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31stRD50Workshop(CERN)–20-22/11/2017
Bandgapenergymodelisa0oninSilvacoTCADAtlasDevicesimulator
M.BombenLPNHE&UPD,Paris-France
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 1
Outline• BandgapnarrowinginSilvaco
• Reverse/forwardcurrentlevelvsbandgapandtemperature
• SimulaNonofradiaNondamageandimpactofbandgapandtemperature– Reversebias:depleNonvoltageandleakagecurrent– Forwardbias:forwardcurrent
• ConclusionsandOutlook
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 2
BANDGAPNARROWINGINSILVACO
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 3
BandgapnarrowinginSilvaco
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 4
Bandgapnarrowing:howitlookslike
1710 1810 1910 2010]-3 [cmtotN
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
1.12
[eV]
gE
Slotboom
Calculatedfrompreviousformula
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 5
Bandgapnarrowing:howitlookslike
1710 1810 1910 2010]-3 [cmtotN
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
1.12
[eV]
gE
Slotboom
CourtesyofMichaelMoll
Sentaurus
Notsizeabledifference
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 6
Teststructure:effecNvedopingconcentraNon
Bulk~5e16/cm3
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 7
Teststructure:bandgapenergyinsimulaNon
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 8
Teststructure:bandgapenergyinsimulaNon
Nohiddenadjustmentshere:itiswhatiscalculatedaccordingtotheformulas
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 9
TemperaturedependenceofEg• BothSilvacoAtlasandSynopsysSentaurususethesame
parameterizaNonforEg(T)*:
• Theverywellknowndifferencebetweenthetwoisthat:– Eg(300K)=1.08eVinSilvacoAtlas– Eg(0K)=1.1696eVinSynopsysSentaurus(óEg(300K)~1.12eV)
*S.M.Sze,Physicsofsemiconductordevices.JohnWiley&Sons,1981
*
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 10
HowdoEgchangewithtemperature?
250 260 270 280 290 300 310 320 330 340T [K]
1.06
1.07
1.08
1.09
1.1 [eV]
gE
C) = 1.102 eV° (-20 gE
C) = 1.093 eV° ( 0 gE
C) = 1.083 eV° (+20 gE
C) = 1.102 eV° (-20 gE
C) = 1.093 eV° ( 0 gE
C) = 1.083 eV° (+20 gE
Eg(0K)=1.124eV
Eg(300K)=1.08eV
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 11
SILVACOTCAD
Reminder:why1.08eV?
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 12
IntrinsicconcentraNonvstemperature
250 260 270 280 290 300T [K]
2
4
6
8
10
12
14
910×]-3
[cm
in / ndf 2χ 1.424e+14 / 8
Norm 5.314e+17± 4.718e+19 n 0± 2
[eV] aE 0.0005748± 1.132
/ ndf 2χ 1.424e+14 / 8Norm 5.314e+17± 4.718e+19 n 0± 2
[eV] aE 0.0005748± 1.132
ni(293.15K)=8.29x109cm-3ni(300K)=1.45x1010cm-3Egfixedat1.08eV
Consistentwithliterature
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 13
N.B.!Moreonthislater
IntrinsicconcentraNonvsbandgap
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 14
1.08 1.09 1.1 1.11 1.12 1.13EG300 [eV]
3000
4000
5000
6000
7000
8000
610×]3 [1
/cm
in / ndf 2χ 0.003659 / 4
] 3Norm [1/cm 0± 8.29e+09 Mult. Fact. 0.01204± 0.4999 Th. En. [eV] 0± 0.02526
[eV] gE 0.0007262± 1.08
/ ndf 2χ 0.003659 / 4] 3Norm [1/cm 0± 8.29e+09
Mult. Fact. 0.01204± 0.4999 Th. En. [eV] 0± 0.02526
[eV] gE 0.0007262± 1.08
Fit Function:
)Th. En.
)g
(Mult. Fact).(x-Eexp(-×Norm
C°T = 20 TCAD sim.fit
~-Eg/2kT=>OK!
BandgapnarrowinginSilvaco:summary• BandgapnarrowingasafuncNonofdopingworksasexpected
• Bandgapnarrowingwithtemperatureworksasexpected
• IntrinsicconcentraNonscalingwithtemperatureworksasexpected
• Andvalueat293.15KisinagreementwithliteraturewhenEg(300K)=1.08eVisused
• IntrinsicconcentraNonscalingwithbandgapworksasexpected
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 15
REVERSECURRENTLEVELVSBANDGAP
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 16
Structure
200µmthick50µmwide
n+implantbulkconcentraNon
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 17
ReverseleakagecurrentvsEgandcarr.vel.
