number

Type Reverse conducting

51 mm

630 A

/

/

/

520 A

/

Product Range

Asymmetric

91 mmSi ø 68 mm 91 mmVDRM

*

140 mm

Power and productivityfor a better world™

Table 2 Principal applications documents

Table 1 Product Range

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ABB Switzerland LtdSemiconductorsFabrikstrasse 3CH-5600 LenzburgSwitzerlandTel: +41 58 586 14 19Fax: +41 58 586 13 06abbsem@ch.abb.comwww.abb.com/semiconductorsm.abb.com

ABB s.r.o.SemiconductorsNovodvorska 1768/138a142 21 Prague 4Czech RepublicTel: +420 261 306 250Fax: +420 261 306 308semiconductors@cz.abb.comwww.abb.com/semiconductorsm.abb.com

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