1998 EDITION�

NEW LED DRIVER (PAGE 3)

829 Flynn Road, Camarillo, CA 93012 Ph 805 445-4500 Fx 805 445-4502Email: myrlin@telcomdevices.com Web Site: http://www.telcomdevices.com

CHEMLEDs�&�

CHEMSENSORs��

CHEMLEDs�&�

CHEMSENSORs�� �

Semiconductor Emitters�and Detectors�

for Chemical Sensing�in NIR and Mid-IR

�Semiconductor Emitters�

and Detectors�for Chemical Sensing�

in NIR and Mid-IR

Applications

SpectroscopyMedical Diagnostics

Organic SensingPollution Monitoring

Moisture SensingFrom 1000 to 4600 nm

Applications

SpectroscopyMedical Diagnostics

Organic SensingPollution Monitoring

Moisture SensingFrom 1000 to 4600 nm

Part Number Parameter, 22ϒCPeak Wavelength (If = 100 mA)Total Optical Power (If = 100 mA)Spectral Bandwidth (If = 100 mA)Maximum ContinuousOperating Forward CurrentMaximum Reverse Voltage, VRForward Current (Vf = 1 VDC), IfReverse Current (Vr = 1 VDC), Ir

UnitsnmmWnm

mA

VmAuA

1.00 LED10001.260

100

1124.4

1.07 LED10700.980

100

13

2.6

1.22 LED12201.870

100

118na

1.25 LED12501.670

100

1204

1.38 LED13801.780

100

118na

1.43 LED1430

290

100

1184

1.50 LED15001.4120

100

1344

1.56 LED1560

1120

100

1476

1.67 LED16700.6120

100

1na3

13PD55 - TO 13PD75 - TO

13PD75LDC - TO 13PD100 - TO 13PD150 - TO 35PD300 - TO

35PD300LDC - TO

557575100150300300

0.50.750.751.151.544

0.900.900.900.900.900.900.90

0.070.10.1< 1< 2< 3< 3

30303030202020

250250300500

100050005000

55555

2525

Photodiode Type-Package Designation

Photodiode Type-Package Designation

Photodiode Type-Package Designation

PhotosensitiveDiameter, m

Capacitance(VR = 5V), pF

Responsivity(1300 nm), A/W

Rise/FallTime, ns

ReverseVoltage, V

ReverseCurrent, A

ForwardCurrent, mA

Maximum Ratings

0.11

< 0.11123

< 0.51

Dark Current(VR = 5V), nA

Part Number Typical Values

Typical Values

35PD5M - TO

35PD10M - TO

5

10

0.1

2

0.9

0.9

Class A ≥ 0.1Class B ≥ 0.01

0.006

11

0.5

3030

120

200200800

PhotosensitiveDiameter, mm

Responsivity(1300 nm), A/W

DynamicImpedance, M�

ReverseVoltage, V

ReverseCurrent, mA

ForwardCurrent, mA

Maximum RatingsDark Current

(VR = 0.3V), A

Part NumberUltra-Large Diameter InGaAs Photodiodes

High Performance InGaAs Photodiodes

35PD500 - TO

35PD1M - TO

35PD2M - TO

35PD3M - TO

0.5

1.0

2.0

3.0

<25 @ –5V

50 @ –0.3V

55 @ –3.0V

50 @ –0.3V

20

150

400

900

0.9

0.9

0.9

0.9

50Class A ≥ 50Class B ≥ 1

Class C ≥ 0.15≥ 10

Class A ≥ 1Class B ≥ 0.1

152222

2

520202025

25

50100100100100

100

PhotosensitiveDiameter, mm

Capacitance(zero bias), pF

Responsivity(1300 nm), A/W

DynamicImpedance, M�

ReverseVoltage, V

ReverseCurrent, mA

ForwardCurrent, mA

Maximum RatingsDark

Current, nA

Part NumberLarge Diameter InGas Photodiodes

CHEMSENSE Detectors

CHEMLED Emitters

13 (35) PD Series

1.20

1.00

0.80

0.60

0.40

0.20

0.00

Abso

lute

Res

pons

e (A

/W)

800 1000 1200 1400 1600Wavelength (nm)

1800

NIR Components

Telcom Devices Corporation offers semiconductor light emitters and detectors operating in the NIR and Mid-IR for chemical sensing applications, including pollution monitoring, medical diagnostics, spectroscopy, and sensing of moisture and organics. NIR components are fabricated by using established manufacturing technology for InGaAs devices. More advanced materials are used to produce the Mid-IR devices. Planar, dielectric-passivated design, micro-machining of lenses directly into LED chips, thermal and e-beam metallization, IR photolithography, and scribe & break die separation are among the advanced fabrication technologies employed. A wide range of packaging options is also offered in addition to custom foundry and packaging services. Manufacturing is carried out at the headquarters in Camarillo, CA in Class 100 cleanrooms.

