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© September 16, 2017 Dr. Lynn Fuller, Professor Rochester Institute of Technology Microelectronic Engineering BJT IC Design Page 1 ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING 9-16-17 BJT_IC_Design.ppt BJT IC Design Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee/ Microelectronic Engineering Rochester Institute of Technology 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Email: [email protected] MicroE webpage: http://www.rit.edu/microelectronic/

BJT IC Design - RIT - Peoplepeople.rit.edu/lffeee/BJT_IC_Design.pdf · BJT IC Design Page 1 ... compare differential amplifiers ... Figure 1. (a) Basic, (b) Current-buffered, and

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© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 1

ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING

9-16-17 BJT_IC_Design.ppt

BJT IC Design

Dr. Lynn FullerWebpage: http://people.rit.edu/lffeee/

Microelectronic EngineeringRochester Institute of Technology

82 Lomb Memorial DriveRochester, NY 14623-5604

Tel (585) 475-2035

Email: [email protected] webpage: http://www.rit.edu/microelectronic/

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 2

OUTLINE

Differential Amplifier

Biasing, Current Sources, Mirrors

Output Stages

Operational Amplifiers

References

Homework Questions

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 3

DIFFERENTIAL AMPLIFIER

DC Analysis – assume:Identical transistors, Re=infinite, vin1=vin2=0

ThenIc1=Ic2=Ie/2Vo1=Vo2=Vcc-Rc Ie/2

Example: If Ie = 6mAVcc = 10, Vee = -10 and Rc = 2KAssume Vin1 = Vin2 = 0Vo1 = Vo2 = 4.0 voltsVE = -0.7VCE = 4.7

Rc

vi1

+

-

Rc

Re

vo1vi2

vo2+

-

+

-

+

-

Vee

Vcc

Ie

VE

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 4

SMALL SIGNAL ANALYSIS

rp

ib1

vi1

+

-

gm vbeor

b ib rp

ib2

vi2

+

-

Re

Rc Rc

vo2vo1

Lets define:

Differential input voltage

vid=vi1-vi2

Common input voltage

vic=(vi1+vi2)/2

Differential Output Voltage

Vod=Vo1-Vo2

Common output voltage

Voc=(Vo1+Vo2)/2

Single sided output voltage

Voss=Vo1 or Vo2

+Ve-

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 5

VOLTAGE GAINS: Avd, Avc, CMRR

Differential mode voltage gain, Avd = Vod / vid

Let vin1 = vid/2 + vic and vin2 = -vid/2 + vic

Ib1 = (vin1 – Ve) / rp Ib2 = (vin2 – Ve) / rp

Ib1 = (vid/2 – Ve) / rp Ib2 = (-vid/2 – Ve) / rp

Vo1 = - b ib1 Rc Vo2 = - b ib2 Rc

Vod = Vo1 – Vo2 = - b ib1 Rc - - b ib2 Rc

Vod = (b Rc / rp) (vid/2 +vid/2)

00

Avd = - b Rcrp

= - gm Rc

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 6

VOLTAGE GAINS: Avd, Avc, CMRR

Common Mode Voltage Gain Avc = Voc/Vic =(Vo1 + Vo2)/2(vin1 + vin2)/2

Let Vid = 0 thus vin1 = vin2 = Vic

Ve = 2 Re (b +1) ib

ib = (Vic – Ve) / rp

ib = Vic – 2 Re (b+1)ibrp 2 Re (b+1) + rp

Vic

- b ib1 Rc + -b ib2 Rc2

Voc =

- b Rc ib -b Rc Vic2Re (b+1) + rp

=Thus Voc =

and ib1 = ib2

-b Rc

2Re (b+1) + rpVoc Vic

=Avc =

Rearranging; ib =

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 7

OTHER RESULTS

Common Mode Rejection Ratio: CMRR is a figure of merit used to compare differential amplifiers

CMRR = AvdAvc

Differential Mode Input Resistance:

Rid = 2 rpCommon Mode Input Resistance:

Ric = rp + (b+1) 2 Re

Single Sided Output Differential Voltage Gain:

VossVid

=- b Rc

rp1/2

Single Sided Output Common Mode Voltage Gain:

