Basics of Analog Electronics · 2020. 9. 23. · Zainab Haseeb PhD Scholor and Guest Faculty, Department of Electronics and Communication Engineering, Jamia Millia Islamia (A Central

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CHBasics of Analog Electronics

Dr. Dinesh Prasad

Professor,Department of Electronics and Communication Engineering,

Jamia Millia Islamia (A Central University)New Delhi

Mohd. Asharf

Assistant Professor,Department of Electronics and Communication Engineering,


Zainab Haseeb

PhD Scholor and Guest Faculty,Department of Electronics and Communication Engineering,


SCITECH PUBLICATIONS (INDIA) PVT. LTD.www.scitechpublications.com

ISBN: 978-93-85983-61-0

www.scitechpublications.com

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CHCopyright 2018 Scitech Publications (India) Pvt. Ltd.

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978 93 85983 61 0

Published by M. R. Purushothaman for Scitech Publications (India) Pvt. Ltd., Old No: 3, NewNo: 5, Bakthavachalam Street, Tambaram West, Chennai - 600 045. Printed at ProfessionalPrinters, Chennai - 600 014.

ISBN: 978-93-85983-61-0


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CHPreface

This book deals with analog electronics covering the major portion of basic of electronics,which is the prerequisite of any undergraduate student in the field of electronics.

Analog electronics refers to that branch of electronics which deals with continuously varyingsignal. We all are well aware of the fact that everything in its natural form is analog in nature.

There are vast numbers of analog circuit available and thanks to the application of each ofthem which make them different from each other and possess certain specialty.

The book contains six chapters starting from very basic of semiconductor and diodes, as thesemiconductor industry and IC fabrication has revolutionized whole electronics world. Secondchapter will deal with application of diode as bipolar junction transistor, and thereby dealing withfurther transistor we will more towards field effect transistor in the third chapter. To increase thefurther applicability of electronic circuit, we will study how to carry out sustained oscillation andproviding feedback to enhance the performance in chapter fourth. In the fifth chapter we will studyvery basic active device that is operational amplifier and its applications. Last chapter deals withbasic communication engineering.

I hope this book will help the students to get the thorough knowledge of electronics.

August, 2018 Dr. Dinesh Prasad

Mohd. Ashraf

Zainab Haseeb

ISBN: 978-93-85983-61-0


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CHContents

Chapter 1 Semiconductor Diodes and Its Applications 1.1 - 1.46

1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1

1.2 Electron-volt (eV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2

1.3 Thermal Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3

1.3.1 Types of temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3

1.4 Electric Field Intensity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3

1.5 Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4

1.6 Drift Velocity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4

1.7 Drift Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4

1.8 Drift Current Density . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4

1.9 Diffusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4

1.10 Diffusion Current Density . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5

1.11 Leakage Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5

1.12 Basic Classification of Metal Semiconductors and Insulator . . . . . . . . . . . . 1.5

1.12.1 Insulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6

1.12.2 Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6

1.12.3 Metal (Conductor) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6

1.13 Fermi- Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7

1.14 Intrinsic Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8

1.14.1 Current in intrinsic semi conductor . . . . . . . . . . . . . . . . . . . . . 1.8

1.14.2 Conductivity of intrinsic semi conductor . . . . . . . . . . . . . . . . . . 1.8

1.14.3 Intrinsic resistivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8

1.15 Extrinsic Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9

1.15.1 Doping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9

1.15.2 Dopants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9

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CH1.16 Classification of Semiconductor Based on Doping Types . . . . . . . . . . . . . 1.10

