TO-220FP

12

3

AM15572v1_no_tab

D(2)

G(1)

S(3)

FeaturesOrder code VDS RDS(on) max. ID

STF16N90K5 900 V 330 mΩ 15 A

• Industry’s lowest RDS(on) x area• Industry’s best FoM (figure of merit)• Ultra-low gate charge• 100% avalanche tested• Zener-protected

Applications• Switching applications

DescriptionThis very high voltage N-channel Power MOSFET is designed using MDmesh K5technology based on an innovative proprietary vertical structure. The result is adramatic reduction in on-resistance and ultra-low gate charge for applicationsrequiring superior power density and high efficiency.

Product status link

STF16N90K5

Product summary

Order code STF16N90K5

Marking 16N90K5

Package TO-220FP

Packing Tube

N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package

STF16N90K5

Datasheet

DS13052 - Rev 1 - August 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ±30 V

ID Drain current (continuous) at TC = 25 °C 15 A

ID Drain current (continuous) at TC = 100 °C 9 A

IDM (1) Drain current (pulsed) 60 A

PTOT Total power dissipation at TC = 25 °C 30 W

VISOInsulation withstand voltage (RMS) from all three leads to external heat sink

(t = 1 s; TC = 25 °C)2.5 kV

dv/dt (2) Peak diode recovery voltage slope 4.5V/ns

dv/dt (3) MOSFET dv/dt ruggedness 50

TJ Operating junction temperature range-55 to 150 °C

Tstg Storage temperature range

1. Pulse width limited by safe operating area.2. ISD ≤ 15 A, di/dt ≤ 100 A/μs; VDS (peak) ≤ V(BR)DSS, VDD= 450 V.

3. VDS ≤ 720 V.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 4.1 °C/W

Rthj-amb Thermal resistance junction-amb 62.5 °C/W

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max) 5 A

EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 380 mJ

STF16N90K5Electrical ratings

DS13052 - Rev 1 page 2/12

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off state

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdownvoltage VGS = 0 V, ID = 1 mA 900 V

IDSSZero gate voltage draincurrent

VGS = 0 V, VDS = 900 V 1 µA

VGS = 0 V, VDS = 900 V

TC = 125 °C (1)50 µA

IGSSGate body leakagecurrent VDS = 0 V, VGS = ±20 V ±10 µA

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V

RDS(on)Static drain-sourceon-resistance VGS = 10 V, ID = 7.5 A 280 330 mΩ

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 100 V, f = 1 MHz,VGS = 0 V

- 1027 - pF

Coss Output capacitance - 106 - pF

CrssReverse transfercapacitance - 1.6 - pF

Co(er) (1)Equivalent capacitance

energy related VGS = 0 V,

VDS = 0 to 720 V

- 51 - pF

Co(tr) (2)Equivalent capacitance

time related141 - pF

Rg Intrinsic gate resistance f = 1 MHz, ID = 0 A 1 4.9 9 Ω

Qg Total gate charge VDD = 720 V, ID = 15 A

VGS = 0 to 10 V

(see Figure 14. Test circuit forgate charge behavior )

- 29.7 - nC

Qgs Gate-source charge - 7.3 - nC

Qgd Gate-drain charge - 17.7 - nC

1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

STF16N90K5Electrical characteristics

DS13052 - Rev 1 page 3/12

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD= 450 V, ID = 7.5 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 13. Test circuit forresistive load switching times andFigure 18. Switching timewaveform)

- 28.8 - ns

tr Rise time - 36 - ns

td(off) Turn-off delay time - 46 - ns

tf Fall time - 9.8 - ns

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 15 A

ISDM (1) Source-drain current(pulsed) - 60 A

VSD (2) Forward on voltage ISD = 15 A, VGS = 0 V - 1.5 V

trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs,

VDD = 60 V(see Figure 15. Test circuit forinductive load switching anddiode recovery times)

- 458 ns

Qrr Reverse recovery charge - 8.13 µC

IRRM Reverse recovery current - 35.5 A

trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs,

VDD = 60 V,

Tj = 150 °C(see Figure 15. Test circuit forinductive load switching anddiode recovery times)

- 546 ns

Qrr Reverse recovery charge - 9.2 µC

IRRM Reverse recovery current - 33.7 A

1. Pulse width limited by safe operating area2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)GSOGate-source breakdownvoltage IGS= ±1 mA, ID= 0 A 30 - - V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need foradditional external componentry.

