Cree CMF20102D SiC MOSFET

1 C2M0080120D Rev. C, 10-2015

C2M0080120DSilicon Carbide Power MOSFET C2M

TM MOSFET Technology

N-Channel Enhancement Mode Features

• High Blocking Voltage with Low On-Resistance• High Speed Switching with Low Capacitances• Easy to Parallel and Simple to Drive• Avalanche Ruggedness• Halogen Free, RoHS Compliant

Benefits

• HigherSystemEfficiency• Reduced Cooling Requirements• Increased Power Density• Increased System Switching Frequency

Applications

• Solar Inverters• Switch Mode Power Supplies • High Voltage DC/DC Converters• Battery Chargers• Motor Drives• Pulsed Power applications

Package

TO-247-3

Part Number Package

C2M0080120D TO-247-3

VDS 1200 V

ID @ 25˚C 36 A

RDS(on) 80 mΩ

Maximum Ratings (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Value Unit Test Conditions Note

VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID=100μA

VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values

VGSop Gate - Source Voltage -5/+20 V Recommended operational values

ID Continuous Drain Current36

AVGS = 20 V, TC =25˚C Fig. 19

24 VGS = 20 V, TC =100˚C

ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22

PDPower Dissipation 192 W TC=25˚C,TJ=150˚C Fig. 20

TJ , TstgOperating Junction and Storage Temperature -55 to

+150 ˚C

TLSolder Temperature 260 ˚C 1.6mm(0.063”)fromcasefor10s

Md Mounting Torque 18.8

Nmlbf-in M3 or 6-32 screw

2 C2M0080120D Rev. C, 10-2015

Electrical Characteristics (TC=25˚Cunlessotherwisespecified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID=100μA

VGS(th) Gate Threshold Voltage2.0 2.6 4 V VDS = VGS, ID = 5 mA

Fig. 112.1 V VDS = VGS, ID = 5 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V

IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V

RDS(on) Drain-Source On-State Resistance80 98

mΩVGS = 20 V, ID = 20 A Fig. 4,

5, 6128 VGS = 20 V, ID = 20A, TJ = 150ºC

gfs Transconductance8.1

SVDS= 20 V, IDS= 20 A

Fig. 77.8 VDS= 20 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 950

pFVGS = 0 V

VDS = 1000 V

f = 1 MHzVAC = 25 mV

Fig. 17, 18

Coss Output Capacitance 80

Crss Reverse Transfer Capacitance 7.6

Eoss Coss Stored Energy 45 μJ Fig. 16

EAS Avalanche Energy, Single Pluse 1 J ID = 20A, VDD = 50V Fig. 29

EON Turn-On Switching Energy 265μJ

VDS = 800 V, VGS = -5/20 V, ID = 20A, RG(ext)=2.5Ω,L=142μH

Fig. 25EOFF Turn Off Switching Energy 135

td(on) Turn-On Delay Time 11

ns

VDD = 800 V, VGS = -5/20 VID = 20 A, RG(ext)=2.5Ω,RL=40Ω,TimingrelativetoVDS Per IEC60747-8-4 pg 83

Fig. 27tr Rise Time 20

td(off) Turn-Off Delay Time 23

tf Fall Time 19

RG(int) Internal Gate Resistance 4.6 Ω f = 1 MHz, VAC = 25 mV

Qgs Gate to Source Charge 15

nCVDS = 800 V, VGS = -5/20 VID = 20 APer IEC60747-8-4 pg 21

Fig. 12Qgd Gate to Drain Charge 23

Qg Total Gate Charge 62

Reverse Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

VSD Diode Forward Voltage3.3 V VGS = - 5 V, ISD = 10 A

Fig. 8, 9, 10

3.1 V VGS = - 5 V, ISD = 10 A, TJ = 150 °C

IS Continuous Diode Forward Current 36 A TC =25˚C Note 1

trr Reverse Recover time 32 nsVGS = - 5 V, ISD = 20 A, VR = 800 Vdif/dt = 2400 A/µs Note 1Qrr Reverse Recovery Charge 192 nC

