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FrAunhoFer iZm

The Fraunhoer-Geseshat is one o the eading organisations o aied researh in Euroe,

undertaking ontrat researh on beha o industry, the servie setor and the government.

It maintains more than 80 researh units in Germany, inuding 60 Fraunhoer Institutes. The

Fraunhoer-Geseshats key objetive is to transorm sienti exertise into aiations o

ratia utiity.

The Fraunhoer Institute or Reiabiity and Mirointegration IZM is a wordwide renowned

institute in the ream o akaging tehnoogies. We seiaize in transerring researh resuts

to industry and deveoing ustomer-sei soutions or miroeetroni and mirosystem

akaging and system integration.

FrAunhoFer iZm-ASSiD

Fraunhoer IZM has ong-term exeriene in waer eve akaging and system integration

tehnoogies, eseiay with reset to 3D integration. New waer eve roesses aredeveoed and new materias are evauated and imemented into a omete roess inte-

gration fow. Ugrading 3D waer eve tehnoogies to 300mm waer size is the next ste in

eetivey assisting eading omanies in meeting the erormane, untionaity and saing

requirements o their uture roduts. A Siion System Integration Dresden (ASSID)

has been estabished as art o the Fraunhoer IZM Berin to meet this sei haenge.

Our new enter has a state-o-the-art ean-room aiity and is equied with a omete

300 mm roess ine or TSV ormation, TSV ost-roessing on waer rontside and bak-

side, 3D devie staking assemby, as we as testing and aiure anaysis. A these ASSID

ativities are embedded into the overa Fraunhoer IZMs 3D system integration strategy.

ASSIDs aiities and know-how are eseiay taiored to artners in industry or researh

and deveoment rojets, as we as rototye reaization. We are aso estabishing a

network or advaned system integration tehnoogies together with other researh

institutes and universities.

FrAunhoFer iZm-ASSiD goAlS

Fraunhoer IZM-ASSIDs vision is the heterogeneous integration o dierent hi

untionaities into one akage by using enhaned 3D integration, assemby and

interonnetion tehnoogies.

Fraunhoer IZM-ASSID deveos eading edge tehnoogies or 3D system integration

on 200/300mm waer and rovides soutions or ustomized rodut integration.Fraunhoer IZM-ASSID oers equiment, materia and roess evauations or industria

artners.

Fraunhoer IZM-ASSID servies inude the ustomer-sei quaiation o roesses.

All Silicon SyStemintegrAtion DreSDen

ASSiD

l E A d I N g

E d g E M I c R O -

E l E c T R O N I c

p A c k A g I N g

A N d S y S T E M

I N T E g R A T I O N

H E T E R O -

g E N E O U S

w A F E R - l E v E l

S y S T E MI N T E g R A T I O N

3 0 0 M I l l I M E T E R

w A F E R - l E v E l

p R O c E S S l I N E


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3D

SyStem

integrAtion3D system integration is one o the most imortant strategi

key tehnoogies in miroeetroni akaging and system

integration throughout the word. In 3D waer eve system

integration, mutie devies suh as sensors, roessors,

memories, transeivers, an be integrated heterogeneousy.

The heterogeneous integration aroah aso has additiona

advantages over standard system integration in terms o ee-

tria erormane and orm ator. Thereore urrent sienti

and industria researh is ousing on deveoing tehnoogiesbased on this aroah, artiuary or manuaturing roess

integration.

Our main tehnooies inue:

3D waer-eve system integration (300 mm waer)

Through siion via tehnoogy

Siion interoser tehnoogy with high-density wiring

Waer thinning and handing tehnoogy

Temorary waer bonding and debonding tehnoogy

Waer buming tehnoogy

Die-to-waer and waer-to-waer bonding

Waer-eve assemby and 3D staking

roADmAp 3D WAFer-level SyStem integrAtion

3D

INTERcONNEcT

cOMp

lExITy

2 0 0 5 2 0 0 6 2 0 0 7 2 0 0 8 2 0 0 9 2 0 1 0 2 0 1 2 2 0 1 4

controller /memory StAckS

StAckeD memory ontSv interpoSer

3D imAge SenSor

hDi tSv interpoSer

3D interpoSerWith cooling

FunctionAl

lAyereD StAck

grAin

3D cpus

hetero

integrAtion

3D tci / tSv

Wlp With tmv

Wlp

Wlp With tSv

Logic

Organic Interposer

CIS DRAM

ipD & rDl

Fraunhoer IZM 8-2009


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through

Silicon viA (tSv)

FormAtionThrough siion vias (TSVs) are a key eement in 3D waer-eve

system integration. Fraunhoer IZM-ASSID deveos oer

TSV roesses seiay or ustomized aiations. A

roesses are arried out using state-o-the-art industria

equiment or 300 mm waers.

In TSv tehnoo our fous is on:

High-density TSV tehnoogy or advaned system eror-

mane (TSV diameter: 2 20 m; aset ratio: 5 to 30)TSV ost-rontend and ost-bakend integration roesses

cu-TSV ing using high-seed EcD

Otimized and quaied TSV ost-roesses aied on

waer rontside and bakside

Evauation and vaidation o new materias or TSV ing

and isoation

Otimized and quaied TSV ost-roesses aied on

waer rontside and bakside

Quaied high-yied TSV ormation roesses

WAFer thinning,

AnD thin WAFer

hAnDlingWaer thinning and handing tehnoogies are essentia or

the reaization o 3D system arhitetures. Otimizing these

tehnoogies to meet sei requirements in waer rontside

and bakside roessing in 3D waer eve system integration

remains omex. The inrease o the waer size to 300 mm

oses additiona haenges.