STF16N90K5Electrical characteristics

DS13052 - Rev 1 page 4/12

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

GADG300720190845SOA

10 1

10 0

10 -1

10 -2

10 -1 10 0 10 1 10 2 10 3

ID (A)

VDS (V)

tp = 100µs

tp = 10µs

tp = 1µs

tp = 1ms

Opera

tion i

n this

area

is lim

ited b

y RDS(

on)

IDM

TC = 25 °CTJ ≤ 150°CSingle pulse

V(BR)DSS

RDS(on) max.

tp = 10ms

Figure 2. Maximum transient thermal impedance

GADG300720190845ZTH

10 0

10 -1

10 -2

10 -3

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s)

ton

T

duty = ton / TRthJ-C = 4.1 °C/W

Single pulse

duty=0.5

0.20.1

0.05

0.30.4

ZthJ-C(°C/W)

Figure 3. Typical output characteristicsGIPG231020180825OCH

35

30

25

20

15

10

5

00 4 8 12 16

ID (A)

VDS (V)

VGS =7V

VGS =10V

VGS =8V

VGS =9V

VGS =6V

Figure 4. Typical transfer characteristics

GIPG231020180826TCH

35

30

25

20

15

10

5

04 5 6 7 8 9

ID (A)

VGS (V)

VDS = 15 V

Figure 5. Normalized breakdown voltage vs temperature

GIPG221020181225BDV

1.10

1.05

1.00

0.95

0.90

0.85-75 -25 25 75 125

V(BR)DSS (norm.)

ID = 1 mA

TJ (°C)

Figure 6. Typical drain-source on-resistanceGADG310720191006RON

310

300

290

280

270

260

2500 2 4 6 8 10 12 14

RDS(on) (mΩ)

ID (A)

VGS = 10 V

STF16N90K5Electrical characteristics (curves)

DS13052 - Rev 1 page 5/12

Figure 7. Typical gate charge characteristics

GADG300720191127QVG

700

600

500

400

300

200

100

0

14

12

10

8

6

4

2

00 6 12 18 24 30 36

VDS (V)

VGS (V)

Qg (nC)

VDD = 720 V, ID = 15 A

Qgs Qgd

Qg

Figure 8. Typical capacitances vs voltage

GIPG231020180825CVR

10 3

10 2

10 1

10 0

10 -1 10 0 10 1 10 2

C (pF)

VDS (V)

CISS

COSS

CRSS

f = 1 MHz

Figure 9. Normalized gate threshold voltage vstemperature

GIPG221020181223VTH

1.1

1.0

0.9

0.8

0.7

0.6-75 -25 25 75 125

VGS(th) (norm.)

TJ (°C)

ID=250 μA

Figure 10. Normalized on-resistance vs temperature

GIPG221020181224RON

2.5

2.0

1.5

1.0

0.5

0.0-75 -25 25 75 125

RDS(on) (norm.)

VGS = 10 V

TJ (°C)

Figure 11. Maximum avalanche energy vs temperature

GIPG231020180827EAS

360

300

240

180

120

60

0-75 -25 25 75 125

EAS (mJ)

TJ (°C)

ID = 5 AVDD = 50 V

Single pulse

Figure 12. Typical source-drain diode forwardcharacteristics

GIPG231020180825SDF

1.0

0.9

0.8

0.7

0.6

0.5

0.42 4 6 8 10 12 14

VSD (V)

ISD (A)

TJ = -50 °C

TJ = 25 °C

TJ = 150 °C

STF16N90K5Electrical characteristics (curves)

DS13052 - Rev 1 page 6/12

3 Test circuits

Figure 13. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 14. Test circuit for gate charge behavior

AM01469v10

47 kΩ

2.7 kΩ

1 kΩ

IG= CONST100 Ω D.U.T.

+pulse width

VGS

2200μF

VG

VDD

RL

Figure 15. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 16. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 17. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 18. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

STF16N90K5Test circuits

DS13052 - Rev 1 page 7/12

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220FP package information

Figure 19. TO-220FP package outline

7012510_Rev_13_B

STF16N90K5Package information

DS13052 - Rev 1 page 8/12

Table 9. TO-220FP package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

B 2.50 2.70

D 2.50 2.75

E 0.45 0.70

F 0.75 1.00

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.20

G1 2.40 2.70

H 10.00 10.40

L2 16.00

L3 28.60 30.60

L4 9.80 10.60

L5 2.90 3.60

L6 15.90 16.40

L7 9.00 9.30

Dia 3.00 3.20

STF16N90K5TO-220FP package information

DS13052 - Rev 1 page 9/12

Revision history

Table 10. Document revision history

Date Revision Changes

01-Aug-2019 1 First release.

STF16N90K5

DS13052 - Rev 1 page 10/12

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

STF16N90K5Contents

DS13052 - Rev 1 page 11/12

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DS13052 - Rev 1 page 12/12

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