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ACPL-332J2.5 Amp Output Current IGBT Gate Driver Optocoupler with Integrated (VCE) Desaturation Detection, UVLO Fault Status Feedback and Active Miller Clamping
Data Sheet
Features
• UnderVoltageLock-OutProtection(UVLO)withHysteresis
• DesaturationDetection
• MillerClamping
• OpenCollectorIsolatedfaultfeedback
• “Soft”IGBTTurn-off
• FaultResetbynextLEDturn-on(lowtohigh)afterfaultmuteperiod
• AvailableinSO-16package
• Safetyapprovals:ULapproved,3750VRMSfor1minute,CSAapproved,IEC/EN/DIN-EN60747-5-2approvedVIORM=891VPEAK
Specifications
• 2.5Amaximumpeakoutputcurrent
• 2.0Aminimumpeakoutputcurrent
• 250nsmaximumpropagationdelayovertemperaturerange
• 100nsmaximumpulsewidthdistortion(PWD)
• 15kV/µsminimumcommonmoderejection(CMR)atVCM=1500V
• ICC(max)<5mAmaximumsupplycurrent
• WideVCCoperatingrange:15Vto30Vovertemperaturerange
• 1.7AMillerClamp.ClamppinshorttoVEEifnotused
• Wideoperatingtemperaturerange:–40°Cto105°C
Applications
• IsolatedIGBT/PowerMOSFETgatedrive
• ACandbrushlessDCmotordrives
• IndustrialinvertersandUninterruptiblePowerSupply(UPS)
Description
TheACPL-332Jisanadvanced2.5Aoutputcurrent,easy-to-use,intelligentgatedriverwhichmakesIGBTVCEfaultprotection compact, affordable, and easy-to implement.Features such as integrated VCE detection, undervoltage lockout (UVLO), “soft” IGBT turn-off, isolatedopencollectorfaultfeedbackandactiveMillerclampingprovide maximum design flexibility and circuit protec-tion.
TheACPL-332JcontainsaGaAsPLED.TheLEDisopticallycoupled to an integrated circuit with a power outputstage.ACPL-332JisideallysuitedfordrivingpowerIGBTsandMOSFETsusedinmotorcontrolinverterapplications.Thevoltageandcurrentsuppliedbytheseoptocouplersmake them ideally suited for directly driving IGBTs withratings up to 1200 V and 150 A. For IGBTs with higherratings, the ACPL-332J can be used to drive a discretepower stage which drives the IGBT gate.The ACPL-332JhasaninsulationvoltageofVIORM=891VPEAK.
Block Diagram
SHIELD
SHIELD
DRIVER
VE
DESAT
VCC2
VOUT
VCLAMP
VEE
VCC1
VS
FAULT
ANODE
CATHODE
VCLAMP
VLED
6, 7
5, 8
2
3
1, 4
13
11
14
9, 12
10
16
15
DESAT
UVLO
LED1
LED2
SHIELD
SHIELD
DRIVER
VE
DESAT
VCC2
VOUT
VCLAMP
VEE
VCC1
VS
FAULT
ANODE
CATHODE
VCLAMP
VLED
6, 7
5, 8
2
3
1, 4
13
11
14
9, 12
10
16
15
DESAT
UVLO
LED1
LED2
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
Lead (Pb) FreeRoHS 6 fullycompliant
RoHS 6 fully compliant options available;-xxxE denotes a lead-free product
2
Pin Description
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
Pin Symbol Description1 VS InputGround
2 VCC1 Positiveinputsupplyvoltage.(4.5Vto5.5V)
3 FAULT Faultoutput.FAULTchangesfromahighimpedancestateto a logic low output within 5 µs of the voltage on theDESAT pin exceeding an internal reference voltage of 7V.FAULToutputisanopencollectorwhichallowstheFAULToutputs from all ACPL-332J in a circuit to be connectedtogetherina“wiredOR”formingasinglefaultbusforinter-facingdirectlytothemicro-controller.
4 VS InputGround
5 CATHODE Cathode
6 ANODE Anode
7 ANODE Anode
8 CATHODE Cathode
9 VEE Outputsupplyvoltage.
10 VCLAMP Millerclamp
11 VOUT Gatedrivevoltageoutput
12 VEE Outputsupplyvoltage.
13 VCC2 Positiveoutputsupplyvoltage
14 DESAT Desaturation voltage input. When the voltage on DESATexceeds an internal reference voltage of 6.5 V while theIGBTison,FAULToutputischangedfromahighimpedancestatetoalogiclowstatewithin5µs.
15 VLED LEDanode.Thispinmustbeleftunconnectedforguaran-teeddatasheetperformance.(Foropticalcouplingtestingonly)
16 VE Common(IGBTemitter)outputsupplyvoltage.
Ordering Information
ACPL-332JisULRecognizedwith3750Vrmsfor1minuteperUL1577.
Part number
Option
PackageSurface Mount Tape& Reel
IEC/EN/DIN EN 60747-5-2 QuantityRoHS Compliant
ACPL-332J -000E SO-16 X X 45pertube
-500E X X X 850perreel
Toorder,chooseapartnumberfromthepartnumbercolumnandcombinewiththedesiredoptionfromtheoptioncolumntoformanorderentry.
Example1:
ACPL-332J-500EtoorderproductofSO-16SurfaceMountpackageinTapeandReelpackagingwithIEC/EN/DINEN60747-5-2SafetyApprovalinRoHScompliant.
Example2:
ACPL-332J-000EtoorderproductofSO-16SurfaceMountpackageintubepackagingwithIEC/EN/DINEN60747-5-2SafetyApprovalandRoHScompliant.
Optiondatasheetsareavailable.ContactyourAvagosalesrepresentativeorauthorizeddistributorforinformation.
Remarks:Thenotation‘#XXX’ isused forexistingproducts,while (new)products launchedsince15thJuly2001andRoHScompliantoptionwilluse‘-XXXE‘.
3
Package Outline Drawings
ACPL-332J 16-Lead Surface Mount Package
Dimensionsininches(millimeters)Notes:InitialandcontinuedvariationinthecoloroftheACPL-332J’swhitemoldcompoundisnormalanddoesnoteaffectdeviceperformanceorreliability.FloatingLeadProtrusionis0.25mm(10mils)max.
