Datasheet - STK224N4F7AG - Automotive-grade N-channel 40 V

LFPAK 5x6

TAB

23

4

1

G4S123DTAB_LFPAK

D(TAB)

G(4)

S(1, 2, 3)

FeaturesOrder code V DS RDS(on) max ID

STK224N4F7AG 40 V 1.5 mΩ 100 A

• AEC-Q101 qualified • Among the lowest RDS(on) on the market• Excellent FoM (figure of merit)• Low Crss/Ciss ratio for EMI immunity• High avalanche ruggedness

Applications• Switching applications

DescriptionThis N-channel Power MOSFET utilizes STripFET™ F7 technology with anenhanced trench gate structure that results in very low on-state resistance, while alsoreducing internal capacitance and gate charge for faster and more efficient switching.

Product status

STK224N4F7AG

Product summary

Order code STK224N4F7AG

Marking 224N4F7

Package LFPAK 5x6

Packing Tape and reel

Automotive-grade N-channel 40 V, 1.2 mΩ typ., 100 A STripFET™ F7 Power MOSFET in a LFPAK 5x6 package

STK224N4F7AG

Datasheet

DS12550 - Rev 2 - January 2019For further information contact your local STMicroelectronics sales office.

www.st.com

http://www.st.com/en/product/stk224n4f7ag

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 40 V

VGS Gate-source voltage ±20 V

ID (1) Drain current (continuous) at TC = 25 °C 100 A

ID (1) Drain current (continuous) at TC = 100 °C 100 A

IDM (2) Drain current (pulsed) 400 A

PTOT Total dissipation at TC = 25 °C 150 W

IAVAvalanche current, repetitive or not repetitive (pulse width limited by maximum junctiontemperature) 56 A

EASSingle pulse avalanche energy(starting TJ = 25 °C, ID = IAV, VDD = 25 V) 470 mJ

Tj Operating junction temperature range-55 to 175 °C

Tstg Storage temperature range

1. Drain current is limited by package, the current capability of the silicon is 224 A at 25 °C.2. Pulse width limited by safe operating area

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-pcb (1) Thermal resistance junction-pcb. 31.3 °C/W

Rthj-case Thermal resistance junction-case. 1.0 °C/W

1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.

STK224N4F7AGElectrical ratings

DS12550 - Rev 2 page 2/13

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source breakdownvoltage VGS = 0 V, ID= 1 mA 40 V

IDSSZero gate voltagedraincurrent VGS = 0 V, VDS= 40 V 1 µA

IGSS Gate-body leakage current VGS = 20 V, VDS = 0 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 4 V

RDS(on)Static drain-source on-resistance VGS = 10 V, ID = 50 A 1.2 1.5 mΩ

Table 4. Dynamic


Ciss Input capacitanceVDS = 25 V, f = 1 MHz,

VGS= 0 V

- 4060 - pF

Coss Output capacitance - 1100 - pF

Crss Reverse transfer capacitance - 300 - pF

Qg Total gate chargeVDD = 20 V, ID = 100 A,VGS = 0 to 10 V(see Figure 13. Testcircuit for gate charge behavior)

- 50 - nC

Qgs Gate-source charge - 23 - nC

Qgd Gate-drain charge - 9.8 - nC

Table 5. Switching times


td(on) Turn-on delay time VDD = 20 V, ID = 50 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 12. Test circuit forresistive load switching timesandFigure 17. Switching time waveform)

- 25 - ns

tr Rise time - 20 - ns

td(off) Turn-off delay time - 48 - ns

tf Fall time - 31 - ns

Table 6. Source-drain diode


VSD (1) Forward on voltage ISD = 100 A, VGS = 0 V - 1.1 V

trr Reverse recovery time ID = 100 A, di/dt = 100 A/µsVDD = 20 V (see Figure 14. Testcircuit for inductive load switching anddiode recovery times)

- 41 ns

Qrr Reverse recovery charge - 32 nC

IRRM Reverse recovery current - 1.6 A

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STK224N4F7AGElectrical characteristics

DS12550 - Rev 2 page 3/13

2.1 Electrical characteristics curves

Figure 1. Safe operating area

ADG191220181216SOA

10 2

10 1

10 0

10 -1

10 -1 10 0 10 1

ID (A)

VDS (V)

Operation in this area is

limited by m

ax. RDS(on)

Tj = 175 °C Tc = 25 °C single pulse

tp = 10µs

tp = 100µs

tp = 1ms

tp = 10ms

Figure 2. Thermal impedance

ADG191220181217ZTH

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

0.2

0.1

0.05

0.020.01

Single pulse

Figure 3. Output characterisics

ADG191220181217OCH

125

100

75

50

25

00 1 2 3 4 5

ID (A)

