Datasheet / FS820R08A6P2B

HybridPACK™DriveModule

FS820R08A6P2B

FinalDataSheetV3.0,2017-03-09

AutomotiveHighPower

2

FS820R08A6P2BHybridPACK™DriveModule

V3.0,2017-03-09Final Data Sheet

1Features/DescriptionHybridPACK™DrivemodulewithEDT2IGBTandDiode

T

T

T

VCES = 750VIC nom = 820A / ICRM = 1640A

TypicalApplications DescriptionThe HybridPACKTM Drive is a very compactsix-pack module (750V/820A) optimized for hybridand electric vehicles. The power moduleimplements the new EDT2 IGBT generation, whichis an automotive Micro-Pattern Trench-Field-Stopcell design optimized for electric drive trainapplications. The chipset has benchmark currentdensity combined with short circuit ruggedness andincreased blocking voltage for reliable inverteroperation under harsh environmental conditions.The EDT2 IGBTs also show excellent light loadpower losses, which helps to improve systemefficiency over a real driving cycle. The EDT2 IGBTwas optimized for applications with switchingfrequencies in the range of 10 kHz.

The new HybridPACKTM Drive power module familycomes with mechanical guiding elementssupporting easy assembly processes for customers.Furthermore, the press-fit pins for the signalterminals avoid additional time consuming selectivesolder processes, which provides cost savings onsystem level and increases system reliability. Thedirect cooled baseplate with PinFin structure in theFS820R08A6P2B product best utilizes theimplemented chipset and shows superior thermalcharacteristics. Due to the high clearance &creepage distances, the module family is also wellsuited for increased system working voltages andsupports modular inverter approaches.

• AutomotiveApplications• HybridElectricalVehicles(H)EV• MotorDrives• CommercialAgricultureVehicles

ElectricalFeatures• Blockingvoltage750V• LowVCEsat

• LowSwitchingLosses• LowQgandCres• LowInductiveDesign• Tvjop=150°C• Short-time extended Operation Temperature Tvjop=175°C

MechanicalFeatures• 4.2kVDC1secInsulation• HighCreepageandClearanceDistances• Compactdesign• HighPowerDensity• DirectCooledBasePlate• GuidingelementsforPCBandcoolerassembly• IntegratedNTCtemperaturesensor• PressFITContactTechnology• RoHScompliant• UL94V0moduleframe

ProductName OrderingCodeFS820R08A6P2B SP001499708

3



2IGBT,Inverter2.1MaximumRatedValuesParameter Conditions Symbol Value UnitCollector-emittervoltage Tvj = 25°C VCES 750 V

Implementedcollectorcurrent ICN 820 A

ContinuousDCcollectorcurrent TF = 80°C, Tvj max = 175°C IC nom 4501) A

Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1640 A

Totalpowerdissipation TF = 75°C, Tvj max = 175°C Ptot 7141) W

Gate-emitterpeakvoltage VGES +/-20 V

2.2CharacteristicValues min. typ. max.

Collector-emittersaturationvoltage IC = 450 A, VGE = 15 VIC = 450 A, VGE = 15 VIC = 450 A, VGE = 15 V

IC = 820 A, VGE = 15 V Tvj = 25°CIC = 820 A, VGE = 15 V Tvj = 175°C

VCE sat

1.101.151.15

1.301.50

1.35

V

Tvj = 25°CTvj = 150°CTvj = 175°C

Gatethresholdvoltage IC = 9.60 mA, VCE = VGE

Tvj = 175°C VGEth4.90 5.80

4,106.50 VTvj = 25°C

Gatecharge VGE = -8 V ... 15 V, VCE = 400V QG 4.40 µC

Internalgateresistor RGint 0.7 ΩTvj = 25°C

Inputcapacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cies 80.0 nFTvj = 25°C

Outputcapacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Coes 1.00 nFTvj = 25°C

Reversetransfercapacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Cres 0.30 nFTvj = 25°C

Collector-emittercut-offcurrent VCE = 750 V, VGE = 0 VVCE = 750 V, VGE = 0 V Tvj = 175°C ICES 5