-b Rc

2Re (b+1) + rpVoss Vic

= note: same

note: half

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 8

VARIATIONS

Variations:1. Resistor between emitter and –Vee rather than current source2. Series base resistors3. Emitter resistors4. Various types of current sources5. Darlington configuration6. FET’s7. Single sided outputs8. Active loads9. unbalanced or non symmetrical circuits

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 9

EXAMPLE DIFFERENTIAL AMPLIFIER

Analyze the following differential amplifier, b=200

2K

vi1

2K

vi2

vo2

+

-

+

-

-10

+10

T1 T21K1K

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 10

SOLUTION TO EXAMPLE ON PREVIOUS PAGE

DC Analysis:

Small Signal Analysis:Hand Calculation:

Avd = ½ gm Rc rpi/(1K+rpi)=62

or

Avd = ½ Beta Rc/(rpi +1K) = 62

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 11

SUMMARY

1. The differential amplifier should amplify the difference between

the two input voltages.

2. The differential amplifier should suppress signals that are

common to both inputs.

3. The differential amplifier with a constant current source is

superior to the differential amplifier with just a resistor.

4. The common mode rejection ratio is used as a figure of merit for

comparison.

5. The differential amplifier is a dc amplifier as well as an ac

amplifier.

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 12

709 OPERATIONAL AMPLIFIER

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 13

741 OPERATIONAL AMPLIFIER

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 14

SIMPLIFIED 741 OP AMP SCHEMATIC

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 15

SIMPLE CURRENT SOURCE

-V

Ie

+V

Load

Load

Ie

R

R

Ie = (V-0.7)/R

Ie Ree = roIn the next few pages we

will investigate current

sources, level shifting and

output stages of op amps

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 16

CURRENT SOURCE (HW Problem 1)

There are many types of current sources. Consider the following:

4.3K

-10

T15K

ReeIe

What is Ie? (Ans: 1mA)

5K

b ib

rpvbe+

-vtest

+

-

5K

4.3K

ib

5K

itest

ro

Ree = infinity if ro = infinite (not there)

Ree is calculated by students in pro.1.

Ree in this example is 4.68 Meg

if b = 100 and ro = 100K

rp = b(0.026/1mA)

= 100 (26)= 2.6K

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 17

CURRENT SOURCES

-V

IeLoad

I2I1Re

R1 Vbe1 = Vbe2 + I2Re

KT/q ln I1/Is = KT/q ln I2/Is + I2Re

note: I2 is always smaller than I1

Ie can be small without R1being small

Ree is ~Meg ohms

KT/q ln(I1/I2)= I2Re

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 18

EXAMPLES FOR CURRENT SOURCE

Example 1: suppose I1 = 1 mA and I2 is 10 uA find Re

Example 2: suppose I1 = 1 mA and Re = 20K find I2

KT/q ln(I1/I2)= I2Re

KT/q ln(I1/I2) = I2Re

0.026 ln (1mA/10uA) = 10uA Re

0.1197 = 10uA Re

Re = 11.97K

0.026ln(1mA/I2)=20KI2

Try I2 = Left Side =

1uA 179K

5uA 27.6K

6uA 22.2K

7uA 18.4K

Etc.

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 19

MORE CURRENT SOURCES

Figure 1. (a) Basic, (b) Current-buffered, and (c) Wilson current sources.

Io

IseqV B E / kT( )

1 VC E

VA

Io = Iref / (1+2/b) Io = Iref / (1+2/b2)Io = Iref / (1+2/b2)

Ree = ro Ree = ro Ree = MEG ohms

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 20

LEVEL SHIFTING

It would be nice to have zero volts out when we have zero volts in. We can achieve this by adding a level shifting stage.