VDS (V)

VGS = 6 V

VGS = 5 V

VGS = 9, 10V

VGS = 7, 8 V

Figure 4. Transfer characteristics

ADG191220181218TCH

60

50

40

30

20

10

00 2 4 6 8

ID (A)

VGS (V)

VDS = 5 V

Figure 5. Static drain-source on resistance

ADG191220181218RID

1.10

10 20 40 60 80

RDS(on) [mΩ]

ID [A]

1.30

VGS = 10 V

Figure 6. Gate charge vs gate-source voltage

ADG191220181219QVG

12

10

8

6

4

2

00 10 20 30 40 50

VGS (V)

Qg (nC)

VDS = 20 V ID = 100 A

STK224N4F7AGElectrical characteristics curves

DS12550 - Rev 2 page 4/13

Figure 7. Capacitance variations

ADG191220181219CVR

10 4

10 3

10 2

10 1 0 10 20 30 40

C (pF)

VDS (V)

CISS

COSS

CRSS

Figure 8. Normalized gate threshold voltage vstemperature

ADG191220181220VTH

1.00

0.80

0.60

0.40

0.20-75 -25 25 75 125 175

VGS(th) (norm.)

Tj (°C)

ID = 250 µA

1.20

Figure 9. Normalized on resistance vs temperature

ADG191220181220RON

1.8

1.6

1.4

1.2

1

0.8

0.6-75 -25 25 75 125 175

RDS(on) (norm.)

Tj (°C)

VGS = 10 V ID = 50 A

Figure 10. Source-drain diode forward characteristic

ADG191220181221SDF

1.0

0.9

0.8

0.7

0.6

0.5

0.410 30 50 70 90

VSD (V)

ISD (A)

Tj = 25°C

Tj = 175°C

Tj = -55 °C

Figure 11. Normalized V(BR)DSS vs temperature

ADG191220181222BDV

1.06

1.04

1.02

1.00

0.98

0.96

0.94-75 -25 25 75 125 175

V(BR)DSS (norm.)

Tj (°C)

ID = 1 mA

STK224N4F7AGElectrical characteristics curves

DS12550 - Rev 2 page 5/13

3 Test circuits

Figure 12. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 13. Test circuit for gate charge behavior

AM01469v1

47 kΩ1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST100 Ω

100 nF

D.U.T.

+pulse width

VGS

2200μF

VG

VDD

Figure 14. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 15. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 16. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 17. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

STK224N4F7AGTest circuits

DS12550 - Rev 2 page 6/13

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

STK224N4F7AGPackage information

DS12550 - Rev 2 page 7/13

https://www.st.com/ecopack

http://www.st.com

4.1 LFPAK 5x6 package information

Figure 18. LFPAK 5x6 package outline

00299525_A

STK224N4F7AGLFPAK 5x6 package information

DS12550 - Rev 2 page 8/13

Table 7. LFPAK 5x6 package mechanical data

Dim.mm

Min. Typ. Max.

A 1.01 1.20

A1 0.00 0.15

A2 0.95 1.10

A3 0.25

A4 0.50 0.55 0.65

b 0.35 0.50

b2 3.62 4.41

b3 2.0 2.20

b4 0.70 0.90

b5 0.7

c 0.19 0.20(1) 0.25

c2 0.24 0.30

D 3.80 4.10

D1 3.80 4.00 4.20

E 4.8 5.0

E1 3.1 3.3

e 1.27

H 5.8 6.2

L 0.40 0.85

L1 0.80 1.30

L2 0.80 1.3

w 0.25

y 0.10

ϴ 0° 8°

1. Dimension without plating


DS12550 - Rev 2 page 9/13

Figure 19. LFPAK 5x6 recommended footprint

00299525_FP_A


DS12550 - Rev 2 page 10/13

Revision history

Table 8. Document revision history

Date Revision Changes

09-Apr-2018 1 First release.

14-Jan-2019 2

Updated title in cover page, Section 1 Electrical ratings and Section 2 Electrical characteristics.

Added Section 2.1 Electrical characteristics curves

Minor text changes.

STK224N4F7AG

DS12550 - Rev 2 page 11/13

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4.1 LFPAK 5x6 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

STK224N4F7AGContents

DS12550 - Rev 2 page 12/13

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STK224N4F7AG

DS12550 - Rev 2 page 13/13

Documents

Datasheet - STK224N4F7AG - Automotive-grade N-channel 40 V