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132
CHAPTER IV
SYNTHESIS AND CHARACTERIZATION OF METAL IONS
DOPED ZINC SELENIDE NANOPARTICLES
4.1 Introduction
Introducing impurity atoms into a semiconductor host leads to an
increase in the free-carrier concentration. In n-type semiconductors, free
electrons in the conduction band are majority charge carriers, whereas holes
in the valence band are majority carriers in p-type semiconductors. Shallow
donors and acceptors have a much smaller ionization energy compared to the
bandgap energy of the host semiconductor; hence, they can readily contribute
to electrical conductivity.
The optical properties of impurity-doped nanocrystals have
attracted much attention. Since from both electronic states and
electromagnetic fields are modified, optical properties of impurities may
change drastically in nanostructures. Since the first report of ZnS:Mn2+
nanoparticles, several studies on doped metal chalcogenide quantum dots
have appeared, including new preparation methods, luminescence properties
and potential applications. For doped nanoparticles, the most fundamentally
interesting results are the luminescence enhancement and the lifetime
133
shortening of the Mn2+ emission with decreasing size. The first synthesis of
ZnS: Mn2+ quantum dots carried out by Bhargava et al., was made in toluene
with diethyl salt precursors and methacrylic acid as surfactant [144]. They
obtained particles with two emission peaks (265 and 584 nm) and 18%
quantum yield at room temperature. Since then a lot of syntheses both in
water and organic solvents have been carried out with changing surfactants
such as hexametaphosphate, thioglycerol, polyethylenoxide and
hydroxypropyl cellulose. ZnS:Mn2+ were synthesized in block copolymer
nano reactors and zeolites and with different amounts of Mn2+ to investigate
the influence of the dopant concentration on the fluorescence properties. Qi
Xiao et al., [145] synthesized Mn doped ZnS quantum dots and thioglycolic
acid was used as a stabilizing agent. The effects of Mn2+ concentration on
photoluminescence of Mn:ZnS quantum dots have been investigated. The
nonlinear properties of the Mn doped ZnSe quantum dots have been studied
by Deepak More et al [146]. Mariya Hardzei had successfully prepared the
Mn2+ doped ZnSe quantum dots and studied the effect of pH on the
luminescence property [147].
The synthetic challenges of doping and the intentional introduction
of impurities into a semiconducting material is a common approach for tuning
the electronic, optical, mechanical and magnetic properties of the materials
[148 – 151]. Since, it had provided fertile grounds for the investigation of the
basic chemistries of homogeneous nucleation and crystal growth in the
presence of impurities.
134
In this chapter, ZnSe quantum dots have been synthesized by
doping transition metal manganese (Mn2+) and the alkaline rare earth metal
magnesium (Mg2+). Since, Mn2+ and Mg2+ doped nanocrystals have been
extensively investigated for use in various applications other than biomedical
labeling, such as displays, sensors and lasers [152, 153]. These dopants could
be potential candidates for fluorescent labeling agents especially in biology.
The aim of the present work is to study the effect of these dopants
on the optical and structural properties of ZnSe quantum dots and to achieve
the size confinement and monodispersity. N-Methylaniline was used as a
surface passivating organic ligand.
4.2 Synthesis and Characterization of Manganese doped
Zinc Selenide quantum dots
Much effort has been made to realize Mn2+ doping in II – VI
semiconductors in order to produce new materials for various applications
ranging from solar cell to spintronics [154, 155]. Mn2+ acts as a paramagnetic
centre (s=5/2) which substitutes for the group II cation in the semiconductor
lattice. This interaction between the semiconductor and the Mn2+, results in a
new class of materials with interesting magnetic and optical properties which
have not been observed in the bulk. ZnSe quantum dots doped with Mn2+ ions
are intensively studied due to its unique optical and magneto – optical
properties [156 – 158]. ZnSe: Mn2+ quantum dots may be used as nontoxic
fluorescent markers in biomedicine or sensors.
