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Applied Solar Expertise
Dr. Winfried Hoffmann – ASE Vice President EPIA Consultant Applied Materials Solar Member of Scientific Board of FhG-ISE and Supervisory Board of ISFH and Helmholtz
Thin Films in Photovoltaics: Contribution to a Future
Mainstream Electricity Provider
Society Vacuum Coaters Chicago April 18th, 2011
Main
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2
1. EPIA is the worlds biggest PV only oriented industrial
association with currently over 240 members
2. The membership represents
# the global PV industry
# the complete value chain (material production,
equipment manufacturing, component production,
system integration, R&D institutes etc)
# many national PV associations
3
EREC – European Renewable Energy Council Umbrella organisation representing all RES sectors: AEBIOM European Biomass Association EBB European Biodiesel Board EBIO European Bioethanol Industry Association EGEC European Geothermal Energy Council EPIA European Photovoltaic Industry Association ESHA European Small Hydropower Association ESTIF European Solar Thermal Industry Federation EUBIA European Biomass Industry Association EWEA European Wind Energy Association EUREC Agency European Renewable Energy Research Centres Agency
Associate members: EU-OEA European Ocean Energy Association EREF European Renewable Energy Federation ESTELA European Solar Thermal Electricity Association
Representation of European RES industry, trade & research
Source:
• Photovoltaic market and generation cost: past and near future
• The power of Price Experience Curves – for PV modules and relevant thin film technologies
• Thin vacuum deposited films for c-Si wafer based and Thin Film modules
• Long term perspective towards 100% global energy supply by Renewables with PV playing an increasingly important role
Content
110418 4 Dr. Winfried Hoffmann – SVC: Thin Films in PV
5
PV Solar – serving a Multitude of Customer Needs
on-grid off-grid consumer high efficiency
€/kWh €/hr light W/m ² g/W
Source: Fraunhofer ISE
€/m² / aesthetics €/W flexibility W/mm²
Source: EPIA market workshop, Paris, 2011
Historical and next 5 year PV market growth (bottom-up)
110418 6 Dr. Winfried Hoffmann – Thin Films in Photovoltaics (SVC)
16928
280 331 471 581 1119 1439 1581 2513
6168 7263
21300
24200
31900
35500
43000
14000 15700 18400 20000
23200
0
5000
10000
15000
20000
25000
30000
35000
40000
45000
50000
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Historical Data
EPIA Policy Driven
EPIA Moderate
Average growth 2000 – 2010 51% p.a.!!
[MW]
6% pa
20% pa
SET For 2020 – PV penetration in EU - a top-down approach
Baseline Scenario: 4%
Paradigm Shift Scenario: 12%
Share of e-Demand by 2020
Indicative
2010 2030 2020
GW
Accelerated Scenario: 6%
Cumulative
Volume (GW)
8 8
PV reduces the afternoon peak!
Electricity Load Curve in Germany
And Impact of up to 50 GW PV
9
Competitiveness Between Electricity Generation Cost PV and Electricity Price
Ref: W. Hoffmann personal estimates, 1999
10
1
10
100
1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05
MW accumulated
AS
P in $
/W
PEF 20%
source: NAVIGANT
1980 2005 20081990 2000
Price Experience Curve
Photovoltaic Modules
11
The Power of Price Experience Curves (PEC)
Source: Adapted from National Renewable Energy Laboratory
Cumulative Production
Pro
du
ct P
rice
Log Quantity
Log Price
-40%
-30%
-20%
+10%
Dominated by Technology
Dominated by Materials & Energy
Price Experience Factor (PEF)
12
DRAM – Moore´s Law
Experience Curve
Source: Applied Materials, Semiconductors Group, 2009
1,E-07
1,E-06
1,E-05
1,E-04
1,E-03
1,E-02
1,E-01
1,E+12 1,E+14 1,E+16 1,E+18 1,E+20
Cumulated bits
DR
AM
Price [
$cents
/ b
it]
PEF 40%
1980 1990 2000 2008
Experience Curve
1,E-07
1,E-06
1,E-05
1,E-04
1,E-03
1,E-02
1,E-01
1,E+12 1,E+14 1,E+16 1,E+18 1,E+20
Cumulated bits
DR
AM
Price [
$cents
/ b
it]
PEF 40%
1980 1990 2000 2008
13
Semiconductor – Tremendous Development
Source: Semiconductor Insights Inc.
