Upload
others
View
8
Download
0
Embed Size (px)
Citation preview
电动车无线电能传输
谭洪涛
ANSYS Inc
EV/HEV中无线充电应用
• 磁感应式
1mm 1cm 10cm 1m 10m 100m
100%
50%
0%
Transfer Distance
Effi
cien
cy Resonance type
Inductive type(~15W) Inductive type(~50kW)
Ref: EE Times Japan 2009.10
ACPower
Inverter
Cable
Capacitor
Primary Coil
Secondary Coil
BatteryRectifier/Charger
电磁场
系统设计
汽车无线充电装置
0.00 100.00 200.00 300.00 400.00H (A_per_meter)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
B (t
esla
)Maxwell静磁场分析
• 铁心饱和Core’s BH curve, Mag_B field plotNo magnetic saturation
Nonlinear BH curve 0.00 20.00 40.00 60.00 80.00 100.00Current [A]
0.00
0.01
0.10
1.00
Gap
[met
er]
2D_Static_BHMutual Inductance L12 ANSOFT
Matrix1.L(C [nH]
0.0000e+000
5.7000e+003
1.1400e+004
1.7100e+004
2.2800e+004
2.8500e+004
3.4200e+004Specification Area
最大磁密分布在材料的线性区域,可将材料等效为线性磁性材料。
静态磁场分析
电抗:L, M耦合系数: k电磁场铁心饱和
Mag B
Coupling factor k – sliding gap
0.00 20.00 40.00 60.00 80.00 100.00 120.00 140.00 160.00Sliding [mm]
0.00
0.20
0.40
0.60
0.80
1.00
Mat
rix1.
Cpl
Coe
f(Cur
rent
_1,C
urre
nt_2
)
3D_Static_sliding_kCoupling - k ANSOFT
Curve InfoMatrix1.CplCoef(Current_1,Current_2)
Setup1 : LastAdaptiveGap='50mm'
Matrix1.CplCoef(Current_1,Current_2)Setup1 : LastAdaptiveGap='100mm'
Matrix1.CplCoef(Current_1,Current_2)Setup1 : LastAdaptiveGap='150mm'
Matrix1.CplCoef(Current_1,Current_2)Setup1 : LastAdaptiveGap='200mm'
铁心形状/材料线圈匝数电流大小气隙
涡流磁场分析
铁心形状/材料线圈匝数频率气隙屏蔽形状/材料
交流特性:电抗:L, M耦合系数: k磁场铁心磁滞效应屏蔽
屏蔽材料(Aluminum)
铁芯(Power Ferrite)
没有屏蔽 有屏蔽
磁场分析:参数抽取
• L, M, k : 自感
互感
耦合系数
k=0.54
L1 MM L2
M
L1
L2
频域求解
涡流场求解器计算阻抗矩阵,同时包含电阻和电抗;
计算的电阻是交流电阻,包含直流分量+集肤效应和临近效应引起的附加电阻。
Maxwell参数化分析
无线充电系统仿真
0
0
0
R1
(1/87-0.004) ohm
R2
(1/348-0.001) ohm
Cs
1.93uF
Cp
5.24uF
Rload
10ohm
W+
WM1
W+
WM2
D4
D3
D2
D1
IGBT4
IGBT3
IGBT2
IGBT1
C1
1000uF
TRANS4
DT4
TRANS3
SINE1.VAL > TRIANG1.VAL
TRANS2
DT1
TRANS1
SINE1.VAL < TRIANG1.VAL
STATE_11_4
SET: TSV4:=0SET: TSV3:=0SET: TSV2:=0SET: TSV1:=0DEL: DT4##Dead_Time
STATE_11_3
SET: TSV4:=0SET: TSV3:=1SET: TSV2:=1SET: TSV1:=0
STATE_11_2
SET: TSV4:=0SET: TSV3:=0SET: TSV2:=0SET: TSV1:=0DEL: DT1##Dead_Time
STATE_11_1
SET: TSV4:=1SET: TSV3:=0SET: TSV2:=0SET: TSV1:=1
TRIANG1
AMPL=1FREQ=Carrier_Freq
SINE1
AMPL=Modulation_IndexFREQ=Frequency
ICA: FML_INIT1
Modulation_Index:=0Carrier_Freq:=10kFrequency:=10k
DC_Source:=200Dead_Time:=2u
~
3PHAS
~
~
A * sin (2 * pi * f * t + PHI + phi_u)
PHI = 0°
PHI = -120°
PHI = -240°
THREE_PHASE1D5
D6
D7
D8
D9
D10 Battery- +
LBATT_A1
D11
D12
D13
D14
C2
1e-006farad
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00Time [ms]
-40.00
-20.00
0.00
20.00
40.00
Y1 [A
]
Curve Info rmsWM1.I
TR 9.4139
WM2.ITR 10.5939
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00Time [ms]