9
0.295 ± 0.010(7.493 ± 0.254)
10111213141516
87654321
0.018(0.457)
0.138 ± 0.005(3.505 ± 0.127)
9°
0.406 ± 0.10(10.312 ± 0.254)
0.408 ± 0.010(10.363 ± 0.254)
0.025 MIN.0.008 ± 0.003
(0.203 ± 0.076)STANDOFF
0.345 ± 0.010(8.763 ± 0.254)
0- 8°
0.018(0.457)
0.050(1.270)
ALL LEADSTO BECOPLANAR± 0.002
A 332JYYWW
TYPE NUMBERDATE CODE
0.458 (11.63)
0.085 (2.16)
0.025 (0.64)
LAND PATTERN RECOMMENDATION
4
Solder Reflow Thermal Profile
Recommended Pb-Free IR Profile
Note:Non-halidefluxshouldbeused.
0
TIME (SECONDS)
TEMP
ERAT
URE
(°C) 200
100
50 150100 200 250
300
0
30SEC.
50 SEC.
30SEC.
160 °C
140 °C150 °C
PEAKTEMP.245 °C
PEAKTEMP.240 °C
PEAKTEMP.230 °C
SOLDERINGTIME200 °C
PREHEATING TIME150 °C, 90 + 30 SEC.
2.5 °C ± 0.5 °C/SEC.
3°C + 1 °C/ - 0.5 °C
TIGHTTYPICALLOOSEROOM
TEMPERATURE
PREHEATING RATE 3 °C + 1 °C/ - 0.5 ° C/SEC.REFLOW HEATING RATE 2.5 °C ± 0.5 ° C/SEC.
217 °C
RAMP-DOWN6 °C/SEC. MAX.
RAMP-UP3 °C/SEC. MAX.
150 - 200 °C
260 +0/-5 °C
t 25 °C to PEAK
60 to 150 SEC.
20-40 SEC.
TIME WITHIN 5°C of ACTUALPEAK TEMPERATURE
tp
tsPREHEAT
60 to 180 SEC.
tL
TL
TsmaxTsmin
25
Tp
TIME
TEMP
ERAT
URE
NO TES:THE TIME FROM 25°C to PEAK TEMPERATURE = 8 MINUTES MAX.Tsmax = 200 °C, Tsmin = 150 °C
Note:Non-halidefluxshouldbeused.
5
Table 1. IEC/EN/DIN EN 60747-5-2 Insulation Characteristics*
Description Symbol Characteristic UnitInstallationclassificationperDINVDE0110/1.89,Table1forratedmainsvoltage≤150Vrmsforratedmainsvoltage≤300Vrmsforratedmainsvoltage≤600Vrms
I–IVI–IVI–III
ClimaticClassification 55/100/21
PollutionDegree(DINVDE0110/1.89) 2
MaximumWorkingInsulationVoltage VIORM 891 Vpeak
InputtoOutputTestVoltage,Methodb**,VIORMx1.875=VPR,100%ProductionTestwithtm=1sec,Partialdischarge<5pC
VPR 1670 Vpeak
InputtoOutputTestVoltage,Methoda**,VIORMx1.5=VPR,TypeandSampleTest,tm=60sec,Partialdischarge<5pC
VPR 1336 Vpeak
HighestAllowableOvervoltage(TransientOvervoltagetini=10sec) VIOTM 6000 Vpeak
Safety-limitingvalues–maximumvaluesallowedintheeventofafailure.
CaseTemperature TS 175 °C
InputCurrent IS,INPUT 400 mA
OutputPower PS,OUTPUT 1200 mW
InsulationResistanceatTS,VIO=500V RS >109 W
* Isolation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in application.SurfacemountclassificationisclassAinaccordancewithCECCOO802.
** RefertotheoptocouplersectionoftheIsolationandControlComponentsDesigner’sCatalog,underProductSafetyRegulationssectionIEC/EN/DINEN60747-5-2,foradetaileddescriptionofMethodaandMethodbpartialdischargetestprofiles.
DependenceofSafetyLimitingValuesonTemperature.(takefromDSAV01-0579ENPg.7)
Regulatory Information
TheACPL-332Jisapprovedbythefollowingorganizations:
IEC/EN/DIN EN 60747-5-2Approvalunder:IEC60747-5-2:1997+A1:2002EN60747-5-2:2001+A1:2002DINEN60747-5-2(VDE0884Teil2):2003-01
ULApproval under UL 1577, component recognitionprogramuptoVISO=3750VRMS.FileE55361.
CSAApproval under CSA Component Acceptance Notice #5,FileCA88324.
6
Table 2. Insulation and Safety Related Specifications
Parameter Symbol ACPL-332J Units ConditionsMinimumExternalAirGap(Clearance)
L(101) 8.3 Mm Measuredfrominputterminalstooutputterminals,shortestdistancethroughair.
MinimumExternalTracking(Creepage)
L(102) 8.3 Mm Measuredfrominputterminalstooutputterminals,shortestdistancepathalongbody.
MinimumInternalPlasticGap(InternalClearance)
0.5 Mm Throughinsulationdistanceconductortoconductor,usuallythestraightlinedistancethicknessbetweentheemitteranddetector.
