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OptiFIB Taipan System Circuit Edit System for 10 nm and Beyond Circuit edit technology provides rapid prototyping of small design corrections at various points in the IC manufacturing process: after first silicon debug; for performance enhancements during yield ramp; to create a small number of function chips for beta developers; and to resolve reliability issues. Circuit edit engineers mill the chip to the site of the suspected defect and then remove or deposit conductors or insulators in precise geometries—allowing IC manufacturers to validate design changes without re-spinning masks and processing additional wafers. To meet the stringent circuit edit requirements of the 10 nm node, Thermo Scientific OptiFIB Taipan System was engineered to meet the challenges of advanced designs and processes. A new coaxial ion-photon column, electronics, chamber and stage enable a highly controlled beam profile and current, accurate navigation and ion beam placement, and reliable end-pointing. An updated chemical delivery system provides industry-leading etch and deposition chemistries. DATASHEET Key benefits Imaging and milling resolution to meet 10 nm node specifications Excellent navigation and ion beam placement accuracy to ensure high edit success rate at the 10 nm node Superb etch selectivity and deposition control for conductors and insulators Backside circuit modification on a finFET device performed by OptiFib Taipan

DATASHEET OptiFIB Taipan System€¦ · OptiFIB Taipan System Circuit Edit System for 10 nm and Beyond Circuit edit technology provides rapid prototyping of small design corrections

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Page 1: DATASHEET OptiFIB Taipan System€¦ · OptiFIB Taipan System Circuit Edit System for 10 nm and Beyond Circuit edit technology provides rapid prototyping of small design corrections

OptiFIB Taipan System Circuit Edit System for 10 nm and Beyond

Circuit edit technology provides rapid prototyping of small design corrections at various points in the IC manufacturing process: after first silicon debug; for performance enhancements during yield ramp; to create a small number of function chips for beta developers; and to resolve reliability issues. Circuit edit engineers mill the chip to the site of the suspected defect and then remove or deposit conductors or insulators in precise geometries—allowing IC manufacturers to validate design changes without re-spinning masks and processing additional wafers.

To meet the stringent circuit edit requirements of the 10 nm node, Thermo Scientific™ OptiFIB™ Taipan System was engineered to meet the challenges of advanced designs and processes. A new coaxial ion-photon column, electronics, chamber and stage enable a highly controlled beam profile and current, accurate navigation and ion beam placement, and reliable end-pointing. An updated chemical delivery system provides industry-leading etch and deposition chemistries.

DATASHEET

Key benefits

Imaging and milling resolution to meet 10 nm node specifications

Excellent navigation and ion beam placement accuracy to ensure high edit success rate at the 10 nm node

Superb etch selectivity and deposition control for conductors and insulators

Backside circuit modification on a finFET device performed by OptiFib Taipan

Page 2: DATASHEET OptiFIB Taipan System€¦ · OptiFIB Taipan System Circuit Edit System for 10 nm and Beyond Circuit edit technology provides rapid prototyping of small design corrections

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For current certifications, visit FEI.com/certifications. © 2017 Thermo Fisher Scientific Inc. All rights reserved. All trademarks are the property of Thermo Fisher Scientific and its subsidiaries unless otherwise specified. DS0213-09-2017

Specifications

FIB image resolution <3.0 nm

Acceleration voltage 0.5 kV – 30 kV

Photon-ion columnCoaxial Taipan column for backside and frontside circuit edit

Beam current 250 fA – 20 nA

Min FOV 500 nm

Stage travel 75 mm

Beam stability/drift control < 4 nm / min

Metal deposition resistivity ≤ 200 mΩ∙cm

Dielectric deposition resistivity ≥1E15 mΩ∙cm

High image resolutionOptiFIB Taipan delivers focused ion beam (FIB) image resolution of better than 3 nm, demonstrated by imaging tin spheres—critical for navigation to the correct side of the edit and for monitoring and end-pointing the circuit edit work.

Real-time in situ optical imaging This through-silicon image was obtained on a highly doped power device using OptiFIB’s patented coaxial technology, which allows the user to acquire simultaneous optical and FIB images.

Fast and accurate navigationBy overlaying the CAD image with OptiFIB Taipan’s FIB image, GDSDirect enables faster navigation and higher beam placement accuracy.