ASPICs for High Energy Physics Applications Deepak Gajanana, Martin van Beuzekom Nikhef (National...
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ASPICs for High Energy Physics Applications Deepak Gajanana, Martin van Beuzekom Nikhef (National Institute for Subatomic Physics), Amsterdam Xaveer Leijtens
ASPICs for High Energy Physics Applications Deepak Gajanana,
Martin van Beuzekom Nikhef (National Institute for Subatomic
Physics), Amsterdam Xaveer Leijtens Eindhoven University of
Technology, Eindhoven 4-06-20141TIPP 2014 DGB et al.
Slide 2
Contents TIPP 2014 DGB et al.24-06-2014 1. Introduction 2.
Generic Integration Technology (InP) Example photonic ICs
Application in HEP experiments An Application Specific Photonic
Integrated Circuit integrates multiple optical components like
sources, detectors, modulators etc. to save area, cost, power and
add more functionality.
Slide 3
Optical Waveguide TIPP 2014 DGB et al.34-06-2014 Simulated mode
distribution 2 m 0.6 m Scanning Electron Microscope (SEM)
photograph InGaAsP (1.3) InP Materials could be Si, Binary, Ternary
and Quaternary semiconductors. Indium Phosphide (InP) in
combination with InGaAsP has advantages of making light sources,
detectors and other circuits at 1550 nm (3 rd generation telecom
wavelength).
Slide 4
Waveguide fabrication process TIPP 2014 DGB et al.44-06-2014
InP-substrate InGaAsP InP
Slide 5
Optical Waveguide TIPP 2014 DGB et al.54-06-2014 75 m human
hair
Slide 6
Arrayed Waveguide Grating (AWG) COBRA 1988 TIPP 2014 DGB et
al.64-06-2014 Smit, El. Lett, 1988
Slide 7
MMI (Multi Mode Interference) Couplers TIPP 2014 DGB et
al.74-06-2014 Simulated pattern Experimentally imaged pattern
Geometry of MMI-couplers Acts as power splitter/combiner. Various
power ratios possible.
Slide 8
Mach Zehnder Switch TIPP 2014 DGB et al.84-06-2014 Electric
field changes the refractive index and hence the phase change of
the optical wave
Slide 9
Photonic Integration with basic building blocks TIPP 2014 DGB
et al.94-06-2014
Slide 10
Moores law for InP based PICs TIPP 2014 DGB et al.104-06-2014
AWG-based devices
Slide 11
Moores law for InP based PICs TIPP 2014 DGB et al.114-06-2014
Steenbergen 8x20 GHz WDM receiver PTL, 1996
Slide 12
Moores law for InP based PICs TIPP 2014 DGB et al.124-06-2014
Infinira 10x10 Gb/s WDM TRX 2005, 51 components
Slide 13
Moores law for InP based PICs TIPP 2014 DGB et al.134-06-2014
Nicholes, MOTOR chip, OFC 2009, UCSB, 145 components
Slide 14
What Next? TIPP 2014 DGB et al.144-06-2014 Commercial
Advantages : Integrating more functionality, reducing size and
reducing cost
Slide 15
Photonic IC Generic Integration platform TIPP 2014 DGB et
al.154-06-2014 optical amplifier phase modulator PhaseAmplitude
polarization converter Polarization waveguide Passive New design
Powerful layout tools Powerful circuit simulation tools Designs
from designers using the same platform Application Photonics Design
Manual A designer Multi-project wafer Device back to users Wafer
fab
Slide 16
History repeats itself TIPP 2014 DGB et al.164-06-2014 MPC79,
Lynn Conway Silicon electronic ICs 1979 Indium phosphide photonic
ICs 2012
Slide 17
Examples of ASPICs and applications TIPP 2014 DGB et
al.174-06-2014
Slide 18
External modulation technique TIPP 2014 DGB et al.184-06-2014
Modulators form the heart of the external modulation technique. InP
Metal Data arm Databar arm Laser input Light output Mach Zehnder
(MZ) Modulator Optical modulator Continuous wave injection laser
Photo diode Amplification Digital read-out Chip Modulation Data
acquisition & processing CW Laser Data
Slide 19
KM3NeT is a cubic kilometer neutrino telescope to be installed
in the Mediterranean sea. For more information :
www.km3net.orgwww.km3net.org High density data readout in remote
submarine conditions. Savings in area, cost and power motivate
innovation, research and development of ASPICs. KM3NeT Detector
concept TIPP 2014 DGB et al.194-06-2014 320m
Slide 20
Concept for 80 Channels with Overlay DWDM* TIPP 2014 DGB et
al.204-06-2014 Shore station 50/50 APD Lasers VOA on/off C1 1-80 C
82 SMA C2 11 1 2 11 D1 C 1-80 D2 11 20 DOM 50-200 GHz 200 GHz DWDM
DU-String C - Band 80 REAM 2xCu DOM PIN CC 82 C-Band 1528-1568 nm
L-Band 1568-1610 nm 50 GHz 200 GHz C 1-80 .. 200 GHz C 1,580 + C 82
.. MOD + Drivers LiNbO3 1:4 C - Band 1:20 20 x 1 c @1.25 Gbps
(Downstream Data) 100 km 80 C @1.25 Gbps (Upstream Data) 80 C CW A2
A1 A3 Secondary Junction Box OTDR Timing mode Junction Box *R&D
on high density data readout. Explored as an option - Not used in
the project presently.