TrackingResistance(ComparativeTrackingIndex)
CTI >175 V DINIEC112/VDE0303Part1
IsolationGroup IIIa MaterialGroup(DINVDE0110,1/89,Table1)
Table 3. Absolute Maximum Ratings
Parameter Symbol Min. Max. Units NoteStorageTemperature TS -55 125 °C
OperatingTemperature TA -40 105 °C 2
OutputICJunctionTemperature TJ 125 °C 2
AverageInputCurrent IF(AVG) 25 mA 1
PeakTransientInputCurrent,(<1µspulsewidth,300pps)
IF(TRAN) 1.0 A
ReverseInputVoltage VR 5 V
“High”PeakOutputCurrent IOH(PEAK) 2.5 A 3
“Low”PeakOutputCurrent IOL(PEAK) 2.5 A 3
PositiveInputSupplyVoltage VCC1 -0.5 5.5 V
FAULTOutputCurrent IFAULT 8.0 mA
FAULTPinVoltage VFAULT -0.5 VCC1 V
TotalOutputSupplyVoltage (VCC2-VEE) -0.5 33 V
NegativeOutputSupplyVoltage (VE-VEE) -0.5 15 V 6
PositiveOutputSupplyVoltage (VCC2-VE) -0.5 33-(VE-VEE) V
GateDriveOutputVoltage VO(PEAK) -0.5 VCC2 V
PeakClampingSinkingCurrent IClamp 1.7 A
MillerClampingPinVoltage VClamp -0.5 VCC2 V
DESATVoltage VDESAT VE VE+10 V
OutputICPowerDissipation PO 600 mW 2
InputICPowerDissipation PI 150 mW 2
SolderReflowTemperatureProfile SeePackageOutlineDrawingssection
Table 4. Recommended Operating Conditions
Parameter Symbol Min. Max. Units NoteOperatingTemperature TA -40 105 °C 2
TotalOutputSupplyVoltage (VCC2-VEE) 15 30 V 7
NegativeOutputSupplyVoltage (VE-VEE) 0 15 V 4
PositiveOutputSupplyVoltage (VCC2-VE) 15 30-(VE-VEE) V
InputCurrent(ON) IF(ON) 8 12 mA
InputVoltage(OFF) VF(OFF) -3.6 0.8 V
7
Table 5. Electrical Specifications (DC)
Unlessotherwisenoted,alltypicalvaluesatTA=25°C,VCC2-VEE=30V,VE-VEE=0V;allMinimum/MaximumspecificationsareatRecommendedOperatingConditions.PositiveSupplyVoltageused.
Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. NoteFAULTLogicLowOutputVoltage
VFAULTL 0.1 0.4 V IFAULT=1.1mA,VCC1=5.5V
0.1 0.4 V IFAULT=1.1mA,VCC1=3.3V
FAULTLogicHighOutputCurrent
IFAULTH 0.02 0.5 µA VFAULT=5.5V,VCC1=5.5V
0.002 0.3 µA VFAULT=3.3V,VCC1=3.3V
HighLevelOutputCurrent
IOH -0.5 -1.5 A VO=VCC2-4 2,4,21
5
-2.0 A VO=VCC2–15 3
LowLevelOutputCurrent
IOL 0.5 1.5 A VO=VEE+2.5 3,5,22
5
2.0 A VO=VEE+15 3
LowLevelOutputCurrentDuringFaultCondition
IOLF 90 140 230 mA VOUT-VEE=14V 6
HighLevelOutputVoltage
VOH VCC-2.9 VCC-2.0 V IO=-650µA 4,6,23
7,8,923
LowLevelOutputVoltage
VOL 0.17 0.5 V IO=100mA 5,7,24
ClampPinThresholdVoltage
VtClamp 2.0 V
ClampLowLevelSinkingCurrent
ICL 0.35 1.1 A VO=VEE+2.5 8
HighLevelSupplyCurrent
ICC2H 2.5 5 mA IO=0mA 9,10,25,26
9
LowLevelSupplyCurrent
ICC2L 2.5 5 mA IO=0mA
BlankingCapacitorChargingCurrent
ICHG -0.13 -0.24 -0.33 mA VDESAT=2V 11,27 9,10
BlankingCapacitorDischargeCurrent
IDSCHG 10 30 mA VDESAT=7.0V 28
DESATThreshold VDESAT 6 6.5 7.5 V VCC2-VE>VUVLO- 12 9
UVLOThreshold VUVLO+ 10.5 11.6 12.5 V VO>5V 7,9,11
VUVLO- 9.2 10.3 11.1 V VO<5V 7,9,12
UVLOHysteresis (VUVLO+-VUVLO-)
0.4 1.3 V
ThresholdInputCurrentLowtoHigh
IFLH 2.0 8 mA IO=0mA,VO>5V
ThresholdInputVoltageHightoLow
VFHL 0.8 V
InputForwardVoltage VF 1.2 1.6 1.95 V IF=10mA
TemperatureCoefficientofInputForwardVoltage
DVF/DTA -1.3 mV/°C
InputReverseBreakdownVoltage
BVR 5 V IR=10mA
InputCapacitance CIN 70 pF f=1MHz,VF=0V
8
Table 6. Switching Specifications (AC)
Unlessotherwisenoted,alltypicalvaluesatTA=25°C,VCC2-VEE=30V,VE-VEE=0V;allMinimum/MaximumspecificationsareatRecommendedOperatingConditions.OnlyPositiveSupplyVoltageused.
Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. NotePropagationDelayTimetoHighOutputLevel
tPLH 100 180 250 ns Rg=10W,Cg=10nF,f=10kHz,DutyCycle=50%,IF=10mA,VCC2=30V
1,13,14,15,16,29
13,15
PropagationDelayTimetoLowOutputLevel
tPHL 100 180 250 ns 1,13,14,15,16,29
PulseWidthDistortion PWD -100 20 100 ns 14,17
PropagationDelayDifferenceBetweenAnyTwoPartsorChannels
(tPHL-tPLH)PDD
-350 350 ns 17,16
RiseTime tR 50 ns
FallTime tF 50 ns
DESATSenseto90%VODelay
tDESAT(90%) 0.15 0.5 µs CDESAT=100pF,Rg=10W,Cg=10nF,VCC2=30V
17,30,37
19
DESATSenseto10%VODelay
tDESAT(10%) 2 3 µs CDESAT=100pF,Rg=10W,Cg=10nF,VCC2=30V
18,19,20,30,37
DESATSensetoLowLevelFAULTSignalDelay
tDESAT(FAULT) 0.25 0.5 µs CDESAT=100pF,RF=2.1kW,Rg=10W,Cg=10nF,VCC2=30V
30,37 18
DESATSensetoDESATLowPropagationDelay
tDESAT(LOW) 0.25 µs CDESAT=100pF,RF=2.1kW,Rg=10W,Cg=10nF,VCC2=30V
30,37 19
DESATInputMute tDESAT(MUTE) 5 µs 37 20
RESETtoHighLevelFAULTSignalDelay
tRESET(FAULT) 0.3 1 2.0 µs CDESAT=100pF,RF=2.1kW,Rg=10W,Cg=10nF,VCC1=5.5V,VCC2=30V
0.8 1.5 2.5 µs CDESAT=100pF,RF=2.1kW,Rg=10W,Cg=10nF,VCC1=3.3V,VCC2=30V
OutputHighLevelCommonModeTransientImmunity
|CMH| 15 25 kV/µs TA=25°C,IF=10mAVCM=1500V,VCC2=30V
31,32,33,34
21
OutputLowLevelCommonModeTransientImmunity
|CML| 15 25 kV/µs TA=25°C,VF=0VVCM=1500V,VCC2=30V
31,32,33,34
22
9
Table 7. Package Characteristics
Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. NoteInput-OutputMomentaryWithstandVoltage
VISO 3750 Vrms RH<50%,t=1min.,TA=25°C
6,7
Input-OutputResistance RI-O >109 W VI-O=500V 7
Input-OutputCapacitance CI-O 1.3 pF freq=1MHz
OutputIC-to-Pins9&10ThermalResistance
q09-10 30 °C/W TA=25°C
Notes:1. Deratelinearlyabove70°Cfreeairtemperatureatarateof0.3mA/°C.2. Inordertoachievetheabsolutemaximumpowerdissipationspecified,pins4,9,and10requiregroundplaneconnectionsandmayrequire
airflow.SeetheThermalModelsectionintheapplicationnotesattheendofthisdatasheetfordetailsonhowtoestimatejunctiontemperatureandpowerdissipation.InmostcasestheabsolutemaximumoutputICjunctiontemperatureisthelimitingfactor.Theactualpowerdissipationachievablewilldependontheapplicationenvironment(PCBLayout,airflow,partplacement,etc.).SeetheRecommendedPCBLayoutsectionin the application notes for layout considerations. Output IC power dissipation is derated linearly at 10 mW/°C above 90°C. Input IC powerdissipationdoesnotrequirederating.
3. Maximum pulse width = 10 µs.This value is intended to allow for component tolerances for designs with IO peak minimum = 2.0 A. Deratelinearlyfrom3.0Aat+25°Cto2.5Aat+105°C.ThiscompensatesforincreasedIOPEAKduetochangesinVOLovertemperature.
4. Thissupplyisoptional.Requiredonlywhennegativegatedriveisimplemented.5. Maximumpulsewidth=50µs.6. SeetheSlowIGBTGateDischargeDuringFaultConditionsectionintheapplicationsnotesattheendofthisdatasheetforfurtherdetails.7. 15Vistherecommendedminimumoperatingpositivesupplyvoltage(VCC2-VE)toensureadequatemargininexcessofthemaximumVUVLO+
threshold of 12.5V. For High Level OutputVoltage testing,VOH is measured with a dc load current.When driving capacitive loads,VOH willapproachVCCasIOHapproacheszerounits.
8. Maximumpulsewidth=1.0ms.9. OnceVOoftheACPL-332Jisallowedtogohigh(VCC2-VE>VUVLO),theDESATdetectionfeatureoftheACPL-332Jwillbetheprimarysourceof
IGBTprotection.UVLOisneededtoensureDESATisfunctional.OnceVUVLO+>12.5V,DESATwillremainfunctionaluntilVUVLO-<9.2V.Thus,theDESATdetectionandUVLOfeaturesoftheACPL-332JworkinconjunctiontoensureconstantIGBTprotection.
10. SeetheDESATfaultdetectionblankingtimesectionintheapplicationsnotesattheendofthisdatasheetforfurtherdetails.11. Thisisthe“increasing”(i.e.turn-onor“positivegoing”direction)ofVCC2-VE12. Thisisthe“decreasing”(i.e.turn-offor“negativegoing”direction)ofVCC2-VE13. Thisloadconditionapproximatesthegateloadofa1200V/150AIGBT.14. PulseWidthDistortion(PWD)isdefinedas|tPHL-tPLH|foranygivenunit.15. AsmeasuredfromIFtoVO.16. ThedifferencebetweentPHLandtPLHbetweenanytwoACPL-332Jpartsunderthesametestconditions.17. AsmeasuredfromANODE,CATHODEofLEDtoVOUT18. ThisistheamountoftimefromwhentheDESATthresholdisexceeded,untiltheFAULToutputgoeslow.19. ThisistheamountoftimetheDESATthresholdmustbeexceededbeforeVOUTbeginstogolow,andtheFAULToutputtogolow.Thisissupply
voltagedependent.20. AutoReset:ThisistheamountoftimewhenVOUTwillbeassertedlowafterDESATthresholdisexceeded.SeetheDescriptionofOperation(Auto
Reset)topicintheapplicationinformationsection.21. Commonmodetransient immunity inthehighstate is themaximumtolerabledVCM/dtofthecommonmodepulse,VCM,toassurethatthe
outputwillremaininthehighstate(i.e.,VO>15VorFAULT>2V).A100pFanda2.1kΩpull-upresistorisneededinfaultdetectionmode.22. Common mode transient immunity in the low state is the maximum tolerable dVCM/dt of the common mode pulse,VCM, to assure that the
outputwillremaininalowstate(i.e.,VO<1.0VorFAULT<0.8V).23. ToclamptheoutputvoltageatVCC-3VBE,apull-downresistorbetweentheoutputandVEEisrecommendedtosinkastaticcurrentof650µA
whiletheoutputishigh.SeetheOutputPull-DownResistorsectionintheapplicationnotesattheendofthisdatasheetifanoutputpull-downresistorisnotused.
