ACEPACK™ 1

Features• ACEPACK™ 1 power module

– DBC Cu Al2O3 Cu• Sixpack topology

– 650 V, 50 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Industrial• Motor drives

DescriptionThis power module is a sixpack topology in an ACEPACK™ 1 package with NTC,integrating the advanced trench gate field-stop technology from STMicroelectronics.This new IGBT technology represents the best compromise between conduction andswitching loss, to maximize the efficiency of any converter system up to 20 kHz.

Product status

A1P50S65M2

Product summary

Order code A1P50S65M2

Marking A1P50S65M2

Package ACEPACK™ 1

Leads type Solder contact pins

ACEPACK™ 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC

A1P50S65M2

Datasheet

DS12332 - Rev 2 - February 2018For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

1.1 IGBTLimiting values at Tj = 25 °C, unless otherwise specified.

Table 1. Absolute maximum ratings of the IGBT

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 650 V

IC Continuous collector current (Tc = 100 °C) 50 A

ICP(1) Pulsed collector current (tp = 1 ms) 100 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBT

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitterbreakdown voltage IC = 1 mA, VGE = 0 V 650 V

VCE(sat)(terminal)

Collector-emittersaturation voltage

VGE = 15 V, IC= 50 A 1.95 2.3V

VGE = 15 V, IC = 50 A, TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µA

IGESGate-emitter leakagecurrent VCE = 0 V, VGE = ± 20 V ± 500 nA

Cies Input capacitanceVCE = 25 V, f = 1 MHz,

VGE = 0 V

4150 pF

Coes Output capacitance 170 pF

CresReverse transfercapacitance 80 pF

Qg Total gate chargeVCC = 520 V, IC = 50 A,

VGE = ±15 V150 nC

td(on) Turn-on delay time VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2400 A/µs

143 ns

tr Current rise time 16.5 ns

Eon(1) Turn-on switching energy 0.140 mJ

td(off) Turn-off delay time VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 7600 V/µs

112 ns

tf Current fall time 149 ns

Eoff(2) Turn-off switching energy 1.45 mJ

A1P50S65M2 Electrical ratings

DS12332 - Rev 2 page 2/12

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2062 A/µs, TJ = 150 °C

148 ns

tr Current rise time 19.2 ns

Eon(1) Turn-on switching energy 0.311 mJ

td(off) Turn-off delay time VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 5800 V/µs, TJ = 150 °C

110 ns

tf Current fall time 221 ns

Eoff(2) Turn-off switching energy 1.98 mJ

tSCShort-circuit withstandtime

VCC ≤ 360 V, VGE ≤ 15 V,

TJstart ≤ 150 °C6 µs

RTHj-cThermal resistancejunction-to-case Each IGBT 0.65 0.72 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.2 DiodeLimiting values at Tj = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 650 V

IF Continuous forward current at (TC = 100 °C) 50 A

IFP(1) Pulsed forward current (tp = 1 ms) 100 A

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature.

Table 4. Electrical characteristics of the diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VF (terminal) Forward voltageIF = 50 A - 1.85 2.65

VIF = 50 A, TJ = 150 ˚C - 1.65

trr Reverse recovery time

IF = 50 A, VR = 300 V,

VGE = ±15 V, di/dt = 2400 A/μs

- 142 ns

Qrr Reverse recovery charge - 1.87 µC

Irrm Reverse recovery current - 40 A

Erec Reverse recovery energy - 0.41 mJ

trr Reverse recovery timeIF = 50 A, VR = 300 V,

VGE = ±15 V, di/dt = 2062 A/μs,

TJ = 150 °C

- 260 ns

Qrr Reverse recovery charge - 5.2 µC

Irrm Reverse recovery current - 58 A

Erec Reverse recovery energy - 1.32 mJ

A1P50S65M2Diode

DS12332 - Rev 2 page 3/12

Symbol Parameter Test conditions Min. Typ. Max. Unit

RTHj-cThermal resistancejunction-to-case Each diode - 1.0 1.1 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W

1.3 NTC

Table 5. NTC temperature sensor, considered as stand-alone

Symbol Parameter Test conditions Min. Typ. Max. Unit

R25 Resistance T = 25°C 5 kΩ

R100 Resistance T = 100°C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

1.4 Package

Table 6. ACEPACK™ 1 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 V

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 28.7 nH

Rs Module single lead resistance, terminal-to-chip 3.9 mΩ

A1P50S65M2NTC

DS12332 - Rev 2 page 4/12

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics(VGE = 15 V, terminal)

IGBT111020170929TCH

80

60

40

20

00 1 2 3 4

Ic (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C, terminal)

IGBT101020171341OC25

90

80

70

60

50

40

30

20

1000 1 2 3 4

IC (A)

VCE (V)

19 V

17 V

15 V

13 V

11 V

VGE = 9 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT101020171339OC25

80

60

40

20

05 6 7 8 9 10 11 12

IC (A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. Switching energy vs gate resistance

IGBT101020171348SLG

4.0

3.0

2.0

1.0

00 20 40 60 80

E (mJ)

RG (Ω)

VCC = 300 V, IC = 50 A, VGE = ±15 V

EON (TJ = 150 °C)

EOFF (TJ = 150 °C)

EOFF (TJ = 25 °C)

EON (TJ = 25 °C)

A1P50S65M2Electrical characteristics (curves)