Slide 21
Continuous wave light (one of the 20 wavelengths separated at
200 GHz ) is separated from the slow control data. The slow control
data is detected by the photodiode and provided to the electronics.
The data from the sensors (effective data rate ~1.25 Gbps upstream)
modulates the CW light and is reflected. Aim is to integrate the
building blocks (AWG, Modulator and PD) on a single die. InP based
Colorless transceiver for KM3NeT TIPP 2014 DGB et al.214-06-2014
AWG Reflective Modulator 1 x 21 21 x 1 xx 11 PD DOM Electrical
Domain 20 1+x1+x x can be any of the 20 wavelengths REAM 2xCu DOM
PIN CC 82 will replace
Slide 22
InP based Colorless transceiver for KM3NeT TIPP 2014 DGB et
al.224-06-2014 Reflective circuit Test structures Transmissive
circuit AWG Reflective Modulator 1 x 21 xx 11 PD DOM Electrical
Domain 1+x1+x x can be any of the 20 wavelengths Reflective
Modulator SOA AWG Transmissive Modulator 1 x 21 xx 11 PD DOM
Electrical Domain 1+x1+x x can be any of the 20 wavelengths
Transmissive Modulator SOA MMI AWGs channel spacing is dependent
also on processing. With a loop back architecture, we remove the
process variations on the AWG. Transmissive architecture can be
used for testing purposes.
Slide 23
ASPICs for High Energy Physics Experiments TIPP 2014 DGB et
al.234-06-2014 Modulators form the heart of the external modulation
technique. Little is known about radiation hardness of (InP)
modulators. Ultimate goal : application at inner detectors at HL
LHC. InP Metal Data arm Databar arm Laser input Light output Mach
Zehnder (MZ) Modulator Optical modulator Continuous wave injection
laser Photo diode Amplification Digital read-out Chip Modulation
Detector High Radiation environment Low radiation Data acquisition
& processing CW Laser Data
Slide 24
Samples mounted in a shuttle that moves in and out of the 24
GeV/c proton beam at CERN to 1E12, 1E13, 1E14 and 1E15 p/cm2.
Vertex detectors at HL-LHC require a radiation hardness ~ 1E16
p/cm2. The sample contains 22 modulators and measures 14mm 4 mm
Beam Test of InP based MZ modulators TIPP 2014 DGB et
al.244-06-2014 Submount dimensions : 48 mm 42 mm
Slide 25
Measurements need precision alignment of chips and fibers.
Lensed fibers are used to couple and collect light. Alignment of
fibers are done manually using manipulators. Measurements of
photonic chips TIPP 2014 DGB et al.254-06-2014 Bond wire Lensed
fiber (9 u core) to be aligned to a 2 u wide 1u high
waveguide.
Slide 26
A Sample measurement TIPP 2014 DGB et al.264-06-2014 Input
power = + 6dBm @ 1550nm Y axis Power (dBm) measured at the output.
X axis Voltage scan on one of the arms of the modulator. InP Metal
Data arm Databar arm Laser input Light output Imbalance PD
Slide 27
WDM Modulator in the COBRA6 run TIPP 2014 DGB et al.274-06-2014
DC and RF electrical contacts WDM modulator MZ modulators SOA
Waveguide facet Test SOA Test Modulator Test AWG MZ (DE)MUX
SOA
Slide 28
Preliminary Measurement results TIPP 2014 DGB et al.284-06-2014
CS = 400 GHzFSR = 2400 GHz Crosstalk = 16 dB InP Metal TMm arm TMp
arm Laser input Light output Optical power meter (DE)MUX EDFA
Optical Spectrum Analyzer On Chip
Slide 29
Photonic Integration is in its nascent stages and holds a
bright future. Physics experiments can benefit from custom ASPICs.
