Characterization of CMP Consumables by Fundamental Understandings of its Process

JSR Corporation Tatsuya Yamanaka

J0002471

September 2015：J0002471 2015 SEMICON Taiwan 2

Semiconductor Manufacturing Trend CY 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

ITRS logic-M1 38 32 28 26 24 22 20 18 17 15 Wafer size

Transistor

Wiring

Wafer level Package

Print Board

ArF Imm. Lithography

450mm

Ⅲ-Ⅴ.

EUVL

TSV（2.5D/3D）

DSAL

Fan out Pannel

FinFET

Co barrier/Cap

W wiring

High-k/Metal Gate

HDI PCB

2D Package

3D Memory

300mm

New metal (Ru, Mn etc), barrier/Cap

JSR Semiconductor Products

g/i-line Resist

KrF Resist

ArF Resist

ArF Imm. Resist

EUV Resist

Si-ARC(Spin-On-Glass)/ SOH Materials Top Coat Materials(TARC)

Imm. TC mat.(ITC)

1990 2000 2010 2020 1980

Lithography

CMP Pad

pCuCMP Cleaner

Packaging

Insulator Thick Resist

2015

BEOL Slurry

W Slurry FEOL ILD Slurry

September 2015：J0002471 2015 SEMICON Taiwan 3

Substrates Substrates

CMP Environment Gap

Tools New!

New!

New!

New!

New!

New!

New!

Tools

Customer environment Supplier environment

Environment gap enlarges as the generation proceeds. Techniques to fill the gap is one of supplier’s differentiator.

Removal Rate & Defectivity

New Off target! On target!

Original

No defect! Defect!

GAP

September 2015：J0002471 2015 SEMICON Taiwan 4

Breakdown of Requirement

Defectivity

Planarity

Stability

Requirement In detail

Cost

Interaction

Time(Speed)

Chemical

Abrasive

Substrate

Method

Electro-chemistry

Surface chemistry

And more…

Residue

Corrosion (roughness)

Removal rate

Selectivity

Scratch

And more…

When the customer’s requirements are broken down, electro-chemistry and surface chemistry are the important

technique for CMP. September 2015：J0002471 2015 SEMICON Taiwan 5

Cu BM Oxide

e-

BM ion

Cleaner Water/IPA

Surface corrosion

Residue removal

Electro-Chemistry ~ Status understandings ~

There are many electro-chemistry techniques to understand various status and mechanism.

Oxidation status

Protection@pH1 2

Etching@pH1 0

Additive behavior

Good!

Galvanic corrosion

Cu(OH)2

CuO

Cu2O

Cu2O

Additive interaction

Cu ion

September 2015：J0002471 2015 SEMICON Taiwan 6

-30

-25

-20

-15

-10

-5

00 10 20 30 40 50 60 70

R_i

m /k

ohm

R_re / kohm

Relation Between Electro-chemistry and CMP Results

OM of Cu surface

Smooth!

0

200

400

600

800

1000

0

50

100

150

200

non Type A Type B

Impe

danc

e [Ω

]

W R

R [

Å/m

in]

W RR Impedance

Electro-chemistry is one of a key technology for defect reduction, removal rate prediction.

ZRe [kohm]

-Zim

[koh

m]

Example 1: Cu corrosion check Example 2: W removal rate

Additive

September 2015：J0002471 2015 SEMICON Taiwan 7

Surface Chemistry ~ And relation with CMP ~

Substrate + + + + +

+

Abrasive charge control

+ -

- -

-

With Additive

- - + +

+ +

Substrate - - - - -

Substrate + - - - - - + + + +

Substrate charge control

Pad charge control / understanding - - - -

-40

-30

-20

-10

0

10

0

100

200

300

400

500

600

Negative Positive

z-po

tent

ial [

mV]

Rem

oval

Rat

e [Å

/min

]

SiNTEOSPoly-Siz-potential

Defect Reduction

Removal Rate Control

Control of surface charge is one of a key technology for defect reduction, removal rate prediction

-

+ + - -

Substrate - - - - - + + + + +

- - + +

- + +

+ +

September 2015：J0002471 2015 SEMICON Taiwan 8

RR on target!

JSR Technical / Sample Proposal

CMP data RR, selectivity, defect

etc…

Previous Fundamental data

Electrical chemistry Surface chemistry

Mechanism understanding

Current

Fundamental research or background data is proposed in addition to the general CMP performance data for smaller

gap between customer and JSR.

New RR on target! Original

No defect! No defect! No or small GAP

Customer Supplier Sample Proposal

September 2015：J0002471 2015 SEMICON Taiwan 9

Image of Collaboration Speed

Time

Per

form

ance

Update

Customer JSR

Feedback

Feedback

Update

Update

With fundamental background data, increase of performance at the customer will be faster.

Only conventional CMP update

Update with CMP results with fundamental background

Slow

Fast

September 2015：J0002471 2015 SEMICON Taiwan 10

Low Defectivity

JSR Consumables Metal related consumables

Non-metal related consumables

Example of removal rate controllability

Many JSR products are approved for sale by using the fundamental data set method.

SiN Slurry Oxide Slurry

Post SiN Cleaner

No corrosion Controlled RR

No TMAH Good surface control

W Slurry Post Cu Cleaner

Post W Cleaner

Good surface control Particle removal

Controlled RR High RR with colloidal silica

Good surface control Particle removal

September 2015：J0002471 2015 SEMICON Taiwan 11

Summary

JSR CMP consumables have fundamental background to fill the gap between the customer and JSR.

This background will also relate quick update to customer which should also accelerate customer’s development. Fundamental data for reasonable update with deep

understandings Quick turn-around without CMP data Predicted results before CMP in JSR or at customer

Many JSR products are approved for sale

by using the fundamental data set method.

September 2015：J0002471 2015 SEMICON Taiwan 12

Thank You

September 2015：J0002471 2015 SEMICON Taiwan 13