Irrm Peak Reverse Recovery Current 10 A

Note(1):WhenusingSiCBodyDiodethemaximumrecommendedVGS = -5V

Thermal Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 0.60 0.65°C/W Fig. 21

RθJA Thermal Resistance From Junction to Ambient 40

3 C2M0080120D Rev. C, 10-2015

0

10

20

30

40

50

60

70

0.0 2.5 5.0 7.5 10.0 12.5

Drai

n-So

urce

Cur

rent

, IDS

(A)

Drain-Source Voltage, VDS (V)

Conditions:TJ = 150 °Ctp < 200 µs VGS = 20 V

VGS = 10 V

VGS = 18 V

VGS = 16 VVGS = 14 V

VGS = 12 V

0

10

20

30

40

50

60

70

0.0 2.5 5.0 7.5 10.0 12.5

Drai

n-So

urce

Cur

rent

, IDS

(A)


Conditions:TJ = -55 °Ctp < 200 µs

VGS = 20 V

VGS = 10 V

VGS = 18 V

VGS = 16 V

VGS = 14 V

VGS = 12 V

0

10

20

30

40

50

60

70

0.0 2.5 5.0 7.5 10.0 12.5

Drai

n-So

urce

Cur

rent

, IDS

(A)


Conditions:TJ = 25 °Ctp < 200 µs

VGS = 20 V

VGS = 10 V

VGS = 18 V

VGS = 16 V VGS = 14 V

VGS = 12 V

Figure 2. Output Characteristics TJ = 25 ºC

Typical Performance

Figure 5. On-Resistance vs. Drain CurrentFor Various Temperatures

Figure 1. Output Characteristics TJ = -55 ºC

Figure 3. Output Characteristics TJ = 150 ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150

On R

esist

ance

, RDS

On

(P.U

.)

Junction Temperature, TJ (°C)

Conditions:IDS = 20 AVGS = 20 Vtp < 200 µs

0

20

40

60

80

100

120

140

160

180

200

0 10 20 30 40 50 60 70

On R

esist

ance

, RDS

On

(mOh

ms)

Drain-Source Current, IDS (A)

Conditions:VGS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -55 °C

TJ = 25 °C

Figure 4. Normalized On-Resistance vs. Temperature

0

40

80

120

160

200

240

280

-50 -25 0 25 50 75 100 125 150

On

Resi

stan

ce, R

DS O

n(m

Ohm

s)


Conditions:IDS = 20 Atp < 200 µs

VGS = 20 V

VGS = 18 V

VGS = 16 V

VGS = 14 V

Figure 6. On-Resistance vs. TemperatureFor Various Gate Voltage

4 C2M0080120D Rev. C, 10-2015

Typical Performance

Figure 8. Body Diode Characteristic at -55 ºC

Figure 9. Body Diode Characteristic at 25 ºC

0

10

20

30

40

0 2 4 6 8 10 12 14

Drai

n-So

urce

Cur

rent

, IDS

(A)

Gate-Source Voltage, VGS (V)

Conditions:VDS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -55 °C

TJ = 25 °C

-70

-60

-50

-40

-30

-20

-10

0-7 -6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)

Drain-Source Voltage, VDS (A)

VGS = 0 V

VGS = -2 V

VGS = -5 V Condition:TJ = -55 °Ctp < 200 µs

-70

-60

-50

-40

-30

-20

-10

0-7 -6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 VCondition:TJ = 25 °Ctp < 200 µs

-70

-60

-50

-40

-30

-20

-10

0-7 -6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


VGS = 0 V

VGS = -2 V

VGS = -5 V

Condition:TJ = 150 °Ctp < 200 µs

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-50 -25 0 25 50 75 100 125 150

Thre

shol

d Vo

ltage

, Vth

(V)

Junction Temperature TJ (°C)

ConditionsVDS = 10 VIDS = 0.5 mA

ConditionsVDS = VGSIDS = 5 mA

Figure 10. Body Diode Characteristic at 150 ºC

-5

0

5

10

15

20

25

0 10 20 30 40 50 60 70

Gate

-Sou

rce V

olta

ge, V

GS

(V)