135
4.2.1 Synthesis
All the reagents were of analytical grade and used without further
purification. 0.2 M solution of zinc acetate monohydrate
[(CH3COO2)Zn·H2O)] was prepared in 20 ml of distilled water and 0.02 M
manganese sulphate (MnSO4) was added to the solution. After that, 20 ml of
solution of 0.2 M sodium selenite (Na2SeO3·5H2O) solution was added.
Finally, 0.2 ml NMA was added drop wise to the same solution as a capping
agent. It is stirred vigorously for 36 h using magnetic stirrer. The resultant
product was dried at 180 ◦C for 10 h. The synthesized product has been
characterized by XRD, UV-Vis, PL, FTIR and TEM.
4.2.2 Optical studies
UV- visible absorption spectrum of N - Methylaniline passivated
ZnSe: Mn2+ is shown in Figure 4.1(a). It exhibits absorption edge at 300 nm
which is blue shifted from that of the bulk ZnSe whose absorption edge is
located at 460 nm [159]. The band gap of Mn2+ doped ZnSe are derived based
on the well-established equation [eq.(1)].
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00.00.51.01.52.02.53.03.54.04.55.05.56.0
(αhν
)2
hν
(4.2eV)
(a) (b)
Figure 4.1 (a) UV - Visible absorption spectrum and (b) bandgap plot of NMA passivated ZnSe:Mn2+ Quantum dots
136
( )ν
να
hEhA g 2
1−
= (1)
where α , Eg and A are the absorption coefficient, band gap and constant
respectively. By extrapolating the linear region in the plots of versus 2)( ναh
νh (Figure 4.1. (b)), the band gap value is estimated as 4.2 eV. But the band
gap of the bulk ZnSe is 2.7 eV. This blue shift indicates the quantum
confinement of the particles. The radius of the nanocrystals R can be
calculated using the following equation [eq.(2)].
2 2 2
2
1 1 1.82g
e h
eE E smallertermsR m m R
πε
⎡ ⎤= + + − +⎢ ⎥
⎣ ⎦
h (2)
where E is the energy of the first excited state, Eg = 2.7 eV is the band gap
energy of bulk ZnSe, me* and mh* are the effective masses of the electron
and hole in ZnSe (me = 0.15mo, mh = 0.66mo, where mo = 9.11x10-28gm, the
free electron mass)[152] respectively, є = 9.2, is the semiconductor dielectric
constant, ћ = 6.58 x 10-16 eV is the reduced Plank constant and e = 1.6 x
10-19 C is the electron charge. The size of the particle is calculated as 2.7 nm
which is almost equal to the value observed in the TEM.
Photoluminescence spectrum of N-Methylaniline passivated ZnSe:
Mn2+ quantum dots is shown in Figure 4.2. The excitation wavelength used
was at 250 nm and the emission peaks were found at different wavelengths
such as 376 nm, 400 nm, 422 nm, 505 nm, 609 nm. The sharp band edge
137
emission is centered at 376 nm, the peak centered at 400 nm and 422 nm are
due to the trap state emission. The other peak centered at 505 nm is usually
defect related and may originate from the self activated centers and the
broadened peak observed at 609 nm is due to the deep level formed by the
incorporation of Mn2+ in the ZnSe quantum dots [160, 161].
Similar emission was observed by Deepak More, the strong blue
emission observed at 425 nm corresponds to band edge emission and the
weak band emission around 585 nm is attributed to trap state [146]. Mariye
Hardezi reported that, the emission at 480 nm belongs to ZnSe excitionic
radiative recombination, while the other band at 590 nm was due to the
radiative recombination through d-d levels of Mn2+ ion incorporated to ZnSe
matrix [147]. In general, when Mn2+ is placed substitutionally on a cation
sites in a II – VI semiconductor host lattice, degenearices in its internal
electronic structure are lifted by the crystal field. This produces localized
levels (4T1 and 6A1) that are within the energy gap of the nanocrystals.