[V]biasV500− 400− 300− 200− 100− 0
[A/c
m]
leak
J
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.212−10×
defaultEG112Syn. Th. Vel.EG112 & Syn. Th. Vel.NO BGN
Eg=1.08eV
Eg=1.12eV
TheonlyrelevantparameterhereisEg
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 18
SimulatedleakagecurrentvspredicNon
PredictedI=qniAw/2/τg~1.6x10-13A
ni(293.15K)=8.29x109cm-3 τg~4x10-5sAw=1e-8cm3
SimulatedI~1.65x10-13A
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 19
èEverythingisconsistent
LeakagecurrentvsTemperature,Φ=0
]-11/T [K
I [A/
cm]
14−10
13−10
/ ndf 2χ 1.573 / 7Prob 0.9797
ref1.0/T 0± 0.003411 n 0± 2
aE 0.0003565± 1.13 refI 17− 9.064e±13 − 1.654e
/ ndf 2χ 1.573 / 7Prob 0.9797
ref1.0/T 0± 0.003411 n 0± 2
aE 0.0003565± 1.13 refI 17− 9.064e±13 − 1.654e
]-11/T [K
I [A/
cm]
14−10
13−10
/ ndf 2χ 1.52 / 6Prob 0.9581
ref1.0/T 0± 0.003411 n 0.3528± 1.919
aE 0.01666± 1.134 refI 16− 1.16e±13 − 1.654e
/ ndf 2χ 1.52 / 6Prob 0.9581
ref1.0/T 0± 0.003411 n 0.3528± 1.919
aE 0.01666± 1.134 refI 16− 1.16e±13 − 1.654e
Ivs1/TIevaluatedatVdepl+50V(VdepldoesnotdependfromT)
nfreetofloat
nfixedto2
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 20
LeakagecurrentvsTemperature,Φ=0
]-11/T [K
I [A/
cm]
14−10
13−10
/ ndf 2χ 1.573 / 7Prob 0.9797
ref1.0/T 0± 0.003411 n 0± 2
aE 0.0003565± 1.13 refI 17− 9.064e±13 − 1.654e
/ ndf 2χ 1.573 / 7Prob 0.9797
ref1.0/T 0± 0.003411 n 0± 2
aE 0.0003565± 1.13 refI 17− 9.064e±13 − 1.654e
]-11/T [K
I [A/
cm]
14−10
13−10
/ ndf 2χ 1.52 / 6Prob 0.9581
ref1.0/T 0± 0.003411 n 0.3528± 1.919
aE 0.01666± 1.134 refI 16− 1.16e±13 − 1.654e
/ ndf 2χ 1.52 / 6Prob 0.9581
ref1.0/T 0± 0.003411 n 0.3528± 1.919
aE 0.01666± 1.134 refI 16− 1.16e±13 − 1.654e
Ivs1/TIevaluatedatVdepl+50V(VdepldoesnotdependfromT)
nfreetofloat
nfixedto2
Ea~1.13eVn~2
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 21
EavsEg(300K)–Φ=0
(300) [eV]SilgE
1.08 1.085 1.09 1.095 1.1 1.105 1.11 1.115 1.12
[eV]
aE
1.13
1.135
1.14
1.145
1.15
1.155
1.16
1.165
1.17
TCAD Simulation
Linear fit
Ea=Eg(300)+0.05eV
Empiricalrule:
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 22
SILVACOTCAD
(Reversecurrent@-20Cscaledto20C)/I(20C)
[V]biasV500− 400− 300− 200− 100− 0
/I(29
3.15
K)
scal
edI
0.88
0.9
0.92
0.94
0.96
0.98
1
1.02
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 23
±2%
RaNoofReversecurrentsscaledto20C
T [K]250 255 260 265 270 275 280 285 290
/I(29
3.15
K)
scal
edI
0.99
0.995
1
1.005
1.01
1.015
1.02
TCAD Simulation
Linear fit
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 24
1%theaccuracyonaverageoftherescaling
Slopeconsistentwith1Interceptconsistentwith0
ForwardcurrentbeforeirradiaNon
Bias Voltage [V]0 0.2 0.4 0.6 0.8 1
Curre
nt [A
/cm
]
0
0.02
0.04
0.06
0.08
0.1
0.123−10×
C°n-on-p diode, Forward current, t = 20
= 1.08 eVgE = 1.09 eVgE = 1.10 eVgE = 1.11 eVgE = 1.12 eVgE = 1.13 eVgE
Asexpected,largerbandgap=>lesscurrent
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 25
Forwardcurrent/I(1.08eV)beforeirradiaNon
EG300 [eV]1.09 1.1 1.11 1.12 1.13
I(EG
300)
/I(1.