DS12332 - Rev 2 page 5/12

Figure 7. Switching energy vs collector current

IGBT101020171351SLC

3

2

1

010 30 50 70 90

E (mJ)

IC (A)

VCC = 300 V, RG = 6.8 Ω, VGE = ±15 V

EOFF (TJ = 150 °C)

EOFF (TJ = 25 °C)

EON (TJ = 150°C)

EON (TJ = 25 °C)

Figure 8. IGBT reverse biased safe operating area(RBSOA)

IGBT101020171353OC25

50

40

30

20

10

00 100 200 300 400 500 600

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω

Figure 9. Diode forward characteristics

IGBT101020171356DVF

80

60

40

20

00 0.4 0.8 1.2 1.6 2.0 VF (V)

IF(A)

TJ = 150 °C

TJ = 25 °C

Figure 10. Diode reverse recovery energy vs diodecurrent slope

IGBT101020171356OC25

1.2

0.9

0.6

0.3

0200 750 1300 1850

Erec (mJ)

di/dt (A/µs)

VCE = 300 V, VGE = ±15 V, IF = 50 A

TJ = 150 °C

TJ = 25 °C

Figure 11. Diode reverse recovery energy vs forwardcurrent

IGBT101020171402RRE

1.6

1.2

0.8

0.4

010 30 50 70 90

Erec (mJ)

IF (A)

VCE = 300 V, VGE = ±15 V, RG = 6.8 Ω

TJ = 150 °C

TJ = 25 °C

Figure 12. Diode reverse recovery energy vs gateresistance

IGBT101020171406RRE

1.2

0.9

0.6

0.3

00 20 40 60 80

Erec (mJ)

RG (Ω)

VCE = 300 V, VGE = ±15 V, IF = 50 A

TJ = 25 °C

TJ = 150 °C

A1P50S65M2Electrical characteristics (curves)

DS12332 - Rev 2 page 6/12

Figure 13. Inverter diode thermal impedance

IGBT111020170844MT

100

10-1

10-3 10-2 10-1 100

Zth(°C/W)

t (s)

Zth(typ.)JH

Zth(max.)JC

JC

i 1 2 3 4ri (˚C/W) 0.1746 0.5169 0.2851 0.1197

τi(s) 0.0008 0.0074 0.0368 0.2601

JH

iri (˚C/W) 0.2091 0.5735 0.7511 0.3615

τi(s) 0.0010 0.0116 0.0729 0.3310

RC - Foster thermal network

RC - Foster thermal network1 2 3 4

Figure 14. IGBT thermal impedance

IGBT111020170846MT

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth (°C/W)

t (s)

JC

i 1 2 3 4ri (˚C/W) 0.0718 0.2858 0.2471 0.1130τi(s) 0.0002 0.0072 0.0392 0.2850

JH

iri (˚C/W) 0.0808 0.3144 0.6701 0.3713τi(s) 0.0003 0.0113 0.0752 0.3492

Zth(typ.)JH

Zth(max.)JC

RC - Foster thermal network

RC - Foster thermal network1 2 3 4

A1P50S65M2Electrical characteristics (curves)

DS12332 - Rev 2 page 7/12

3 Test circuits

Figure 15. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3 µF

1000 µF

L=100 µH

VCC

E

D.U.T

B

AM015 04v1

Figure 16. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 17. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 18. Diode reverse recovery waveform

25

A1P50S65M2Test circuits

DS12332 - Rev 2 page 8/12

4 Topology and pin description

Figure 19. Electrical topology and pin description

P

G1 G3 G5

G2 G4 G6

UV

W

EWE’W

EVE’V

EUE’U

T1

T2

Figure 20. Package top view with sixpack pinout

A1P50S65M2Topology and pin description

DS12332 - Rev 2 page 9/12

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

5.1 ACEPACK™ 1 sixpack solder pins package information

Figure 21. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)

33.8±0.3

28.1±0.2

19.4±0.2

16.4±0.2

62.8

±0.

5

53±

0.1

42.5

±0.

2

41±

0.2

48±

0.3

4.5±0.1

3.2 BSC

12±

0.35

15.5

±0.

50

36.8

REF

1.3±0.2

2.5±0.2

3.2

BSC

Detail A

Section B-B

2.3

REF 8.5

3.5 REF x45°

B

B

AA

3.20

6.40

0.00

12.80

16.00

22.40

25.60

28.80

32.00

0.00

6.40

16.0

0

19.2

0

25.6

0

G6

P

W

VW

G5

T1

T2

G3

U

U

G1

E'W EW G4 EV E'V EU E'U

G2

P

V

3.20

9.60

22.4

0

0.64±0.03

GADG240820170900MT_8569715_4

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A1P50S65M2Package information

DS12332 - Rev 2 page 10/12

Revision history

Table 7. Document revision history

Date Revision Changes

11-Oct-2017 1 Initial release.

16-Feb-2018 2

Updated features and removed maturity status indication from cover page.

Updated Figure 13. Inverter diode thermal impedance and Figure 14. IGBT thermalimpedance.

Updated Figure 21. ACEPACK™ 1 sixpack solder pins package outline(dimensions are in mm).

Minor text changes

A1P50S65M2

DS12332 - Rev 2 page 11/12

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© 2018 STMicroelectronics – All rights reserved

A1P50S65M2

DS12332 - Rev 2 page 12/12