In the present work, the emission band centered at 609 nm is
attributed to (4T1 and 6A1) transition within the 3d shell of Mn2+. When
Mn2+ ions were incorporated into the ZnSe lattice and substituted for host
cation sites, the mixing between the s – p electrons of the host ZnSe and the d
electrons of Mn2+ occurred and made the forbidden transition of 4T1 and 6A1
partially allowed, resulting in the characteristic emission of Mn2+.
138
250 300 350 400 450 500 550 600 650 7000
1x105
2x105
3x105
4x105
5x105
6x105
7x105
8x105
Inte
nsity
Wavelength (nm)
376 400
422 505
609
Figure 4.2 Photoluminescence spectrum of NMA passivated
ZnSe:Mn2+ Quantum dots
4.2.3 Structural analysis
20 30 40 50 600
100
200
300
400
500
600
Inte
nsity
(cps
)
2θ (degree)
(311
)
(400
)
(331
)
(511
)(440
)
(531
)
(220
)
Figure 4.3 XRD pattern of NMA passivated ZnSe:Mn2+ Quantum dots
139
XRD pattern of N-Methylaniline passivated ZnSe:Mn2+ quantum
dots is shown in Figure 4.3. All the reflection peaks can be indexed to cubic
system with the lattice constant of (a = b = c = 5.65Å), which is in good
agreement with the reported data (JCPDS card no: 010690). No other peaks
related to impurities were detected.
4.2.4 Morphological study
Figure 4.4 (a) shows the TEM micrograph of N-Methylaniline
passivated ZnSe: Mn2+quantum dots. The dispersed quantum dots can be
clearly seen, size of the quantum dots are in the range of 2 – 5 nm and the
size distribution was fairly narrow as illustrated by particle size histograms
shown in Figure 4.4 (b) and most of the quantum dots are in the size of
2 nm . High resolution transmission electron microscopy images are shown in
Figure 4.4 (c). Higher magnification images showed that the size of the
particles is about 2 – 5 nm. Also it indicates that the quantum dots are
crystalline. Figure 4.4 (d) is a typical selected – area electron diffraction
(SAED) pattern of the ZnSe: Mn2+ Quantum dots. These pattern spots can be
readily indexed as the (311), (400), (331) , (440) , (511) , (531) planes for the
cubic structure of ZnSe.
140
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.50
5
10
15
20
25
30
Num
ber o
f par
ticle
s
Particle size (nm )
(a) (b)
(c) (d)
Figure 4.4 (a) TEM image, (b) Histogram of particle size distribution, (c) HRTEM images and (d) SAED image of N- Methylaniline passivated ZnSe:Mn2+ Quantum dots
Similarly, Obiwataobi S. Oluwafemi et al has successfully
synthesized Hexadecylamine capped Mn doped wurtzite CdSe naonoparticles
with an average size of about 4.75 nm [162]. R. Shankar et al., had
synthesized Mn2+ doped ZnS nanoparticles with the size of about 2 – 3 nm by
chemical precipitation method [163]. JunanLiu et al., reported that Mn2+
doped ZnSe quantum dots by nucleation doping method with the diameter of
about 4 nm [164].
141
4.2.5 Functional properties
Figure 4.5 EDAX spectrum of NMA passivated ZnSe:Mn2+ Quantum
dots
4000 3500 3000 2500 2000 1500 1000 500
0
20
40
60
80
100
Tran
smit
tan
ce (
%)
Wavenumber (cm-1)
1579
1025
3403
Figure 4.6 FTIR spectrum of NMA passivated ZnSe:Mn2+ Quantum dots
142
Figure 4.5 describes the EDAX spectrum of Mn2+ doped ZnSe
nanoparticles. It indicates that the nanoparticles contain Zn, Se and Mn. The
atomic percentage of Zn : Se : Mn is 55.19 : 43.12 : 1.69. This matches the
stoichiometric ratio quite well. It is also noted that no impurity in the
nanoparticles was observed within the detection limit of EDAX.