Telcom Devices Corporation

Infrared Photolithography

Company Profile

Packaging

Device Fabrication

Epitaxial Materials

Test

Scribe & Break

1

The EV-1 CHEMLED evaluation board is a high performance, precision, current signal generator and detection unit COMPATIBLE WITH MATLAB.*

The integration of the board with a 1 Meg x 24 bit SRAM IBM PC card permits direct digitalization of the photoelectric signal to the personal computer. Software drivers for DOS and demo M-files with GUI for MATLAB 4.x are included. Full control of the board and data processing is from directly within MATLAB environment. The system’s RS-485 serial data bus guarantees fast data transfer to the IBM-PC.

2.2 PD SeriesCHEMSENSE Detectors

CHEMLED Emitters

Peak Wavelength (If = 50 mA)Total Optical Power (If = 50 mA)Pulsed Power (100 ns, 10 KHz)Spectral Bandwidth (If = 50 mA)Maximum Continuous Operating Forward CurrentMaximum Forward CurrentMaximum Pulsed Current(100 ns, 10 KHz)Switching TimeQuantum YieldTemperature Dependenceof Quantum YieldTemperature Dependenceof Peak Wavelength

Part NumberUnitsnmmWmWnm

mA

mA

mA

ns%

%/K

nm/K

1.8 LED18000.6

5@2A150

30

50

2000

201

6

1

1.9 LED19400.3

5@2A150

30

50

2000

151.5

5.5

1

2.2 LED22000.3

3@2A200

30

50

2000

101

4

1.5

2.9 LED29000.04

2@5A400

50

100

5000

500.3

7

3

3.3 LED33000.04

2@5A450

50

100

5000

500.3

5

3

4.3 LED43000.02

1@5A500

50

100

5000

700.15

4

3

4.6 LED46000.01

0.5@5A600

50

100

5000

800.1

4

3

Parameter, 22ϒC

Active Area DiameterPeak WavelengthDetectivityRise & Fall Time (50 , 0.0V)Long-Wavelength Detector Cut-OffShort-Wavelength Detector Cut-OffDark CurrentResponsivityShunt ResistanceCapacitance, 0.0VOperating TemperaturePackage

0.252.0-2.2

(4-6)E101-5

2.4 ± 0.020.9-1.0

3-15(-1V)0.9-1.120-5010-20+25

TO-18

mmm

cm-Hz1/2/WnsmmA

A/WkpFϒC

0.52.0-2.2

(3-5)E1010-20

2.4 ± 0.020.9-1.0

10-30(-1V)0.9-1.110-2050-100

+25TO-18

1.02.0-2.2

(3-5)E1040-80

2.4 ± 0.020.9-1.0

10-20(-0.5V)0.9-1.12-10

400-800+25TO-5

2.02.0-2.2

(1-5)E10300-500

2.4 ± 0.020.9-1.0

50-100(-0.2V)0.9-1.10.2-1.0

1500-3000+25TO-5

Part Number2.2PD250 2.2PD500 2.2PD1M 2.2PD2MUnitsParameter, 25ϒC

The 2.2 PD series of detectors is based on GaInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 m, and peak response of 1 A/W occurs at about 2.2 m. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared to extended wavelength InGaAs is superior due to the high resistance and low price. Standard packaging includes TO-18 and TO-5 headers.

3.4 PD SeriesThe 3.4 PD series of detectors is based on InAsSbP/InAs heterostructure technology. Spectral sensitivity lies between 1.0 and 3.8 mm, and peak response occurs at about 3.4 m. Operation can be photovoltaic or photoconductive, and pulsed or CW. Excellent price/performance is offered. Standard packaging options include a parabolic reflector with optional calcium fluoride or sapphire window.

