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1Subject to change without noticewwwcreecomwireless
CGH55015F1 CGH55015P115 W 5500-5800 MHz GaN HEMT for WiMAX
Creersquos CGH55015F1CGH55015P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency high gain and wide bandwidth
capabilities which makes the CGH55015F1CGH55015P1 ideal for 55-58 GHz WiMAX
and linear amplifier applications The transistor is available in both screw-down flange
and solder-down pill packages Based on appropriate external match adjustment the
CGH55015F1CGH55015P1 is suitable for 49 - 55 GHz applications as well
Package Type 440196 amp 440166PN CGH55015P1 amp CGH55015F1
Rev
40
ndash M
ay 2
015
Features
bull 55 - 58 GHz Operationbull 15 W Peak Power Capability bull gt105 dB Small Signal Gainbull 2 W PAVE lt 20 EVMbull 25 Efficiency at 2 W Average Powerbull Designed for WiMAX Fixed Access 80216-2004 OFDM Applicationsbull Designed for Multi-carrier DOCSIS Applications
Typical Performance 55-58GHz (TC = 25˚C)
Parameter 550 GHz 565 GHz 580 GHz Units
Small Signal Gain 107 110 107 dB
EVM at PAVE = 23 dBm 19 18 20
EVM at PAVE = 33 dBm 15 15 17
Drain Efficiency at PAVE = 33 dBm 25 25 25
Input Return Loss 115 145 105 dB
NoteMeasured in the CGH55015-AMP amplifier circuit under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst 5 ms Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
2 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10 +2 Volts 25˚C
Power Dissipation PDISS 7 Watts
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 40 mA 25˚C
Maximum Drain Current1 IDMAX 15 A 25˚C
Soldering Temperature2 TS 245 ˚C
Screw Torque τ 60 in-oz
Thermal Resistance Junction to Case3 RθJC 80 ˚CW 85˚C
Case Operating Temperature3 TC -40 +150 ˚C
Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomRFDocument-Library3 Measured for the CGH55015 at PDISS = 7W
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 36 mA
Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 115 mA
Saturated Drain Current IDS 29 35 ndash A VDS = 60 V VGS = 20 V
Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 36 mA
RF Characteristics23 (TC = 25˚C F0 = 565 GHz unless otherwise noted)
Small Signal Gain GSS 85 110 ndash dB VDD = 28 V IDQ = 115 mA
Drain Efficiency4 η 206 25 ndash VDD = 28 V IDQ = 115 mA PAVE = 20 W
Error Vector Magnitude EVM ndash 20 25 VDD = 28 V IDQ = 115 mA PAVE = 20 W
Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 115 mA PAVE = 20 W
Dynamic Characteristics
Input Capacitance CGS ndash 45 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Output Capacitance CDS ndash 13 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Feedback Capacitance CGD ndash 02 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Notes1 Measured on wafer prior to packaging2 Measured in the CGH55015-AMP test fixture3 Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst 5 ms Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF4 Drain Efficiency = POUT PDC
3 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
-4
-3
-2
-1
0
1
2
8
9
10
11
12
13
14
S11
(dB
)
S21
(dB
)Gain and Input Retrun Loss vs Frequency of
CGH55015F Vdd=28 VIdq=115 mA
-12
-11
-10
-9
-8
-7
-6
-5
0
1
2
3
4
5
6
7
52 53 54 55 56 57 58 59 60 61
S11
(dB
)
S21
(dB
)
Frequency (GHz)
S21 S11
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency measured in the CGH55015-AMP VDD = 28 V IDQ = 115 mA
EVM and Efficiency vs Frequency measured in the CGH55015-AMP
VDD = 28 V IDQ = 115 mA POUT = 25 W
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
24
27
30
18
24
30
Dra
inEf
ficie
ncy
EVM
()