FTIR spectrum of Mn2+ doped ZnSe is shown in Figure 4.6. KBr
pellet technique was employed for the sample preparation. A KBr pellet is
prepared by grinding the solid ample with solid potassium bromide and
applying pressure to the dry mixture. KBr is chosen because it is transparent
to the infrared radiation. This FTIR analysis is undertaken in order to establish
the chemisorbed N-Methylaniline on the surface of nanoparticles. This
analysis could provide the evidence that N-Methylaniline act as a ligand to
control the size of the nanoparticles. In the FTIR spectrum the peak observed
at 3403cm-1, 1579 cm-1and 1025 cm-1 are attributed due to N-H and C-N
stretching of N-Methylaniline. This clearly confirms that N-Methylaniline
cover the surface of ZnSe: Mn2+ nanoparticles.
4.3 Synthesis and Characterization of Magnesium doped Zinc
Selenide quantum dots
It is well known that the electronic structure of a given
semiconductor is largely affected by doping effects and particle size. In the
case of transition metal doping, the localized d – levels would be introduced
in the band gap, which can decrease the photo threshold energy of
semiconductors but also serve as the recombination centers for photo induced
charge carriers [165].
143
Alternatively, alkaline earth metal ions have no localized d – levels,
which can be taken as the candidate dopants for simplifying the correlation
between structures and photo catalytic properties.
Venkatachalem et al., [166, 167] found that doping of TiO2
nanoparticles with Mg2+ produces higher photo catalytic activities than those
of undoped TiO2 nanoparticles. Nevertheless, the entry of alkaline metal ions
into the TiO2 lattice also results in the creation of significant lattice defects
because of the charge compensation and the ionic radius mismatch between
Mg2+ and Ti4+ which may put huge uncertainties to the origin of photo
activites. Mg2+ has an ionic radius of 0.57Å, which is very close to that 0.60 Å
for Zn2+ in tetrahedral coordination [168]. It is noteworthy that the doping of
Mg2+ is not reported in ZnSe, rather many reports had been documented with
ZnO. Since Mg2+ is expected to be straight forward for generating
nanocrystals with tunable optoelectronic properties which are promising for
use in solution processable devices [169]. In the present work, Mg doped
ZnSe nanoparticles were synthesized using N-Methylaniline as an organic
ligand by chemical method and the functional characteristics have been
investigated.
4.3.1 Synthesis
All the chemicals were of analytical grade and used for the
synthesis as such. In a typical synthesis, 0.2 M solution of zinc acetate
144
monohydrate [(CH3COO2) Zn.H2O)] was dissolved in 20ml of distilled water
under magnetic stirring. then, 0.02 M magnesium sulphate (MgSO4) was
added to the solution and subsequently 20 ml solution of 0.2 M Sodium
selenite (Na2SeO3.5H2O) was added. Finally, 0.2 ml NMA was added drop
wise to the same solution as a capping agent. The mixture was stirred
vigorously for 36 hours using magnetic stirrer. The role of NMA is to stabilize
the particles against aggregation. The resultant product was dried at 180°C for
10 hours. Optical and Morphological properties of the synthesized product
were studied by using UV-Vis spectrum, PL studies, XRD, TEM analysis,
FTIR and EDAX.
4.3.2 Optical studies
Optical absorption properties of Mg2+ doped ZnSe quantum dots
were measured at room temperature. Figure 4.7 (a) shows an intense band to
band absorption in the UV region. In the Figure 4.7 (b) the absorption edge is
observed at 350 nm and the bandgap value is found to be 3.56 eV. The
observation of the blue shift in the band gap implies that Mg2+ was
successfully incorporated into cubic ZnSe lattices. Studies on Mg2+ doped
ZnO thin films with wurtzite structure indicate that the band gap of the film
can be continuously tuned from 3.3 eV to 4.0 eV by adjusting Mg2+ content
[170].