DC Voltage

Level

Shifting

+

Vshift

-

I1

-10

Vo2

Vout

+10

If Ie = 6mA

And Rc = 2K

for vi1 = vi2 = 0

Vo2 = 4 volts

Thus we need a

4 volt shift to make

Vout = 0 volts

Rc

vi1

+

-

Rc

Re

vo1vi2

vo2+

-

+

-

+

-

Vee = -10

Vcc =+10

Ie

Vo1

Note: in the ac equivalent circuit current sources are open circuits and voltage sources are short circuit. (We could use a battery)

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 21

VOLTAGE SOURCES / REFERENCES

I1VL = nVbe

n

VL = Vz + Vbe

ro = n(KT/q)/I1 ro = rz + (KT/q)/I1

I1

dVL/dT = dVz/dT +dVbe/dT

Vz

Voltage sources should have constant voltage and zero source resistance.

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 22

VOLTAGE SOURCES

Load

+V

What is the purpose of D1?

(answer: reduces the change in VL with temperature)

D1

R2

R1

Assume Ib is small compared to I1

I1

VB -0.7 = (V-0.7) R2/(R1+R2)

VB

ro = rp + R1//R2

VL = VB - 0.7

Therefore: VL = (V-0.7) R2/(R1+R2)

(b+1)Note: small

VL+

-

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 23

VOLTAGE MIRROR

VzLoadLoad LoadLoad

+V+V

Vz

multiple emittertransistor

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 24

LEVEL SHIFTING

+V

R2

R1

I2

Vbe VL

+

-

I1

I2 = Vbe/R2

VL = Vbe (1 + R1/R2)

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 25

LEVEL SHIFTING

It would be nice to have zero volts out when we have zero volts in. We can achieve this by adding a level shifting stage.

Level

Shifting1

+

Vshift

-

I1

-10

Vo2

Vout

+10

If Ie = 6mA

And Rc = 2K

for vi1 = vi2 = 0

Vo2 = 4 volts

Thus we need a

4 volt shift to make

Vout = 0 volts

Rc

vi1

+

-

Rc

Re

vo1vi2

vo2+

-

+

-

+

-

Vee = -10

Vcc =+10

Ie

Vo1

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 26

LEVEL SHIFTING

R1VL

+

-

I1

-10

Vo2

+10

R2

R1

I1

-10

+10

Vo2

Level shifting should have high input resistance so it will not “load” the previous stage. Common collector input for high input resistance.

Vo1 Vo1

Simple resistor level shifter

Vbe Multiplier level shifter

VL = Vbe (1 + R1/R2)

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 27

OUTPUT STAGES

An output stage is needed to provide the capability of sourcing or sinking “large” currents to the load

With no signal in the transistors T1 and T2 are biased in an off state. This is called a class B amplifier.

Complementary Symmetry emitter

follower output stage

RL

-V

+V

T1

V2

T2

I L

For V2 > 0.7 T1 is on and current flows from +V thru T1

and RL to Gnd. T2 is off.

For V2 < 0.7 T2 is on and current flows from Gnd thru RL

and T2 to -V. T1 is off.

VL

t+

-

VL

Crossover Distortion

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 28

OUTPUT STAGES

To eliminate the crossover distortion we can bias the transistors T1 and T2 so that they are just ready to conduct (ie Vbe ~ 0.65)

Note: D1 and D2 are probably transistors identical to T1 and T2 with Base and Collector shorted. Thus I1 = I2 and is called the idle current. I1 = (2 V -1.4)/2R

RL

-V

+V

T1

Vin

T2

I L

+

-

I1 I2

VL

R

R

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 29

OUTPUT STAGES

RL

-V

T1

T2

I L

+

-

VL

I1

+VVo1

Level shifting and output stage

biasing

Output stage and load

R

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 30

OUTPUT STAGE WITH CURRENT LIMITING

RL

Re

Re

-V

+V

T1

T4

T3

T2

I L

When T1 is on IL flows from +V thru T1, Re and Rl to Gnd. If RL accidently went to zero IL would only go to 0.7/Re because at that value of IL T3 would turn on which would remove the base drive from T1 thus IL would be limited to 0.7/Re. Similar for T2.