EVM amp Efficiency of CGH55015 vs FreqeuncyVdd=28VIdq=115 mAPout=33 dBm
15
18
21
00
06
12
545 550 555 560 565 570 575 580 585
Dra
inEf
ficie
ncy
EVM
()
Frequency (GHz)
EVM
Drain Efficiency
4 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WiMAX Performance
Drain Efficiency and Gain vs Power Output measured in the CGH55015-AMPVDD = 28 V IDQ = 115 mA 80216-2004 OFDM PAR = 98 dB
Typical EVM and Drain Efficiency vs Output Power measured in the CGH55015-AMP at 550 GHz 565 GHz 580 GHz 80216-2004 OFDM PAR=98 dB
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
20
25
30
35
8
10
12
14
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Gain EVM and Drain Efficiency vs Output PowerVdd = 28 V Idq=115 mA
550 GHz (Gain) 565 GHz (Gain) 580 GHz (Gain)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
0
2
4
6
15 20 25 30 35
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Power Output (dBm)
20
25
30
35
80
100
120
140
Dra
inEf
ficie
ncy
()
EVM
()
Typical EVM vs Output Power of CGH55015F550 GHz 565GHz 580GHz
550 GHz (EVM) 565 GHz (EVM) 580 GHz (EVM)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
00
20
40
60
15 20 25 30 35
Dra
inEf
ficie
ncy
()
EVM
()
Power Output (dBm)
5 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
NoteMER is the metric of choice for cable systems and can be related to EVM by the following equation EVM() = 100 x 10 ^ -((MERdB + MTAdB)20) MTA is the ldquomaximum-to-average constellation power ratiordquo which varies with the modulation type MTA = 0 for BPSK and QPSK 255 for 16QAM and 8QAM-DS 368 for 64QAM and 32QAM-DS 423 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit
NoteUnder DOCSIS 60 MHz Channel BW 64 QAM PN23 Filter Alpha 018 PAR = 67dB
33
34
35
36
37
38
39
40
15 20 25 30 35 40Power Output (dBm)
Mod
ulat
ion
Erro
rRat
io(d
B)
550 GHz
565 GHz
580 GHz
00
02
04
06
08
10
12
14
16
15 20 25 30 35 40
Power Output (dBm)
EVM
()
550 GHz
565 GHz
580 GHz
6 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
2 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 84 Volts 25˚C
Gate-to-Source Voltage VGS -10 +2 Volts 25˚C
Power Dissipation PDISS 7 Watts
Storage Temperature TSTG -65 +150 ˚C
Operating Junction Temperature TJ 225 ˚C
Maximum Forward Gate Current IGMAX 40 mA 25˚C
Maximum Drain Current1 IDMAX 15 A 25˚C
Soldering Temperature2 TS 245 ˚C
Screw Torque τ 60 in-oz
Thermal Resistance Junction to Case3 RθJC 80 ˚CW 85˚C
Case Operating Temperature3 TC -40 +150 ˚C
Note1 Current limit for long term reliable operation2 Refer to the Application Note on soldering at wwwcreecomRFDocument-Library3 Measured for the CGH55015 at PDISS = 7W
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min Typ Max Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -38 -30 -23 VDC VDS = 10 V ID = 36 mA
Gate Quiescent Voltage VGS(Q) ndash -27 ndash VDC VDS = 28 V ID = 115 mA
Saturated Drain Current IDS 29 35 ndash A VDS = 60 V VGS = 20 V
Drain-Source Breakdown Voltage VBR 120 ndash ndash VDC VGS = -8 V ID = 36 mA
RF Characteristics23 (TC = 25˚C F0 = 565 GHz unless otherwise noted)
Small Signal Gain GSS 85 110 ndash dB VDD = 28 V IDQ = 115 mA
Drain Efficiency4 η 206 25 ndash VDD = 28 V IDQ = 115 mA PAVE = 20 W
Error Vector Magnitude EVM ndash 20 25 VDD = 28 V IDQ = 115 mA PAVE = 20 W
Output Mismatch Stress VSWR ndash ndash 10 1 YNo damage at all phase angles VDD = 28 V IDQ = 115 mA PAVE = 20 W
Dynamic Characteristics
Input Capacitance CGS ndash 45 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Output Capacitance CDS ndash 13 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Feedback Capacitance CGD ndash 02 ndash pF VDS = 28 V Vgs = -8 V f = 1 MHz