4 bit Microprocessor, Intel, 1971
1971
Today
State-of the Art Microprocessor, AMD, since 2005
AMD PMOS transistor with
physical gate length of 42nm
Smallest Technology Dimension
14
DRAM – Moore´s Law
Experience Curve Driven by Technology
1,E-07
1,E-06
1,E-05
1,E-04
1,E-03
1,E-02
1,E-01
1,E+12 1,E+14 1,E+16 1,E+18 1,E+20
Cumulated bits
DR
AM
Price [
$cents
/ b
it]
PEF 40%
1980 1990 2000 2008
Source: Applied Materials, Semiconductors Group, 2009
10
100
1000
10000
1975 1985 1995 2005
Years
Sm
alle
st
Technolo
gy D
imensio
n [
nm
]
Indicated year when vo lume share
of new technology node > 5%
15
Atlantic Hotel Sail City,
Bremerhaven, Germany
~ 500 million m2
coated glass p.a.
glass glass
coating
Baltimore Visitor Center
Baltimore, MD USA
Bird’s Nest Stadium,
Beijing PRC
Architectural Glass
16
Low-e Coatings
Double Ag Layer Leading Edge Values
Technology PVD Sputtering
Glass Size: 3,21m x 6,0m
Layer Uniformity: < 2%
Manuf. Line length: 200 - 250m
Vacuum pressure: 10-6 mbar
Output / min: 1,3 glasses
Output / year: 10km2
(size of 1400 soccer
fields)
Ref.: Applied Materials, glass division, 2009
17
10%
100%
1000%
1,E+01 1,E+02 1,E+03 1,E+04
Cumulated Coated Glass [Mio m2]
Rela
tive C
oating C
osts
/ m
2
PEF 17%
2000 200519901980
Price Experience Curve
Glass Coating
Source: Applied Materials, Energy and Environmental Solutions, 2009
18
Technology PVD Sputtering
Glass Size: 3,21m x 6,0m
Layer Uniformity: < 2% for layers in the 5-20nm range
Manuf. Line length: 200m - 250m
Output / year: 10km2 (size of 1400 soccer fields)
corresponding to 2GW (at 20% efficiency)
Glass Coating Equipment
Source: Applied Materials, Energy and Environmental
Solutions, 2009
19
Price Experience Curve Driven by Technology
0,1
1,0
10,0
1970 1980 1990 2000 2010
Years
Syste
m C
apacity (
Mill
ion m
2 p
.a.)
Planar
Magnetron
DC Rotatable
Magnetron
AC Rotatable
Magnetron
Fast Cycle
Time, High
Volume
Glass Coating
Source: Applied Materials, Energy and Environmental Solutions, 2009
10%
100%
1000%
1,E+01 1,E+02 1,E+03 1,E+04
Cumulated Coated Glass [Mio m2]
Rela
tive C
oating C
osts
/ m
2
PEF 17%
2000 200519901980
20
Display: TFT-LCD Panel Technology
Liquid
Crystal
Color Filter
PVD
PECVD
21
Display – Experience Curve
Experience Curve
1%
10%
100%
1 10 100 1000
Cumulated Display Area [million m2]
Rela
tive C
osts
[%
]
PEF 35%
1997 2000 2005 2009
Source: Applied Materials, Display Group, 2009
22
Substrate Size Expansion in LCD
Gen 2 Gen 2.5 Gen 3 Gen 3.5 Gen 4 Gen 6
370 x 470mm
Gen 5 Gen 7
Gen 8 = 5.7 square meters 2.2
me
ters
Gen 2 Gen 2.5
Gen 3
Gen 3.5
Gen 4
Gen 6
370 x
Gen 5
Gen 7
Gen 8 = 5.7 square meters
2.6 meters
2.2
me
ters
4 up
10.4”
6 up
12.1”
6 up
15 ~ 17”
6 up x 37” wide 6 up x 52” wide 6 up
19 ~ 24”
Gen 6
Gen 7
23
TFT-LCD Panel Technology
TFT PECVD
Color Filter PVD Source: Applied Materials, Display Group, 2009
24
Display
0,1
1,0
10,0
100,0
Jan-90 Jan-95 Jan-00 Jan-05 Jan-10 Jan-15
Years
Dis
pla
y S
ubstr
ate
Are
a [
m2]
1990 1995 2000 2005 2010 2015
Laptop
Desktop
TV
Gen 2 Gen 2.5 Gen 3 Gen 3.5 Gen 4 Gen 6
370 x470mm
Gen 5 Gen 7
Gen 8 = 5.7 square meters
2.6 meters
2.2
mete
rs
Gen 2Gen 2.5
Gen 3
Gen 3.5Gen 4
Gen 6
370 x470mm
Gen 5
Gen 7
Gen 8 = 5.7 square meters
2.6 meters
2.2
mete
rs
4 up
10.4”6 up
12.1”
6 up
15 ~ 17”
6 up x 37” wide 6 up x 52” wide6 up
19 ~ 24”
Gen 6
Gen 7
Driven by Technology Experience Curve
1%
10%
100%
1 10 100 1000
Cumulated Display Area [million m2]
Rela
tive C
osts
[%
]
PEF 35%
1997 2000 2005 2009
Source: Applied Materials, Display Group, 2009
announced
25