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 31

SIMPLE OPERATIONAL AMPLIFIER

Design involves selecting values for RB and Re

RL

47

47

+10

T6

T9

T8

T7

I L

5.6K

vi1

5.6K

vi2

vo1

+

-

+

-

T1 T21K1K

Re

VoL

1.8K

T31K

1K RB

T41K

1K

-10

100

T5

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 32

ACTIVE LOADS

Replacing some of the resistors with current sources requires less space and enables higher differential voltage gain and lower common mode gain because ro replaces RC in the collector.

ro = VA/IC and can be even higher

vi1 vi2+

-

+

-

-V

+V

T1T2

I

Vo1

I/2I/2

Practically: I/2 sources can not be made exactly correct. (see next page)

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 33

ACTIVE LOADS – CURRENT MIRROR

vi1 vi2+

-

+

-

-V

+V

IE

Vo2

I2=IE/2I1=IE/2

DC Analysis:1. IE is constant current.2. I1 = I2 = IE/2

3. Vo1 = V -0.7actually Vo1 = V – KT/q ln I1/IS

4. Vo2 = V – VEB1-VBC2Vo2 = V – KT/q ln I1/Is – VBC2

When Vin1=Vin2=zero and I1=I2=IE/2 we have everything balanced and VBC2=VBC1=0 thus Vo2=V-0.7

5. When Vin1 > Vin2 then I1 > I2 and Vo2 rises toward +VNote: p-p signal swing is about 1 volt

T3 T4Vo1

T1 T2

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 34

SMALL SIGNAL ANALYSIS OF DIFF AMP WITH ACTIVE LOAD

Let V1,V2 and V3 be node voltages at node 1,2 and 3, summing currents KCL

at node1

(b+1)(Vin1–V1)/rp1 + (V2-V1)/ro1 + (V3-V1)/ro2+ (b+1)(Vin2-V1)/rp2–V1/REE = 0

at node2

V2/rd+V2/rp4 + (V2-V1)/ro1 + b(Vin1-V1)/rp1 = 0

at node3

bV2/rp4+V3/ro4 + (V3-V1)/ro2 + b(Vin2-V1)/rp2 = 0

vi1 vi2

+

-

+

-

-V

+V

REE

Vo2

IEE

T3 T4Vo1

rp1Vin1

+

-

ro1

bib1

ib1

rp2Vin2

+

-

ro2

bib2

ib

rp4vbe+

-

ro4

bib4

ib42

1

3

rd

T2T1

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 35

SMALL SIGNAL ANALYSIS OF DIFF AMP WITH ACTIVE LOAD

Rearranging:

at 1

at 2

at 3

[-1/REE-(b+1)/rp1-1/ro1-1/ro2-(b+1)/rp2]V1+[1/ro1]V2+ [1/ro2]V3 = RHS

RHS = -Vin2(b+1)/rp2 –Vin1(b+1)/rp1a1

[-1/ro1-b/rp1]V1 +[1/rd+1/rp4+1/ro1]V2+ 0 V3= -bVin1/rp1

a2 a3

[-b/rp2-1/ro2]V1+b/rp4V2 + [1/ro4+1/ro2]V3 = -bVin2/rp2

a4 a5

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 36

SMALL SIGNAL ANALYSIS OF DIFF AMP WITH ACTIVE LOAD

Using Cramer’s rule and determinants

V3 =

a1

a2

a4

1/ro1

a3

b/rp4

[

-bVin1/rp1

-bVin2/rp2

a1

a2

a4

1/ro1

a3

b/rp4

1/ro3

0

a5

-Vin2(b+1)/rp2 –Vin1(b+1)/rp1]

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 37

SMALL SIGNAL ANALYSIS OF DIFF AMP WITH ACTIVE LOAD

Example: let ro1= ro2 = ro4 = 50K

rp1 = rp2 = rp4 = 2K

b =100, rd =20, REE = infinite

a) If Vin1=1/2 volt and Vin2= -1/2 volt

Find V3 = 1246

Therefore Avd = 1246

b) If Vin1=1 volt and Vin2= 1 volt

Find V3 = 0.00005108

Therefore Avc = 0.00005108

c) CMMR = 1246/0.00005108 = 2.44e7

Simple Hand Calculation:

Avd = ½ Beta Rc/rp = 1250

or

Avd = ½ gm Rc = 1250

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 38

LTSPICE SIMULATION

Note: SPICE model

VA=100 for both

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 39

EXAMPLE FROM LAB

RC1

10 k

6 mA

–VEE = –12 V

vid

vo

Q2 Q1

100

VCC = +12 V

100

RC2

~

10 F

10 F RE2

RE1

RL

RC3

Q3

Q5

Q4 Q2N3904

Q2N3906

Q2N3906

100

100

Q6 Q2N3904

Q7 Q2N3906 See lab notes

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 40

REFERENCES

1. Sedra and Smith,

2. Device Electronics for Integrated Circuits, 2nd Edition, Kamins

and Muller, John Wiley and Sons, 1986.

