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Applications of Solder Alloys and Threats of Tin Whiskers
1
and Threats of Tin Whiskers
Dr. Ning-Cheng Lee
December 1st, 2015
Solder Alloys
• Low melting
– Lower thermal warpage
– Lower cost
• Medium melting
– Higher reliability
• High melting
• High Service Temperature & High Reliability
– Target 175C service temperature
– High thermal aging & TCT reliability
– High vibration reliability
– SMT solder paste, wire, preform process
Medium Melting Alloys
3
– Automotive, medical device, server, telecommunication applications
Alloy Designs - Indium Confidential
• SnAgCuSbBi (4)• SnAgCuSbBiNiCo• SACM (high Ag)
High Melting Solders
• Melting temperature > 260C, preferably > 280C
• Lead-free
• Applications
– Die attach
– High power devices, such as IGBT– High power devices, such as IGBT
– Automotive
4
Medium Melting
Prevailing Solder Alloys
5
Prevailing Solder Alloys
Prevailing Lead-Free Alloys
210
220
230 SnCu (+ dopants, e.g. Ni, Co, Ce)
SnAg (+ Cu, +Sb, + dopants, e.g. Mn, Ti,
Al, Ni, Zn, Co, Pt, P, Ce)
SnAg (+ Bi, + Cu, + In, + dopants)
Reflow Wave Hand
√
√√
√ √
√
√
√
6
170
180
190
200
Tem
p (
C)
SnZn (+ Bi) √
Most prevailing alloys: SnAgCu, with Ag 3-4%. Trend toward further reduced Ag.
BiSn(+Ag) (mp 140°C) on the rise.
High Thermal Fatigue ResistanceResistance
7
High Ag High TCT Life
• Changes in Ag content can have significant impact on thermal fatigue reliability
• Terashima et al. found that a decrease of Ag content from 4% to 1% decreases the thermal fatigue life (first failure) by a factor of about 2 about 2
– -40/125°C, 10 min dwell.– All alloys had 0.5% Cu
– Performance relative to eutectic Sn-Pb not reported
• Addition of other alloying elements which affect undercooling, formation of various IMCs, matrix properties & microstructure not well understood
S. Terashima, et al., J. Elec. Mater., Vol. 32, No. 12, p.1527 (2003). 8
Effect of Ag Content
High Ag result in long TCT life
All BGA assembled with SAC305 paste
9
Richard Parker, Richard Coyle, Gregory Henshall, Joe Smetana, Elizabeth Benedetto, “iNEMI Pb-FREE ALLOY
CHARACTERIZATION PROJECT REPORT: PART II - THERMAL FATIGUE RESULTS FOR TWO COMMON TEMPERATURE
CYCLES”, SMTAI, p.348-358, Orlando, FL, Oct. 14-18, 2012
Evolution of Interface with Increasing Cu Conc.
Cu (die side)
Ni (PCB side)
SAC
0, 0.5
0% Cu
0.5, 2
1
(Cu, Ni)6Sn5
Cu
(Cu, Ni)6Sn5 (2.7 um)
Cu
(Cu, Ni)6Sn5
Cu
(Cu, Ni)6Sn5
Cu
Crack
location
High Cu result in more
ductile failure (bulk solder) than brittle failure (IMC interface)
Ref: Henry Y. Lu, Haluk
Balkan, Joan Vrtis, and K.Y. Simon Ng, " Impact of Cu Content on the Sn-Ag-Cu Interconnects", 55th ECTC, P.113-119,
May 31-June 3, 2005
10Cu suppress dissolution of Ni. Hence, Ni3(P,Sn) disappear first, followed by NiPSn. But it also promotes more IMC formation on PCB (Ni) side & nucleation of Ag3Sn plates.
(Ni,Cu)3Sn4
NiPSn (500 nm)
Ni3(P,Sn) (300 nm)
Ni (3.84 um)
SnAg
(Cu, Ni)6Sn5
NiSnP + Ni3(P,Sn) (250 nm)
(Cu, Ni)6Sn5 (2.8 um)
(Cu, Ni)6Sn5 (2.7 um)
SAC305
Ni (4.68 um)
NiSnP (240 nm)
(Cu, Ni)6Sn5
(Cu, Ni)6Sn5
SAC3010
Ni
(Cu, Ni)6Sn5
(Cu, Ni)6Sn5
SAC3020
Ni
Cu conc.