From Display to Solar
Gen 8.5 AKT-55K PECVD System Applied SunFab™
Gen 8.5 PECVD System
Glass
a-Si
SiNx
SiNx n+ a-Si
Thin Film Transistor (TFT) Structure Thin Film Solar Structure (Single Junction)
Glass
TCO a-Si
Al
26
TF: New Module Size – 5.7m2
SunFab
27
PV
28
1
10
100
1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05
MW accumulated
AS
P in $
/W
PEF 20%
source: NAVIGANT
1980 2005 20081990 2000
Price Experience Curve Driven by Technology
Wafer thickness
0,7mm → 0,15mm
Kerf loss
0,5mm → 0,10mm
Efficiency
8% → 22%
Automation
Industrial manufacturing
Economy of scale
0,1MW → 200MW
Thin Film
Photovoltaic
29
1. PEC for c-Si will continue
2. Reason for different PEC and PEF for Thin Film PV
3. Different growth rates for global PV installations as parameter
4. Different fraction of TF/c-Si as parameter
PEC = Price Experience Curve PEF = Price Experience Factor
30
PV Value Chains
31
PV Future – Eight Cases
Volume Scenarios Evaluation Cases
Volume
Growth Baseline Paradigm Shift
TF Share 15% 15%→35% 15% 15% →35%
TF PEF 20% 25% 20% 25% 20% 25% 20% 25%
Case 1 2 3 4 5 6 7 8
PV Volume Scenarios
0
50
100
150
200
2010 2012 2014 2016 2018 2020
Years
Worldw
ide a
nnual P
V insta
llations
in G
Wp
Baseline
Paradigm Shift
Source: EPIA, Set for 2020
0,1
1,0
10,0
1,E+03 1,E+04 1,E+05 1,E+06
MW accumulated
AS
P in $
/W
Case A – TF 20%
Case A – cSi 20%
PEC Scenario Case A: Baseline
TF share 15% const
TF PEF 20%
Case B:Paradigm Shift
TF share 15% → 35%
TF PEF 25%
0,1
1,0
10,0
1,E+03 1,E+04 1,E+05 1,E+06
MW accumulated
AS
P in $
/W
Case B – TF 25%
Case B – cSi 20%
c-Si Technology
price expectation in 2020
ca. 60 – 80 $ct/W
Thin Film Technology
price expectation in 2020
ca. 30 – 70 $ct/W
Photovoltaic – Future Price Development
33
Price Contributors Installed Watt
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
5% 10% 15% 20% 25% 30%
Module Efficiency
Price c
ontr
ibution in €
/W
P(module):
resulting price
for module
P(tot): to tal price for installed module
P(power): power related contribution
Typical module
efficiency of 14%
P(area): area
related contribution
Module Price vs. Efficiency Price Contribution
cSi TF
Price(total) 3.0€
Price(power) 0.5€
DC-AC inverters &
approval procedures
+ Price(area) 0.7€
mounting structure, cab-ling
and installation costs
+ Price(module) 1.8€
module price ex-works &
a margin for the installer
BOS – Complete Systems
Consideration
0.2 - 0,3 €/W
@ 14% Efficiency
34
a) low cost (price) per m² (BIPV) at lower eta (4-6%)
- deposition area: 0,6 → 1,4 → 3 → 5 → 10 m² (…1/2 the jumbo size)
- utilize technology development in TFT technology (e.g. ASI)
- creation of semitransparency by thin-layers
- flexible solar cells (… web coaters)
b) low cost (price) per Wp
- ASI/µc-Si and II – VI compound (CIS, CTS)
- efficiency from 8 – 12 % today up to 10 – 15 % in 2010 and
14 – 20 % in 2030
Thin Film Technologies have:
35
Project: SCHOTT Solar
Location: Alzenau
Function: Façade of Production building
Building Integrated Photovoltaic (BIPV)
Thin Film PV Value Chain
36
Large glass (or flexible)
Substrate
(0.7 – 5.7m2)
PVD TCO
Installation Laser
Patter- ning
Absorber Laser
Patter- ning
PVD Back
Contact
Laser Pattern-
ing
Module Finish
Thin Film Silicon PECVD a-Si and µc-Si (6 ... 10 7 ... 12)
CIGS co-evaporation (10 ... 12 13 ...15)
Sputtering and selenization (9 ...11 12 ...14)
CdTe/CdS close space sublimation (9 ... 11 10 ...12)
Same/similar process steps with same/similar cost / m²
Different processes and material cost for absorber formation
37
Glass Substrate