Notes1 Measured on wafer prior to packaging2 Measured in the CGH55015-AMP test fixture3 Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst 5 ms Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF4 Drain Efficiency = POUT PDC
3 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
-4
-3
-2
-1
0
1
2
8
9
10
11
12
13
14
S11
(dB
)
S21
(dB
)Gain and Input Retrun Loss vs Frequency of
CGH55015F Vdd=28 VIdq=115 mA
-12
-11
-10
-9
-8
-7
-6
-5
0
1
2
3
4
5
6
7
52 53 54 55 56 57 58 59 60 61
S11
(dB
)
S21
(dB
)
Frequency (GHz)
S21 S11
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency measured in the CGH55015-AMP VDD = 28 V IDQ = 115 mA
EVM and Efficiency vs Frequency measured in the CGH55015-AMP
VDD = 28 V IDQ = 115 mA POUT = 25 W
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
24
27
30
18
24
30
Dra
inEf
ficie
ncy
EVM
()
EVM amp Efficiency of CGH55015 vs FreqeuncyVdd=28VIdq=115 mAPout=33 dBm
15
18
21
00
06
12
545 550 555 560 565 570 575 580 585
Dra
inEf
ficie
ncy
EVM
()
Frequency (GHz)
EVM
Drain Efficiency
4 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WiMAX Performance
Drain Efficiency and Gain vs Power Output measured in the CGH55015-AMPVDD = 28 V IDQ = 115 mA 80216-2004 OFDM PAR = 98 dB
Typical EVM and Drain Efficiency vs Output Power measured in the CGH55015-AMP at 550 GHz 565 GHz 580 GHz 80216-2004 OFDM PAR=98 dB
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
20
25
30
35
8
10
12
14
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Gain EVM and Drain Efficiency vs Output PowerVdd = 28 V Idq=115 mA
550 GHz (Gain) 565 GHz (Gain) 580 GHz (Gain)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
0
2
4
6
15 20 25 30 35
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Power Output (dBm)
20
25
30
35
80
100
120
140
Dra
inEf
ficie
ncy
()
EVM
()
Typical EVM vs Output Power of CGH55015F550 GHz 565GHz 580GHz
550 GHz (EVM) 565 GHz (EVM) 580 GHz (EVM)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
00
20
40
60
15 20 25 30 35
Dra
inEf
ficie
ncy
()
EVM
()
Power Output (dBm)
5 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
NoteMER is the metric of choice for cable systems and can be related to EVM by the following equation EVM() = 100 x 10 ^ -((MERdB + MTAdB)20) MTA is the ldquomaximum-to-average constellation power ratiordquo which varies with the modulation type MTA = 0 for BPSK and QPSK 255 for 16QAM and 8QAM-DS 368 for 64QAM and 32QAM-DS 423 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit
NoteUnder DOCSIS 60 MHz Channel BW 64 QAM PN23 Filter Alpha 018 PAR = 67dB
33
34
35
36
37
38
39
40
15 20 25 30 35 40Power Output (dBm)
Mod
ulat
ion
Erro
rRat
io(d
B)
550 GHz
565 GHz
580 GHz
00
02
04
06
08
10
12
14
16
15 20 25 30 35 40
Power Output (dBm)
EVM
()
550 GHz
565 GHz
580 GHz
6 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
3 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
-4
-3
-2
-1
0
1
2
8
9
10
11
12
13
14
S11
(dB
)
S21
(dB
)Gain and Input Retrun Loss vs Frequency of
CGH55015F Vdd=28 VIdq=115 mA
-12
-11
-10
-9
-8
-7
-6
-5
0
1
2
3
4
5
6
7
52 53 54 55 56 57 58 59 60 61
S11
(dB
)
S21
(dB
)
Frequency (GHz)
S21 S11
Typical WiMAX Performance
Small Signal S-Parameters vs Frequency measured in the CGH55015-AMP VDD = 28 V IDQ = 115 mA
EVM and Efficiency vs Frequency measured in the CGH55015-AMP
VDD = 28 V IDQ = 115 mA POUT = 25 W
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
24
27
30
18
24
30
Dra
inEf
ficie
ncy
EVM
()
EVM amp Efficiency of CGH55015 vs FreqeuncyVdd=28VIdq=115 mAPout=33 dBm
15
18
21
00
06
12
545 550 555 560 565 570 575 580 585
Dra
inEf
ficie
ncy
EVM
()
Frequency (GHz)