3. The Bipolar Junction Transistor, 2nd Edition, Gerald Neudeck,

Addison-Wesley, 1989.

4. Analog Integrated Circuits, Gray and Meyers

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 41

HOMEWORK – BIPOLAR IC DESIGN

1. Derive the exact value of Ree for the current source on page 16.

2. Design a 100 µA current source.

3. For the simple op amp shown on page 31

a. let vin1 = vin2 = zero. Select values for Rc and Rb such

that Vout = zero.

b. What is the maximum load current before current

limiting?

c. Calculate the small signal differential voltage gain.

4. Do a SPICE analysis of the simple op amp on page 31. Show

DC Vout vs Vin and Voltage Gain. Answer: Gain ~128

5. Do a SPICE analysis of the differential amplifier using active

loads shown on page 33. Let V=10volts. Show DC Vout vs

Vin and Gain. Answer: Answer: Gain ~2000

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 42

CURRENT SOURCE (HW Problem 1)

There are many types of current sources. Consider the following:

4.3K

-10

T15K

ReeIe

What is Ie? (Ans: 1mA)

5K

b ib

rpvbe+

-vtest

+

-

5K

4.3K

ib

5K

itest

ro

Ree = infinity if ro = infinite (not there)

Ree is calculated by students in pro.1.

Ree in this example is 4.68 Meg

if b = 100 and ro = 100K

rp = b(0.026/1mA)

= 100 (26)= 2.6K

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 43

SOLUTION TO EXAMPLE ON PAGE 9

Analyze the following differential amplifier, b=200

2K

vi1

2K

vi2

vo2

+

-

+

-

-10

+10

T1 T21K1K

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 44

SOLUTION TO EXAMPLE ON PAGE 9

DC analysis: if Vin1 = Vin2 = zero, IC1 = IC2 and IB1=IB2

KVL: IB 1K + 0.7 + 2(b+1)IB 2K –10 = 0

IB = 9.3 / (1K+2(200+1) 2K = 11.6uA

IC = 200 IB = 2.32 mA

VCE1 =10 – - IB 1K - - 0.7 = 10.7

VCE2 = 10- IC 2K – - 0.7 = 6.06

rp = bVT / IC = 200 (0.026V)/2.32 mA = 2.24K

© September 16, 2017 Dr. Lynn Fuller, Professor

Rochester Institute of Technology

Microelectronic Engineering

BJT IC Design

Page 45

SOLUTION TO EXAMPLE ON PAGE 9

Avdss =b Rc

(rp 1K)1/2

-b Rc

2Re (b+1) + (rp 1K)Voss Vic

=

AC analysis:

= ½ (200) 2K / (1K+2.24K) = 61.7

= -400K / (4K(201)+3.24K) = 0.496

CMMR = 61.7 / .496 = 125

Avdss = ½ gm Rc rp/(1K+rp) = ½ 0.089 2K 2.24K/3.24K = 61.7or

Do the DC analysis of this circuit.

Find the small signal voltage gain Vout/Vin,

Input resistance and output resistance.

Beta = 100

VA = infinite

+9

Vin2.2K

Vout20uA+-

Class Examples

Beta=100, VA = very large.

1.1 Do the DC analysis of this circuit with Vs=zero. What is Vout (offset voltage)?

1.2. Calculate the voltage gain, Avmid.

1.3 What could be done to reduce the offset voltage and increase the gain at the same time?

4K

VCC =10

1.2K

1K

1K

1.2K

Vs +- Vout

2K

VEE =-10

Vin+

-

1KQ1

Q4

Q2

Q3

Q5

Class Examples