Transparent Conductor
Amorphous Silicon
Microcrystalline Silicon
Back Contact
a-Si:H/c-Si:H Cell Spectral Response
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
20
0
40
60
80
100
0
1
2
3
4
5
Nu
mb
er o
f Su
nlig
ht
Ph
oto
ns
(m-2
s-1m
icro
n-1
) E+
19
Rel
ativ
e Ex
tern
al Q
uan
tum
Eff
icie
ncy
, %
c-Si:H junction a-Si:H junction
AM 1.5 global spectrum
Tandem Junction Increases Voltage Collects More Light Enhances Stability
Thin Film –Tandem Junction Harvest the Solar Spectrum
Wavelength, microns
Glass Substrate
TCO
Amorphous
Silicon
Back Contact
38
Layer Deposition Thin Film Tandem Cell: a-Si / µc-Si
Amorphous Silicon
Microcrystalline
Silicon
Transparent Conductor
Glass Substrate
Back Contact
PVD (Inline System)
Applied SunFab™ PECVD system
1-2m
250-500nm
n p
p
Doped layer: typically 20-30nm
PECVD (Batch System)
n n+
ATON,
Applied Materials
300nm
1m
39
Flexible Solar – Expanding Applications
• Lightweight
• Conformable
Building Integrated PV
Non-Rigid Applications
Flexcell
Flexcell
PowerFilm
Uni-Solar
ISS Saaku
Maier Sports
SonnenEnergieWinnen
Flickr Photo
40
Excellent Market Opportunity
• Annual lightweight rooftop opportunity ~4 GWp
– Worldwide for PV < 10 kg / m2
• Excellent Fit for Flat Industrial Rooftops
– Annual new & replacement roofs in western Europe
represents a surface area >2 GWp equivalent PV.
• Meets EU Feed-In-Tariff Requirements
– Building Integrated Photovoltaics (BIPV)
• Compliments Existing Technologies
• Scale: Multi-million m2/year of coated film
Uni-Solarr
Flexcell
41
Addressing Flex PV Technologies
FLEXIBLE
SUBSTRATE
BACK
CONTACT
ABSORBER
LAYER
TRANSPARENT
CONDUCTOR
Flex PV
Back
Contact CIGS
Thin Film
Silicon
CdTe
TCO
Common equipment
solutions drive costs
down for all players
Unique equipment
solutions required
42
Traditional Thin Film Technologies: a-Si, a-Si/µc-Si, CTS, CI(G)S
Large area deposition technologies for all layers (PVD, CVD)
High deposition rate technologies with high performance layers
Innovative cell architectures for higher efficiencies
43
c-Si value chain
Relevant steps for vacuum deposited thin films:
# ARC/passivation: from AP-CVD TiO2 to PE-CVD or PVD SiNx
# metallization: from evaporated Ti-Pd-Ag to screen printing of Al- (back) and
Ag- (front) paste towards future Al - evaporation
Si purification Poly
Silicon Ingots Wafering
Cell Production / Manufacture Laminate Module Installation
Saw Damage
Emitter Formation
Passivation Metallization Edge
Isolation Inspect /
Test
Ph
oto
44
c-Si Technology
Existing films, eg SiNx, with high throughput and accuracy
Todays metalization with screen printed Ag- paste to be exchanged with evaporated Al- films, which have significantly lower material cost
After medium term introduction of decreasing thickness of wire cut wafers (from 180 – 200 µm today to less than 100 um) there will ultimately be 10 µm crystalline Si films by high rate deposition from TCS – if done properly efficiencies above 20% may be reached. Additionally the two worlds of stable and high efficiency c-Si and the integrated series connection of „traditional Thin Film“ may be combined
In the long term nanotechnology may help to have band gap tayloring allowing principally multibandgap Si cells with the potential for efficiencies beyond 30%
45
Long-term PV Roadmap Development of Si-Thickness for various technologies
0,01
0,1
1
10
100
1000
1990 2000 2010 2020 2030 2040
Sil
ico
n T
hic
kn
es
s [
µm
]
20% → 25% → 30%+
15% → 20% → 25%
10% → 15% → 20%
440µm WT, 400µm KL Efficiency
Development
300nm a-Si (Single Jct.)