EVM
Drain Efficiency
4 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WiMAX Performance
Drain Efficiency and Gain vs Power Output measured in the CGH55015-AMPVDD = 28 V IDQ = 115 mA 80216-2004 OFDM PAR = 98 dB
Typical EVM and Drain Efficiency vs Output Power measured in the CGH55015-AMP at 550 GHz 565 GHz 580 GHz 80216-2004 OFDM PAR=98 dB
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
20
25
30
35
8
10
12
14
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Gain EVM and Drain Efficiency vs Output PowerVdd = 28 V Idq=115 mA
550 GHz (Gain) 565 GHz (Gain) 580 GHz (Gain)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
0
2
4
6
15 20 25 30 35
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Power Output (dBm)
20
25
30
35
80
100
120
140
Dra
inEf
ficie
ncy
()
EVM
()
Typical EVM vs Output Power of CGH55015F550 GHz 565GHz 580GHz
550 GHz (EVM) 565 GHz (EVM) 580 GHz (EVM)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
00
20
40
60
15 20 25 30 35
Dra
inEf
ficie
ncy
()
EVM
()
Power Output (dBm)
5 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
NoteMER is the metric of choice for cable systems and can be related to EVM by the following equation EVM() = 100 x 10 ^ -((MERdB + MTAdB)20) MTA is the ldquomaximum-to-average constellation power ratiordquo which varies with the modulation type MTA = 0 for BPSK and QPSK 255 for 16QAM and 8QAM-DS 368 for 64QAM and 32QAM-DS 423 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit
NoteUnder DOCSIS 60 MHz Channel BW 64 QAM PN23 Filter Alpha 018 PAR = 67dB
33
34
35
36
37
38
39
40
15 20 25 30 35 40Power Output (dBm)
Mod
ulat
ion
Erro
rRat
io(d
B)
550 GHz
565 GHz
580 GHz
00
02
04
06
08
10
12
14
16
15 20 25 30 35 40
Power Output (dBm)
EVM
()
550 GHz
565 GHz
580 GHz
6 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
4 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical WiMAX Performance
Drain Efficiency and Gain vs Power Output measured in the CGH55015-AMPVDD = 28 V IDQ = 115 mA 80216-2004 OFDM PAR = 98 dB
Typical EVM and Drain Efficiency vs Output Power measured in the CGH55015-AMP at 550 GHz 565 GHz 580 GHz 80216-2004 OFDM PAR=98 dB
Note Under 80216 OFDM 35 MHz Channel BW 14 Cyclic Prefix 64 QAM Modulated Burst Symbol Length of 59 Coding Type RS-CC Coding Rate Type 23 PAR = 98 dB 001 Probability on CCDF
20
25
30
35
8
10
12
14
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Gain EVM and Drain Efficiency vs Output PowerVdd = 28 V Idq=115 mA
550 GHz (Gain) 565 GHz (Gain) 580 GHz (Gain)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
0
2
4
6
15 20 25 30 35
Dra
inEf
ficie
ncy
()
Gai
n(d
B)
Power Output (dBm)
20
25
30
35
80
100
120
140
Dra
inEf
ficie
ncy
()
EVM
()
Typical EVM vs Output Power of CGH55015F550 GHz 565GHz 580GHz
550 GHz (EVM) 565 GHz (EVM) 580 GHz (EVM)
550 GHz (Efficiency) 565 GHz (Efficiency) 580 GHz (Efficiency)
0
5
10
15
00
20
40
60
15 20 25 30 35
Dra
inEf
ficie
ncy
()
EVM
()
Power Output (dBm)
5 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
NoteMER is the metric of choice for cable systems and can be related to EVM by the following equation EVM() = 100 x 10 ^ -((MERdB + MTAdB)20) MTA is the ldquomaximum-to-average constellation power ratiordquo which varies with the modulation type MTA = 0 for BPSK and QPSK 255 for 16QAM and 8QAM-DS 368 for 64QAM and 32QAM-DS 423 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit
NoteUnder DOCSIS 60 MHz Channel BW 64 QAM PN23 Filter Alpha 018 PAR = 67dB
33
34
35
36
37
38
39
40
15 20 25 30 35 40Power Output (dBm)
Mod
ulat
ion
Erro
rRat
io(d
B)
550 GHz
565 GHz
580 GHz
00
02
04
06
08
10
12
14