145
Figure 4.7 (a) UV - Visible absorption spectrum of NMA passivated
ZnSe:Mg2+ Quantum dots
Figure 4.7 (b) Bandgap plot of NMA passivated ZnSe:Mn2+
Quantum dots
146
Figure 4.8 Photoluminescence spectrum of NMA passivated
ZnSe:Mg2+ Quantum dots
Photoluminescence spectra of Mg2+ doped ZnSe nanoparticles is
shown in Figure 4.8. Photoluminescence emission peaks were obtained for the
excitation wavelength of 255 nm. The near band edge emission peak was
observed at 400 nm and the emission peak was broadened. The significant
blue shift was observed in the nanoparticles due to the quantum confinement.
The difference between the absorption onset and emission peak was around
50 nm. This is due to the deep trap state emission of the smaller size particles.
Also the defects could be attributed to the vacancy of selenium in the
nanoparticles. The trap level emission was observed at 645 nm and is due to
impurity levels in ZnSe. According to the ‘self-purification’ theory proposed
147
by Gustavo et al., [171] most of the impurity atoms are located on or near the
surface of the semiconductor nanoparticles. The existence of surface states
acts as trap centers for excitons. It is significant that impurities are actually
embedded inside the ZnSe for the PL enhancement. Based on the above fact,
the surface passivation of N-Methylaniline make an effect on the enhanced PL
intensity of the Mg2+ doped ZnSe. The above factors can be explained by the
following steps: (i) the first added Zn2+ ions were used for nucleation. Since
the Mg2+ ions were mostly located on or near the surface, the surface states
probably trapped electrons and this lead to the non - radiative recombination,
resulting in the reduction of quantum yields. (ii) For the passivation layer of
epitaxial growth, additional Zn2+ ions reacted with the N-Methylaniline in the
reaction solution, which contributes to the enhanced PL intensity.
Y.S.Wang et al., [172] synthesized Mg2+ doped zinc oxide
nanocrystals and investigated the optical properties.The photoluminescence
spectra of Mg2+ doped ZnO nanocrystals consists of band edge and defect
states emission bands. The defect band is believed to be due to deep traps and
becomes dominant at high levels of doping. PL excitation spectra, measured
with detection at a wavelength, where the deep trap emission is maximum,
reveal a linear increase in the peak energy with the increasing Mg2+ doping
levels upto 10%. The dependence of the optical band gap on Mg2+
concentration derived from absorption and the PL spectra correspond well
with each other. Tae Hyun Kim et al., [173] fabricated Mg2+ doped ZnO thin
148
flims by laser ablation method and studied the PL spectra for different Mg2+
concentrations. The peak of near band edge emission (NBE) shifted to blue
with increase in the content of Mg2+ while the intensity of defect emission
decreased dramatically. On the other hand, the red emission which is due to
the defects in the films increased substantially with Mg2+ content.
From the PL spectrum (Figure 4.8) a weak emission is observed at
645 nm. The concentration of the dopant Mg2+ is less in ratio, as observed in
the Table. 4.1, resulting low intensity defect level emission.
4.3.3 Structural studies
Figure 4.9 XRD pattern of NMA passivated ZnSe:Mg2+ Quantum dots
Figure 4.9 shows the XRD pattern of Mg doped ZnSe nanoparticles.
The peaks are readily indexed to the cubic phase of ZnSe. It is well matched
with standard JCPDS card no 88-2345. Peaks related to magnesium are not
149
observed in the pattern indicating that magnesium atoms are not incorporated
into the cubic lattice of ZnSe. Magnesium ions may be located at interstitial
site or vacancies of zinc or selenium. No other peak related to impurities is
observed.