Active Area DiameterPeak WavelengthDetectivityRise & Fall Time (50 , 0.0V)Long-Wavelength Detector Cut-OffShort-Wavelength Detector Cut-OffDark Current, –5.0VResponsivityShunt ResistanceCapacitance, 0.0VOperating TemperaturePackage

0.22.9-3.4(1-3)E9150-200

3.8 ± 0.050.8-1.0300-5001.0-1.3>130

1000-2000+25

TO-18

0.32.9-3.4(1-3)E9180-220

3.8 ± 0.050.8-1.0400-6001.0-1.3>100

1500-2300+25

TO-18

mmm

cm-Hz1/2/WnsmmA

A/WkpFϒC

Part Number3.4PD-200 3.4PD-300UnitsParameter, 25ϒC

100

80Re

spon

se (a

u)

60

40

20

0

100

80

Resp

onse

(au)

60

40

20

0

0.8 1.2 1.6Wavelength ( m)

2.0 2.4 2.8

1.0 2.0Wavelength ( m)

3.0 4.0

Mid IR Components

Board is fitted with following function blocks • Photovoltaicpreamplifierwithdifferentialinputs.

• Antialiasingfilter.

• 18-bitanalogtodigitalconverter.

• Digital filter using 4x oversampling, boosting the data to20-bit resolution.

• Masterclockwithsynchronizationsignals for1Megx24bitstatic memory card allowing phase locking or averaging.

• Twochannelprecision16-bitresolutioncurrentdrivers-max.100 mA.

• Onboardselectionof4x2preprogrammedwaveformsandLED driving currents in acoustic bandwidth 0-20 kHz. Waveforms are designed for boxcar spectral window of 2n FFT.

Key Specifications • 20 kHz maximum detection bandwidth after 4x oversampling.

• 100dbdynamicrange.

• Excellentlongtermstability20ppm10hrincontrolledenvironment.

Optio

File Edit Windows

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 01 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 01 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0

1 1 1 1 0 01 1 1 1 1 0

AQUIRE

RESUME

PRINT

LOAD

SAVE

CLOSE

SAVE

CLOSE

File

MATLAB Command Window

Edit WindowsEV-1 GUI FORM M-20 ver. 1.0e

HelpFileHelp

cmex.bat hahadet_tem.dat

Edit

-1

-2

-3

-4

MA

GN

ITU

DE

SIG

NA

L

-5

-6

-7

-8

-0.1

-0.05

-0

-0.05

-0.1

1680

0.404 0.4045 0.405 0.4055 0.406 0.4065 0.407

1700 1720FREQUENCY, [Hz]

TIME, [s]

1740 1760 1780

>>

*MATLAB is a trademark of DHE Mathworks Inc.

CHEMLED Evaluation Board

Multi-wavelength array of Chemled emitters in standard or custom configurations.

Rlea

tive

Inte

nsity

1.5 2.0Wavelength ( m)

2.5

Spectrally Selective Broadband Source

MATLAB Screen

EV-2 is a dual channel current signal generator with digitally synthesized waveforms for driving CHEMLED emitters. Four waveforms are available in a lookup table stored in ROM and selected by an on-board dipswitch. The frequency of the waveform can be controlled by either an internal 24 MHz TTL master clock or through an external TTL clock accessed through an SMA port. An Analog Data Valid (ADV) signal for synchronization of data acquisition is also provided through an SMA port. A high quality16-bitD/Aconverterprovides90dBofdynamicrange.EV-2ispoweredbyanon-board9Vbattery.

EV-2 is ideally suited to chemical sensing applications as one channel can be used for monitoring and the second for a reference.

New for 1998! CHEMLED Driver

2 3

CATHODE

Ø 5.1

ANODE

Ø 9.0 ± 0.2

8.1 ± 0.1

Ø 5.9 ± 0.1WINDOW

SENSITIVITYSURFACE

Ø 0.45LEAD

1.8 ± 0.2

13 MIN

Sales RepresentativesU.S.A.Swan AssociatesNew England, New York, New JerseyP.O.Box9424,NewHaven,CT06534Phone(203)387-3917FAX(203)387-3917

ACMNorth and South Carolina, Georgia, Tennessee,Alabama, Mississippi4505-KPeachtreeIndustrialBoulevard.,Norcross,GA30092Phone(404)448-7025FAX(404)368-1163

All Tech SalesTexas, Oklahoma, Louisiana, Arkansas3607ChimneyRockDrive,Carrollton,TX75007Phone(972)394-9977FAX(972)394-9978

JB AssociatesWashington, Oregon, Northern CaliforniaP.O.Box1090,Eastsound,WA98245Phone(360)376-4766FAX(360)376-4766

S&G Inc.Virginia, Maryland, North Carolina8380ShadyGroveCirclesManassas, VA 20110Phone,FAX(703)368-7852

AustraliaKingfisher International: Bruce RobertsonUnit4/19ViewtechPlace,Rowville,Victoria3178,AustraliaPhone(61)37643933FAX(61)37643944

