Datasheet IPD95R2K0P7 - Farnell element141 IPD95R2K0P7 Final Data Sheet Rev. 2.1, 2018-06-04 tab 1 2 3 DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 1 2 1: Internal body diode 2: Integrated

1

IPD95R2K0P7

Rev.2.1,2018-06-04Final Data Sheet

tab

12

3

DPAK

Drain

Pin 2

Gate

Pin 1

Source

Pin 3

*1

*2

*1: Internal body diode

*2: Integrated ESD diode

MOSFET950VCoolMOSªP7SJPowerDeviceThelatest950VCoolMOS™P7seriessetsanewbenchmarkin950Vsuperjunctiontechnologiesandcombinesbest-in-classperformancewithstateoftheartease-of-use,resultingfromInfineon’sover18yearspioneeringsuperjunctiontechnologyinnovation.

Features•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss•Best-in-classDPAKRDS(on)•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V•IntegratedZenerDiodeESDprotection•Best-in-classCoolMOS™qualityandreliability•Fullyoptimizedportfolio

Benefits•Best-in-classperformance•Enablinghigherpowerdensitydesigns,BOMsavingsandlowerassemblycosts•Easytodriveandtoparallel•BetterproductionyieldbyreducingESDrelatedfailures•Lessproductionissuesandreducedfieldreturns•Easytoselectrightpartsforfinetuningofdesigns

PotentialapplicationsRecommendedforflybacktopologiesforLEDLighting,lowpowerChargersandAdapters,SmartMeter,AUXpowerandIndustrialpower.AlsosuitableforPFCstageinConsumerandSolarapplications.

ProductValidation:Fullyqualifiedacc.JEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj=25°C 950 V

RDS(on),max 2 Ω

Qg,typ 10 nC

ID 4 A

Eoss @ 500V 0.9 µJ

VGS(th),typ 3 V

ESD class (HBM) 2 -

Type/OrderingCode Package Marking RelatedLinksIPD95R2K0P7 PG-TO 252-3 95R2K0P7 see Appendix A

2

950VCoolMOSªP7SJPowerDeviceIPD95R2K0P7


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3



1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

42.4 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 10 A TC=25°C

Avalanche energy, single pulse EAS - - 6 mJ ID=0.4A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.08 mJ ID=0.4A; VDD=50V; see table 10

Application (Flyback) relevantavalanche current, single pulse3) IAS - 2.0 - A measured with standard leakage

inductance of transformer of 10µH

MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 37 W TC=25°CStorage temperature Tstg -55 - 150 °C -

Operating junction temperature Tj -55 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current IS - - 2.7 A TC=25°CDiode pulse current2) IS,pulse - - 10 A TC=25°C

Reverse diode dv/dt4) dv/dt - - 1 V/ns VDS=0...400V,ISD<=0.8A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 50 A/µs VDS=0...400V,ISD<=0.8A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj,max. Maximum Duty Cycle D = 0.52) Pulse width tp limited by Tj,max3) For further explanation please read AN - CoolMOSTM 700V P7 & 950V P74) Identical low side and high side switch with identical RG

4



2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case RthJC - - 3.4 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.

Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL1

5



3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 950 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.08mA

Zero gate voltage drain current IDSS --

-10

1- µA VDS=950V,VGS=0V,Tj=25°C

VDS=950V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS - - 1000 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

1.713.824

2- Ω VGS=10V,ID=1.7A,Tj=25°C

VGS=10V,ID=1.7A,Tj=150°C

Gate resistance RG - 1 - Ω f=250kHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss - 330 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 5 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated1) Co(er) - 8 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) - 81 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 6 - ns VDD=400V,VGS=13V,ID=1.7A,RG=23.1Ω;seetable9

Rise time tr - 13 - ns VDD=400V,VGS=13V,ID=1.7A,RG=23.1Ω;seetable9

Turn-off delay time td(off) - 41 - ns VDD=400V,VGS=13V,ID=1.7A,RG=23.1Ω;seetable9

