CU

RREN

T D

EVEL

OPM

ENTS

O

F TH

E V

ENU

SIO

N S

OU

RCE

IN R

ESEA

RCH

AN

D O

PERA

TIO

NS

ECRI

S 20

12Se

p27

, 201

2

J.Y. B

enite

z1 , K.

Y. F

ranz

en1 ,

C.M

. Lyn

eis1 ,

G. M

achi

coan

e2 , L.

Pha

ir1 ,

M

. St

rohm

eier

1 , an

d L.

T. Su

n3

1 Law

renc

e Be

rkel

ey N

atio

nal L

ab, B

erke

ley,

CA

, USA

2 Mic

higa

n St

ate

Uni

vers

ity, E

ast L

ansin

g, M

I, U

SA3 In

stitu

te o

f M

oder

n Ph

ysic

s, La

nzho

u, C

hina

Out

line

I.Q

uick

ove

rvie

w o

f V

ENU

S

II.Sp

utte

r pr

obe

test

res

ults

III.

LoT

Ove

n:

I.Bi

56+

for

cock

tails

II.Li

ner

test

& C

alci

um c

onsu

mpt

ion

IV.

Hig

h Vo

ltage

Upg

rade

& H

eliu

m R

esul

ts

V.

Plas

ma

cham

ber

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

VEN

US

Layo

ut o

n Va

ult R

oof

plas

ma

cham

ber

cryo

stat

bend

ing

mag

net

ECR

beam

line

AEC

R be

amlin

e

ECR

VEN

US

AEC

R-U

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

VEN

US

Miss

ion:

1.Pr

otot

ype

for

FRIB

2.Re

sear

ch to

ol3.

Inje

ctor

for

the

88”

cycl

otro

n

Ove

rvie

w o

f V

ENU

S Extra

ctio

n

4 C

ryoc

oole

rsH

e fil

l tub

e

Sext

upol

e

LN R

eser

voir

Sole

noid

s

•Ful

ly s

uper

cond

uctin

g, N

iobi

um-T

itani

um

sext

upol

e&

3 s

olen

oids

enc

lose

d in

LH

e•L

N R

eser

voir

: 70K

, diss

ipat

es h

eat f

rom

nor

mal

co

nduc

ting

lead

s•L

He

Rese

rvoi

r: 4.

2K•F

our t

wo

stag

e cr

yoco

oler

sw

hich

pro

vide

6W

to

tal c

oolin

g po

wer

at 4

.2K

, rec

onde

nse

evap

orat

ed H

e, 1

stst

age

(45K

) coo

ls pa

rt o

f th

e C

u le

ads

•Rec

ently

ran

22

mon

ths

stra

ight

MaximumInjectionField,onaxis

4.0T

MaximumExtractionField,onaxis

3.0T

MaximumRadialField,atwall

2.2T

ChamberDiameter

14cm

ChamberLength

50cm

18GHzMaximumPower

2kW

28GHzMaximumPower

10kW

28GHzMaximumPowerInjected

6.5kW

18+28GHzMaximumPowerInjected

8.5kW

Plas

ma

Cha

mbe

r

RF, O

ven,

Sp

utte

r Pr

obe

Feed

thro

ughs

LHe

Rese

rvoi

r

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

Sput

ter

Prob

e D

evel

opm

ent

Fo

r us

e in

coc

ktai

ls to

pro

vide

V, A

g, T

a, C

u, a

nd p

ossib

ly o

ther

s…

C

ockt

ail:

Mix

ture

of

ions

of

simila

r M

/Q d

eliv

ered

to c

yclo

tron

from

EC

R sim

ulta

neou

sly

D

irect

ion

sput

terin

g te

chni

que

Pl

asm

a io

ns a

ccel

erat

ed to

war

d sa

mpl

e im

pact

sur

face

and

sput

ter

mat

eria

l int

o pl

asm

a

C

apab

ility

will

mak

e V

ENU

S a

good

bac

kup

for

AEC

R-U

co

ckta

ils

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

Initi

al T

est R

esul

ts:

•Cu

plat

e m

ount

ed o

n bi

as d

isk

•At -

2000

V a

pplie

d vo

ltage

,

prod

uced

onl

y 2.

3eµA

of

63C

u15+

•Eno

ugh

for

chip

test

ing

but n

ot

easil

y re

mov

ed a

nd u

npra

ctic

al

10M

eV/u

M/Q

Prod

uctio

n M

etho

d

LET

(MeV

/(m

g/c

m2 )

)

RA

NG

E (µ

m)

11B3+

3.67

MIV

OC

CH

AM

BER

0.89

305.