1.0 mATvj = 25°C

Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C

Turn-ondelaytime,inductiveload IC = 450 A, VCE = 400 VVGE = -8 V / +15 VRGon = 2.4 Ω

td on

0.280.290.30

µsTvj = 25°CTvj = 150°CTvj = 175°C

Risetime,inductiveload IC = 450 A, VCE = 400 VVGE = -8 V / +15 VRGon = 2.4 Ω

tr0.070.080.08


Turn-offdelaytime,inductiveload IC = 450 A, VCE = 400 VVGE = -8 V / +15 VRGoff = 5.1 Ω

td off

0.941.051.05


Falltime,inductiveload IC = 450 A, VCE = 400 VVGE = -8 V / +15 VRGoff = 5.1 Ω

tf0.040.050.06


Turn-onenergylossperpulse IC = 450 A, VCE = 400 V, LS = 20 nHVGE = -8 V / +15 VRGon = 2.4 Ωdi/dt (Tvj 25°C) = 5500 A/µsdi/dt (Tvj 150°C) = 5000 A/µs

Eon

13.517.518.0 mJ

Tvj = 25°CTvj = 150°CTvj = 175°C

Turn-offenergylossperpulse IC = 450 A, VCE = 400 V, LS = 20 nHVGE = -8 V / +15 VRGoff = 5.1 Ωdv/dt (Tvj 25°C) = 3100 V/µsdv/dt (Tvj 150°C) = 2500 V/µs

Eoff

23.529.030.0 mJ

Tvj = 25°CTvj = 150°CTvj = 175°C

SCdata VGE ≤ 15 V, VCC = 400 VVCEmax = VCES -LsCE ·di/dt ISC

48003900 ATvj = 25°C

Tvj = 175°CtP ≤ 6 µs, tP ≤ 3 µs,

Thermalresistance,junctiontocoolingfluid perIGBT;∆V/∆t=10dm³/min,TF=75°C RthJF 0.1202) 0.1402) K/W

Temperatureunderswitchingconditions top continuousfor 10s within a period of 30s, occurence maximum 3000times over lifetime

Tvj op

-40150

1503)

175 °C

1) Verified by characterization / design not by test.2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

4



3Diode,Inverter3.1MaximumRatedValuesParameter Conditions Symbol Value UnitRepetitivepeakreversevoltage Tvj = 25°C VRRM 750 V

Implementedforwardcurrent IFN 820 A

ContinuousDCforwardcurrent IF 4501) A

Repetitivepeakforwardcurrent tP = 1 ms IFRM 1640 A

I²t-value VR = 0 V, tP = 10 ms, Tvj = 150°CVR = 0 V, tP = 10 ms, Tvj = 175°C I²t 19000

16000A²sA²s

3.2CharacteristicValues min. typ. max.

Forwardvoltage IF = 450 A, VGE = 0 VIF = 450 A, VGE = 0 VIF = 450 A, VGE = 0 V

IF = 820 A, VGE = 0 V Tvj = 25°CIF = 820 A, VGE = 0 V Tvj = 175°C

VF

1.451.301.25

1.701.60

1.65

V

Tvj = 25°CTvj = 150°CTvj = 175°C

Peakreverserecoverycurrent IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)VR = 400 VVGE = -8 V

IRM

250350370

ATvj = 25°CTvj = 150°CTvj = 175°C

Recoveredcharge IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)VR = 400 VVGE = -8 V

Qr

20.040.045.0

µCTvj = 25°CTvj = 150°CTvj = 175°C

Reverserecoveryenergy IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)VR = 400 VVGE = -8 V

Erec

7.0013.015.0

mJTvj = 25°CTvj = 150°CTvj = 175°C

Thermalresistance,junctiontocoolingfluid perdiode;∆V/∆t=10dm³/min,TF=75°C RthJF 0.1752) 0.2002) K/W

Temperatureunderswitchingconditions top continuousfor 10s within a period of 30s, occurence maximum 3000times over lifetime

Tvj op

-40150

1503)

175 °C

4NTC-Thermistor min. typ. max.

Parameter Conditions Symbol Value UnitRatedresistance TC = 25°C R25 5.00 kΩ

DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R 5 5 %

Powerdissipation TC = 25°C P25 20.0 mW

B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K



Specificationaccordingtothevalidapplicationnote.

1) Verified by characterization / design not by test.2) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

5



5ModuleParameter Conditions Symbol Value UnitIsolationtestvoltage RMS, f = 0 Hz, t = 1 sec VISOL 4.2 kV

Materialofmodulebaseplate Cu+Ni1)

Internalisolation basicinsulation(class1,IEC61140) Al2O32)

Creepagedistance terminaltoheatsinkterminaltoterminal dCreep 9.0

9.0 mm

Clearance terminaltoheatsinkterminaltoterminal dClear 4.5

4.5 mm

Comperativetrackingindex CTI > 200 min. typ. max.

Pressuredropincoolingcircuit ∆V/∆t = 10.0 dm³/min; TF = 75°C ∆p 643) mbar

Maximumpressureincoolingcircuit Tbaseplate < 40°CTbaseplate > 40°C(relative pressure)

p2.52.0 bar

Strayinductancemodule LsCE 8.0 nH

Moduleleadresistance,terminals-chip TF=25°C,perswitch RCC'+EE' 0.75 mΩ

Storagetemperature Tstg -40 125 °C

Mountingtorqueformodulmounting ScrewM4baseplatetoheatsinkScrewEJOTDeltaPCBtoframe M 1.80

0.452.000.50

2.200.554) Nm

Weight G 800 g

Maximum RMS module terminal current Tf = 75°C; TCt = 105°C ItRMS 500 A

1) Ni plated Cu baseplate.2) Improved Al2O3 ceramic.3) Cooler design and flow direction according to application note AN-HPD-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.4) EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY

6



6CharacteristicsDiagramsoutputcharacteristicIGBT,Inverter(typical)IC=f(VCE)VGE=15V

VCE [V]

IC [A

]

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,20

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600Tvj = 25°CTvj = 150°CTvj = 175°C

outputcharacteristicIGBT,Inverter(typical)IC=f(VCE)Tvj=150°C

VCE [V]

IC [A

]

0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,00

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600VGE = 19VVGE = 17VVGE = 15VVGE = 13VVGE = 11VVGE = 9V

transfercharacteristicIGBT,Inverter(typical)IC=f(VGE)VCE=20V

VGE [V]

IC [A

]

5 6 7 8 9 10 11 120

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600Tvj = 25°CTvj = 150°CTvj = 175°C

switchinglossesIGBT,Inverter(typical)Eon=f(IC),Eoff=f(IC),VGE=+15V/-8V,RGon=2.4Ω,RGoff=5.1Ω,VCE=400V

IC [A]

E [m

J]

0 100 200 300 400 500 600 700 800 9000

10

20

30

40

50

60

70Eon, Tvj = 150°CEoff, Tvj = 150°CEon, Tvj = 175°CEoff, Tvj = 175°C

7



switchinglossesIGBT,Inverter(typical)Eon=f(RG),Eoff=f(RG),VGE=+15V/-8V,IC=450A,VCE=400V

RG [Ω]

E [m

J]

0 2 4 6 8 10 12 14 16 18 20 22 240

20

40

60

80

100

120

140Eon, Tvj = 150°CEoff, Tvj = 150°CEon, Tvj = 175°CEoff, Tvj = 175°C

transientthermalimpedanceIGBT,InverterZthJF=f(t),coolerdesignaccordingtoAN-HPD-ASSEMBLY∆V/∆t=10dm³/min;Tf=75°C;50%water/50%ethylenglycol

t [s]

Zth

JF [K

/W]

0,001 0,01 0,1 1 100,001

0,01

0,1

1ZthJF : IGBT

i:ri[K/W]:τi[s]:

10,0050,001

20,050,03

30,0650,25

40,021,5

reversebiassafeoperatingareaIGBT,Inverter(RBSOA)IC=f(VCE)VGE=+15V/-8V,RGoff=5,1Ω,Tvj=175°C

VCE [V]

IC [A

]