4.3.4 Morphological Studies
TEM images of Mg doped ZnSe nanoparticles shown in Figure
4.10. The images clearly depict the formation of nanoparticles. The average
size of the nanoparticles is 15 nm and some of the particles were in the shape
of triangle and hexagonal. The formation of different shapes in the same
sample is due to the influence of dopant ion and capping agent. The lattice
fringes are clearly seen in the HRTEM image and it clearly depicts the
formation of single crystalline Mg2+ doped ZnSe nanoparticles. SAED pattern
is shown in the Figure 4.11. Spot patterns were indexed to cubic structure of
the ZnSe.
Figure 4.10 TEM images of NMA passivated ZnSe:Mg2+ Quantum dots
150
Figure 4.11 HRTEM and SAED pattern of NMA passivated
ZnSe:Mg2+ Quantum dots.
Y. S. Wang et al., [172] of Mg2+ doped ZnO nanocrystals and TEM
analysis reveals that the synthesized particles were of sphereical in nature
with size in the range of 9 – 12 nm. YeFeng Yang et al., [169] synthesized
Mg2+ doped ZnO nanocrystals. 5% of Mg2+ dopants on ZnO results a tetrapod
structures. The tetra pods were 3.6 nm in diameter.
4.3.5 Functional characteristics and elemental analysis
FTIR spectrum of Mg2+ doped ZnSe nanoparticles as shown in
Figure 4.12. Functional group vibrations confirm the formation of
N-Methylaniline passivated Mg2+ doped ZnSe nanoparticles. The vibrations at
3428 cm-1 and 1655 cm-1 were corresponds to the N-H stretching of
chemisorbed N-Methylaniline molecule. In addition, the vibration at 1032
cm-1 corresponds to the C-N stretching, it clearly evident the surface
passivation of N-Methylaniline during the formation of ZnSe nanocrystals.
151
4 0 0 0 3 5 0 0 3 0 0 0 2 5 0 0 2 0 0 0 1 5 0 0 1 0 0 0 5 0 00
2 0
4 0
6 0
8 0
1 0 0
1655
Tran
smitt
ance
(%)
W a v e n u m b e r ( c m -1 )
3428
1032
Figure 4.12 FTIR spectrum of NMA passivated ZnSe:Mg2+ Quantum
dots.
The EDAX spectrum of Mg doped ZnSe nanoparticles shown in
Figure 4.13. Strong peaks were observed for the energy levels of Zn, Se and
Mg. It is apparently evident the incorporation of Mg into the ZnSe. Moreover,
the atomic percentage of Mg is less than 2% indicating that the Mg ion is not
sufficient to replace Zn ion and it may be located as an impurity in the lattice
of ZnSe. No other signals were detected in EDAX spectrum.
Figure 4.13 EDAX spectrum of NMA passivated ZnSe:Mg2+ Quantum
dots.
152
Table 4.1 – Elemental analysis obtained by EDAX
Element Line Weight % Atom % Formula
Mg K 1.18 1.56 Mg
Zn K 37.99 42.33 Zn
Se K 60.83 56.11 Se
Total 100.00 100.00
4.4 Conclusions
In summary, transition metal Mn2+ and alkaline rare earth metal
Mg2+ doped ZnSe quantum dots have been synthesized by wet chemical route.
N-Methylaniline was used as a surface passivating ligand to obtain size
confined ZnSe quantum dots. The synthesized metal ions doped ZnSe
quantum dots have been characterized by UV – Visible absorption,
photoluminescence, XRD, TEM, FTIR and EDAX analyses. Strong quantum
confinement effect have been observed in the both samples of Mn2+ and Mg2+
doped ZnSe quantum dots with the band gap of 4.2 eV and 3.56 eV,
respectively. Structural studies show cubic ZnSe formation. Surface
morphology of nanoparticle is clearly seen in the TEM studies. Presence of
N-Methylaniline in the synthesized ZnSe is clearly evidenced from the
functional peaks of FTIR spectrum. The existence of metal ion with their
atomic percentage is observed from EDAX analysis.