08 e
V) @
293
.15
K
0.2
0.3
0.4
0.5
0.6
0.7
/ ndf 2χ 4.42 / 3Norm 1.655± 1.041
[eV] gE 0.04008± 1.081
/ ndf 2χ 4.42 / 3Norm 1.655± 1.041
[eV] gE 0.04008± 1.081 V=0.2Vt=20C
=Norm*exp(-EG300-Eg/kT)
Itscales,asexpected,withni2~exp(-Eg)
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 26
Reverse/forwardcurrentlevelvsbandgap:Summary• ReversecurrentscaleswiththeexpectedfuncNonalform
• TheacNvaNonenergytobeusedisEa=EG300+0.05eV
• Rescalingofleakagecurrentworksat1%level
• Forwardcurrentscalesasexpectedwithexp(-Eg/kT)
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 27
SIMULATIONOFRADIATIONDAMAGEANDIMPACTOFBANDGAPM.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 28
RadiaNondamagemodelconsidered
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 29
EffectsofInterfaceDonorTrapStatesonIsolaNonProperNesofDetectorsOperaNngatHigh-LuminosityLHCF.Moscatellietal.IEEETRANSACTIONSONNUCLEARSCIENCE,VOL.64,NO.8,AUGUST2017“Perugia2017”inthefollowing
Reminder:inmypresentaNoninTorino*IhaveshowedthatgoodagreementbetweensimulatorsisfoundwhenEG300=1.08eVischosenandthethermalvelociNesarecorrectedàlaSynopsys*Bomben,28thRD50WS,Torino,June2016
Perugia2017,Φ=1x1015neq/cm2
0.0034 0.0035 0.0036 0.0037 0.0038 0.0039 0.004
]-11/T [K
11−10
10−10
I [A/
cm] / ndf 2χ 6.478 / 7
Prob 0.4851 ref1.0/T 0± 0.003411
n 0± 2 aE 0.001179± 1.418 refI 13− 8.242e±10 − 4.232e
/ ndf 2χ 6.478 / 7Prob 0.4851
ref1.0/T 0± 0.003411 n 0± 2
aE 0.001179± 1.418 refI 13− 8.242e±10 − 4.232e
BeforeirradiaNonitwas1.13eV
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 30
α(20C)~4.2e-17A/cm
1. NormalisaNoniscorrect2. Scalingasexpected
ReweighNngleakagecurrentwithEa=1.48eV
250 255 260 265 270 275 280 285 290T [K]
0.995
1
1.005
1.01
1.015
Lea
kage
Cur
rent
Rat
io
ReweighNngisaccuratewithin1.5%
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 31
<I(rew
eightedat20C)/I(2
0C)>
Perugia2017,Φ=3x1015neq/cm2
0.0034 0.0035 0.0036 0.0037 0.0038 0.0039 0.004
]-11/T [K
10−10
9−10I [
A/cm
] / ndf 2χ 14.56 / 7Prob 0.04208
ref1.0/T 0± 0.003411 n 0± 2
aE 0.000457± 1.411 refI 12− 1.021e±09 − 1.237e
/ ndf 2χ 14.56 / 7Prob 0.04208
ref1.0/T 0± 0.003411 n 0± 2
aE 0.000457± 1.411 refI 12− 1.021e±09 − 1.237e
At1e15itwas1.418eV
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 32
α(20C)~4.1e-17A/cm
1. NormalisaNoniscorrect2. Scalingasexpected
Extra:depleNonvoltagevstemperature
250 255 260 265 270 275 280 285 290 295T [K]
140
160
180
200
220
240 [V]
depl
V
- Perugia 20171510× = 1Φ
TCAD sim.fit
- Perugia 20171510× = 1Φ
TCAD sim.fit
- Perugia 20171510× = 1Φ
TCAD sim.fitpol2
Eg=1.08eV
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 33
Extra:depleNonvoltagevstemperature
250 255 260 265 270 275 280 285 290 295T [K]
140
160
180
200
220
240 [V]
depl
V
- Perugia 20171510× = 1Φ
TCAD sim.fit
- Perugia 20171510× = 1Φ
TCAD sim.fit