10
Figure 2. IOH vs. temperature Figure 3. IOL vs. temperature
Figure 4. VOH vs. temperature Figure 5. VOL vs. temperature
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 105TA - TEMPERATURE - oC
I OH
-OUT
PUT
HIGH
CURR
ENT
-A
0
1
2
3
4
5
-40 -20 0 20 40 60 80 105TA - TEMPERATURE - o C
I OL
-OUT
PUT
LOW
CURR
ENT
-----VOUT =VEE +15V___VOUT =VEE +2.5V
0
0.05
0.1
0.15
0.2
0.25
-40 -20 0 20 40 60 80 105TA - TEMPERATURE - o C
V OL
-OUT
PUT
LOW
VOLT
AGE
-V
Figure 1. VOUT propagation delay waveforms
IF
V OUT
tPHLtPLH
t ft r
10%
50%
90%
-2.5
-2
-1.5
-1
-0.5
0
-40 -20 0 20 40 60 80 105
I OUT = -650uA
TA - TEMPERATURE - oC
(VOH
-VCC
)-HI
GHOU
TPUT
VOLT
AGE
DROP
-V
____
11
Figure 8. ICL vs. temperature
0
1
2
3
4
-40 -20 0 20 40 60 80 105
TA -TEMPERATURE- o C
I CL-C
LAMP
LOW
LEVE
NSI
NKIN
GCU
RREN
T
15 20 25 302.25
2.35
2.45
2.55
2.65
VCC2 - OUTPUR SUPPLY VOLTAGE - V
I CC2 -
OUT
PUT S
UPPL
Y CU
RREN
T - m
A
---------I Cc 2H_________ICC2L
2.00
2.25
2.50
2.75
3.00
3.25
3.50
-40 -20 0 20 40 60 80 105TA - TEMPERATURE - oC
I CC2
-OUT
PUTS
UPPL
YCU
RREN
T-mA - ---- ----I CC2 H
_________ICC2L
-0.35
-0.30
-0.25
-0.20
-40 -20 0 20 40 60 80 105
TA - TEMPERATURE - o C
I CH-B
LANK
ING
CAPA
CITO
RCH
ARGI
NGCU
RREN
T-m
A
Figure 9. ICC2 vs. temperature
Figure 10. ICC2 vs. VCC2 Figure 11. ICHG vs. temperature
28.0
28.5
29.0
29.5
30.0
0 0.2 0.4 0.6 0.8 1
IOH - OUTPUT HIGH CURRENT - A
V OH
-HIG
HOU
TPUT
VOLT
AGE
DROP
-V
_ _ _ _ 105 oC______ 25 oC--------- -40 oC
Figure 6. VOH vs. IOH Figure 7. VOL vs. IOL
0
1
2
3
4
5
6
7
8
0 0.5 1 1.5 2 2.5IoL - OUTPUT LOW CURRENT - A
V OL
-LOW
OUTP
UTVO
LTAG
EDR
OP-V
_ _ _ _ 105 o C______ 25 o C--------- -40 o C
12
Figure 14. Propagation delay vs. supply voltage
100
150
200
250
300
15 20 25 30Vcc - SUPPLY VOLTAGE - V
T P -
PROP
AGAT
ION
DELA
Y - n
s
----------t PLH_______t PHL
100
150
200
250
300
0 10 20 30 40 50LOAD RESISTANCE - ohm
T P -
PROP
AGAT
ION
DELA
Y - m
s ----------t PLH_______t PHL
Figure 15. Propagation delay vs. load resistance
Figure 16. Propagation delay vs. load capacitance
0
100
200
300
0 10 20 30 40 50LOAD CAPACITANCE - nF
----------t PLH_______t PHL
T P -
PROP
AGAT
ION
DELA
Y - m
s
Figure 12. DESAT threshold vs. temperature Figure 13. Propagation delay vs. temperature
6.0
6.5
7.0
7.5
-40 -20 0 20 40 60 80 105TA - TEMPERATURE - o C
V DES
AT-D
ESAT
THRE
SHOL
D-V
100
150
200
250
300
-40 -20 0 20 40 60 80 105TA - TEMPERATURE - o C
T P-P
ROPA
GATI
ONDE
LAY
-ns
----------t PLH_______t PHL
13
Figure 18. DESAT sense to 10% VOUT delay vs. temperature
1.0
1.5
2.0
2.5
3.0
-40 -20 0 20 40 60 80 105
T A - TEMPERATURE - o C
TDESA
T-D
ESAT
Sens
eto1
0%Vo
Delay
-us
-------Vcc2 =15V_____Vcc2 =30V
Figure 19. DESAT sense to 10% VOUT delay vs. load resistance
0.0
1.0
2.0
3.0
4.0
10 20 30 40 50
LOAD RESISTANCE - ohm
-------Vcc2 =15V_____V cc2 =30V
TDESA
T10%
- DE
SAT
Sens
e to 1
0% V
o Dela
y - us
0.000
0.004
0.008
0.012
0 10 20 30 40 50
LOAD CAPACITANCE - nF
-------V cc2 =15V_____V cc2 =30V
TDESA
T10%
- DE
SAT
Sens
e to 1
0% V
o Dela
y - m
s
Figure 20. DESAT sense to 10% VOUT delay vs. load capacitance
100
150
200
250
300
-40 -20 0 20 40 60 80 105
TA - TEMPERATURE - o C
TDESA
T90%
-DES
ATSe
nset
o90%
VoDe
lay-n
s
Figure 17. DESAT sense to 90% VOUT delay vs. temperature
14
Figure 21. IOH Pulsed test circuit
Figure 22. IOL Pulsed test circuit
Figure 23. VOH Pulsed test circuit
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_10mA
+_
0.1µF
0.1µF
15V Pulsed
IOUT
30V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
VS
CATHODE
ANODE
ANODE
CATHODE
+_10mA
+_
0.1µF0.1µF
0.1µF0.1µF
15V Pulsed
IOUT
30V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_+_
0.1µF
0.1µF
15V Pulsed
IOUT
30V+_
0.1µF
0.1µF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
650µA
VOUT
30V
10mA10mA
15
Figure 24. VOL Pulsed test circuit
Figure 25. ICC2H test circuit
Figure 26. ICC2L test circuit
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
100mA
VOUT
30V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF0.1µF
0.1µF0.1µF
100mA
VOUT
30V
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
ICC2
30V
10mA
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF0.1µF
0.1µF0.1µF
ICC2
30V
10mA10mA
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF30V
I CC2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF0.1µF
0.1µF0.1µF30V
I CC2
16
Figure 27. ICHG Pulsed test circuit
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
ICHG
30V
10mA
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
ICHG
30V
10mA10mA
Figure 28. IDSCHG test circuit
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
7V
30V
+_
IDSCHG
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
7V
30V
+_
IDSCHG
Figure 29. tPLH, tPHL, tf, tr, test circuit
10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
0.1µF
0.1µF
VOUT
30V10Ω
10mA, 10kHz, 50% Duty Cycle
10nF10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_0.1µF0.1µF
VOUT
30V
10mA, 10kHz, 50% Duty Cycle
17
VCM
10
10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