Gate Charge, QG (nC)

Conditions:IDS = 20 AIGS = 100 mAVDS = 800 VTJ = 25 °C

Figure 7. Transfer Characteristic for Various Junction Temperatures

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics

5 C2M0080120D Rev. C, 10-2015

Typical Performance

Figure 15. 3rd Quadrant Characteristic at 150 ºC

Figure 13. 3rd Quadrant Characteristic at -55 ºC

-70

-60

-50

-40

-30

-20

-10

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)


Conditions:TJ = -55 °Ctp < 200 µs

VGS = 0 V

VGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-70

-60

-50

-40

-30

-20

-10

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 V

VGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

-70

-60

-50

-40

-30

-20

-10

0-6 -5 -4 -3 -2 -1 0

Drai

n-So

urce

Cur

rent

, IDS

(A)



VGS = 0 V VGS = 5 V

VGS = 10 V

VGS = 15 V

VGS = 20 V

Figure 14. 3rd Quadrant Characteristic at 25 ºC

0

5

10

15

20

25

30

35

40

45

50

0 200 400 600 800 1000 1200

Stor

ed En

ergy

, EO

SS(µ

J)

Drain to Source Voltage, VDS (V)

Figure 16. Output Capacitor Stored Energy

Figure 17. Capacitances vs. Drain-Source Voltage(0-200V)

1

10

100

1000

10000

0 50 100 150 200

Capa

cita

nce

(pF)


Ciss

Coss

Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz

Crss

1

10

100

1000

10000

0 200 400 600 800 1000

Capa

cita

nce

(pF)


Ciss

Coss

Conditions:TJ = 25 °CVAC = 25 mVf = 1 MHz

Crss

Figure 18. Capacitances vs. Drain-Source Voltage(0-1000V)

6 C2M0080120D Rev. C, 10-2015

1E-3

10E-3

100E-3

1

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Junc

tion

To C

ase

Impe

danc

e, Z t

hJC

(o C/W

)

Time, tp (s)

0.5

0.3

0.1

0.05

0.02

0.01

SinglePulse

Typical Performance

0

5

10

15

20

25

30

35

40

-55 -30 -5 20 45 70 95 120 145

Drai

n-So

urce

Con

tinou

s Cur

rent

, IDS

(DC)

(A)

Case Temperature, TC (°C)

Conditions:TJ ≤ 150 °C

0

50

100

150

200

250

-55 -30 -5 20 45 70 95 120 145

Max

imum

Dis

sipa

ted

Pow

er, P

tot(

W)

Case Temperature, TC (°C)

Conditions:TJ ≤ 150 °C

0.01

0.10

1.00

10.00

100.00

0.1 1 10 100 1000

Drai

n-So

urce

Curr

ent,

I DS

(A)


100 µs

1 ms

10 µs

Conditions:TC = 25 °CD = 0, Parameter: tp

100 ms

Limited by RDS On

Figure 22. Safe Operating AreaFigure 21. Transient Thermal Impedance(Junction-Case)

0

200

400

600

800

1000

1200

1400

1600

0 10 20 30 40 50

Switc

hing

Ener

gy (u

J)

Drain to Source Current, IDS (A)

Conditions:TJ = 25 °CVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D10120AL = 142 μH

EOff

EOn

ETotal

Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD=800V)

Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD=600V)

0

200

400

600

800

1000

1200

0 10 20 30 40 50

Switc

hing

Ener

gy (u

J)

Drain to Source Current, IDS (A)

Conditions:TJ = 25 °CVDD = 600 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D10120AL = 142 μH

EOff

EOn

ETotal

Figure 19. Continuous Drain Current Derating vs. Case Temperature

Figure 20. Maximum Power Dissipation Derating vs. Case Temperature

7 C2M0080120D Rev. C, 10-2015

Typical Performance

0

100

200

300

400

500

600

700

800

900

1000

0 5 10 15 20 25 30

Switc

hing

Loss

(uJ)

External Gate Resistor RG(ext) (Ohms)