- Perugia 20171510× = 1Φ
TCAD sim.fitpol2
Eg=1.08eV
SimpleTaylorexpansion
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 34
Rather“faraway”fromEi
Extra:depleNonvoltagevstemperature
250 255 260 265 270 275 280 285 290 295T [K]
200
250
300
350
400
450
500
550
600
650 [V
]de
pl V - Perugia 20171510× = 3Φ
TCAD sim.pol2
Eg=1.08eV
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 35
Itworksatlargerfluencesaswell
DepleNonvoltagevsEG300
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 36
0 50 100 150 200 250 300 [V]biasV
0200400600800
10001200140016001800
3010×]-2
[F-2 C
= 1.08 eVgE = 1.09 eVgE = 1.10 eVgE = 1.11 eVgE = 1.12 eVgE = 1.13 eVgE
t=20CPerugia2017Φ=1e15neq/cm2
Largerbandgapvalues
SmallerdepleNonvoltage
DepleNonvoltagevsbandgap
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 37
1.08 1.09 1.1 1.11 1.12 1.13EG300 [eV]
120
140
160
180
200
220 [V]
depl
V
/ ndf 2χ 7.539 / 3Norm [V] 170.8± 212.5 Mult. Fact. 0.00845± 0.3093 Th. En. [eV] 0± 0.02526
[eV] gE 0.06563± 1.081
/ ndf 2χ 7.539 / 3Norm [V] 170.8± 212.5 Mult. Fact. 0.00845± 0.3093 Th. En. [eV] 0± 0.02526
[eV] gE 0.06563± 1.081
Fit Function:
)Th. En.
)g
(Mult. Fact).(x-Eexp(-×Norm
- Perugia 20171510× = 1Φ
TCAD sim.
fit
t=20C
• ~-Eg/3kT(?)• pol2givesbezeragreement(notshownhere)
Leakagecurrentvsbandgap
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 38
1.08 1.09 1.1 1.11 1.12 1.13EG300 [eV]
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.459−10×
[A]
leak
I / ndf 2χ 0.02563 / 4
Norm. [A] 0±10 − 4.231e [eV] gE 0.0007232± 1.08
Mult. Fact. 0.02365± 0.9862
/ ndf 2χ 0.02563 / 4Norm. [A] 0±10 − 4.231e
[eV] gE 0.0007232± 1.08 Mult. Fact. 0.02365± 0.9862
t=20C
~-Eg/kT
Forwardcurrenta{erirradiaNon
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 [V]biasV
0
0.05
0.1
0.15
0.2
0.259−10×
Curre
nt [A
]
EG300 = 1.08 eVEG300 = 1.09 eVEG300 = 1.10 eVEG300 = 1.11 eVEG300 = 1.12 eVEG300 = 1.13 eV
t=20CPerugia2017Φ=1e15neq/cm2
It’saresistor...
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 39
Forwardcurrenta{erirradiaNon
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 [V]biasV
0
0.05
0.1
0.15
0.2
0.259−10×
Curre
nt [A
]
EG300 = 1.08 eVEG300 = 1.09 eVEG300 = 1.10 eVEG300 = 1.11 eVEG300 = 1.12 eVEG300 = 1.13 eV
t=20CPerugia2017Φ=1e15neq/cm2
It’saresistor...
ρ~2x105Ωcm=>veryclosetointrinsicmaterial
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 40
Expected;e.g.:G.Lutz,NIMA377(1996)234-243
Forwardcurrenta{erirradiaNonvstemperature
0.0034 0.0035 0.0036 0.0037 0.0038 0.00391/T [1/K]
12−10
11−10Curre
nt [a
.u.]
= 1.08 eVgE = 1.09 eVgE = 1.10 eVgE = 1.11 eVgE = 1.12 eVgE = 1.13 eVgE
V=0.2VPerugia2017Φ=1e15neq/cm2
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 41
Forwardcurrenta{erirradiaNon,Eg=1.08EeV
0.0034 0.0035 0.0036 0.0037 0.0038 0.0039 0.0041/T [1/K]
12−10
11−10
I(1.
