BPW41N_Photodiode-Datasheet

8/7/2019 BPW41N_Photodiode-Datasheet

1/5

BPW41NVishay Telefunken

1 (5)Rev. 2, 20-May-99

www.vishay.comDocument Number 81522

Silicon PIN Photodiode

Description

BPW41N is a high speed and high sensitive PIN photo-diode in a flat side view plastic package.The epoxy package itself is an IR filter, spectrallymatched to GaAs or GaAs on GaAlAs IR emitters(l p = 950 nm).The large active area combined with a flat case givesa high sensitivity at a wide viewing angle.

Features

DLarge radiant sensitive area (A=7.5 mm2)

DWide angle of half sensitivity = 65

D

High radiant sensitivityD

Fast response times

DSmall junction capacitance

DPlastic case with IR filter (

l=950 nm)

DSuitable for near infrared radiation

94 8480

ApplicationsHigh speed photo detector

Absolute Maximum RatingsTamb = 25 _ C

Parameter Test Conditions Symbol Value Unit

Reverse Voltage VR 60 V

Power Dissipation Tambx 25 C PV 215 mW

Junction Temperature Tj 100 C

Storage Temperature Range Tstg 55...+100 C

Soldering Temperature tx

5 s Tsd 260 C

Thermal Resistance Junction/Ambient RthJA 350 K/W


2/5


2 (5) Rev. 2, 20-May-99

www.vishay.com Document Number 81522

Basic CharacteristicsTamb = 25_ C

Parameter Test Conditions Symbol Min Typ Max Unit

Breakdown Voltage IR = 100 m A, E = 0 V(BR) 60 V

Reverse Dark Current VR = 10 V, E = 0 Iro 2 30 nA

Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 CD 70 pF

VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF

Open Circuit Voltage Ee = 1 mW/cm2,

l= 950 nm Vo 350 mV

Temp. Coefficient of Vo Ee = 1 mW/cm2,

l= 950 nm TKVo 2.6 mV/K

Short Circuit Current Ee = 1 mW/cm2,

l= 950 nm Ik 38 m A

Temp. Coefficient of Ik Ee = 1 mW/cm2, l = 950 nm TKIk 0.1 %/K

Reverse Light Current Ee = 1 mW/cm2,

l= 950 nm, VR = 5 V

Ira 43 45 m A

Angle of Half Sensitivity 65 deg

Wavelength of Peak Sensitivityl p 950 nm

Range of Spectral Bandwidth l 0.5 870...1050 nmNoise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10

14 W/ Hz

Rise Time VR = 10 V, RL = 1k W ,l

= 820 nmtr 100 ns

Fall Time VR = 10 V, RL = 1k W ,l

= 820 nmtf 100 ns

Typical Characteristics (Tamb = 25_ C unless otherwise specified)

20 40 60 80

1

10

100

1000

I

ReverseDarkCurrent(nA)

ro

Tamb Ambient Temperature ( C )

100

94 8403

VR=10V

Figure 1. Reverse Dark Current vs. Ambient Temperature

0 20 40 60 80

0.6

0.8

1.0

1.2

1.4

I

RelativeReverseLightCurrent

rarel

Tamb Ambient Temperature ( C )

100

94 8409

VR=5V

l =950nm

Figure 2. Relative Reverse Light Current vs.Ambient Temperature


3/5


3 (5)Rev. 2, 20-May-99


0.01 0.1 1

0.1

1

10

100

1000

I

ReverseLightCurrent(

A)

ra

Ee Irradiance ( mW/ cm2 )

10

94 8414

m

VR=5V

l =950nm

Figure 3. Reverse Light Current vs. Irradiance

0.1 1 10

1

10

100

VR Reverse Voltage ( V )

100

94 8415

I

ReverseLightCurrent(

A)

ra

m

1mW/cm2

0.5mW/cm2

0.2mW/cm2

0.1mW/cm2

0.05mW/cm2

0.02mW/cm2

l=950nm

Figure 4. Reverse Light Current vs. Reverse Voltage

0.1 1 10

0

20

40

60

80

C

Diod

eCapacitance(pF)

D

VR Reverse Voltage ( V )

100

94 8407

E=0

f=1MHz

Figure 5. Diode Capacitance vs. Reverse Voltage

750 850 950 1050

0

0.2

0.4

0.6

0.8

1.2

S(

)

RelativeSpect

ralSensitivity

rel

l Wavelength ( nm )

1150

94 8408

1.0

l

Figure 6. Relative Spectral Sensitivity vs. Wavelength

0.4 0.2 0 0.2 0.4

S

RelativeSensitivity

rel

0.6

94 8406

0.6

0.9

0.8

0

3010 20

40

50

60

70

800.7

1.0

Figure 7. Relative Radiant Sensitivity vs.Angular Displacement


4/5


4 (5) Rev. 2, 20-May-99

www.vishay.com Document Number 81522

Dimensions in mm

96 12195


5/5


5 (5)Rev. 2, 20-May-99


Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as theirimpact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).

The Montreal Protocol (1987 ) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use ofODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer applicationby the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly orindirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0 )7131 67 2831, Fax number: 49 (0 )7131 67 2423

Documents

BPW41N_Photodiode-Datasheet