7

18O

5+3.

60G

AS

2.19

226.

4

22N

e6+3.

67G

AS

3.49

174.

6

29Si

8+3.

63G

AS

6.09

141.

7

40A

r11+

3.64

GA

S9.

7413

0.1

51V

14+

3.

64Sp

utte

r Pr

obe

14.6

113.

4

65C

u18+

3.61

Sput

ter

Prob

e21

.210

8

84Kr

24+

3.5

GA

S30

.211

3.1

89Y25

+3.

56Sp

utte

r Pr

obe

34.7

102.

2

107 A

g29+

3.69

Sput

ter

Prob

e48

.290

.0

124 X

e34+

3.65

GA

S58

.890

.0

Sput

ter

Prob

e D

evel

opm

ent

grou

nd

-V-V

-V

+

+

+

++

plas

ma

024681012141618

1000

1200

1400

1600

1800

2000

Beam Current (eµA)

Sput

ter V

olta

ge (

-V)

VEN

US

Sput

ter

Prob

es: 18

1 Ta29

+

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

W

ater

-coo

led

supp

ort t

ube,

mov

eabl

e be

llow

s, 3

sam

ple

capa

bilit

y

In

itial

test

s po

sitiv

e

So

on le

arne

d po

sitio

n of

pro

be n

ot id

eal:

inse

rted

at f

lute

pos

ition

Ra

dial

pos

ition

is 5

.6cm

, cha

mbe

r ra

dius

is 7

.2cm

C

ompl

eted

Jul

y, 2

011

O

pera

tes

up to

650

°C to

vap

oriz

e m

etal

s

Ex

pand

s V

ENU

S’ m

etal

pro

duct

ion

capa

bilit

y

Ove

n D

evel

opm

ent:

Low

Tem

p

Cal

cium

Dev

elop

men

t: H

igh

Inte

nsity

av

gcu

rren

t of

100e

µA o

f 40

Ca11

+

U

sed

63m

g, c

onsu

mpt

ion

rate

of

0.67

mg/

hr

2%

eff

icie

ncy

into

40C

a11+

,~

9% to

tal

effic

ienc

y

G

ood

new

s fo

r hi

gh in

tens

ity 48

Ca

runs

whe

re

1mg

of 48

Ca~

$250

(63m

g~$1

5,75

0)

G

ood

effic

ienc

y =

No

liner

req

uire

d =

No

inte

rrup

tion

to c

ockt

ail r

uns

Bism

uth

Dev

elop

men

t:10

MeV

Coc

ktai

l

A

ccel

erat

ed20

9 Bi56

+, B

i57+, B

i58+

thro

ugh

cycl

otro

n

A

t cyc

lotro

n ex

tract

ion

had

0.08

enA

of

Bi56

+

In

crea

ses

max

imum

Lin

erEn

ergy

Tra

nsfe

r in

Si

licon

by 3

5% f

or o

ur 1

0MeV

Coc

ktai

l

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

inje

ctio

n

extr

actio

n

13

5

9

11 7

Ove

n D

evel

opm

ent:

Low

Tem

p +

Lin

er

280

300

320

340

360

380

400

420

440

012345

13/0

3/20

12 1

3:26

13/0

3/20

12 1

3:37

13/0

3/20

12 1

3:48

13/0

3/20

12 1

3:58

Sextupole Current (A)

Ta20+ (eµA)

Tim

e

111

93

57

Ta

ntal

umlin

erte

st 0

3/20

12in

atte

mpt

to

incr

ease

eff

icie

ncy

for

48C

a be

ams

3

laye

rs o

f 0.

003”

thic

k Ta

, 12”

long

U

sed

only

18G

Hz

heat

ing

at 1

8GH

z se

xtup

ole/

sole

noid

fie

lds

Pr

os:

Ø

Co

ns:

N

eede

dto

rai

se s

extu

pole

field

to 2

8GH

z fie

ld (4

60A

, 2.2

T) in

ord

er to

red

uce

Ta

peak

s in

spe

ctra

D

id n

ot in

crea

se e

ffic

ienc

y.

No

liner

: 0.6

7mg/

hr

With

line

r: 0.

73m

g/hr

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

No

whi

te C

aOre

sidue

form

ed o

n lin

er!