-300.00
-100.00
100.00
300.00
Y1 [V
]
Curve Info rmsWM1.V
TR 154.9045
WM2.VTR 120.2425
1.90 1.92 1.94 1.96 1.98 2.00Time [ms]
-40.00
-20.00
0.00
20.00
40.00
Y1 [A
]
-200.00
-100.00
0.00
100.00
200.00
Y2 [V
]
MX1: 1.9753MX2: 1.9783
-6.0797-1.2036-0.0090
131.1979
-0.51411.340627.9814
156.0455
0.0030
Curve Info Y Axis rmsWM1.I
TR Y1 9.3501
WM2.ITR Y1 10.5176
WM1.VTR Y2 153.6594
WM2.VTR Y2 119.4615
Current_1st_1:src
Current_1st_2:src
Current_2nd_1:src
Current_2nd_2:src
Current_1st_1:snk
Current_1st_2:snk
Current_2nd_1:snk
Current_2nd_2:snk
0
Rload
10ohm
Battery- +
LBATT_A1
D11
D12
D13
D14
C2
1e-006farad
AC200V Rectify InverterWireless Power Transformer Battery
Controller
控制电路和场路耦合
20kW @ 400V/20kHz
铁芯
线圈屏蔽板
副边线圈
原边线圈
降阶模型(ROM)
ROM在系统仿真中的应用
AC / 频域 TR / 时域
气隙偏移
仿真流程磁场求解器
+ 电路/系统仿真器
静磁场
涡流场电路/系统仿真
(AC / TR)阻抗模型
电路/驱动控制设计 波形、效率、功率因数等
瞬态场
场分布、损耗
铁芯、绕组
效率Map图
输出功率/输入功率
计算 每种工况下的耦合电容
90%
50%
20%
[%]100
cos
×=
=
in
out
PPVIP
η
θ
效率
[%]
偏移 [mm]气隙 [mm]
气隙 偏移
Max.96%
设计优化: 比较不同方案之间
盘式线圈 螺线管式线圈
效率随偏移大小的变化计算
同一个线圈间距
螺线管式线圈比盘式线圈效率更高
效率随线圈间距大小计算
无偏移
螺线管式线圈传输效率更高
Gap
ROM在系统级仿真的应用案例
AC400V Rectify InverterWireless Power Transformer Battery
Controller
0
0
0
R1
7.2mOhm
R2
3.6mOhm
Cs
1.72uF
Cp
4.96uF
Rload
13ohm
W
+WM1
W
+WM2
D4
D3
D2
D1
IGBT4
IGBT3
IGBT2
IGBT1
C1
1000uF
TRANS4
DT4
TRANS3
SINE1.VAL > TRIANG1.VAL
TRANS2
DT1
TRANS1
SINE1.VAL < TRIANG1.VAL
STATE_11_4
SET: TSV4:=0SET: TSV3:=0SET: TSV2:=0SET: TSV1:=0DEL: DT4##Dead_Time
STATE_11_3
SET: TSV4:=0SET: TSV3:=1SET: TSV2:=1SET: TSV1:=0
STATE_11_2
SET: TSV4:=0SET: TSV3:=0SET: TSV2:=0SET: TSV1:=0DEL: DT1##Dead_Time
STATE_11_1
SET: TSV4:=1SET: TSV3:=0SET: TSV2:=0SET: TSV1:=1
TRIANG1
AMPL=1FREQ=Carrier_Freq
SINE1
AMPL=Modulation_IndexFREQ=Frequency
ICA: FML_INIT1
Modulation_Index:=0Carrier_Freq:=20kFrequency:=20k
DC_Source:=400Dead_Time:=2u
~
3PHAS
~
~
A * sin (2 * pi * f * t + PHI + phi_u)
PHI = 0°
PHI = -120°
PHI = -240°
THREE_PHASE1D5
D6
D7
D8
D9
D10 Battery- +
LBATT_A1
D11
D12
D13
D14
C2
1uF
2.00 2.20 2.40 2.60 2.80 3.00Time [ms]
-150.00
-100.00
-50.00
0.00
50.00
100.00
150.00
Y1
[A]
Curve Info rmsWM1.I
TR 41.6165
WM2.ITR 34.8648
2.00 2.20 2.40 2.60 2.80 3.00Time [ms]
-800.00
-300.00
200.00
700.00
Y1
[V]
Curve Info rmsWM1.V
TR 281.0066
WM2.VTR 321.9453
2.900 2.925 2.950 2.975 3.000Time [ms]
-250.00
-125.00
0.00
125.00
250.00
Y1
[A]
-1000.00
-500.00
0.00
500.00
873.02
Y2
[V]
MX1: 2.9200MX2: 2.9811
-408.7847-315.0105-64.8250
-40.2840-377.1247-319.5653 -53.6971
-0.0037
0.0610
Curve Info Y Axis rmsWM1.I
TR Y1 38.9542
WM2.ITR Y1 34.1140
WM1.VTR Y2 276.0822
WM2.VTR Y2 316.6292
PWRProbe
PWR_Probe1
Current_1:srcCurrent_2:src
Current_1:snkCurrent_2:snk
PWRProbe
PWR_Probe2
