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Bipolar junction transistors (BJTs) The BJT is a transistor with three regions and two pn junctions. The regions are named as the emitter, base, and collector and each is connected to a lead. There are two types of BJTs npn and pnp. 1. Arrow on the emitter terminal. 2. Arrow from p-type to the n-type material. ( direction of hole current flow) 3. Arrow along the direction of emitter current.

Bipolar junction transistors (BJTs) - KOCWcontents.kocw.net/KOCW/document/2013/koreasejong/... · 2016. 9. 9. · Bipolar junction transistors (BJTs) The BJT is a transistor with

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  • Bipolar junction transistors (BJTs)

    The BJT is a transistor with three regions and two pn junctions. The regions are named

    as the emitter, base, and collector and each is connected to a lead.

    There are two types of BJTs – npn and pnp.

    1. Arrow on the emitter terminal.

    2. Arrow from p-type to the n-type material.

    ( direction of hole current flow)

    3. Arrow along the direction of emitter current.

  • npn transistor

    • Under normal circumstances, IE has the greatest value of

    the three, a little bit larger than IC .

    • IB normally has the smallest value than the others

    • IE and IC are controlled by IB

    • forward current gain, β ~ a factor by which current

    increases from the base of a transistor to its collector.

    where ~ 100

    11

    B C E

    E B C

    C B

    C E

    I I I

    I I I

    I I

    I I

    //upload.wikimedia.org/wikipedia/commons/1/13/NPN_BJT_Basic_Operation_(Active).svg//upload.wikimedia.org/wikipedia/commons/1/13/NPN_BJT_Basic_Operation_(Active).svg

  • Terminology

  • Operation of npn Transistor

    B-E junction B-C junction Mode Voltages

    Forward Reverse Forward-active (활성) VE < VB < VC

    Forward Forward Saturation (포화) VE < VB > VC

    Reverse Reverse Cut-off (차단) VE > VB < VC

    Reverse Forward Reverse-active VE > VB > VC

    There is an avalanche breakdown mode for very high VCE

  • Active (Forward, Reverse)

    When VBE is sufficient to overcome the barrier potential of the junction, current is generated in the emitter and base region (IBE)

    The BJT operates between saturation (maximum IC) and cutoff (minimum IC) regions

  • 6.3.1 Transistor Currents

    current controlled (current driving) device

    : a small change in IB results in larger change in the other terminal current

  • 6.3.3 DC Beta

    The ratio of dc collector current to dc base current

    The most common transistor circuits have an input signal applied to the base and an output signal taken from the collector

  • 6.3.4 DC Alpha

    The ratio of dc collector current to dc emitter current.

    Also referred to as collector current efficiency.

  • 6.3.5 The Relationship Between Alpha and Beta

    EXAMPLE 6.5

    Determine the value of alpha for the transistor shown in Figure 6.16. Then, determine the value of IC using both the alpha and the beta ratings of the transistor.

  • 6.4 Transistor Characteristic Curves

  • 6.4.1 Collector Curves

    Kirchhoff’s law

    Assuming VBE = 0.75 V

    Saturation Mode !!

  • 6.4.1 Collector Curves

    400 W

    IC is determined by IB and .

    Active Mode !!

    Changing the value of RC has not affected the value of IC. But, VCE changed from 0.3 to 6 V

    IC is not controlled by VCE when a transistor is operated in the active region.

  • 6.4.2 Base Curves