08 e
V) @
0.2
V / ndf 2χ 8.312 / 7
Norm 0.0004225± 0.003821 [eV] aE 0.002437± 0.446
/ ndf 2χ 8.312 / 7Norm 0.0004225± 0.003821
[eV] aE 0.002437± 0.446
Eg=1.08eVV=0.2VPerugia2017Φ=1e15neq/cm2
AsimpleexponenNalisthebestapproximaNon
~exp(-Ea/kT)
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 42
SimulaNonofradiaNondamageandimpactofbandgap:Summary• ReversecurrentsNllscaleswiththesamefuncNonalform
• AcNvaNonenergyratherdifferent(1.48eV)=>Modeldependent?– Tobecheckedwithothermodels
• DepleNonvoltagedependenceon(T,Eg)“small”onrangestested– DuetoposiNonoftrapswrtintrinsiceenergy– Tobecheckedwithothermodels
• Forwardcurrentscalesasexpectedwithbandgapandenergy
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 43
CONCLUSIONSANDOUTLOOK
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 44
ConclusionsandOutlook• Despitethelowdefaultbandgapvalueat300KpredicNonsseemtobe
consistentinSilvacoAtlasdevicesimulator• ReversecurrentscalesasexpectedwhenthecorrectacNvaNonenergy
isused• Forwardcurrentscalesasexpected• A{erirradiaNonthingsgetsmorecomplicated• YetthecurrentscaleswithtemperaturewiththesamefuncNonalform• Morefluences/modelstobeinvesNgated• Extra:predicteddepleNonvoltagevstemperatureneedsmore
invesNgaNon(incontactwithPerugiagroup)• Outlook:thesituaNonismoreclear;possibletomakerobustpredicNons• SilvacousedandtobeusedforATLASdigiNzer• CollaboraNonwithMPItoo;seenexttalkM.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 45
Acknowledgements• MichaelforsuggesNngstudiestofurtherunderstand“what’sgoingon”• Rogelio,PerugiaandMPIgroupforgivingSilvacoachance• LucianoBosisio(Uni.ofTrieste)forgreatdiscussions
• LPNHEgroupforsupporNngme
• Mygirlfriend(abiologist)forlisteningtomewhilege�ngmadatEG300defaultvalue
• and...
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 46
THANKYOUFORYOURATTENTION
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 47
Backup
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 48
Reminder• ItwaspointedoutthatSilvacothermalvelociNesvaluesaredifferent
fromsSynopsysones
There’safactorx2forSynopsysonelectronsthermalvelociNeswrttoholes
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 49
Forwardcurrenta{erirradiaNon,Eg=1.08EeV
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 [V]biasV
0
0.05
0.1
0.15
0.2
0.259−10×
Curre
nt [A
]
t = -20 Ct = -10 Ct = 0 Ct = 10 Ct = 20 C
Eg=1.08eVPerugia2017Φ=1e15neq/cm2
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 50
Perugia2017,Φ=1x1015neq/cm2–nfreepar.
0.0034 0.0035 0.0036 0.0037 0.0038 0.0039 0.004
]-11/T [K
11−10
10−10
I [A/
cm] / ndf 2χ 0.04 / 6
Prob 1 ref1.0/T 0± 0.003411
n 1.218± 5.057 aE 0.05731± 1.274 refI 12− 1.09e±10 − 4.25e
/ ndf 2χ 0.04 / 6Prob 1
ref1.0/T 0± 0.003411 n 1.218± 5.057
aE 0.05731± 1.274 refI 12− 1.09e±10 − 4.25e
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 51
Perugia2017,Φ=3x1015neq/cm2–nfreepar.
0.0034 0.0035 0.0036 0.0037 0.0038 0.0039 0.004
]-11/T [K
10−10
9−10I [
A/cm
] / ndf 2χ 0.3555 / 6Prob 0.9992
ref1.0/T 0± 0.003411 n 0.4646± 3.773
aE 0.02175± 1.328 refI 12− 1.474e±09 − 1.241e
/ ndf 2χ 0.3555 / 6Prob 0.9992
ref1.0/T 0± 0.003411 n 0.4646± 3.773
aE 0.02175± 1.328 refI 12− 1.474e±09 − 1.241e
M.Bomben-BandgapenergymodelisaNoninSilvacoTCADAtlasDevicesimulator-31stRD50WS,CERN 52