No Ag3Sn plates in any locations of the solder joints for the 0.0Cu and 0.5Cu at time zero
High Cu lead to flourishing growth of Cu-Sn IMCs, which promotes the growth of Ag3Sn platelets.
High Shock Resistance
11
12Ref:Vijay Wakharkar& Ashay Dani, “Microelectronic Packaging Materials Microelectronic Packaging Materials Development & Integration Development & Integration Challenges for Lead Free Challenges for Lead Free”, Lead-free workshop, TMS, San Antonio, TX, March 12, 2006.
How Hard is SAC Alloys
13M. Date, T. Shoji, M. Fujiyoshi, and K. Sato (Hitachi), “Pb-free Solder Ball with Higher Impact Reliability”, Intel Pb-free
Technology Forum, 18th – 20th July 2005, Penang, Malaysia
14Ref:Vijay Wakharkar& Ashay Dani, “Microelectronic Packaging Materials Microelectronic Packaging Materials Development & Integration Development & Integration Challenges for Lead Free Challenges for Lead Free”, Lead-free workshop, TMS, San Antonio, TX, March 12, 2006.
Effect of Dopant Mn on IMC
GrowthGrowth
15
• High Shock Resistance, Good TCT Performance (Low Ag)
– Example (SACM0510 – Sn0.5Ag1Cu+Mn)-Sphere
Medium Melting Alloys
16“The Second Generation Shock Resistant And Thermally Reliable
Low Ag SAC Solder Doped With Mn”, SMTA International, Fort
Worth, TX, Oct. 13-17, 2013
Thermal Cycling Test Results
Bump Alloy
Characteristic Life 63.2% (ηηηη)
ValueRatio
(alloy/105)
SAC105 1468 1
SAC105M 2034 1.39
SAC305 1905 1.30
TCT (-40°°°°C/125°°°°C) performance of BGA assemblies
-55C/125C
Bump AlloyAssembly
Condition
Characteristic Life
63.2% (ηηηη)
Characteristic Life 50%
Weibull
Slope (ββββ)Value
Ratio
(Mn/105)Value
Ratio
(Mn/105)
SAC0510MFlux
24271.61
23171.62
7.26
SAC105 1510 1431 6.68
SAC0510MSAC305 paste
23611.37
22581.45
8.03
SAC105 1726 1559 4.3617
SAC305 1905 1.30
Liu etc, SMTAI, p.920-934, October 4-8, 2009, San Diego, CA.
“The Second Generation Shock Resistant And Thermally Reliable Low Ag SAC Solder Doped With Mn”, SMTA International, Fort Worth, TX, Oct. 13-17, 2013
TCT Results
Mn105
0510M
18
Significant
recrystallization
Minute
recrystallization
Earlier work Mn stabilize microstructureLiu etc, SMTAI, p.920-934, October 4-8, 2009, San Diego, CA.
“The Second Generation Shock Resistant And Thermally
Reliable Low Ag SAC Solder Doped With Mn”, SMTA
International, Fort Worth, TX, Oct. 13-17, 2013
High Melting
High Power Die Attach Solution Development
19
TLP Composite Solder TLP Composite Solder Preform
20
Composite Preform TLP Bonding Process
Sn -Ag So ld er
LayersAg L ayer
Su bs trate
Com p osite Preform
Assem bly
Sn -Ag So ld er
LayersAg L ayer
Su bs trate
Com p osite Preform
Assem bly(a)
S ubs trate
Co mp osite Preform
S ubstrate
S ubs trate
Join t Layer
After Reflow Solderin g
S ubs trate
Co mp osite Preform
S ubstrate
S ubs trate
Join t Layer
After Reflow Solderin g
(c)
(b)
21
Microstructures of TLP Bonds
Cu
Ag
Ag-Sn ζCu3Sn
(a) Optical and (b) SEM back-scattered electron micrographs of a solder joint
made with a composite preform between two Cu substrates (Peak reflow temperature 380ºC, TAL 9 min)
Cu(a)
(b)
Ag-Sn ζCu3Sn
22
BiAgX®
High-TemperatureHigh-TemperatureLead-free
Drop-in Replacement for
High-Pb Solder Paste
BiAgX® is a registered trademark of Indium Corporation23
Design of BiAgX ® - The Mixed Solder Paste
1. Using two metalpowders in the paste
2. 1st alloy dominates themelting behavior & themechanical properties.