EOff

EOn

ETotal

Conditions:TJ = 25 °CVDD = 800 VIDS = 20 AVGS = -5/+20 VFWD = C4D10120AL = 142 μH

0

10

20

30

40

50

60

70

0 5 10 15 20 25 30

Tim

e (n

s)

External Gate Resistor, RG(ext) (Ohms)

Conditions:TJ = 25 °CVDD = 800 VRL = 40 ΩVGS = -5/+20 V

td (off)

td (on)

tf

tr

0

100

200

300

400

500

600

-50 -25 0 25 50 75 100 125 150

Swith

cing

Loss

(uJ)


Conditions:IDS = 20 AVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VFWD = C4D10120AL = 142 µH

EOff

EOn

ETotal

Figure 26. Clamped Inductive Switching Energy vs. Temperature

Figure 27. Switching Times vs. RG(ext)

Figure 25. Clamped Inductive Switching Energy vs. RG(ext)

Figure28.SwitchingTimesDefinition

0

5

10

15

20

25

30

35

0 25 50 75 100 125 150 175 200

Aval

anch

e Cu

rren

t (A)

Time in Avalanche TAV (us)

Conditons:VDD = 50 V

Figure 29. Single Avalanche SOA curve

8 C2M0080120D Rev. C, 10-2015

Test Circuit Schematic

ESD Test Total Devices Sampled Resulting Classification

ESD-HBM All Devices Passed 1000V 2(>2000V)

ESD-MM All Devices Passed 400V C(>400V)

ESD-CDM All Devices Passed 1000V IV(>1000V)

ESD Ratings

D1 C4D10120A10A, 1200VSiC Schottky

D.U.TC2M0080120D

L=142 uH

Q2

VDC

D.U.TC2M0080120D

Q1

VGS= - 5V

C2M0080120D

RG

RG

CDC=42.3 uF

L=142 uH

Q2

VDC

RG

CDC=42.3 uF

Figure 30. Clamped Inductive Switching Waveform Test Circuit

Figure 31. Body Diode Recovery Test Circuit

9 C2M0080120D Rev. C, 10-2015

Package Dimensions

Package TO-247-3

Recommended Solder Pad Layout

TO-247-3

POSInches Millimeters

Min Max Min Max

A .190 .205 4.83 5.21

A1 .090 .100 2.29 2.54

A2 .075 .085 1.91 2.16

b .042 .052 1.07 1.33

b1 .075 .095 1.91 2.41

b2 .075 .085 1.91 2.16

b3 .113 .133 2.87 3.38

b4 .113 .123 2.87 3.13

c .022 .027 0.55 0.68

D .819 .831 20.80 21.10

D1 .640 .695 16.25 17.65

D2 .037 .049 0.95 1.25

E .620 .635 15.75 16.13

E1 .516 .557 13.10 14.15

E2 .145 .201 3.68 5.10

E3 .039 .075 1.00 1.90

E4 .487 .529 12.38 13.43

e .214 BSC 5.44 BSC

N 3 3

L .780 .800 19.81 20.32

L1 .161 .173 4.10 4.40

ØP .138 .144 3.51 3.65

Q .216 .236 5.49 6.00

S .238 .248 6.04 6.30

T 9˚ 11˚ 9˚ 11˚

U 9˚ 11˚ 9˚ 11˚

V 2˚ 8˚ 2˚ 8˚

W 2˚ 8˚ 2˚ 8˚

Pinout Information:

• Pin 1 = Gate• Pin 2, 4 = Drain • Pin 3 = Source

T U

WV

Part Number Package Marking

C2M0080120D TO-247-3 C2M0080120

1010 C2M0080120D Rev. C, 10-2015

Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.5451www.cree.com/power

• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree repre-sentative or from the Product Documentation sections of www.cree.com.

• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limitedtoequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.

Notes

Related Links

• C2M PSPICE Models: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Isolated Gate Driver reference design: http://wolfspeed.com/power/tools-and-support

• SiC MOSFET Evaluation Board: http://wolfspeed.com/power/tools-and-support

Documents

Cree CMF20102D SiC MOSFET