In roess eeoment our fous is on:

Otimization o temorary waer-bonding and -debonding

tehnoogies (devie waer thikness: < 20 m; mutie

reeat bonding and debonding roesses)

Enhaned waer thinning and stress reie tehnoogies or

utra-thin waers (< 20 m)

Enhaned diing tehnoogies using ow k-materias, sma

diing streets (< 40 m) and redued mehania edge and

orner damage to waer rontside and bakside


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interpoSerS With

high-DenSity

metAlliZAtionThrough siion interosers are used as arriers or 3D arhi-

tetures eseiay to meet the requirements o integrated

iruits high I / O numbers and their high-density routing to

the akage or board. The tehnia requirements are dened

by aiation-oriented system seiation. Aording to

the ITRS and SEMATEcH roadmas, mutiayer high-density

wiring on bakside/ rontside down to 2 m ine / sae, as

we as cu-TSVs with diameters between 2 m and 20 m are

required. The untionaity o siion interosers wi be exten-ded by the integration o assive devies, suh as indutors,

resistors and aaitors, with an emhasis on aiitating the

deveoment o RF aiations. Future generations o siion

interosers wi aso inude integrated ative devies and wi

be designed or high ower dissiation by means o innovative

ooing arhitetures. We are aso working on the integration

o eetria otia interonnets. These new tyes o siion

interosers are the basi rerequisite or moduarized 3D

staked arhiteture or uy heterogeneous integration on

waer eve.

In interoser tehnooies our fous is on:

Interosers with high-density cu-TSV

High-density mutiayer oer wiring (min. 2 m ine / sae)

Integration o assive devies (R, l, c) into the RDl

Embedding o ative and assive devies into the siion

interoser

comatibe interonnets or 3D staking o siion devies

and or assemby into the akage or on the board

Integration o ooing eements and otia interaes

ASSembly AnD

interconnection

technologieSAssemby and interonnetion tehnoogies reevant or 3D

system integration are strongy aeted by the Ic tehnoogies

used in dierent roduts. Key arameters inude die size,

number o I/Os, ad geometries, termina ad methodoogy

and assivation ayers, waer-surae tooogies and imi-

tations to the therma budgets that an be aied during

assemby. Additiona haenges in assemby and interonnet

tehnoogies or 3D systems inude aignment auray, yied

requirements and rodutivity that meet the demands o osteetive manuaturing.

In assemb an interonnetion tehnoo

our fous is on:

Evauation o die-to-waer (D2W) and waer-to-waer (W2W)

assemby tehnoogies

3D Ic assemby with high-density interonnets (> 1000 I / O)

and utra-ne ith (< 50 m)

3D Ic assemby with thin and utra-thin his (20 150 m)

3D Ic assemby on thin interosers mounted on arrier

substrates (D2W)

Evauation o 3D ow-temerature assemby tehnoogies

Evauation o fux-ree soder onnetions with se-

aignment aabiity in 3D system integration

Quaied 3D stak assemby roesses


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contAct

Fraunhofer IZM

prof. dr.-In. dr.-In. E. h. Herbert Reih

Gustav-Meyer-Aee 25

13355 Berin

phone: +49 (0)30 46403 100

Fax: +49 (0)30 46403 111

E-Mai: [email protected]

URl: htt://www.izm.raunhoer.de

Aress

Fraunhoer IZM-ASSID

Ringstr. 12

01468 MoritzburgGermany

Manaement an coorination

M. Jueren wof

phone: +49 30 46403 606

E-mai: [email protected]

TSv & laer deosition

dr. Mathias Boetther

phone: +49 0351 6563774


wafer Thinnin, Hanin, Assemb

dr. Jueren grafe

phone: +49 351 4388 4219


conet & Editing: Fraunhoer IZM press and pubi Reations, Berin + M.creutzedt / Mcc Berin Design:

J. Metze / Ateier :50 Berin photograhy: Fraunhoer IZM together with: Bernd Mer (. 2 to), a other

Fraunhoer IZM ASSID 09/10-01e

ServiceS

Aart rom advaned akaging researh and deveoment,

Fraunhoer IZM-ASSID aso rovides rototying servies. Its

aiities are oen to industry, institutes and universities or

researh and deveoment ativities, as we as materia,

equiment and roess evauation and imrovement.

Tehnoogia servies inude:

TSV siion interoser

Deosition and atterning o dieetri oymers and

meta ms

Redistribution ayers (ine / sae: 10 / 10 m) with ustomer-

sei termina ad metaurgies (cu, cu / Ni / Au, cu / Sn)

Waer thinning and thin waer roessing

Waer-eve buming (pb-ree)

Waer-eve soder ba attah (100 500 m)

Waer-eve assemby

Die attah (amination, eoxy, fi hi) on various substrates

comonent assemby (bare die, ative and assive SMD

omonents)

customer-sei rototying

Documents

Assid09 Web