Long Term
1,5µm a-Si / µcSi
(Tandem Jct.)
50µm
wafer ”curfless cut“ and ribbons
120µm WT, 100µm KL
180µm WT (Wafer Thickness)
140µm KL (Kerf Loss)
Ref: W. Hoffmann personal estimates, 2009
Multi jct &very thin
Intrinsic layers
Integrated Thin Film
and c-Si approach
c-Si wafer
46
As deposited (amorphous Si-layers)
70nm
Si SiO2
Si-Substrate
0.8 1.0 1.2 1.4 1.6 1.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0 5nm Si, 1100°C 4nm Si, 1100°C 3nm Si, 1100°C 2nm Si, 1100°C
Inte
nsit
ät
[a.u
.]
Energie [eV]
Oxide thickness:
3nm, 10 periods
Energy [eV] Source:
Enhance the Absorption Si/SiO2-Super Lattice for Band Gap Shifting
47
47
Multi Junction Solar Cells Combine Materials with Different Absorbance Behaviour
500 1000 1500 2000 25000
200
400
600
800
1000
1200
1400
1600 L
eis
tun
gsd
ich
te [
W/m
2µ
m]
AM15
GaInP
GaInAs
Ge
Wellenlänge [nm]
Quelle:
Po
we
r d
en
sity [W
/m2µ
m]
Wave length [nm]
48
Source
48
Ga0.65In0.35P
Tunnel diode
Ga0.83In0.17As
Tunnel diode
Ge
ARC
n-graded Ga1-x
InxAs buffer layer
p-Ge substrate (100)
p+-AlGaInAs - barrier layer
p-GaInAs - base
n-GaInAs - emitter
n+-AlGaInP/AlInAs - barrier layer
p++-AlGaAs
p+-AlGaInP - barrier layer
p-GaInP - base
GaInP - undoped layer
n-GaInP - emitter
n+-AlInP - window layer
cap layer
n++-GaAs or GaInP
p+-GaInP - barrier layer
GaInAs - undoped layer
p+-GaInAs - barrier layer
front contact
rear contact
p++-AlGaAs
n++-GaInAs
n- doped window- and nucleation layer
n-Ge diffused emitter
1.7 eV
1.3 eV
0.7 eV
Photovoltaic Optoelectronics
Recent world record of 41% at 500x concentration
49
Concentrated PV Combine Mutli-Level Junctions with Optical Magnification
IBM:
Concentration
x2000, liquid met-
al cooling system
with thin layer
of Ga and In
Challenges
High efficiency solar cell
Optical system with tracking systems
Cooling the solar cell
Source: Sungri
50
Performance of a Concentrix System 5,8 kW Nominal Power
Data: July 27th 2008, Seville Spain
For comparison: typical curve for flat panel
51
High Optical Concentration Photovoltaic Lorca, Spain
Source: Concentrix Solar
Technology Evolution
ref: W. Hoffmann personal estimates
0 5 10 15 20 25
0
0 5 10 15 20 25
0
25
75
100
Module Efficiency [%]
today c-Si
TF
a-Si-pin/pin,
a-Si/µc-Si,
II-VI
dye a-Si-pin II-VI
r/mg
r/mg
mc
mc
Cz
Cz
+ (4 to 5) years *
+ (10 to 13) years *
Si III -V
50
30
Mo
du
le p
ric
e (
rel.