0.1µF
SCOPE
30V
430Ω
2.1kΩ
0.1µF
15pF
5V
VCM
10Ω
10nF10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
0.1µF0.1µF
SCOPE
30V
0.1µF0.1µF
15pF15pF
5V5V
VCM
10Ω
10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
0.1µF
SCOPE
30V
430Ω
2.1kΩ
0.1µF
15pF
5V
VCM
10nF10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
0.1µF0.1µF
SCOPE
30V
0.1µF0.1µF
15pF15pF
5V5V
Figure 30. tDESAT fault test circuit
10nF
+_
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
5V
0.1µF
0.1µF
VOUT
30V10Ω
VIN
2.1kΩVFAULT
10mA 10nF
+_
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
VS
CATHODE
ANODE
ANODE
CATHODE
+_
5V
0.1µF0.1µF
0.1µF0.1µF
VOUT
30V
VIN
VFAULT
10mA10mA
Figure 31. CMR Test circuit LED2 off
Figure 32. CMR Test Circuit LED2 on
18
Figure 33. CMR Test circuit LED1 off
10
10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
0.1µF
SCOPE
30V
VCM
430Ω
2.1kΩ
0.1µF
15pF
5V
1010Ω
10nF10nF
0.1µF0.1µF
SCOPE
30V
Figure 34. CMR Test Circuit LED1 on
VCM
10
10nF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
0.1µF
SCOPE
30V
430
2.1k
0.1µF
15pF
5V
SCOPE
2.1kΩ
0.1µF
15pF
5V
Ω
Ω
19
Application Information
Product Overview Description
TheACPL-332Jisahighlyintegratedpowercontroldevicethat incorporates all the necessary components for acomplete,isolatedIGBT/MOSFETgatedrivecircuitwithfault protection and feedback into one SO-16 package.Active Miller clamp function eliminates the need ofnegative gate drive in most application and allows theuse of simple bootstrap supply for high side driver. Anoptically isolated power output stage drives IGBTs withpower ratings of up to 150 A and 1200V. A high speedinternal optical link minimizes the propagation delaysbetweenthemicrocontrollerandtheIGBTwhileallowingthetwosystemstooperateatverylargecommonmodevoltagedifferencesthatarecommonin industrialmotordrivesandotherpowerswitchingapplications.AnoutputIC provides local protection for the IGBT to preventdamage during over current, and a second optical linkprovides a fully isolated fault status feedback signal forthe microcontroller. A built in“watchdog” circuit, UVLOmonitorsthepowerstagesupplyvoltagetopreventIGBTcausedbyinsufficientgatedrivevoltages.ThisintegratedIGBTgatedriverisdesignedtoincreasetheperformanceandreliabilityofamotordrivewithoutthecost,size,andcomplexityofadiscretedesign.
Two light emitting diodes and two integrated circuitshoused in the same SO-16 package provide the inputcontrolcircuitry,theoutputpowerstage,andtwoopticalchannels. The output Detector IC is designed manufac-tured on a high voltage BiCMOS/Power DMOS process.The forward optical signal path, as indicated by LED1,transmitsthegatecontrolsignal.Thereturnopticalsignalpath, as indicated by LED2, transmits the fault statusfeedbacksignal.
Under normal operation, the LED1 directly controls theIGBT gate through the isolated output detector IC, andLED2 remains off. When an IGBT fault is detected, theoutputdetectorICimmediatelybeginsa“soft”shutdownsequence, reducing the IGBT current to zero in a con-trolled manner to avoid potential IGBT damage frominductiveovervoltages.Simultaneously, this fault statusistransmittedbacktotheinputviaLED2,wherethefaultlatch disables the gate control input and the active lowfaultoutputalertsthemicrocontroller.
During power-up, the Under Voltage Lockout (UVLO)feature prevents the application of insufficient gatevoltage to the IGBT, by forcing the ACPL-332J’s outputlow.Oncetheoutputisinthehighstate,theDESAT(VCE)detection feature of the ACPL-332J provides IGBT pro-tection. Thus, UVLO and DESAT work in conjunction toprovideconstantIGBTprotection.
Recommended Application Circuit
The ACPL-332J has an LED input gate control, and anopen collector fault output suitable for wired ‘OR’ ap-plications. The recommended application circuit shownin Figure 36 illustrates a typical gate drive implementa-tionusingtheACPL-332J.Thefollowingdescribesaboutdriving IGBT. However, it is also applicable to MOSFET.DependingupontheMOSFETorIGBTgatethresholdre-quirements,designersmaywanttoadjusttheVCCsupplyvoltage (RecommendedVCC = 17.5V for IGBT and 12.5VforMOSFET).
The two supply bypass capacitors (0.1 µF) provide thelarge transient currents necessary during a switchingtransition.Becauseofthetransientnatureofthechargingcurrents,a lowcurrent (5mA)powersupplysuffices.ThedesaturationdiodeDDESAT600V/1200Vfastrecoverytype,trr below 75ns (e.g. ERA34-10) and capacitor CBLANK arenecessary external components for the fault detectioncircuitry.ThegateresistorRGservesto limitgatechargecurrent and controls the IGBT collector voltage riseand fall times. The open collector fault output has apassivepull-upresistorRF(2.1kW)anda330pFfilteringcapacitor, CF. A 47 kW pull down resistor RPULL-DOWN onVOUT provides a predictable high level output voltage(VOH). In this application, the IGBT gate driver will shutdown when a fault is detected and fault reset by nextcycleofIGBTturnon.Applicationnotesarementionedattheendofthisdatasheet.
