Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

p-on-n Strip Detectors: ATLAS & CMS

Single-Sided Lithographic ProcessingSingle-Sided Lithographic Processing( AC, Poly-Si biasing )( AC, Poly-Si biasing )

N Bulk

N+ Implants

P+ implants

Al Strips

“P” Bulk

N+ Implants

P+ implants

+++++

----- +++++

-----

- - - - -+++++

Surface damage

Radiation hardness “recipe”Radiation hardness “recipe”

P-on-N sensors work after bulk type inversion,P-on-N sensors work after bulk type inversion,Provided they are Provided they are biased well above depletionbiased well above depletion

Match sensor resistivity & thickness to fluenceMatch sensor resistivity & thickness to fluenceTo optimize S/N over the full life-timeTo optimize S/N over the full life-time

Follow simple design rules for guard & strip geometryFollow simple design rules for guard & strip geometry

Use Al layer as field plate to remove high fieldUse Al layer as field plate to remove high field@edges from Si bulk to Oxide (much higher V@edges from Si bulk to Oxide (much higher Vbreakbreak))

Strip width/pitch ~ 0.25: reduce CStrip width/pitch ~ 0.25: reduce Ctottot maintain maintainStable high bias voltage operationStable high bias voltage operation

Take care with process: especially implants…Take care with process: especially implants…

Surface radiation damage canSurface radiation damage canincrease strip capacitance & noiseincrease strip capacitance & noise

Use <100> crystal instead of <111>Use <100> crystal instead of <111>

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

ATLAS Transition Radiation Detector

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

ATLAS TRD Information

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

ATLAS TRD: e- separation

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

ATLAS TRD: particle identification

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

The CMS Pixel detector

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

The CMS Pixel detector: barrel modules

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

The CMS Pixel Detector: endcap disks

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

0.25 FE chip set: Production wafer layout• Full Chip set tested, production

well underway

• APV25 8” Wafer– Overall size 200mm – APV25 die ≈ 400– APVMUX+PLL die ≈ 100– Use IBM 0.25 technology

2000

1600

1200

800

400

02520151050-5-10

chan 2 chan 43 chan 107

closed symbols: peak mode: 270 + 38/pFopen symbols:deconvolution: 430 + 61/pF

2000

1600

1200

800

400

02520151050-5-10

chan 2 chan 43 chan 107

closed symbols: peak mode: 270 + 38/pFopen symbols:deconvolution: 430 + 61/pF

APV25 chip: excellent noise performanceAPV25 chip: excellent noise performanceShaping time in deconvolution ~ 25nsShaping time in deconvolution ~ 25ns

Radiation insensitiveRadiation insensitiveExcellent noise performanceExcellent noise performance

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

APV25 Test Results• Automatic wafer probing

– Allows systematic monitoring of yield

• Crucial to provide feed-back to foundry on process quality to ensure adequate yield is maintained

• Two cut wafers retested as individual die – statistics limited: upper limit 1%

good die failed– but no bad chips accepted

• Test time < 2mins/chip– 1 8inch wafer per probe station per

day– can complete testing in ~1-2 years

• Irradiation results– x-ray, pion & neutron - all excellent– tests with heavy ions and pions

• 8 chips x 10 LHC years• low SEU rate, no permanent

damage or latch up

““Typical” tested wafer mapTypical” tested wafer map

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

Silicon Sensor Geometry

Strip capacitance ~ 1.2pF/cm for w/p = 0.25Strip capacitance ~ 1.2pF/cm for w/p = 0.25Independent of pitch and thicknessIndependent of pitch and thickness

Use Use m thick Si for R < 60cm, Stripm thick Si for R < 60cm, Strip ~ 10cm~ 10cm

Use Use m thick Si for R > 60cm, Stripm thick Si for R > 60cm, Strip ~ 20cm~ 20cm

Expected S/N after irradiationExpected S/N after irradiation

S/N ~ 13 for thin sensors, short stripsS/N ~ 13 for thin sensors, short stripsS/N ~ 15 for thick sensors, long stripsS/N ~ 15 for thick sensors, long strips

Insensitive to irradiationInsensitive to irradiationfor <100> crystal latticefor <100> crystal lattice

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

Track Reconstruction (CMS)

Generation of seeds (Seed Generator)

• Construction of trajectories for a given seed (Trajectory Builder)• Ambiguity resolution (Trajectory Cleaner)• Final fit of trajectories (Trajectory Smoother)Each component has one or more implementation. Three different algorithms are currently fully

implemented: ( Combinatorial Track Finding, Connection Machine, Deterministic Annealing Filter)

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

ATLAS Reconstruction Sw

Software used

iPatRec Rel. 4.x athena reconstruction equivalent to atrecon Rel. 5.x old EDM validated for DC1 Layout Rel. 6.0.3 new “HLT” EDM validated for Pixels/SCT

xKalman Rel 6.0.3 using RD event to get truth association new EDM possible but not used because truth missing

Inner Detector Layout DC1 Initial

b-layer radius 5 cm 5 cm

longitudinal pixel size in b-layer 300 400

2nd pixel layer present absent

pixel disk -#2, forward TRT wheels

present absent

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

CMS Secondary Vertex Reconstruction: Principal Vertex Reconstructor

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

PV Resolutions and pulls

Alessia Tricomi - University & INFN Catania EPS 2003 17-23 July, Aachen

BJ/ resolutions and pulls