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Hiroaki Kumakura National Institute for Materials Science(NIMS) INTERNATIONAL WORKSHOP ON Construction of Low-Carbon Society Using Superconducting and Cryogenics Technology, Mar. 7-9, Osaka Outline 1. MgB 2 wires(ALCA project) 2. BSCCO(Bi-2223 and Bi-2212) tapes and wires 3. Summary Bi-based high-T c oxide and MgB 2 tapes and wires promising for CO 2 emissions reduction

Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

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Page 1: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Hiroaki Kumakura

National Institute for Materials Science(NIMS)

INTERNATIONAL WORKSHOP ON Construction of Low-Carbon Society Using

Superconducting and Cryogenics Technology, Mar. 7-9, Osaka

Outline

1. MgB2 wires(ALCA project)

2. BSCCO(Bi-2223 and Bi-2212) tapes

and wires

3. Summary

Bi-based high-Tc oxide and MgB2 tapes and wires

promising for CO2 emissions reduction

Page 2: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

0

5

10

15

0 5 10 15 20 25 30 35 40

上部

臨界

磁界

, H

c2(T

)

温度, T(K)

Nb-Ti

Nb3Sn

無添加

10%SiC添加

H//c軸(薄膜)

H//ab面(薄膜)

Hc2 (

T)

10%-SiC-doped

MgB2 wire

H//c-axis

(MgB2 thin film)

MgB2 wire

w/o SiC doping

T (K)

(MgB2 thin film) H//a-b plane

Nb-Ti wire(4.2K operation)

MgB2 wire

(20K operation with

LH2 or cryocooler)

Bc2 of PIT processed MgB2 wire

High quality MgB2 single crystal

Zehetmayer M et al,

Phys. Rev. B 66(2002) 0525051-4

X. Zeng, et al., Nature Mater. 1(2002)35.

Page 3: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Examples of MgB2

wires and tapes

Mg+B+(SiC) powder

Metal tube

Heat treatment

Multi-filament

wire

Multi-filament

tape

Fabrication of MgB2 wire and tape

Powder-In-Tube(PIT) method

drawing

No grain orientation is required!

Page 4: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

104

105

106

0 2 4 6 8 10 12

Jc (

A/c

m2)

Magnetic Field B(Tesla)

tape(PIT)

MgB2/-Al

2O

3 thin film

(PLD method) 4.2K

tape(PIT)20K

Nb3Sn

The density of MgB2: ~50%

Microstructure of PIT MgB2 wire

Shrinkage of volume

during heat treatment Mg+B MgB2

B: 2.34g/cm3

Mg: 1.7

MgB2: 2.6

Typical Jc-B curves of PIT processed MgB2 tape

One big problem of PIT is the low packing

density (large porosity) of MgB2 core.

Page 5: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Comparison of IMD and PIT

Metal Tube

B Powder Mg rod

Internal Mg diffusion(IMD) process

Mg+B Powder

PIT process PIT method

Packing density: ~50%

IMD method

Packing density: ~80%

Metal Tube

Page 6: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

B+Mg(+SiC) powder

PIT method

B(+SiC) powder

Mg

diffusion

Mg diffusion method

Mono core wire

Cu-Ni Ta

200mm 200mm

200mm 200mm

Mg

B+SiC

7-filament wire

19-filament wire

Internal Mg Diffusion (IMD) Process

Page 7: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

1.2 mm

Longitudinal cross sections of IMD processed MgB2 wires

(uniformity in longitudinal direction)

Page 8: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

1000

104

105

7 8 9 10 11 12 13

En

gin

ee

rin

g J

c(J

e)

A/c

m2

Magnetic field H(T)

4.2K

PIT wire

IMD wire

104

105

0 2 4 6 8 10 12

Cri

tica

l cu

rren

t d

ensity J

c(A

/cm

2)

Magnetic field H(T)

IMD wire

PIT wire

IMD wire

PIT wire

4.2K

20K

Jc and Je comparisons of IMD and PIT

processed wires

Page 9: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Filament structure of IMD multi-filamentary wires

200μm

7-filaments

Ta

200μm

19-filaments

50μm

Ta Reacted Layer

The diffusion distance by

Mg liquid infiltration is

limited to <50μm !

The reduction of filament size is essential to complete the

reaction with short heat treatment time !

Single-filaments

Page 10: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

-30 130

Measured magnetic field Bz (mT)

Lift-off: 200 mm

Jc_SiC (A/cm2)

0.0

5.0 x 105

1.0 x 106

1.5 x 106

2.0 x 106

1 2 3 4 5 6 7 8 9

Jc (A/cm2)

@10 K,0 T

x (mm)

-300 0 300

Measured magnetic field Bz (mT)

Bz |dBz0/dx,dy| superpose SEM

Locally low property Localized Mg2Si

J = 1 MA/cm2 per Bpeak = 80 mT

0.2 mm

1 mm

Local Ic distribution of SiC added IMD wire

(Analysis by scanning hole probe microscope)

LT-SHPM, Kiss Lab. Kyushu Univ.

Page 11: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

(K. Togano et al.,

Supercond. Sci. Technol. 22 (2009) 015003)

About 3 times higher Jc is expected by the improvement of the homogeneity.

△: locally maximum Ic

estimated by the SHPM

Comparison of Jc values obtained by the resistive

method and SHPM

LT-SHPM, Kiss Lab. Kyushu Univ.