Smaller, low power, more functionality, cheaper for large
quantities Generic Photonic Integration platform and access to MPW
runs makes it easier for designing ASPICs for High Energy Physics.
Lot to be designed and measured, long way to go Conclusions and
Future TIPP 2014 DGB et al.294-06-2014
Slide 30
Arrayed Waveguide Grating TIPP 2014 DGB et al.304-06-2014
Vellekoop, 4-channel demux, JLT, 1991
Slide 31
Moores law for InP based PICs TIPP 2014 DGB et al.314-06-2014
Herben, 4-channel 2x2 OXC, PTL, 1999
Slide 32
Moores law for InP based PICs TIPP 2014 DGB et
al.324-06-2014
Slide 33
Generic Integration Technology TIPP 2014 DGB et al.334-06-2014
SOA (gain sections) Shallow etched waveguide Deep etched waveguide
Electrical isolation section Phase modulator Waveguides are ~ 2um
wide and a um high Phase change is brought by applying an electric
field and changing the refractive index Minimum resolution in COBRA
process ~ 100 nm
Slide 34
Examples of Non-telecom Application Areas TIPP 2014 DGB et
al.344-06-2014 Optical Coherence Tomography Compact Frequency-comb
generators for metrology Readout units for fibre strain sensors
Skin Analysis
Slide 35
OPA02_02 Colorless transceiver TIPP 2014 DGB et al.354-06-2014
Integration of such (de-)multiplexers, modulators and photodiode in
a single die saves cost and area. Reflective and transmissive (for
test purposes) configurations included. Aimed as an alternative for
the REAM solution. Polarization dependence is a potential
problem.
Slide 36
Irradiated and Non-Irradiated Sample measurements TIPP 2014 DGB
et al.364-06-2014 Input power = + 6dBm @ 1550nm Y axis Power (dBm)
measured at the output. X axis Voltage scan on one of the arms of
the modulator. Attenuation at zero bias = 7 dB No phase behaviour!
InP Metal Data arm Databar arm Laser input Light output Imbalance
PD
Slide 37
Two main types of modulators Absorptive modulators Absorption
coefficient of the material in the modulator can be manipulated by
the Franz-Keldysh effect (bulk semiconductors), the
Quantum-confined Stark effect (InP QW, QDs), excitonic absorption,
changes of Fermi level, or changes of free carrier concentration
(bulk Si, InP). Refractive modulators. make use of an electro-optic
effect like Pockels effect (linear EO effect) (LiNbO 3, GaAs), Kerr
effect (quadratic EO effect) (Nitrobenzene) to change the
refractive index. Modulators TIPP 2014 DGB et al.374-06-2014
Slide 38
SP08-2-3 SMART Photonics Run TIPP 2014 DGB et al.384-06-2014
AWG Reflective Modulator 1 x 21 xx 11 PD DOM Electrical Domain
1+x1+x x can be any of the 20 wavelengths Reflective Modulator SOA
AWGs channel spacing is dependent also on processing. With a loop
back architecture, we remove the process variations on the
AWG.
Slide 39
SP08-2-3 SMART Photonics Run TIPP 2014 DGB et al.394-06-2014
AWG Transmissive Modulator 1 x 21 xx 11 PD DOM Electrical Domain
1+x1+x x can be any of the 20 wavelengths Transmissive Modulator
SOA MMI Transmissive architecture can be used for testing
purposes.
Slide 40
Custom PCBs: Mount and handle the non-packaged optical
circuits. Bias the circuits during irradiation to imitate the
operating conditions. Submount design TIPP 2014 DGB et
al.404-06-2014 PCB Backside of Al piece Peltier / TEC element Al
piece for heat dissipation
Slide 41
Packaging of Photonic chips - example TIPP 2014 DGB et
al.414-06-2014 Linkra packaging proposal of the TxRx chip
Slide 42
Commercial Operation TIPP 2014 DGB et al.424-06-2014 Cost of an
MPW: 50-100 k With 10 designs: 5-10 k per design For this money you
get ~20 chips Cost for your chips: