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IGBTHighspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiode
IKA15N65H5650VDuoPackIGBTandDiodeHighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
2
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1fastandsoftantiparalleldiodeFeaturesandBenefits:
HighspeedH5technologyoffering•Best-in-Classefficiencyinhardswitchingandresonanttopologies•PlugandplayreplacementofpreviousgenerationIGBTs•650Vbreakdownvoltage•LowQG•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•Solarconverters•Uninterruptiblepowersupplies•Weldingconverters•Midtohighrangeswitchingfrequencyconverters
G
C
E
G C E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKA15N65H5 650V 15A 1.65V 175°C K15EH5 PG-TO220-3 FP
3
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emitter voltage VCE 650 V
DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IC 14.08.5
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C - 45.0 A
Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IF 12.37.3
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A
Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE
±20±30 V
PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot
33.316.7 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value UnitCharacteristic
IGBT thermal resistance,junction - case Rth(j-c) 4.50 K/W
Diode thermal resistance,junction - case Rth(j-c) 5.60 K/W
Thermal resistancejunction - ambient Rth(j-a) 65 K/W
5
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0ATvj=25°CTvj=125°CTvj=175°C
---
1.651.851.95
2.10--
V
Diode forward voltage VF
VGE=0V,IF=9.0ATvj=25°CTvj=125°CTvj=175°C
---
1.451.401.40
1.80--
V
Gate-emitter threshold voltage VGE(th) IC=0.15mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C
--
--
40.04000.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=15.0A - 22.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 930 -
Output capacitance Coes - 24 -
Reverse transfer capacitance Cres - 4 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=15.0A,VGE=15V - 38.0 - nC
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 17 - ns
Rise time tr - 7 - ns
Turn-off delay time td(off) - 160 - ns
Fall time tf - 10 - ns
Turn-on energy Eon - 0.12 - mJ
Turn-off energy Eoff - 0.05 - mJ
Total switching energy Ets - 0.17 - mJ
Tvj=25°C,VCC=400V,IC=7.5A,VGE=0.0/15.0V,RG(on)=39.0Ω,RG(off)=39.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
6
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Turn-on delay time td(on) - 16 - ns
Rise time tr - 3 - ns
Turn-off delay time td(off) - 138 - ns
Fall time tf - 20 - ns
Turn-on energy Eon - 0.04 - mJ
Turn-off energy Eoff - 0.02 - mJ
Total switching energy Ets - 0.06 - mJ
Tvj=25°C,VCC=400V,IC=2.0A,VGE=0.0/15.0V,RG(on)=39.0Ω,RG(off)=39.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 48 - ns
Diode reverse recovery charge Qrr - 0.20 - µC
Diode peak reverse recovery current Irrm - 8.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -200 - A/µs
Tvj=25°C,VR=400V,IF=7.5A,diF/dt=1000A/µs
Diode reverse recovery time trr - 25 - ns
Diode reverse recovery charge Qrr - 0.09 - µC
Diode peak reverse recovery current Irrm - 6.7 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -500 - A/µs
Tvj=25°C,VR=400V,IF=2.0A,diF/dt=1000A/µs
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 16 - ns
Rise time tr - 8 - ns
Turn-off delay time td(off) - 180 - ns
Fall time tf - 16 - ns
Turn-on energy Eon - 0.18 - mJ
Turn-off energy Eoff - 0.08 - mJ
Total switching energy Ets - 0.26 - mJ
Tvj=150°C,VCC=400V,IC=7.5A,VGE=0.0/15.0V,RG(on)=39.0Ω,RG(off)=39.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
Turn-on delay time td(on) - 14 - ns
Rise time tr - 4 - ns
Turn-off delay time td(off) - 220 - ns
Fall time tf - 30 - ns
Turn-on energy Eon - 0.06 - mJ
Turn-off energy Eoff - 0.03 - mJ
Total switching energy Ets - 0.09 - mJ
Tvj=150°C,VCC=400V,IC=2.0A,VGE=0.0/15.0V,RG(on)=39.0Ω,RG(off)=39.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
7
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time trr - 74 - ns
Diode reverse recovery charge Qrr - 0.42 - µC
Diode peak reverse recovery current Irrm - 11.0 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -160 - A/µs
Tvj=150°C,VR=400V,IF=7.5A,diF/dt=1000A/µs
Diode reverse recovery time trr - 42 - ns
Diode reverse recovery charge Qrr - 0.21 - µC
Diode peak reverse recovery current Irrm - 10.5 - A
Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -310 - A/µs
Tvj=150°C,VR=400V,IF=2.0A,diF/dt=1000A/µs
8
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 1. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tvj≤175°C;VGE=15V.RecommendeduseatVGE≥7.5V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000.1
1
10
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 2. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,POWERDISSIPATION[kW]
25 50 75 100 125 150 1750
5
10
15
20
25
30
35
Figure 3. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLECTO
RCURRENT[A]
25 50 75 100 125 150 1750.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
Figure 4. Typicaloutputcharacteristic(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00
5
10
15
20
25
30
35
40
45
VGE=20V
18V
12V
10V
8V
7V
6V
5V
4V
9
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 5. Typicaloutputcharacteristic(Tvj=150°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00
5
10
15
20
25
30
35
40
45
VGE=20V
18V
12V
10V
8V
7V
6V
5V
4V
Figure 6. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.50
5
10
15
20
25
30
35
40
45Tj=25°CTj=150°C
Figure 7. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat ,COLLECTO
R-EMITTE
RSATU
RATION[V
]
0 25 50 75 100 125 150 1750.75
1.00
1.25
1.50
1.75
2.00
2.25IC=3,8AIC=7,5AIC=15A
Figure 8. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=39Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 30 35 40 451
10
100
1000td(off)
tftd(on)
tr
10
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 9. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=7,5A,DynamictestcircuitinFigure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65 75 851
10
100
1000td(off)
tftd(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=7,5A,rG=39Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 1751
10
100
1000td(off)
tftd(on)
tr
Figure 11. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.15mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GATE
-EMITTE
RTHRESHOLD
VOLTAGE[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5typ.min.max.
Figure 12. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,rG=39Ω,DynamictestcircuitinFigure E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENERGYLOSSES[m
J]
0 5 10 15 20 25 30 35 40 450.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6Eoff
Eon
Ets
11
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 13. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=7,5A,DynamictestcircuitinFigure E)
rG,GATERESISTOR[Ω]
E,S
WITCHINGENERGYLOSSES[m
J]
5 15 25 35 45 55 65 75 850.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=7,5A,rG=39Ω,DynamictestcircuitinFigure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENERGYLOSSES[m
J]
25 50 75 100 125 150 1750.000
0.025
0.050
0.075
0.100
0.125
0.150
0.175
0.200
0.225
0.250
0.275
0.300Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=7,5A,rG=39Ω,DynamictestcircuitinFigure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENERGYLOSSES[m
J]
200 250 300 350 400 450 5000.000
0.025
0.050
0.075
0.100
0.125
0.150
0.175
0.200
0.225
0.250
0.275
0.300Eoff
Eon
Ets
Figure 16. Typicalgatecharge(IC=15A)
QGE,GATECHARGE[nC]
VGE,G
ATE
-EMITTE
RVOLTAGE[V
]
0 5 10 15 20 25 30 35 400
2
4
6
8
10
12
14
16130V520V
12
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APACITANCE[pF]
0 5 10 15 20 25 301
10
100
1000
Ciss
Coss
Crss
Figure 18. IGBTtransientthermalresistance(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIENTTH
ERMALRESISTA
NCE[K
/kW]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1000.01
0.1
1D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.25715781.8E-4
20.57318331.2E-3
30.44609299.1E-3
40.52091720.1021129
51.8047661.367234
60.89788267.180227
Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j -c
) ,TR
ANSIENTTH
ERMALRESISTA
NCE[K
/kW]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1000.001
0.01
0.1
1 D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.95209412.1E-4
21.1719481.1E-3
30.52879448.9E-3
40.46475770.09325149
51.6719811.367755
60.81042467.182978
Figure 20. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,R
EVERSERECOVERYTIME[ns]
600 800 1000 1200 1400 1600 1800 200030
40
50
60
70
80
90Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A
13
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 21. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,R
EVERSERECOVERYCHARGE[µC]
600 800 1000 1200 1400 1600 1800 20000.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A
Figure 22. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,R
EVERSERECOVERYCURRENT[A]
600 800 1000 1200 1400 1600 1800 20005.0
7.5
10.0
12.5
15.0
17.5Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A
Figure 23. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofI
rr[A
/µs]
600 800 1000 1200 1400 1600 1800 2000-400
-350
-300
-250
-200
-150
-100
-50
0Tj=25°C, IF = 7.5ATj=150°C, IF = 7.5A
Figure 24. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.50
3
6
9
12
15
18
21
24
27Tj=25°CTj=150°C
14
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Figure 25. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWARDVOLTAGE[V
]
25 50 75 100 125 150 1750.8
1.0
1.2
1.4
1.6
1.8
2.0IF=4,5AIF=9AIF=18A
15
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
Package Drawing PG-TO220-3-FP
16
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t
4
2% IC
10% VGE
2% VCE
t2
t3
E
t
t
V I toff
= x x d
1
2
CE CE
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
Testing Conditions
17
IKA15N65H5Highspeedswitchingseriesfifthgeneration
Rev.2.1,2015-05-05
RevisionHistory
IKA15N65H5
Revision:2015-05-05,Rev.2.1Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2012-11-09 Preliminary datasheet
1.2 2013-12-17 New Marking Pattern
2.1 2015-05-05 Final data sheet
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PublishedbyInfineonTechnologiesAG81726Munich,Germany81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.
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WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.