Page 12: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Comparison of C24H12 and SiC addition

(IMD processed MgB2 wires)

7 8 9 10 11 1210

3

104

105

IMD wires, = 0.6 mmJc (

A/c

m2)

B (T)

undoped

SiC-added

C24-added

Jc = 1.02 x 10

5 A/cm

2 4.2 KJc = 1.1x105A/cm2

7 8 9 10 11 1210

2

103

104

Je = 1.13 x 10

4 A/cm

2

IMD wires, = 0.6 mm

B (T)

Je (

A/c

m2)

undoped

SiC-added

C24-added

4.2 KJe = 1.3x104A/cm2

Coronene(C24H12)

Decomposition temperature:

~600oC

TEM image

Page 13: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

104

105

106

0 2 4 6 8 10 12

Critica

l cu

rre

nt

de

nsity, J

c(A

/cm

2)

Magnetic field, H(T)

4.2K

20K

PIT wire

IMD wire

PLD thin filmNb

3SnNb-Ti

PIT wire

IMD wire

PLD thin film

Present status of MgB2 wires

Page 14: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

eirr d(Ic/Ic0)/de

IMD 0.67% 0.143

PIT 0.54% 0.213

IMD-MgB2 wire shows larger

eirr and smaller strain

sensitivity

0.67%

0.54%

slope=0.21

slope=0.14

a

a’

b

b’

c

c’

d

d’

e

e’ a

a’

b

b’

c

c’

Stress effect of PIT and IMD mono-filamentary MgB2

wires(at 10 T, 4.2 K)

Voids at the center of IMD wires

seem to have no negative effect

on strain sensitivity of Jc.

Page 15: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Superconducting joint of IMD processed MgB2 wire

Fe sheath

C24H12 added MgB2 wire Mg

core

B layer

Pressing

(one end)

Metal tube

Pressing

Heat treatment

(under the same

condition as the

wire)

Fe or SS tube

Examples of joints

Page 16: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

1

10

100

0 2 4 6 8 10 12Magnetic field B(T)

Critica

l curr

en

t I c

(A)

Fe tube

Wire

S.S. tube

4.2K

Ic-B curves of superconducting joints(IMD MgB2 wire)

Page 17: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Crystal structure of Bi-based oxide superconductors

Bi2Sr2CaCu2O8+d

(Bi-2212) Bi2Sr2Ca2Cu3O10+d

(Bi-2223)

Bi-2212 (n = 1) Bi-2223 (n = 2)

N.S.C

S.C.

N.S.C.

S.C.

N.S.C.

Tc ~ 90K

Tc~110K

Bi

Cu

Sr

Ca

O

a-axis

b

c

Page 18: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Bi-based oxide wire and tape fabrication by a powder-in-tube(PIT) method

Powder Bi2O3, SrCO3, CaCO3, CuO

Metal tube(Ag)

Heat treatment

Multi-filamentary wire

(Bi-2223)

Multi-filamentary tape

drawing

Grain orientation of Bi-oxide is essential

to obtain large current transfer.

結晶粒の配向化が必須

Page 19: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Microstructure of Bi-2212 tape

Slow cooling from melting state

Conventional Sintering

C-axis grain orientation is obtained by the

Slow cooling from partially melting state.

Heat treatment schedule of Bi-2212 tape

Page 20: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

• Various wire configurations to fit different application requirements- cable (0.8-

1.0 mm) and insert coil (1.0-1.5 mm)

0.8 mm 0.8 mm 1.2 mm 1.5 mm 1.0 mm

Wire configuration (filament number in

sub x number of sub bundle)

Fill factor (%) Optimized wire

diameter (mm)

19 x 36 24.0 0.8

37 x 18 24.8 0.8

55x18 24.9 1

85 x 18 25.2 1.2

121 x 18 25.4 1.5

Bi-2212 wire configurations for different operating current

demands

Examples of Bi-2212 wires

Page 21: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

100

200

300

400

500

600

700

800

4 6 8 10 12 14 16

JE (

A/m

m2)

Magnetic Field (T)

As-drawn wire, closed ends

CIP at 100 ksi, closed ends

CIPed wire + OP HT, closed ends

1.2 mm 85 x18

1m barrel sample

Over Pressure Heat Treatment (10 bar HT by ASC/FSU)

1 bar HT, As-drawn

1 bar HT, CIP

Core densification by over pressure HT

10 bar HT

• Highly reproducible Bi-2212 wires with good Je performance

• Maximum length of Bi-2212 wire: ~1000m

4.2K

Page 22: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

Fabrication of Bi-2223 tapes by Powder-In-Tube(PIT) method

Powder

Metal tube(Ag)

Heat treatment

Multi-filamentary wire

(Bi-2223)

Multi-filamentary tape

drawing

Formation of Bi-2223 phase Bi-2212+Ca2PbO4+Ca2CuO3+? Bi-2223

Cross section of typical Bi-2223 tape

Page 23: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

C-axis grain oriented microstructure of

Bi-based superconducting tapes

Bi-2212 tape

Grain orientation by the slow

solidification from melting state.

Bi-2223 tape:

Grain orientation is obtained by the

combination of cold rolling and

heat treatment. (Y. Yamada, et al.)

Page 24: Bi-based high-Tc oxide and MgB2 tapes and wires …...thin film) MgB 2 wire w/o SiC doping T (K) (MgB thin film) H//a-b plane Nb-Ti wire(4.2K operation) MgB 2 wire (20K operation with

km-class Bi2223/Ag tape

Je~20,000A/cm2

(77K, self-field)

(4.2mmwx0.22mmt)

Cross section of typical Bi-2223 tape

(4.2mmwx0.22mmt)

Recent progress of Bi-2223/Ag tape conductors