DATA SHEET MMIC Product Line - Vectrawave · 2019-06-20 · DATA SHEET MMIC Product Line R&D Office : 4, Rue André Marie Ampère - 22300 - Lannion - France Head Office ... Product

DATA SHEET MMIC Product Line

R&D Office : 4, Rue André Marie Ampère - 22300 - Lannion - France

Head Office : Z.I. des Loges, rue de la Croix Blanche - 78350 - Les Loges en Josas - France http://www.vectrawave.com + 33 (0)2 57 63 00 20 email : [email protected]

VWA_5000062_AA_DS_Rev1.2.doc May 19 VectraWave Proprietary information subject to change without notice Page 1 / 8

Description

The VWA 5000062 AA is a distributed amplifier designed on a 0.15 µm pHEMT process. The device is capable of more

than +22dBm of output power at saturation regime, up to 40GHz. And more than +16dBm of output power at 1 dB of

gain compression, up to 40GHz. It provides 15 dB of linear gain from DC to 40 GHz, with an excellent group delay. The

design has been optimized to provide high efficiency. The supply current is as low as 180 mA when operating with

VD=+6V.The die include a 50Ω transmission line for calibration system.

Applications

Wide band MPA Telecommunications format NRZ, PAM4 56GBPS.

Radar / ECM / ECCM

Test and measurement

Broadband / datalink communication

Features

Distributed amplifier pHEMT GaAs MMIC

Wide band: DC to 40 GHz. Flat group delay

50ΩRF Single ended input and output

DC coupled IN, DC coupled Out

P1dB >+16dBm DC to 40GHz

High output Psat >+22dBm DC to 40GHz

Small signal gain: 15dB from 2GHz to 40GHz

Power supply: 180 mA @ +6V 2.27 x 1.574 x 0.1mm (VWA 5000062 AA)

Tools

S2P file can be provided for system design simulation.

DXF file is available for mechanical design. Evaluation board available on request.

VWA 5000062 AA

DC to 40 GHz – 15 dB – 22 dBm Medium Power Amplifier

http://www.vectrawave.com/

mailto:[email protected]


R&D Office : 4, Rue André Marie Ampère - 22300 - Lannion - France Head Office : Z.I. des Loges, rue de la Croix Blanche - 78350 - Les Loges en Josas - France

http://www.vectrawave.com + 33 (0)2 57 63 00 20 email : [email protected] VWA_5000062_AA_DS_Rev1.2.doc May 19 VectraWave Proprietary information subject to change without notice Page 2 / 8

Ordering information

Product code Definition

VWA 5000062 AA Single Die

VWA 0000920 AB VWA5000062 AA Evaluation board

Functional diagram







Typical Characteristics (Ambient temperature T= 25°C)

Operating conditions:

VD = +6V, VG2=+2.5V, ID = 180 mA.

Parameter measured Symbol Min Typ Max Unit

Frequency range F DC 40 GHz

Small signal gain G 15 dB

Small signal gain flatness ΔG +/-0.5 dB

Input return loss S11 -10 -8 dB

Output return loss S22 -13

dB

Noise figure (@10GHz) NF 3 dB

Output P1 dB from DC to 40GHz P1dB 16 18 dBm

Saturated output power PSat 22 dBm

Drain supply voltage VD 6 V

Supply current ID 180 mA

Absolute maximum ratings

Maximum ratings Symbols Min Max Units

Positive external DC bias voltage VD +9 V

Gate control input access for second stage VG2 -1 VD/2 V

RF input power (In) Pin max 18 dBm

Soldering temperature process (max 20 Sec.) T process 325 °C

Continuous power dissipation (@ 85°C) Pcw 2 W

Storage temperature Tst -55 +85 °C

Operating temperature Top -40 +85 °C

Operation of this device above any of these parameters may cause permanent damages.

Application circuit

Note: The 1nF capacitors are MIM type and must be placed as close as possible to the die access.







Access description

Pin number Name Description Electrical interface

2 TL IN RF 50 Ohms line input

5 RF Input RF Amplifier input, this access is DC coupled

and internally matched to 50Ohms.

7 VG2

Drain termination load decoupling access. This access must be connected to a MIM

100pF or 1000pF capacitor, with a low serial

inductance bonding wire (the serial inductance impacts the Output return loss)

8 VDLoad

Drain termination load decoupling access. This access must be connected to a MIM

100pF or 1000pF capacitor, with a low serial

inductance bonding wire (the serial inductance impacts the Output return loss)

10 RF Output

HF Amplifier output, this access is DC

coupled and internally matched to 50Ohms. It is also used to bias the drain current (ID),

by using a wide bandwidth external Bias-T structure.

13 TL OUT RF 50 Ohms line output

15 VG1_A

Gate control input access for first stage

distributed amplifier structure. Unused for nominal biasing conditions.

16 VG1_B

Gate control output access for first stage distributed amplifier structure. Unused for

nominal biasing conditions.

Die Bottom GND Die must be connected to HF and DC Ground







Typical performances measurements (Ambient temperature T= 25°C)

Operating conditions: VD=+6V, VG2=+2.5V, ID=180mA,

Measurement conditions : Test under probes

|S21| (dB) Group Delay (ps):

|S11|(dB): |S22|(dB):







Noise figure:

P1dB: PSAT:

Output power VS Input power: Drain Current VS Input power :







Biasing procedure

Mechanical view

Pin out and pad position

Die thickness = 100µm

Die bottom must be connected to ground (RF and DC)

Switch on

1. Set VD to +6V 2. Set VG2 to +2.5V

3. Turn RF Input ON

Switch off

1. Turn RF Input OFF 2. Decrease VG2 to 0V

3. Decrease VD to 0V







Typical Assembly diagram

Handling

This product is sensitive to electrostatic discharge and should not be handled except at a static free workstation. Take

precautions to prevent ESD; use wrist straps, grounded work surfaces and recognized anti-static techniques when

handling the VWA 5000062 AA device.



Documents

DATA SHEET MMIC Product Line - Vectrawave · 2019-06-20 · DATA SHEET MMIC Product Line R&D Office : 4, Rue André Marie Ampère - 22300 - Lannion - France Head Office ... Product