1.16.1 N-type semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.10

1.16.2 P-type semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.10

1.17 Classification of Semi Conductor on the Basis of Band Gap . . . . . . . . . . . . 1.11

1.18 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.13

1.18.1 PN junction diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.13

1.18.2 Equation for the width of the depletion layer . . . . . . . . . . . . . . . 1.14

1.18.3 The width of depletion layer depends on . . . . . . . . . . . . . . . . . . 1.14

1.18.4 Equation of contact potential in open circuited diode . . . . . . . . . . . 1.14

1.18.5 Cut-in voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15

1.18.6 Forward bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15

1.18.7 Reverse bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15

1.19 Half Wave Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.16

1.19.1 Analysis of half wave rectifier . . . . . . . . . . . . . . . . . . . . . . . 1.18

1.20 Full Wave Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.24

1.20.1 Analysis of full wave rectifier . . . . . . . . . . . . . . . . . . . . . . . 1.25

1.21 Bridge Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.31

1.21.1 Analysis of full wave bridge rectifier . . . . . . . . . . . . . . . . . . . . 1.32

1.22 Zener Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33

1.22.1 V-I characteristic of zener diode . . . . . . . . . . . . . . . . . . . . . . 1.33

1.22.2 Characteristic of ideal zener diode . . . . . . . . . . . . . . . . . . . . . 1.34

1.22.3 Dynamic resistance of zener diode . . . . . . . . . . . . . . . . . . . . . 1.35

1.23 Voltage Regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.35

1.23.1 Zener diode shunt regulator . . . . . . . . . . . . . . . . . . . . . . . . 1.35

1.24 Clipper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.37

1.24.1 Shunt clipper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.38

1.24.2 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.38

1.25 Clamper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.38

1.25.1 Negative clamper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39

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CH1.25.2 Positive clamper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.40

1.26 Linear Graded Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43

1.27 Varactor Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43

1.28 Light Emitting Diode (LED) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43

Review Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.44

Objective Questions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.45

Chapter 2 Bipolar Junction Transistors 2.1 - 2.30

2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1

2.2 Construction and Working . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2

2.2.1 Basic working of NPN transistor . . . . . . . . . . . . . . . . . . . . . . 2.3

2.3 Mode (Region) of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4

2.4 BJT Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5

2.4.1 Common base configuration . . . . . . . . . . . . . . . . . . . . . . . . 2.5

2.4.2 Common emitter configuration . . . . . . . . . . . . . . . . . . . . . . . 2.7

2.4.3 Common collector configuration . . . . . . . . . . . . . . . . . . . . . . 2.10

2.5 BJT Biasing Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.11

2.5.1 The DC operating point . . . . . . . . . . . . . . . . . . . . . . . . . . 2.11

2.5.2 Load line (Graphical method) . . . . . . . . . . . . . . . . . . . . . . . 2.12

2.6 Biasing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.12

2.6.1 Fixed bias or base bias . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.12

2.6.2 Collector-feedback bias . . . . . . . . . . . . . . . . . . . . . . . . . . 2.13

2.6.3 Emitter bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.14

2.6.4 Voltage-divider bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.16

2.7 BJT Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.21

2.7.1 Hybrid model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.21

Exercise Problems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.26


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CHChapter 3 Field Effect Transistor 3.1 - 3.19

3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1

3.2 Types of Field Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1

3.3 Junction Field Effect Transistor (JFET) . . . . . . . . . . . . . . . . . . . . . . 3.2

3.4 Principle and Working of JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3

3.5 Difference between JFET and Bipolar Transistor . . . . . . . . . . . . . . . . . 3.4

3.6 Output Characteristics of JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.4

3.7 Transfer Characteristics of JFET . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6

3.8 Advantages of JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7

3.9 Disadvantages of JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7

3.10 Parameters of JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7

3.11 Relation Among JFET Parameters . . . . . . . . . . . . . . . . . . . . . . . . . 3.8

3.12 Transconductance (gm or g f s) of JFET . . . . . . . . . . . . . . . . . . . . . . . 3.8

3.13 Metal Oxide Semiconductor FET (MOSFET) . . . . . . . . . . . . . . . . . . . 3.9

3.14 Types of MOSFETS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9

3.15 Depletion Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.10

3.16 Enhancement Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.13


Chapter 4 Feedback Amplifier and Oscillators 4.1 - 4.28

4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1

4.2 Positive Feedback (Regenerative Feedback) . . . . . . . . . . . . . . . . . . . . 4.2

4.3 Negative Feedback (Degenerative Feedback) . . . . . . . . . . . . . . . . . . . . 4.2

4.4 Advantages of Negative Feedback . . . . . . . . . . . . . . . . . . . . . . . . . 4.2

4.5 Feedback Amplifier Concept . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3

4.6 Mixing Network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.3

4.7 Basic Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.4

4.8 Feedback Network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.4

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CH4.9 Sampling Network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5

4.10 Classification of the Feedback Amplifier on the bases of Sampling Network andMixing Network . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5

