DATA SHEET

Product specificationSupersedes data of 2001 Nov 07

2004 Dec 23

DISCRETE SEMICONDUCTORS

PBSS3515VS15 V low VCE(sat) PNP doubletransistor

M3D744

Philips Semiconductors Product specification

15 V low V CE(sat) PNP double transistor PBSS3515VS

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Low collector-emitter saturation voltage

• High current capability

• Improved thermal behaviour due to flat leads

• Replaces two SC75/SC89 packaged low VCEsattransistors on same PCB area

• Reduces required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and muting

• Low frequency driver circuits

• LCD backlighting

• Audio frequency general purpose amplifier applications

• Battery driven equipment (mobile phones, videocameras and hand-held devices).

DESCRIPTION

PNP low VCEsat double transistor in a SOT666 plasticpackage.NPN complement: PBSS2515VS.

MARKING

QUICK REFERENCE DATA

PINNING

TYPE NUMBER MARKING CODE

PBSS3515VS 35

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −15 V

ICM peak collector current −1 A

RCEsat equivalent on-resistance <500 mΩ

PIN DESCRIPTION

1, 4 emitter TR1; TR2

2, 5 base TR1; TR2

6, 3 collector TR1; TR2

MAM450

1 32

TR1TR2

6 45

1 2 3

46 5

Top view

Fig.1 Simplified outline (SOT666) and symbol.

ORDERING INFORMATION

TYPE NUMBERPACKAGE

NAME DESCRIPTION VERSION

PBSS3515VS − plastic surface mounted package; 6 leads SOT666

2004 Dec 23 2

Philips Semiconductors Product specification

15 V low VCE(sat) PNP double transistor PBSS3515VS

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor unless otherwise specified

VCBO collector-base voltage open emitter − −15 V

VCEO collector-emitter voltage open base − −15 V

VEBO emitter-base voltage open collector − −6 V

IC collector current (DC) − −500 mA

ICM peak collector current − −1 A

IBM peak base current − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW

Tstg storage temperature −65 +150 °CTj junction temperature − 150 °CTamb operating ambient temperature −65 +150 °C

Per device

Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient notes 1 and 2 416 K/W

2004 Dec 23 3

Philips Semiconductors Product specification

15 V low VCE(sat) PNP double transistor PBSS3515VS

CHARACTERISTICSTamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor unless otherwise specified

ICBO collector-base cut-off current VCB = −15 V; IE = 0 A − − −100 nA

VCB = −15 V; IE = 0 A; Tj = 150 °C − − −50 µA

IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 nA

hFE DC current gain VCE = −2 V; IC = −10 mA 200 − −VCE = −2 V; IC = −100 mA; note 1 150 − −VCE = −2 V; IC = −500 mA; note 1 90 − −

VCEsat collector-emitter saturationvoltage

IC = −10 mA; IB = −0.5 mA − − −25 mV

IC = −200 mA; IB = −10 mA − − −150 mV

IC = −500 mA; IB = −50 mA; note 1 − − −250 mV

RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 <500 mΩVBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 − − −1.1 V

VBE base-emitter turn-on voltage VCE = −2 V; IC = −100 mA; note 1 − − −0.9 V

fT transition frequency IC = −100 mA; VCE = −5 V;f = 100 MHz

100 280 − MHz

Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1 MHz − − 10 pF

2004 Dec 23 4

Philips Semiconductors Product specification

15 V low VCE(sat) PNP double transistor PBSS3515VS

handbook, halfpage

0

400

600

200

MLD649

−10−1 −1 −10IC (mA)

hFE

−102 −103

(2)

(1)

(3)

Fig.2 DC current gain as a function of collectorcurrent; typical values.

VCE = −2 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD651

−1−10−1IC (mA)

VBE(mV)

−10 −102 −103

(1)

(3)

(2)

Fig.3 Base-emitter voltage as a function ofcollector current; typical values.