Fall time tf - 18 - ns VDD=400V,VGS=13V,ID=1.7A,RG=23.1Ω;seetable9

Table6GatechargecharacteristicsValues


Gate to source charge Qgs - 2 - nC VDD=760V,ID=1.7A,VGS=0to10VGate to drain charge Qgd - 3 - nC VDD=760V,ID=1.7A,VGS=0to10VGate charge total Qg - 10 - nC VDD=760V,ID=1.7A,VGS=0to10VGate plateau voltage Vplateau - 4.4 - V VDD=760V,ID=1.7A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6



Table7ReversediodecharacteristicsValues


Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.7A,Tj=25°C

Reverse recovery time trr - 337 - ns VR=400V,IF=0.8A,diF/dt=50A/µs;see table 8

Reverse recovery charge Qrr - 2 - µC VR=400V,IF=0.8A,diF/dt=50A/µs;see table 8

Peak reverse recovery current Irrm - 9 - A VR=400V,IF=0.8A,diF/dt=50A/µs;see table 8

7



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

10

20

30

40

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

1 ms

100 µs

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-1

100

101

0.5

0.2

0.1

0.05

0.010.02

single pulse

ZthJC=f(tP);parameter:D=tp/T

8



Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

20 V10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

1

2

3

420 V

10 V8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 1 2 3 42.500

3.000

3.500

4.000

4.500

5.000

5.500

4 V 4.5 V

5.5 V

6 V

10 V

20 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

2.5

RDS(on)=f(Tj);ID=1.7A;VGS=10V

9



Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

2

4

6

8

25 °C

150 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 3 6 9 120

2

4

6

8

10

12

120 V 760 V

VGS=f(Qgate);ID=1.7Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

125 °C 25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

2

4

6

8

EAS=f(Tj);ID=0.4A;VDD=50V

10



Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150850

900

950

1000

1050

1100

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 600 700 800 900 10000

1

2

3

Eoss=f(VDS)

11



5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12



6PackageOutlines

2.5

REVISION

06

05-02-2016

ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

0

2.5

DOCUMENT NO.

Z8B00003328

MILLIMETERS

4.57 (BSC)

2.29 (BSC)

L4

D

N

H

E1

e1

e

E

D1

L3

1.18

0.51

0.89

5.02

9.40

6.35

4.32

5.97

3

b3

A

DIM

b2

c

b

c2

A1

4,95

MIN

2.16

0.64

0.46

0.65

0.40

0.00

0.046

0.020

0.035

0.198

0.250

0.185

0.235

0.370

1.78

1.02

5.21

5.84

6.22

6.73

1.27

10.48

0.180 (BSC)

0.090 (BSC)

3

0.070

0.205

0.040

0.230

0.265

0.050

0.245

0.413

0.195

0.085

0.025

0.018

0.026

0.016

0.000

5.50

MAX

2.41

0.15

1.15

0.61

0.89

0.98

INCHES

MIN

0.217

MAX

0.006

0.095

0.035

0.024

0.045

0.039

L

Figure1OutlinePG-TO252-3,dimensionsinmm/inches

13



7AppendixA

Table11RelatedLinks

• IFXCoolMOSP7Webpage:www.infineon.com

• IFXCoolMOSP7applicationnote:www.infineon.com

• IFXCoolMOSP7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

http://www.infineon.com/tools

http://www.infineon.com/P7



14



RevisionHistoryIPD95R2K0P7

Revision:2018-06-04,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2018-05-30 Release of final version

2.1 2018-06-04 Final

TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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PublishedbyInfineonTechnologiesAG81726München,Germany©2018InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).

Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Documents

Datasheet IPD95R2K0P7 - Farnell element141 IPD95R2K0P7 Final Data Sheet Rev. 2.1, 2018-06-04 tab 1 2 3 DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 *1 *2 *1: Internal body diode *2: Integrated

Datasheet IPD95R2K0P7 - Farnell element141 IPD95R2K0P7 Final Data Sheet Rev. 2.1, 2018-06-04 tab 1 2 3 DPAK Drain Pin 2 Gate Pin 1 Source Pin 3 1 2 1: Internal body diode 2: Integrated