EnglandAccess Pacific Developments: Jim Butler, Peter Smith5 Warwick Close, Raunds, WellingboroughNorthhampshire,NN96JHUnitedKingdomPhone(44)1933461742FAX(44)1933461743

FinlandFinnoptics OyP.O.Box50,Makituvantie9,FIN-01511Vantaa,FinlandPhone(358)0-8706-5351FAX(358)0-8706-5355

FranceEquipements Scientifiques S.A.: Chris Merry127RuedeBuzenvalB.P.26Garches92380,FrancePhone(33)147959900FAX(33)147011622

Germany, SwitzerlandOrtel Vertriebs GmbH: Harry Sittenauer, Ernst ZimmermannArbeostrabe,5D-8057Eching,GermanyPhone(49)893195041FAX(49)893194253

IndiaKLB Instruments: I.D. PaulIE/17JhandewalanExtn.PostBoxNo.5726NewDelhi-110055India7532987Phone(91)11735899FAX(91)117532987

IsraelEL-GEV: Yoel Yogev52HaodemStreet,P.OBox501,Shoham73142IsraelPhone(972)39712056FAX(972)39712407

ItalyOrvem: Roberto TerziottoViaDomodossola,17,20145Milano,ItalyPhone(32)233611644FAX(32)2347093

JapanSun Instruments, Incorporated: Toshiro Kasai1-4-2 Minami Yukigaya, Ohta-Ku, Tokyo 145 JapanPhone(813)037263639FAX(813)37263689

Meisho: K. KitsukawaABEBldg.9-8,NishiIkebukuro,1-Chome,Toshima-Ku,Tokyo171Phone0339806541FAX81339807297

The Netherlands, Belgium, LuxembourgTE Lintelo Systems BV: Ben LinteloP.O. Box 456900AAZevenaar,TheNetherlandsPhone(31)316340804FAX(31)316340805

Russia, Poland, Hungary, Bulgaria, Rumania, Czech Republic, Slovakia, Ukraine, Latvia, Lithuania Hadaspectrum Co. Ltd.: Richard Kowalczyk47WilgiSt.04-831Warsaw,PolandPhone/Fax(48)22127148Hadaspectrum is also the European technical informationoffice for CHEMLEDs.

SpainAerotech World Trade LTD.: Robert A. Mosedale, Mike PhillipsSaintPeter’sRoad,Maidenhead,Berks,SL67QU,EnglandPhone(44)062834555FAX(44)0628781070

Sweden, Denmark, Norway, EstoniaHoltek: Mats RegardBox15035S-75015Uppsala,SwedenPhone(46)18503300FAX(46)18503304

TaiwanEmit Technology: Johnny Chen5F,Number8Lane235PaoChiaoRoadShintien, Taipai, Taiwan, ROCPhone(886)29174288FAX(886)29126504

829 Flynn Road, Camarillo, CA 93012 (805) 445-4500 FAX (805) 445-4502 Email: myrlin@telcomdevices.com Web Site: http://www.telcomdevices.com

Standard Packaging Options(a)

NIR

Mid-IR

0 1010 20203030

40405050

6060

7070

8080

9090

100100

110110

120120130130

140140150150

160160 170170 180

1.27

45ϒ CASE/GNDCATHODE

ANODE

0.43

1.271.25 ø REF

1.02

2.544.705.38

3.17

0.280.38

Detector

45ϒ 1.02

1.02

2.54

0.43

2.54

0.025

.100

4.67

5.33

3.18

ANODE

GLASSLENSCHIP

CATHODE

CATHODE

Ø 2.5 ± 0.2

ANODE

Ø 5.4 ± 0.2

ø 4.7± 0.1

3.0 ± 0.1WINDOW

SENSITIVITYSURFACE

Ø 0.45LEAD

4.3 ± 0.2

1.5 ± 0.2

13 MIN

Far Field Pattern with and without Ball Lens

Emitter Detector (1 and 2 mm)(b)

φ 0.39

φ 0.31

0.10

0.20

CalciumFluorideWindow

EmitterChip

φ 0.35

–70ϒ

–50ϒ

–30ϒ

WithParabolicReflector

–10ϒ 10ϒ 30ϒ

50ϒ

70ϒ

(a) Dimensions in millimeters(b) Smaller detectors in TO-18(c) Sapphire or CaF2 windows available

Far Field Pattern with and without Reflector

Parabolic Reflector (optional window)(c)

TO-18 (c) TO-5 (c)

Emitter

4