Un
its)
@ - (8 to 10) %
price decrease
per year
Beyond
20 years
OPV
r ribbon mg metallurgical grade Silicon mc multicrystalline Cz Czochralski CPV concentrated PV OPV organic PV
53
Share of PV Technologies
0%
20%
40%
60%
80%
100%
2010 2015 2020 2025 2030
New Technologies
TF
cSi
Ref: W. Hoffmann personal estimates, 2008
0
2000
4000
6000
8000
10000
2010 2020 2030 2040 2050
Cu
mm
ula
ted
PV
Po
wer
[GW
]
0
200
400
600
800
1000
Ye
ary
in
sta
lle
d P
V P
ow
er
[GW
]
0%
10%
20%
30%
40%
50%
2010 2020 2030 2040 2050
An
nu
al
PV
Gro
wth
Ra
teRES-thinking 2050 Worldwide PV Growth Scenario till 2050
PV Growth Rate PV Volume Growth
CAGR 2000-2009: 45%
Ref: EREC and EPIA 2010
Cu
mu
late
d P
V P
ow
er
[GW
]
Yearl
y I
nsta
lled
PV
Po
wer
[GW
]
Source: EREC RES-Thinking, 03/2010
10
100
1000
10000
100000
2010 2020 2030 2040 2050
in T
Wh
/ a
1% of total
10% of total
Total electricity production
PV electricity production
EU-27
100% target for RES of final energy
All RES sources to contribute
43% electricity share assumed (vs. 37% in [r]evolution scenario)
World (OECD)
80% target for RES of final energy
43% electricity share assumed, too
PV covers about 1/4 of electricity and about 1/6 of final energy demand
Total PV energy supply in 2050: 11k TWh/a
PV Growth Assumption for 2050
RES-thinking 2050 – World PV Growth Scenario till 2050
Ref: EREC 2010 and W. Hoffmann personal estimates
56
Primary Energy Need in 2100
600.000 TWh
120.000 TWh
Extrapolation with today's tech- nologies and energy sources
2000
2100
2000
2100
Assuming energy saving, Shift to electricity and consequent use of renewables
ref.: World Energy Council & W. Hoffmann personal estimates
200.000 TWh
100.000 TWh
Same quality of life with much less energy
70.000 TWh
100.000 TWh
Schmid & Sterner (2010)
Authors estimate (2010)
2100
IEA PV Roadmap Vision
PV cumulative installed capacity to reach 900 GW in 2030 and 3000 GW in 2050
ETP 2010
Hi-RE Scenario
Projection for Future RE Portfolio for a 100% Global End Energy Coverage
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
Towards 2050 Towards 2100
RE
S s
ha
re in
%Non RES
Other RES
Bio Mass
Wind
STC
Solar Thermie
PV
ref.: W. Hoffmann, own estimates 09/2010
Source:
110418 59 Dr. Winfried Hoffmann – SVC 2011
The World Wide Super Grid
Sou
rce:
So
lar
Mill
enn
ium
AG
, Erl
ange
n
Super Grid „EUMENA“ 2010 - 2050
Super Grid „NAFTA“ 2020 - 2060
Super Grid „ASIA“ 2030 - 2070
Super Grid „AUSTRALIA“ 2040 - 2080
Super Grid „WORLD WIDE“ 2050 - 2100
Electricity
wind off-/ on shore
Solar Thermal Power Plant
PV Solar Electricity
Other Renewables
Biofuel/Hydrogen
for Transportation
Solar Thermal
for heating and cooling
1
2
3
4
1
2
3
4
5
5
5
3
3
5
: W. Hoffmann 2003
Main
Color
Palette
Secondary
Color
Palette
CMYK
0/25/100/0
RGB
253/196/0
CMYK
5/80/100/0
RGB
224/81/21
CMYK
0/0/0/100
RGB 0/0/0
CMYK
5/95/100/0
RGB
227/50/38
CMYK
0/70/0/10
RGB
218/104/157
CMYK
50/80/0/0
RGB
148/83/161
CMYK
100/5/5/10
RGB
0/152/203
CMYK
30/8/100/15
RGB
165/175/41
CMYK
0/0/0/60
RGB
98/100/100
60
Munich, 28/10/2009 TITLE OF THE PRESENTATION
Feria Valencia, Valencia, Spain
5th World Conference on
Photovoltaic Energy Conversion
The most inspiring Platform for the global PV Solar Sector
www.photovoltaic-conference.com
Conference: 6-10 September 2010 Exhibition: 6-9 September 2010
25th European Photovoltaic Solar Energy Conference and Exhibition
25th
European Photovoltaic
Solar Energy
Conference and Exhibition
36th
US IEEE
Photovoltaic
Specialists Conference
20th
Asia/Pacific PV
Science and Engineering
Conference
Applied Solar Expertise
Dr. Winfried Hoffmann – ASE
Vice President EPIA
Consultant Applied Materials Solar
Member of Scientific Board of FhG-ISE and Supervisory Board of ISFH and Helmholtz
Thank you very much!