VCE = −2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage−103

−102

−10

−1

MLD653

−10−1 −1 −10IC (mA)

VCEsat(mV)

−102 −103

(1)(2)

(3)

Fig.4 Collector-emitter saturation voltage as afunction of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLD652

−1−10−1IC (mA)

VBEsat(mV)

−10 −102 −103

(2)

(3)

(1)

Fig.5 Base-emitter saturation voltage as afunction of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

2004 Dec 23 5

Philips Semiconductors Product specification

15 V low VCE(sat) PNP double transistor PBSS3515VS

handbook, halfpage103

102

10

1

10−1

MLD654

−10−1 −1 −10IC (mA)

RCEsat(Ω)

−102 −103

(1)

(3)(2)

Fig.6 Equivalent on-resistance as a function ofcollector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

0

(1)(2)(3)(4)

(5)

(6)

(7)

(8)

(10)

IC(mA)

VCE (V)

−1200

−800

−400

0−2 −10−4 −6 −8

MLD650

(9)

Fig.7 Collector current as a function ofcollector-emitter voltage; typical values.

(1) IB = −7 mA.

(2) IB = −6.3 mA.

(3) IB = −5.6 mA.

(4) IB = −4.9 mA.

(5) IB = −4.2 mA.

(6) IB = −3.5 mA.

(7) IB = −2.8 mA.

(8) IB = −2.1 mA.

(9) IB = −1.4 mA.

(10) IB = −0.7 mA.

Tamb = 25 °C.

2004 Dec 23 6

Philips Semiconductors Product specification

15 V low VCE(sat) PNP double transistor PBSS3515VS

PACKAGE OUTLINE

UNIT bp c D E e1 HE Lp w

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

01-08-2704-11-08

IEC JEDEC JEITA

mm 0.270.17

0.180.08

1.71.5

1.31.1

0.5

e

1.0 1.71.5

0.1

y

0.1

DIMENSIONS (mm are the original dimensions)

0.30.1

SOT666

bp

pin 1 index

D

e1

e

A

Lp

detail X

HE

EA

S

0 1 2 mm

scale

A

0.60.5

c

X

1 2 3

456

Plastic surface mounted package; 6 leads SOT666

Y S

w M A

2004 Dec 23 7

Philips Semiconductors Product specification

15 V low VCE(sat) PNP double transistor PBSS3515VS

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVELDATA SHEET

STATUS(1)PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective specification for productdevelopment. Philips Semiconductors reserves the right to change thespecification in any manner without notice.

II Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct.

III Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time in orderto improve the design, manufacturing and supply. Relevant changes willbe communicated via a Customer Product/Process Change Notification(CPCN).

DEFINITIONS

Short-form specification The data in a short-formspecification is extracted from a full data sheet with thesame type number and title. For detailed information seethe relevant data sheet or data handbook.

Limiting values definition Limiting values given are inaccordance with the Absolute Maximum Rating System(IEC 60134). Stress above one or more of the limitingvalues may cause permanent damage to the device.These are stress ratings only and operation of the deviceat these or at any other conditions above those given in theCharacteristics sections of the specification is not implied.Exposure to limiting values for extended periods mayaffect device reliability.

Application information Applications that aredescribed herein for any of these products are forillustrative purposes only. Philips Semiconductors makeno representation or warranty that such applications will besuitable for the specified use without further testing ormodification.

DISCLAIMERS

Life support applications These products are notdesigned for use in life support appliances, devices, orsystems where malfunction of these products canreasonably be expected to result in personal injury. PhilipsSemiconductors customers using or selling these productsfor use in such applications do so at their own risk andagree to fully indemnify Philips Semiconductors for anydamages resulting from such application.

Right to make changes Philips Semiconductorsreserves the right to make changes in the products -including circuits, standard cells, and/or software -described or contained herein in order to improve designand/or performance. When the product is in full production(status ‘Production’), relevant changes will becommunicated via a Customer Product/Process ChangeNotification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of theseproducts, conveys no licence or title under any patent,copyright, or mask work right to these products, andmakes no representations or warranties that theseproducts are free from patent, copyright, or mask workright infringement, unless otherwise specified.

2004 Dec 23 8

© Koninklijke Philips Electronics N.V. 2004 SCA76All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

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Contact information

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under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/03/pp9 Date of release: 2004 Dec 23 Document order number: 9397 750 14427