4.10.1 Voltage series feedback amplifier . . . . . . . . . . . . . . . . . . . . . 4.5

4.10.2 Voltage-shunt feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.6

4.10.3 Current-series feedback . . . . . . . . . . . . . . . . . . . . . . . . . . 4.7

4.10.4 Current - shunt feedback . . . . . . . . . . . . . . . . . . . . . . . . . . 4.7

4.11 Properties of Negative Feedback Amplifier . . . . . . . . . . . . . . . . . . . . . 4.8

4.11.1 Gain Stabilization: Gain stabilization is given by . . . . . . . . . . . . . 4.8

4.11.2 Effect on bandwidth . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9

4.11.3 Effect on noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9

4.11.4 Effect on distortion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.10

4.11.5 Effect on stability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.10

4.12 Introduction to Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.13

4.12.1 Principle of operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.13

4.12.2 Barkhausen criteria . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.14

4.13 RC Phase Shift Oscillator using Op-Amp . . . . . . . . . . . . . . . . . . . . . 4.15

4.14 RC Phase Shift Oscillator using BJT . . . . . . . . . . . . . . . . . . . . . . . . 4.17

4.15 RC Phase Shift Oscillator using FET . . . . . . . . . . . . . . . . . . . . . . . . 4.18

4.16 Wien Bridge Oscillator using Op-Amp . . . . . . . . . . . . . . . . . . . . . . . 4.18

4.17 Tuned Oscillator Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.20

4.17.1 Hartley oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.20

4.17.2 Colpitts oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.21

4.17.3 Crystal oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.22

4.17.4 Series resonant circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.23

4.17.5 Parallel resonant circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.24


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CHChapter 5 Operational Amplifier and Its Applications 5.1 - 5.16

5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1

5.2 Operational Amplifier (Op-Amp) . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1

5.3 Characteristics of Op-amp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2

5.4 Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4

5.5 Input Offset Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4

5.6 Output Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4

5.7 Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4

5.8 Power Supply Rejection Ratio (PSRR) . . . . . . . . . . . . . . . . . . . . . . . 5.4

5.9 Non Ideal Model of Op-amp . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4

5.10 Virtual Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5

5.11 Generalized Op-Amp Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5

5.12 Types of Op-Amp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6

5.12.1 Inverting operational amplifier . . . . . . . . . . . . . . . . . . . . . . . 5.6

5.12.2 Non-inverting operational amplifier . . . . . . . . . . . . . . . . . . . . 5.7

5.12.3 Voltage follower . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.8

5.13 Op-Amp Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . . . . . . . 5.9

5.14 Op-Amp Output Drive Capability . . . . . . . . . . . . . . . . . . . . . . . . . 5.10

5.15 The Summing Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.10

5.15.1 Summing amplifier circuit . . . . . . . . . . . . . . . . . . . . . . . . . 5.10

5.16 The Differential Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.12

5.17 Integrator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.14

5.18 Differentiator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.15



Chapter 6 Fundamentals of Communication Engineering 6.1 - 6.21

6.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.1

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CH6.2 Transducer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.1

6.3 Wireless Communication System . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2

6.4 Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2

6.5 Amplitude Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3

6.5.1 Power of AM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5

6.5.2 Bandwidth of AM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.6

6.5.3 Modulation efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.6

6.5.4 Current relation in AM . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7

6.5.5 Generation of AM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.7

6.6 Double Sideband Suppressed Carrier (DSB-SC) . . . . . . . . . . . . . . . . . . 6.9

6.7 Single Sideband Suppressed Carrier (SSB-SC) . . . . . . . . . . . . . . . . . . . 6.10

6.7.1 Generation of SSB -SC modulation . . . . . . . . . . . . . . . . . . . . 6.10

6.8 Angle Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.10

6.8.1 Frequency modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.11

6.8.2 General expression of FM . . . . . . . . . . . . . . . . . . . . . . . . . 6.11

6.9 Narrowband FM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.12

6.10 Wideband FM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.13

6.11 Generation of FM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.13

6.11.1 Direct generation method . . . . . . . . . . . . . . . . . . . . . . . . . . 6.13

6.11.2 Indirect generation method . . . . . . . . . . . . . . . . . . . . . . . . . 6.14

6.12 Types of FM Demodulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.15

6.12.1 Slope detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.15

6.12.2 PLL method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.16

6.13 Phase Modulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.18

6.14 Relationship between FM and PM . . . . . . . . . . . . . . . . . . . . . . . . . 6.18



Review Questions RQ.1 - RQ.7

References R.1 - R.1

ISBN: 978-93-85983-61-0


Documents

Basics of Analog Electronics · 2020. 9. 23. · Zainab Haseeb PhD Scholor and Guest Faculty, Department of Electronics and Communication Engineering, Jamia Millia Islamia (A Central