3. 2nd alloy dominatesinterfacial reaction forwetting improvement.wetting improvement.
24
Thermal Storage
Tanimoto S., etc, JSAP, Sept. 2012
200oC
2mmx2mmx0.3mm Ti/Ni/Ag SiC/AMBC-SiN
25
Tin Whisker
26
27Swaminath Prasad, Flynn Carson, G.S. Kim, J.S. Lee, Y.C. Park, Y.S. Kim & K.S. Min, S.S. Lu, Liu Hui, & Xu Hai, S.H. Khor & C.L. Tan, “Plating Chemical Evaluations and Reliability of Pb-Free Leadframe Packages”,Pan Pacific: February 13, 2001.
28
Tension
Compression
29
4Tension
Tin Whisker Growth Mechanism
• Growth due to compressive stress
• Augmented by
– Cu-Sn IMC formation at grain boundary
– Small grain size
30
– Thermal stress due to mismatch in TCE
Chen Xu, Yun Zhang, Chonglun Fan and Joseph A. Abys, "Driving Force for Sn Whisker Formation:
Compressive Stress - Pathways for its generation and Remedies for its Elimination and
Minimization", QuickStart Conference, Libertyville, IL, Sept. 25, 2004
31
(microvoids & creep corrosion)
Tradeoff
Tradeoff
Reason
32
Reason
33
Density Ni=8.902,
34
Density Ni=8.902, Sn=7.31g/cc
Atomic wt Ni=58.69, Sn=118.71
Molar volume of 3 Ni + 4 Sn = 84.7 cc, larger than Ni3Sn4 molar volume (75.25cc). IMC formation cause net shrinkage.
Tin Whisker Suppression
• Alleviated by
– Ni plating on Cu
– Large grain size
– Thin solder layer
– Surface oxide
– Alloying with Bi
35
– Alloying with Bi
– Baking treatment (150°C/1 hr)
Chen Xu, Yun Zhang, Chonglun Fan and Joseph A. Abys, "Driving Force for Sn Whisker Formation: Compressive Stress - Pathways
for its generation and Remedies for its Elimination and Minimization", QuickStart Conference, Libertyville, IL, Sept. 25, 2004
36
IMC grow into Sn grain boundary
Flattened IMC won’t grow into grain boundary
37Coarsened Sn grain size
38
Direction of Alloy Development to Meet Evolving Applications to Meet Evolving Applications
39
Wetting Challenge
• Oxide thickness does not decrease with miniaturization.
• Reduced drilled hole size & increased aspect ratio (pin-to-hole) cause partial hole filling at wave soldering (due to decreasing laminar flow rate).
• Alloys with better wetting needed in order to avoid use of higher soldering temperature.
40
temperature.• Incorporation of low surface tension
elements, such as Bi, P, Sb beneficial.• Alloys with lower viscosity will also help.
(HP)
0
0.5
1
1.5
2
2.5
0.5 0.52 0.54 0.56 0.58
Surface Tension (N/M)W
ett
ing
Tim
e (
sec)
(Indium)0
0.5
1
1.5
2
Ag Al Au Bi Ce Co Cu Fe Ga Ge In La Mn Ni P Pb Pd Pt Si Sb Sn Ti Zn
Su
rface T
en
sio
n (
N/m
)
Wetting Speed Challenge
• Reduced chip size cause greater vulnerability toward chip disturbance at reflow soldering (Tombstoning, billboarding, wicking)
• Increase surface tension may reduce wetting speed, but cause more defect rate due to higher horizontal pulling force
• Need alloy with a slower wetting speed at melting temp via other approaches, such as a pasty alloy with high mass fraction of solid at onset of melting.
Mass Fraction of Solid EstimationSymmetry assumed for eutectic
41
0%
1%
2%
3%
4%
5%
6%
7%
Sn2Ag0
.5C
uSn2
.5Ag0
.8Cu
Sn3Ag0
.5C
uSn3
.5Ag1
Cu
Sn3.8
Ag0.7
Cu63
Sn3
7Pb
To
mb
sto
nin
g R
ate
(%
) .
(Indium)
0.56
N/m
0.51
N/m
y = 0.082e-5.0766x
R2 = 0.8882
0%
2%
4%
6%
8%
0% 20% 40% 60% 80%
Mass Fraction of Solid (%)
To
mb
sto
nin
g R
ate
(%
). 3.5-1
3.8-0.7Sn63
3-0.5
2.5-0.82-0.5
(Indium)
Fragility Challenge
• Miniaturized devices more portable, thus more risk to be dropped.