Figure 35. Block Diagram of ACPL-332J
SHIELD
SHIELD
DRIVER
VE
DESAT
VCC2
VOUT
VCLAMP
VEE
VCC1
VS
FAULT
ANODE
CATHODE
VCLAMP
VLED
6, 7
5, 8
2
3
1, 4
13
11
14
9, 12
10
16
15
DESAT
UVLO
LED1
LED2
SHIELD
SHIELD
DRIVER
VE
DESAT
VCC2
VOUT
VCLAMP
VEE
VCC1
VS
FAULT
ANODE
CATHODE
VCLAMP
VLED
6, 7
5, 8
2
3
1, 4
13
11
14
9, 12
10
16
15
DESAT
UVLO
LED1
LED2
20
Description of Operation
Normal Operation
During normal operation,VOUT of the ACPL-332J is con-trolled by input LED current IF (pins 5, 6, 7 and 8), withthe IGBT collector-to-emitter voltage being monitoredthroughDDESAT.TheFAULToutputishigh.SeeFigure37.
Fault Condition
TheDESATpinmonitors the IGBTVcevoltage.WhenthevoltageontheDESATpinexceeds6.5VwhiletheIGBTison,VOUTisslowlybroughtlowinorderto“softly”turn-offthe IGBT and prevent large di/dt induced voltages. Also
Figure 37. Fault Timing diagram
Figure 36. Recommended application circuit (Single Supply) with desaturation detection and active Miller Clamp
activated is an internal feedback channel which bringsthe FAULT output low for the purpose of notifying themicro-controllerofthefaultcondition.
Fault Reset
Oncefaultisdetected,theoutputwillbemutedfor5µs(minimum). All input LED signals will be ignored duringthe mute period to allow the driver to completely softshut-downtheIGBT.ThefaultmechanismcanberesetbythenextLEDturn-onafterthe5us(minimum)mutetime.SeeFigure37.
+_
+_
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_RG
100 Ω
CBLANK
DDESAT
Q1
Q2
+VCE-
RF
RRPULL-DOWN
+ HVDC
- HVDC
3-PHASEAC
+VCE-
0.1µF 0.1µF
0.1µF
CF
7
+_
-
IF
VDESAT
VOUT
FAULT
6.5V50%
tDESAT(LOW)
10%
tDESAT(10%)
90%
tDESAT(90%)
50%tDESAT(FAULT)
tDESAT(MUTE))
50%
tRESET(FAULT)
Reset doneduring thenext LEDturn-on
)
)
))
)
tBLANK
21
Output Control
Theoutputs(VOUTandFAULT)oftheACPL-332Jarecon-trolled by the combination of IF, UVLO and a detectedIGBTDesatcondition.OnceUVLOisnotactive(VCC2-VE>VUVLO),VOUTisallowedtogohigh,andtheDESAT(pin14)detectionfeatureoftheACPL-332Jwillbetheprimarysource of IGBT protection. UVLO is needed to ensureDESAT is functional. Once VUVLO+ > 10.5 V, DESAT willremain functional untilVUVLO- < 11.1V.Thus, the DESATdetection and UVLO features of the ACPL-332J work inconjunctiontoensureconstantIGBTprotection.
Desaturation Detection and High Current Protection
TheACPL-332Jsatisfiesthesecriteriabycombiningahighspeed, high output current driver, high voltage opticalisolation between the input and output, local IGBT de-saturation detection and shut down, and an opticallyisolated fault status feedback signal into a single 16-pinsurfacemountpackage.
The fault detection method, which is adopted in theACPL-332J, is to monitor the saturation (collector)voltageoftheIGBTandtotriggeralocalfaultshutdownsequence if the collector voltage exceeds a predeter-mined threshold. A small gate discharge device slowlyreduces the high short circuit IGBT current to preventdamaging voltage spikes. Before the dissipated energycan reach destructive levels, the IGBT is shut off. DuringtheoffstateoftheIGBT,thefaultdetectcircuitryissimplydisabledtopreventfalse‘fault’signals.
The alternative protection scheme of measuring IGBTcurrent to prevent desaturation is effective if the shortcircuit capability of the power device is known, butthis method will fail if the gate drive voltage decreasesenough to only partially turn on the IGBT. By directlymeasuringthecollectorvoltage,theACPL-332JlimitsthepowerdissipationintheIGBTevenwithinsufficientgatedrivevoltage.Anothermoresubtleadvantageofthede-saturationdetectionmethodisthatpowerdissipationinthe IGBT is monitored, while the current sense methodrelies on a preset current threshold to predict the safelimitofoperation.Therefore,anoverlyconservativeovercurrentthresholdisnotneededtoprotecttheIGBT.
IF UVLO (VCC2 – VE) Desat Condition Detected on Pin 14 Pin 3 (FAULT) Output VOUT
X Active X X Low
X X Yes Low Low
OFF X X X Low
ON NotActive No High High
Slow IGBT Gate Discharge during Fault Condition
Whenadesaturationfaultisdetected,aweakpull-downdevice in the ACPL-332J output drive stage will turn onto‘softly’turnofftheIGBT.Thisdeviceslowlydischargesthe IGBT gate to prevent fast changes in drain currentthat could cause damaging voltage spikes due to leadandwire inductance.Duringtheslowturnoff, the largeoutput pull-down device remains off until the outputvoltagefallsbelowVEE+2Volts,atwhichtimethelargepulldowndeviceclampstheIGBTgatetoVEE.
DESAT Fault Detection Blanking Time
TheDESATfaultdetectioncircuitrymustremaindisabledforashorttimeperiodfollowingtheturn-onoftheIGBTto allow the collector voltage to fall below the DESATthreshold. This time period, called the DESAT blankingtime is controlled by the internal DESAT charge current,the DESAT voltage threshold, and the external DESATcapacitor.
The nominal blanking time is calculated in terms ofexternal capacitance (CBLANK), FAULT threshold voltage(VDESAT), and DESAT charge current (ICHG) as tBLANK =CBLANK xVDESAT / ICHG.The nominal blanking time withtherecommended100pFcapacitoris100pF*6.5V/240µA=2.7µsec.
