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RFIC Design
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
MICROWAVE INTERGRATED CIRCUITS
1
Huynh Phu Minh Cuong, PhD [email protected]
Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 2
Instructor: Cuong Huynh (PhD)
Office: 112 B3 , HCMUT
Office Hours: Friday 2:00-4:00 PM
E-mail: [email protected]
Textbook:
[1] David M. Pozar, “Microwave Engineering”, John Wiley & Sons, Inc, 4th ed.,
2012.
References:
[2] Gonzalez, “Microwave Transistor Amplifiers”, Prentice Hall, 2nd ed. 1997
[3] I.D. Robertson, S. Lucyszyn, “RFIC and MMIC Design and Technology”, The
Institution of Electrical Engineers, London, 2001
[4] Vũ Đình Thành, “Mạch Siêu Cao Tần”, NXB ĐHQG, 2006
[5] Vũ Đình Thành, “Kỹ Thuật Siêu Cao Tần”, NXB ĐHQG, 2004.
MICROWAVE INTERGRATED CIRCUITS
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 3
Learning outcomes Understand effects of noise and nonlinearity distortion on microwave
systems and system parameters such as noise figure, input/output referred
noise, 1-dB compression point and third-order intercept point.
Analyze various microwave transceiver architectures and design system
parameters for microwave transceivers.
Analyze, design, fabricate and measure microwave passive components
such as power divider/combiner, directional coupler, hybrid coupler, circulator
and T/R switch.
Analyze, design, fabricate and measure microwave filters using distributed
elements.
Analyze, design, fabricate and measure microwave amplifiers including low
noise amplifier, broadband amplifier and power amplifier.
Analyze, design, fabricate and measure microwave mixers and oscillators.
Use microwave simulation soft-wares such as ADS, Cadence and SDH, and
equipments such as network analyzer, spectrum analyzer, synthesizer and noise
figure analyzer.
MICROWAVE INTERGRATED CIRCUITS
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 4
Grading
Homework 20% You are encouraged to work together with your classmates
on the homework. HW can be turned in via Email.
No late homework will be graded
Final Project 30% Report and PowerPoint presentation are required
Final Exams 50% Closed book
One single-sided A4 of notes is allowed
MICROWAVE INTERGRATED CIRCUITS
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 5
Outline
Chapter 1: Fundamentals of Microwave Engineering
Chapter 2: System Parameters and Transceiver
Architectures
Chapter 3: Power Dividers and Directional Couplers
Chapter 4: Microwave Amplifier
Chapter 5: Oscillators and Mixers
Chapter 6: Microwave Filters
MICROWAVE INTERGRATED CIRCUITS
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 6
Huynh Phu Minh Cuong [email protected]
Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Chapter 1
Fundamentals of Microwave Engineering
MICROWAVE INTERGRATED CIRCUITS
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 7
Introduction
… and emerging applications !
Integrated Circuits (IC)
Is … the key driver behind the scene !
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 13
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 14
1.1 Fundamentals of microwave engineering
Transmission lines
. .( ) . .x xV x V e V e
0
1 ( )( )
1 ( )
xZ x Z
x
2( ) ( ). dx l e
0
0
( ) L
L
Z Zl
Z Z
00
0
. . ( )( )
. . ( )
L
L
Z j R tg dZ x R
R j Z tg d
. .
0 0
( ) l lV VI l e e
Z Z
1
1S VSWR
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 15
1.1 Fundamentals of microwave engineering
Smith chart
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 16
1.1 Fundamentals of microwave engineering
Impedance Matching
Using lump elements
Using transmission line
ADS Smith chart tool
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 17
1.1 Fundamentals of microwave engineering
Scattering Parameters
At microwave regime: S-parameters
matrix, defined in terms of traveling
waves, is used instead.
The scattering matrix represents the
relation between the voltage incident
waves on the ports to voltage reflected
wave from the ports.
S-parameters are measured with
matched loads rather than open- or
short-circuits.
At microwave frequencies, matched
loads are relatively easy to realize.
S-parameters are measured using
Vector Network Analyzer (VNA).
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
S-Parametter Definition
V+n is the incident voltage wave on port n
V− n is the reflected voltage wave from port n.
The scattering matrix, or [S] matrix, is defined in relation to these incident
and reflected voltage waves.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
S-Parametter Definition
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Example: Find [S]
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 23
1.2 Technology and device for microwave integrated circuits
Target: smaller size, lighter weight, lower power requirements, lower cost,
and increased complexity.
Microwave integrated circuits (MICs) Technology replace bulky and
expensive waveguide and coaxial components with small and inexpensive planar
components.
MIC technology has advanced to the point where complete microwave
subsystems, such as receiver front ends and radar transmit/receive modules, can be
integrated on a chip that is only a few square millimeters in size.
Hybrid MICs
MIC
MMIC/RFIC Hybrid Microwave Integrated Circuits
Monolithic Microwave Integrated Circuits
Radio Frequency Integrated Circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 24
1.2 Technology and device for microwave integrated circuits
Hybrid MICs MMIC/RFIC
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 25
The metal–oxide–semiconductor field-effect
transistor (MOSFET) was first patented
by Julius Edgar Lilienfeld in 1925, well before
the invention of BJT.
Due to the fabrication limitation, MOSFET
has not been used until the early years of 1960s.
CMOS (Complementary MOS p- and n-type
device) was patented by Frank Wanlass in 1967,
initiating a revolution in the semiconductor
industry.
CMOS initially dominates in the digital
circuit/systems while others for analog.
Why CMOS now ? Low cost, high integration
and solution for SOC.
1.2 Technology and device for microwave integrated circuits
Technology CMOS
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 26
1.2 Technology and device for microwave integrated circuits
CMOS Technology
CMOS Transistors
Interconnect
Diodes
Resistors
Capacitors
Inductors
Bipolar Transistors
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 27
1.2 Technology and device for microwave integrated circuits
CMOS Technology Intel 45 nm CMOS Process
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 28
1.2 Technology and device for microwave integrated circuits
Microwave Devices
DIODES
BIPOLAR JUNCTION TRANSISTORS
FIELD EFFECT TRANSISTORS
Capacitor
Inductor
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 29
Microwave devices
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 30
NMOS Transistor
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 31
PMOS Transistor
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 32
Interconnect
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 33
Diode
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 34
Resistor
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 35
Capacitor
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 36
Inductor
1.2 Technology and device for microwave integrated circuits
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 37
Circuit Simulator: ADS, Cadence
EM simulator: Momentum, HFSS,IE3D, CST, SONET
1.3 Microwave simulation tools