• Small joints more vulnerable to shock.• Joints with low fragility desired
– Lower hardness (such as low Ag SAC)
– Dopant which reduce IMC thickness, scallop size, or fragility, such as Mn, Ti, Y, Bi, Ce, Ni, Co, Pt
Drop Test Performance (Mean value)
0
10
20
30
40
Sn
1.1
Ag
0.4
5C
u0
.1G
e
Sn
1.1
Ag
0.4
7C
u0
.06
Ni
Sn
1.0
7A
g0
.47
Cu
0.0
85
Mn
Sn
1.1
Ag
0.6
4C
u0
.13
Mn
Sn
1.1
3A
g0.6
Cu
0.1
6M
n
Sn
1.1
Ag
0.4
5C
u0
.25
Mn
Sn1
.07
Ag
0.5
8C
u0
.03
7C
e
Sn
1.0
9A
g0.4
7C
u0
.12
Ce
Sn
1.0
5A
g0
.56
Cu
0.3
Bi
Sn
1.1
6A
g0
.5C
u0
.08
Y
Sn
1.0
Ag
0.4
9C
u0
.17
Y
Sn
1.0
5A
g0
.73
Cu
0.0
67
Ti
Sn
1.0
Ag
0.4
6C
u0
.3B
i0.1
Mn
Sn
1.0
5A
g0
.46
Cu
0.6
Bi0
.06
7M
n
Sn
1.1
9A
g0.4
9C
u0
.4B
i0.0
6Y
Sn
1.1
5A
g0.4
6C
u0
.8B
i0.0
8Y
Sn
1.0
5A
g0
.64
Cu0
.2M
n0.0
2C
e
SA
C30
5
SA
c38
7
SA
C10
5
Sn6
3
No
. o
f D
rop
s t
o F
ail
ure
As-reflowed
After aging
42
scallop size, or fragility, such as Mn, Ti, Y, Bi, Ce, Ni, Co, Pt
– Form more ductile solder via high Cu
– Dopants which reduce Kirdendall void formation, such as Ni, In, high Cu
– Reduce spalling, such as high Cu– Fine grains to nullify effect of anisotropic
orientation of Sn crystal
(Kao)
(Indium)
(Lu et al)
Cu (die side)
Ni (PCB side)
SAC
0, 0.5
0% Cu
0.5, 2
1
Crack location
Sn
1.1
Ag
0.4
5C
u0
.1G
e
Sn
1.1
Ag
0.4
7C
u0
.06
Ni
Sn
1.0
7A
g0
.47
Cu
0.0
85
Mn
Sn
1.1
Ag
0.6
4C
u0
.13
Mn
Sn
1.1
3A
g0.6
Cu
0.1
6M
n
Sn
1.1
Ag
0.4
5C
u0
.25
Mn
Sn1
.07
Ag
0.5
8C
u0
.03
7C
e
Sn
1.0
9A
g0.4
7C
u0
.12
Ce
Sn
1.0
5A
g0
.56
Cu
0.3
Bi
Sn
1.1
6A
g0
.5C
u0
.08
Y
Sn
1.0
Ag
0.4
9C
u0
.17
Y
Sn
1.0
5A
g0
.73
Cu
0.0
67
Ti
Sn
1.0
Ag
0.4
6C
u0
.3B
i0.1
Mn
Sn
1.0
5A
g0
.46
Cu
0.6
Bi0
.06
7M
n
Sn
1.1
9A
g0.4
9C
u0
.4B
i0.0
6Y
Sn
1.1
5A
g0.4
6C
u0
.8B
i0.0
8Y
Sn
1.0
5A
g0
.64
Cu0
.2M
n0.0
2C
e
IMC Plate Challenge
• Small joint more vulnerable to IMC plate (such as Ag3Sn) formation, which can cause early failure.
• Alloys with low tendency of forming large IMC plate needed. (Lee etc.) (SAC387)
43
forming large IMC plate needed.
– Reduced Ag content or rapid cooling process through whole manufacturing process critical.
• 97Sn2.3Ag0.5Cu0.2Bi is favored by IBM
– Addition of dopants such as Znwill suppress formation of plate through reducing undercooling.
(Lee etc.) (SAC387)
(IBM)