0 100 200 300 400 500 600 700 8000

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600

1700

IC, ModulIC, Chip

thermalimpedanceIGBT,InverterRthJF=f(∆V/∆t),coolerdesignaccordingtoAN-HPD-AssemblyTf=75°C;50%water/50%ethylenglycol

∆V/∆t [dm³/min]

Rth

JF [K

/W]

4 5 6 7 8 9 10 11 12 13 140,134

0,136

0,138

0,140

0,142

0,144

0,146

0,148

0,150

0,152RthJF: IGBT

8



capacitycharcteristicIGBT,Inverter(typical)C=f(VCE)VGE=0V,Tvj=25°C,f=1MHz

VCE [V]

C [nF

]

0 100 200 300 400 5000,1

1

10

100

Cies

Coes

Cres

gatechargecharacteristicIGBT,Inverter(typical)VGE=f(QG)VCE=400V,IC=450A,Tvj=25°C

QG [µC]

VG

E [V

]

0 1 2 3 4 5-9

-6

-3

0

3

6

9

12

15QG

maximumallowedcollector-emittervoltageVCES = f(Tvj), verified by characterization / design not by testICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C

Tvj [°C]

VC

ES [V

]

-50 -25 0 25 50 75 100 125 150 175 200650

675

700

725

750

775

800VCES

forwardcharacteristicofDiode,Inverter(typical)IF=f(VF)

VF [V]

IF [A

]

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,20

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

1600Tvj = 25°CTvj = 150°CTvj = 175°C

9



switchinglossesDiode,Inverter(typical)Erec=f(IF),RGon=2.4Ω,VCE=400V

IF [A]

E [m

J]

0 100 200 300 400 500 600 700 800 9000

2

4

6

8

10

12

14

16

18

20

22Erec, Tvj = 150°CErec, Tvj = 175°C

switchinglossesDiode,Inverter(typical)Erec=f(RG),IF=450A,VCE=400V

RG [Ω]

E [m

J]

0 2 4 6 8 10 12 14 16 18 20 22 240

2

4

6

8

10

12

14

16

18

20Erec, Tvj = 150°CErec, Tvj = 175°C

transientthermalimpedanceDiode,InverterZthJF=f(t),coolerdesignaccordingtoAN-HPD-ASSEMBLY∆V/∆t=10dm³/min;Tf=75°C;50%water/50%ethylenglycol

t [s]

Zth

JC [K

/W]

0,001 0,01 0,1 1 100,001

0,01

0,1

1ZthJC : Diode

i:ri[K/W]:τi[s]:

10,0150,001

20,10,03

30,0650,25

40,021,5

thermalimpedanceDiode,InverterRthJF=f(∆V/∆t),coolerdesignaccordingtoAN-HPD-ASSEMBLYTf=75°C;50%water/50%ethylenglycol


Rth

JF [K

/W]

4 5 6 7 8 9 10 11 12 13 140,194

0,196

0,198

0,200

0,202

0,204

0,206

0,208

0,210

0,212

0,214RthJF: Diode

10



NTC-Thermistor-temperaturecharacteristic(typical)R=f(T)

TC [°C]

R[Ω

]

0 20 40 60 80 100 120 140 160100

1000

10000

100000Rtyp

pressuredropincoolingcircuit∆p=f(∆V/∆t),coolerdesignaccordingtoAN-HPD-ASSEMBLYTf=75°C;50%water/50%ethylenglycol


∆p [m

bar]

4 5 6 7 8 9 10 11 12 13 140

20

40

60

80

100

120∆p: Modul

11



7Circuitdiagram

G1

E1

C1

G2

E2

C2

P1

1

N1

G3

E3

C3

G4

E4

C4

P2

2

N2

G5

E5

C5

G6

E6

C6

P3

3

N3

T

T11

T12

T

T21

T22

T

T31

T32

12



8Packageoutlines

^

_>R>>

W"R>>WVR>>!>R$

Z>RV%!>R$

ZWR"%!>$R"%!>R$

%R>>!>R$

ZRV%!>R$

!&R"%""R"%!>R$

$R>>!>R#

C ` I

a#;#a";"a!;!