16
15 20 25 30 35 40
Power Output (dBm)
EVM
()
550 GHz
565 GHz
580 GHz
6 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
5 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
NoteMER is the metric of choice for cable systems and can be related to EVM by the following equation EVM() = 100 x 10 ^ -((MERdB + MTAdB)20) MTA is the ldquomaximum-to-average constellation power ratiordquo which varies with the modulation type MTA = 0 for BPSK and QPSK 255 for 16QAM and 8QAM-DS 368 for 64QAM and 32QAM-DS 423 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit
NoteUnder DOCSIS 60 MHz Channel BW 64 QAM PN23 Filter Alpha 018 PAR = 67dB
33
34
35
36
37
38
39
40
15 20 25 30 35 40Power Output (dBm)
Mod
ulat
ion
Erro
rRat
io(d
B)
550 GHz
565 GHz
580 GHz
00
02
04
06
08
10
12
14
16
15 20 25 30 35 40
Power Output (dBm)
EVM
()
550 GHz
565 GHz
580 GHz
6 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
6 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55015F1P1VDD = 28 V IDQ = 115 mA
Min
imum
Noi
se F
igur
e (d
B)
Noi
se R
esis
tanc
e (O
hms)
MA
G (d
B)
K F
acto
r
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
7 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Source and Load Impedances
Frequency (MHz) Z Source Z Load
5500 87 ndash j302 216 ndash j47
5650 102 ndash j269 242 - j55
5800 123 ndash j243 265 - j75
Note 1 VDD = 28V IDQ = 115 mA in the 440166 packageNote 2 Impedances are extracted from the CGH55015-AMP demonstration amplifier and are not source and load pull data derived from the transistor
Electrostatic Discharge (ESD) Classifications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A gt 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 lt 200 V JEDEC JESD22 C101-C
D
Z Source Z Load
G
S
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
8 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator Description Qty
C1 CAP 12pF +-01 pF 0603 ATC 600S 1
C2 CAP 03pF +-005 pF 0402 ATC 600L 1
C9 CAP 05pF+-005pF 0603 ATC 600S 1
C4C11 CAP 18pF +-5 0603 ATC 600S 2
C5C12 CAP 39pF +-5 0603 ATC 600S 2
C6C13 CAP CER 180pF 50V +-5 C0G 0603 2
C7C14 CAP CER 01UF 50V +-10 X7R 0805 2
C8 CAP 10UF 16V SMT TANTALUM 1
C15 CAP 10UF plusmn10 100V 1210 X7R 1
C16 CAP 33UF 100V ELECT FK SMD 1
R1 RES 116W 0603 1 562 OHMS 1
R2 RES 116W 0603 1 22 OHMS 1
J1 HEADER RTgt PLZ 1 CEN LK 5 POS 1
J3J4 CONN SMA FLANGE 2
- PCB RO4350B Er = 348 h = 20 mil 1
- CGH55015 1
CGH55015-AMP Demonstration Amplifier Circuit
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
9 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
CGH55015-AMP Demonstration Amplifier Circuit Schematic
CGH55015-AMP Demonstration Amplifier Circuit Outline
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
10 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Typical Package S-Parameters for CGH55015(Small Signal VDS = 28 V IDQ = 115 mA angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
500 MHz 0909 -12516 1756 10752 0026 2086 0330 -9581
600 MHz 0903 -13472 1515 10124 0027 1525 0318 -10371
700 MHz 0898 -14224 1328 9596 0027 1066 0312 -10987
800 MHz 0895 -14834 1179 9138 0027 676 0309 -11477
900 MHz 0893 -15343 1058 8730 0028 337 0310 -11875
10 GHz 0891 -15778 959 8358 0028 034 0312 -12207
12 GHz 0889 -16493 806 7689 0028 -492 0320 -12735
14 GHz 0888 -17072 694 7090 0027 -946 0332 -13153
16 GHz 0888 -17564 608 6534 0027 -1351 0347 -13509
18 GHz 0888 -17999 541 6010 0027 -1720 0362 -13830
20 GHz 0889 17604 486 5509 0026 -2060 0378 -14133
22 GHz 0889 17235 442 5024 0025 -2376 0394 -14427
24 GHz 0890 16884 405 4553 0025 -2670 0410 -14716
26 GHz 0891 16546 373 4093 0024 -2944 0426 -15004