系统仿真结果返回磁场计算
磁密云图
0.00 0.20 0.40 0.60 0.80 1.00Distance [meter]
0.00
0.00
0.01
0.10
1.00
10.00
Mag
_B [m
Tesl
a]
2D_EddyXY Plot 1 ANSOFT
Curve InfoMag_B
Setup1 : LastAdaptiveFreq='20kHz' Phase='0deg'
磁场强度
Distance
Distance
铁心磁滞效应计算
磁滞损耗
考虑介质损耗角
( )δµµµµ
tan1 jj−′=
′′−′=
Freq [kHz]Core1st_LossSetup1 : LastAdaptivePhase='0deg'
Core2nd_LossSetup1 : LastAdaptivePhase='0deg'
1 20.000000 0.909102 0.313144
3D_EddyCore Loss ANSOFT
Core loss[W]
Primary
Secondary
涡流损耗计算
关键技术: 阻抗边界条件
原边表面损耗 副边表面损耗
Freq [kHz]Shield1st_LossSetup1 : LastAdaptivePhase='0deg'
Shield2nd_LossSetup1 : LastAdaptivePhase='0deg'
1 20.000000 22.938675 37.886583
3D_EddyShield Loss ANSOFT
屏蔽损耗[W]
电磁辐射: 近场→远场耦合
多物理场耦合: 电磁场 –温度场
案例: 停车时的无线充电研究
电磁
充电盘有铝罐杂物 温度分布(Max. 25 degree)
ANSYS Workbench
Maxwell中线圈电导率随温度的变化
))22(*0039.01(1
−+=
Tempσ
损耗密度分布
铁芯损耗 铜耗
Worbench耦合
简单的拖拽式操作 电磁场和温度场双向耦合
温度分布
双向耦合计算温度
基于反馈的温度分布,Maxwell重新计算损耗; 上述损耗反馈回到温度场中重新计算温度分布; 经过多次迭代,直到温度分布区域稳定。
0
0
0
R1
(1/87-0.004) ohm
R2
(1/348-0.001) ohm
Cs
1.93uF
Cp
5.24uF
Rload
10ohm
W+
WM1
W+
WM2
D4
D3
D2
D1
IGBT4
IGBT3
IGBT2
IGBT1
C1
1000uF
TRANS4
DT4
TRANS3
SINE1.VAL > TRIANG1.VAL
TRANS2
DT1
TRANS1
SINE1.VAL < TRIANG1.VAL
STATE_11_4
SET: TSV4:=0SET: TSV3:=0SET: TSV2:=0SET: TSV1:=0DEL: DT4##Dead_Time
STATE_11_3
SET: TSV4:=0SET: TSV3:=1SET: TSV2:=1SET: TSV1:=0
STATE_11_2
SET: TSV4:=0SET: TSV3:=0SET: TSV2:=0SET: TSV1:=0DEL: DT1##Dead_Time
STATE_11_1
SET: TSV4:=1SET: TSV3:=0SET: TSV2:=0SET: TSV1:=1
TRIANG1
AMPL=1FREQ=Carrier_Freq
SINE1
AMPL=Modulation_IndexFREQ=Frequency
ICA: FML_INIT1
Modulation_Index:=0Carrier_Freq:=10kFrequency:=10k
DC_Source:=200Dead_Time:=2u
~
3PHAS
~
~
A * sin (2 * pi * f * t + PHI + phi_u)
PHI = 0°
PHI = -120°
PHI = -240°
THREE_PHASE1D5
D6
D7
D8
D9
D10 Battery- +
LBATT_A1
D11
D12
D13
D14
C2
1e-006farad
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00Time [ms]
-40.00
-20.00
0.00
20.00
40.00
Y1
[A]
Curve Info rmsWM1.I
TR 9.4139
WM2.ITR 10.5939
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00Time [ms]
-300.00
-100.00
100.00
300.00
Y1
[V]
Curve Info rmsWM1.V
TR 154.9045
WM2.VTR 120.2425
1.90 1.92 1.94 1.96 1.98 2.00Time [ms]
-40.00
-20.00
0.00
20.00
40.00
Y1
[A]
-200.00
-100.00
0.00
100.00
200.00
Y2
[V]
MX1: 1.9753MX2: 1.9783
-6.0797-1.2036-0.0090
131.1979
-0.51411.340627.9814
156.0455
0.0030
Curve Info Y Axis rmsWM1.I
TR Y1 9.3501
WM2.ITR Y1 10.5176
WM1.VTR Y2 153.6594
WM2.VTR Y2 119.4615
Current_1st_1:src
Current_1st_2:src
Current_2nd_1:src
Current_2nd_2:src
Current_1st_1:snk
Current_1st_2:snk
Current_2nd_1:snk
Current_2nd_2:snk
0
Rload
10ohm
Battery- +
LBATT_A1
D11
D12
D13
D14
C2
1e-006farad
结论
ANSYS电磁场和系统仿真耦合仿真技术可以轻松便捷地实现EV/HEV的无线充电设计;
ANSYS多域耦合仿真技术,可以解决无线充电设计中电磁场与温度场的双向耦合问题。
谢谢