)" B" \"

b!

b"

)!

B!\!

)$ B$ \$

b#

b$

)#

B#\#

)& B& \&

b%

b&

)%

B%\%

>R>>

W"R>>

>R>>

!%R%>!>R%

&&R%>!>R%

'

">R% * B#

"!R&'

( )Wc

!$R>> !>R"

&cQ;!F;#da!Fa#S

!R>>!>R!%

[

%R%>!>R!"

">R& [ \#

"!R&'

( )

\

f %R%>!>R!"

">R& f T#

"!R&'

( )

T #cQCd`dIS

#c

!$R>>!>R"

!&R>>!>R"

&c

&c&c

!R>>!>R!%

#c

&c

#c

(

)

%R#>!>R!%g $(

&R#%!>R%

*

B)

! " #$% & # '

()* " # & # '

*

(

1+ J+ ^+ 1- J- ^-

`,

`-J,^,

`+

`#

1# 1,

J#^#

1. J. ^.

`%

`.

1%

J%^%

OaK

C# b# C+ b+ C, b,

F$FF

Z$FF

#Z$Z%

%#$Z%

%\$,%

.Y$#%.\$Z%Y-$#FZ+$FF

1+ J+ ^+ X6?9@T b69 A8 X6?9@Tb69 A8T4=@9H47

!F$Z V c"

!#$Z/

0 1+-d

/

!F$Z e M"

!#$./

0 1

M

Zd

\$,F#F$+

<6B4976894< P8=EJOT Delta PTWN5451 30 x

$ F$- 1!

@TT Z <8B47

c V

8=6?69 @d67 ?494=@A4< Df1+gJ+g^+g1-gJ-g^-g1.gJ.g^.

Zd

0

1

,$\- ) F$%F$,h

=4P4=7A8 1!

#\$Y%" '

e

2=@[69?& 2FFF-,\F,4<?47 ?494=@T A8T4= 7>=P@H4

2WC WXS #,Y#% #E 2WC#.Y-+)`^-

2WC JC WXS#,F+

+E 2WC WXS+Y.Z)BV

/TT <6B4976897 =4P4= A8 B8<>T4 69<4T654=f H89<6A689

13

FS820R08A6P2BHybridPACK™ Drive Module

V3.0, 2017-03-09Final Data Sheet

9 Label Codes

9.1 Module CodeCode Format Data Matrix

Encoding ASCII Text

Symbol Size 16x16

Standard IEC24720 and IEC16022

Code Content ContentModule Serial NumberModule Material NumberProduction Order NumberDatecode (Production Year)Datecode (Production Week)

Digit1 - 56 - 1112 - 1920 - 2122 - 23

Example (below)71549142846550549911530

Example

71549142846550549911530

9.2 Packing CodeCode Format Code128

Encoding Code Set A

Symbol Size 34 digits

Standard IEC8859-1

Code Content ContentBackend Construction NumberProduction Lot NumberSerial NumberDate CodeBox Quantity

IdentifierX1TS9DQ

Digit2 - 912 - 1921 - 2528 - 3133 - 34

Example (below)950566092X0003E0754389113915

Example

X950566091T2X0003E0S754389D1139Q15

14



Revision History

Major changes since previous revision

Revision History

Reference Date Description

V1.2 2016-01-14 Increased ICRM and minor revisions, based on FS660R08A6P2B revision 1.1

V2.0 2016-11-24 Preliminary datasheet 2.0

V3.0 2017-03-09 Final datasheet 3.0

15



Terms & Conditions of usage

Edition 2014-05-30

Published byInfineon Technologies AG81726 Munich, Germany© 2014 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to anyexamples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, InfineonTechnologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement ofintellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office(http://www.infineon.com)

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact thenearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affectthe safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or tosupport and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other personsmay be endangered.

Trademarks

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ ofDECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ ofCommission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATIONFOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of MentorGraphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ OpenwaveSystems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of SunMicrosystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ ofWIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last update 2011-11-11

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

Documents

Datasheet / FS820R08A6P2B