Hig

h Vo

ltage

Upg

rade

plas

ma

beam

ex

tract

ion

hole

Pulle

r (0

to -

10kV

)

Gro

und

shie

ld

@ H

V

•Sou

rce

wou

ld n

ot h

old

volta

ge a

bove

22k

V

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

Hig

h Vo

ltage

Upg

rade

Gro

und

shie

ld

@ H

V

•cle

aned

bur

ned

area

•Incr

ease

d H

V to

gro

und

shie

ld d

istan

ce•N

ew H

V p

ower

sup

ply

(40k

V, 2

5mA

)•H

ave

now

rea

ched

30k

V!

•lim

ited

by 2

8GH

z H

V

brea

k

New

Rec

ord

Ach

ieve

d:4 H

e1+: 9

.3em

A4 H

e2+: 1

1em

A

Sour

ce P

aram

eter

s:To

tal E

xtra

cted

: 25e

mA

@ 2

5kV

Inj.

Pres

sure

: 1x1

0-6m

bar

18G

Hz:

174

5W28

GH

z: 1

000W

Bias

Disk

: -33

5V, 5

8mA

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

Lim

ited

now

by

HV

pow

er

supp

ly!

VEN

US

Plas

ma

Cha

mbe

r

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

Bu

rned

a h

ole

in p

lasm

a ch

ambe

r at

7 o

’clo

ck p

ositi

on in

ject

ion

flute

M

easu

red

a w

all t

hick

ness

of

0.05

3” a

t thi

nnes

t loc

atio

n

Sa

me

loca

tion

as 2

005’

s 28

GH

z G

yrot

ron

acci

dent

. Thi

s ho

le

attr

ibut

ed to

mor

e co

ntin

uous

op

erat

ion

Im

port

ant t

o co

nsid

er fo

r V

ENU

S II

and

4thge

nera

tion

H 2O

Supp

ly

Retu

rn

Retu

rn

SR

R

S

RR

R

2012

2005

VEN

US

Plas

ma

Cha

mbe

r

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

In

vest

igat

ion

of th

e al

ignm

ent o

f ch

ambe

r to

sex

tupo

lem

agne

ts r

evea

led

that

ch

ambe

r sit

s hi

gh b

y 1m

m (4

0mils

)

Vacu

um

Vess

el

Sext

upol

e

H 2O

Supp

ly

Retu

rn

Retu

rn

Plas

ma

Cham

ber

Sole

noid

-

13

57

911

1850

0

1900

0

1950

0

2000

0

2050

0

2100

0

Flut

e Po

sitio

n

B [Gauss]

VEN

US

Sext

upol

e Fi

eld

at th

e W

all a

t Hol

e Lo

catio

nI=

460A

1

3

57

9

11

VEN

US

Plas

ma

Cha

mbe

r

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

In

spec

tion

of th

e m

ylar

insu

latio

n re

veal

s da

mag

e at

pos

ition

of

the

3 in

ject

ion

flute

s

H

igh

ener

gy x

-ray

s go

ing

thro

ugh

2mm

Ta

shee

t

9

laye

rs o

f 0.

015”

myl

arsh

eet

Re

duce

d to

6 la

yers

in

atte

mpt

to c

orre

ct

alig

nmen

t off

set o

f 1m

m

Sum

mar

y

FRIB

ECR

Req

uire

men

tsEl

emen

tI(

eμA)

VEN

US(

eμA)

Argo

n40

Ar8+

378

525

of 8

+Ca

lciu

m48

Ca11

+46

840

0 of

40Ca

11+

Xeno

n12

4 Xe18

+33

443

2of

26+

Bism

uth

209 B

i29+

422

300

of 3

1+U

rani

um23

8 U33

,34+

440

840

ECR

Gro

up: (

left

to r

ight

) J. B

enite

z, C

laud

e Ly

neis,

Mar

kus

Stro

hmei

er, K

en F

ranz

en

•VEN

US

usag

e in

ope

ratio

ns in

crea

sed

from

1.1

% in

200

7 to

17.

5% in

201

2 (~

850h

rs)

•We

cont

inue

to le

arn

and

wor

k to

war

ds im

prov

emen

ts!

Jani

lee

Beni

tez

EC

RIS1

2

Sep

tem

ber

27, 2

012

•VEN

US

satis

fied

mos

t FRI

B re

quire

men

ts•C

ontin

ue to

mak

e ad

vanc

es in

bea

m in

tens

ities

: H

e, U

(G. M

achi

coan

e’s

talk

)•L

oTov

en h

as s

ucce

eded

in p

rodu

cing

bea

ms

for

88”

rese

arch

ers

•Spu

tter

Prob

e st

ill in

dev

elop

men

t