5
B  C  6 4  0 P N P E  p i   t   a x i   a l   S i  l  i   c  o n T r  a n  s i   s  t   o r  © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com BC640 Rev. C3 1 March 2009 BC640 PNP Epitaxial Silicon T ransistor Switching and Amplifier Applications Complement to BC639 Absolute Maximum Ratings T a = 25°C unless otherwise noted Electrical Characteristics T a = 25° C unless otherwise noted Symbol Parameter Value Units V CER Collector-Emit ter Voltage at R BE =1KΩ -100 V V CES Collector-Emitter Voltage -100 V V CEO Collector-Emitter Voltage -80 V V EBO Emitter-Base Voltage -5 V I C Collector Current -1 A I CP Peak Collector Current -1.5 A I B Base Current -100 mA P C Collector Power Dissipation 1 W T J Junction Temperature 150 °C T STG Storage T emperature -65 ~ 150 °C Symbol Parameter Test Condition Min. T yp. Max. Units BV CEO Coll ector-E mi tter Br eakdown V ol tage I C = -10mA, I B =0 -80 V I CBO Collector Cut-off Current V CB = -30V, I E =0 -0.1 μA I EBO Emitter Cut-off Current V EB = -5V, I C =0 -10 μA h FE1 h FE2 h FE3 DC Current Gain V CE = -2V, I C = -5mA V CE = -2V, I C = -150mA V CE = -2V, I C = -500mA 25 40 25 160 V CE (s at) Collector-Emitter Saturation Voltage I C = -500mA, I B = -50mA -0.5 V V BE (on) Base-Emitter On Voltage V CE = -2V, I C = -500mA -1 V f T Current Gain Bandwidth Product V CE = -5V, I C = -10mA, f=50MHz 100 MHz 1. Emitter 2. Collector 3. Base TO-92 1

BC640

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 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC640 Rev. C3 1

March 2009

BC640PNP Epitaxial Silicon Transistor

Switching and Amplifier Applications

• Complement to BC639

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Electrical Characteristics Ta = 25°C unless otherwise noted

Symbol Parameter Value Units

VCER Collector-Emitter Voltage at RBE=1KΩ -100 V

VCES Collector-Emitter Voltage -100 V

VCEO Collector-Emitter Voltage -80 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -1 A

ICP Peak Collector Current -1.5 A

IB Base Current -100 mA

PC Collector Power Dissipation 1 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature -65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -80 V

ICBO Collector Cut-off Current VCB= -30V, IE=0 -0.1 μA

IEBO Emitter Cut-off Current VEB= -5V, IC=0 -10 μA

hFE1

hFE2

hFE3

DC Current Gain VCE= -2V, IC= -5mA

VCE= -2V, IC= -150mA

VCE= -2V, IC= -500mA

25

40

25

160

VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V

VBE (on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V

fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA,

f=50MHz

100 MHz

1. Emitter 2. Collector 3. Base

TO-921

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 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC640 Rev. C3 2

Package Marking and Ordering Information

Device Marking Device Package

BC640 BC640 TO-92

BC640 BC640BU TO-92

BC640 BC640TA TO-92

BC640 BC640TAR TO-92

BC640 BC640TF TO-92

BC640 BC640TFR TO-92

BC640 BC640_J35Z TO-92

BC640 BC640_J61Z TO-92

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 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC640 Rev. C3 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage 

Figure 5. Collector Output Capacitance

-0 -10 -20 -30 -40 -50-0

-100

-200

-300

-400

-500

IB = - 0.2 mA

IB = - 0.4 mA

IB = - 0.6 mA

IB = - 0.8 mA

IB = - 1.0 mA

IB = - 1.2 mA

IB = - 1.4 mA

IB = - 1.6 mA

IB = - 1.8 mA

 

   I   C   [  m   A   ] ,   C   O   L   L   E   C   T   O   R

   C   U   R   R   E   N   T

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1 -10 -100 -100010

100

1000

VCE = - 2V

 

   h   F   E ,

   D   C

   C   U   R   R   E   N   T   G   A   I   N

IC[mA], COLLECTOR CURRENT

-1 -10 -100 -1000-0.01

-0.1

-1

-10

IC = 10 IB

VCE(sat)

VBE(sat)

 

   V   B   E

   (  s  a   t   ) ,   V

   C   E   (  s

  a   t   )   [   V   ] ,   S   A   T   U   R   A   T   I   O   N

   V   O   L   T   A   G   E

IC[mA], COLLECTOR CURRENT

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2-1

-10

-100

-1000

VCE = - 2V

 

   I   C   [  m   A   ] ,   C   O   L   L   E   C   T   O   R

   C   U   R   R   E   N   T

VBE[V], BASE-EMITTER VOLTAGE

-1 -10 -1001

10

100

f=1MHz

 

   C  o   b

   [  p   F   ] ,   C   A   P   A   C   I   T   A

   N   C   E

VCB[V], COLLECTOR-BASE VOLTAGE

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 © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC640 Rev. C3 4

Mechanical Dimensions

0.46 ±0.10

1.27TYP

(R2.29)

   3 .   8

   6   M   A   X

[1.27 ±0.20]

1.27TYP

[1.27 ±0.20]

3.60 ±0.20

   1   4 .   4

   7       ±   0 .   4

   0

   1 .   0

   2       ±   0 .   1

   0   (   0 .   2

   5   )

   4 .   5

   8       ±   0 .   2

   0

4.58+0.25 –0.15

0.38+0.10 –0.05

   0 .   3

   8  +   0 .   1

   0

  –   0 .   0

   5

TO-92

Dimensions in Millimeters

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  © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.

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Rev. I39