28 GHz 0891 16216 346 3641 0024 -3197 0441 -15292
30 GHz 0892 15890 323 3195 0023 -3432 0455 -15581
32 GHz 0893 15567 303 2755 0022 -3645 0469 -15873
34 GHz 0893 15243 285 2319 0021 -3838 0482 -16168
36 GHz 0894 14918 270 1885 0021 -4007 0494 -16466
38 GHz 0894 14589 256 1453 0020 -4152 0506 -16768
40 GHz 0894 14254 244 1022 0019 -4271 0516 -17074
41 GHz 0895 14085 238 807 0019 -4319 0521 -17229
42 GHz 0895 13914 233 591 0019 -4359 0526 -17385
43 GHz 0895 13740 228 375 0018 -4392 0530 -17543
44 GHz 0895 13565 223 158 0018 -4416 0535 -17702
45 GHz 0895 13388 218 -059 0018 -4432 0539 -17862
46 GHz 0895 13208 214 -277 0017 -4438 0543 17975
47 GHz 0895 13026 210 -496 0017 -4435 0546 17811
48 GHz 0895 12841 206 -715 0017 -4423 0550 17645
49 GHz 0895 12653 203 -936 0017 -4402 0553 17477
50 GHz 0895 12463 199 -1158 0016 -4371 0556 17307
51 GHz 0895 12269 196 -1381 0016 -4330 0559 17135
52 GHz 0895 12072 193 -1605 0016 -4281 0561 16960
53 GHz 0895 11873 190 -1831 0016 -4222 0564 16783
54 GHz 0895 11670 187 -2059 0016 -4156 0566 16604
55 GHz 0895 11463 184 -2289 0016 -4083 0568 16421
56 GHz 0895 11253 181 -2520 0016 -4005 0570 16236
57 GHz 0895 11039 179 -2753 0016 -3922 0572 16047
58 GHz 0895 10822 177 -2989 0016 -3835 0574 15855
59 GHz 0895 10600 174 -3227 0016 -3748 0575 15660
60 GHz 0895 10375 172 -3467 0016 -3662 0576 15461
To download the s-parameters in s2p format go to the CGH55015F1P1 Product Page click on the documentation tab
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
11 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Dimensions CGH55015F1 (Package Type mdash 440166)
Product Dimensions CGH55015P1 (Package Type mdash 440196)
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
12 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Product Ordering Information
Order Number Description Unit of Measure Image
CGH55015F1 GaN HEMT Each
CGH55015P1 GaN HEMT Each
CGH55015-TB Test board without GaN HEMT Each
CGH55015-AMP Test board with GaN HEMT installed Each
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639
13 CGH55015F1_P1 Rev 40
Cree Inc4600 Silicon Drive
Durham North Carolina USA 27703USA Tel +19193135300
Fax +19198692733wwwcreecomrf
Copyright copy 2008-2015 Cree Inc All rights reserved The information in this document is subject to change without notice Cree and the Cree logo are registered trademarks of Cree Inc
Disclaimer
Specifications are subject to change without notice Cree Inc believes the information contained within this data sheet to be accurate
and reliable However no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use No license is granted by implication or otherwise under any patent or patent rights of Cree Cree makes no warranty
representation or guarantee regarding the suitability of its products for any particular purpose ldquoTypicalrdquo parameters are the average
values expected by Cree in large quantities and are provided for information purposes only These values can and do vary in different
applications and actual performance can vary over time All operating parameters should be validated by customerrsquos technical experts
for each application Cree products are not designed intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning construction maintenance or direct operation of a nuclear facility
For more information please contact
Cree Inc4600 Silicon DriveDurham North Carolina USA 27703wwwcreecomRF
Sarah MillerMarketingCree RF Components19194075302
Ryan BakerMarketing amp SalesCree RF Components19194077816
Tom DekkerSales DirectorCree RF Components19194075639