Thecapacitancevaluecanbescaledslightlytoadjusttheblankingtime,thoughavaluesmallerthan100pFisnotrecommended. This nominal blanking time representsthelongesttimeitwilltakefortheACPL-332JtorespondtoaDESATfaultcondition.IftheIGBTisturnedonwhilethe collector and emitter are shorted to the supply rails(switching into a short), the soft shut-down sequencewillbeginafterapproximately3µsec.IftheIGBTcollectorandemitterareshortedtothesupplyrailsaftertheIGBTisalreadyon,theresponsetimewillbemuchquickerdueto theparasiticparallelcapacitanceof theDESATdiode.The recommended 100pF capacitor should provideadequate blanking as well as fault response times formostapplications.
22
Figure 38. Output pull-down resistor.
Under Voltage Lockout
The ACPL-332J UnderVoltage Lockout (UVLO) feature isdesigned to prevent the application of insufficient gatevoltage to the IGBT by forcing the ACPL-332J outputlow during power-up. IGBTs typically require gatevoltages of 15 V to achieve their rated VCE(ON) voltage.Atgatevoltagesbelow13Vtypically,theVCE(ON)voltageincreases dramatically, especially at higher currents. Atverylowgatevoltages(below10V),theIGBTmayoperatein the linear region and quickly overheat. The UVLOfunctioncausestheoutputtobeclampedwhenever in-sufficient operating supply (VCC2) is applied. Once VCC2exceedsVUVLO+(thepositive-goingUVLOthreshold),theUVLOclampisreleasedtoallowthedeviceoutputtoturnoninresponsetoinputsignals.AsVCC2isincreasedfrom0V(atsomelevelbelowVUVLO+),firsttheDESATprotec-tioncircuitrybecomesactive.AsVCC2isfurtherincreased(above VUVLO+), the UVLO clamp is released. Before thetime the UVLO clamp is released, the DESAT protectionis already active. Therefore, the UVLO and DESAT Faultdetectionfeatureworktogethertoprovideseamlesspro-tectionregardlessofsupplyvoltage(VCC2).
Active Miller Clamp
A Miller clamp allows the control of the Miller currentduringahighdV/dtsituationandcaneliminate theuseofanegativesupplyvoltageinmostoftheapplications.During turn-off, the gate voltage is monitored and theclampoutputisactivatedwhengatevoltagegoesbelow2V (relative to VEE). The clamp voltage is VOL+2.5V typforaMillercurrentupto1100mA.TheclampisdisabledwhentheLEDinputistriggeredagain.
Other Recommended Components
The application circuit in Figure 36 includes an outputpull-down resistor, a DESAT pin protection resistor, aFAULTpincapacitor,andaFAULTpinpullupresistorandActiveMillerClampconnection.
Output Pull-Down Resistor
During the output high transition, the output voltagerapidlyrisestowithin3diodedropsofVCC2.Iftheoutputcurrent then drops to zero due to a capacitive load, theoutput voltage will slowly rise from roughlyVCC2-3(VBE)toVCC2withinaperiodofseveralmicroseconds.To limitthe output voltage to VCC2-3(VBE), a pull-down resistor,RPULL-DOWNbetweentheoutputandVEEisrecommendedtosinkastaticcurrentofseveral650µAwhiletheoutputis high. Pull-down resistor values are dependent on theamountofpositivesupplyandcanbeadjustedaccordingtotheformula,Rpull-down=[VCC2-3*(VBE)]/650µA.
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2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
RG
RPULL-DOWN
VCC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
RG
RPULL-DOWN
VCC
DESAT Pin Protection Resistor
The freewheeling of flyback diodes connected acrossthe IGBTs can have large instantaneous forward voltagetransients which greatly exceed the nominal forwardvoltageof thediode.Thismayresult ina largenegativevoltagespikeontheDESATpinwhichwilldrawsubstan-tialcurrentoutofthedriver ifprotection isnotused.TolimitthiscurrenttolevelsthatwillnotdamagethedriverIC, a 100 ohm resistor should be inserted in series withtheDESATdiode.TheaddedresistancewillnotaltertheDESATthresholdortheDESATblankingtime.
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3
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5
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8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
RG
VCC
100 Ω
100pFDDESAT
Figure 39. DESAT pin protection.
Capacitor on FAULT Pin for High CMR
Rapid common mode transients can affect the fault pinvoltagewhilethefaultoutputis inthehighstate.A330pFcapacitorshouldbeconnectedbetweenthefaultpinandgroundtoachieveadequateCMOSnoisemarginsatthe specified CMR value of 15 kV/µs.The added capaci-tance does not increase the fault output delay when adesaturationconditionisdetected.
23
Figure 41. Large IGBT drive with negative gate drive, external booster. VCLAMP control secondary discharge path for higher power application.
Figure 40. IGBT drive with negative gate drive, external booster and desaturation detection (VCLAMP should be connected to VEE when it is not used) VCLAMP is used as secondary gate discharge path. * indicates component required for negative gate drive topology
Pull-up Resistor on FAULT Pin
TheFAULTpinisanopencollectoroutputandthereforerequires a pull-up resistor to provide a high-level signal.Also the FAULT output can be wire‘OR’ed together withother types of protection (e.g. over-temperature, over-voltage,over-current)toalertthemicrocontroller.
Other Possible Application Circuit (Output Stage)
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7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
+_
RG
Q1
Q2
+VCE
-
RPULL-DOWN
+ HVDC
- HVDC
3-PHASEAC
+VCE
-
0.1µF 0.1µF
0.1µF
Optional R1
Optional R2
RGOptional R1
Optional R2
*
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2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VE
VLED
DESAT
VCC2
VEE
VOUT
VCLAMP
VEE
VS
VCC1
FAULT
VS
CATHODE
ANODE
ANODE
CATHODE
+_
+_
RG
Q1
Q2
+VCE
-
RPULL-DOWN
+ HVDC
- HVDC
3-PHASEAC
+VCE
-
0.1µF 0.1µF
0.1µF
Optional R1
Optional R2
R3
9
RGOptional R1
Optional R2
R3
*
Related Application Notes
AN5314–ActiveMillerClamp
AN5324-DesaturationFaultDetection
AN5315–“Soft”Turn-offFeature
AN1087–ThermalDataforOptocouplers
AN1043–Common-ModeNoise:SourcesandSolutions
AN02-0310EN-PlasticsOptocouplerProductESDandMoistureSensitivity
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Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. AV02-0120EN - November 6, 2008
