Detector DESY for the European XFEL. Heinz Graafsma; Head of FS-DS; DESY-Hamburg AIDA-Workshop; Hamburg; March 2012

Detector Developments @ DESY for the European XFEL.

Heinz Graafsma; Head of FS-DS; DESY-HamburgAIDA-Workshop; Hamburg; March 2012

H. Graafsma | AIDA-Workshop; March 2012| Page 2

Challenge: Different Science

• Completely new science

• Fast science 100 fsec

• “Single shot” science

x109


E-XFEL Challenge: Time structure = difference with “others”

600 s99.4 ms

100 ms 100 ms

220 ns

FELprocess

X-ray photons<100 fs

Electron bunch trains; up to 2700 bunches in 600 sec, repeated 10 times per second.Producing 100 fsec X-ray pulses (up to 27 000 bunches per second).

27 000 bunches/sBut with

4.5 MHz rep rate


Single shot imaging…

K. J. Gaffney and H. N. Chapman, Science 8 June 2007


XFEL Detector requirements

4.5 MHz


The AGIPD Project


The Adaptive Gain Integrating Pixel DetectorThe AGIPD consortium:PSI/SLS -Villingen: chip design; interconnect and module assembly

Universität Bonn: chip design

Universität Hamburg: radiation damage tests, “charge explosion” studies; and sensor design

DESY: chip design, interface and control electronics, mechanics, cooling; overall coordination

Some Facts6 years development

~ 20 people

Some MilestonesFirst 16x16 pixels prototype End 2010

Definition of final design Summer 2011

Production, assembly and test >2013


The Adaptive Gain Integrating Pixel Detector

C1

Leakage comp.

C2

C3

Discr.

Cont

rol l

ogic

TrimDAC

Vthr VADCmax

Anal

ogue

en

codi

ngNormal Charge sensitive amplifier

High dynamic range:

Dynamically gain switching systemExtremely fast readout (200ns):

Analogue pipeline storage

0,0

0,2

0,4

0,6

0,8

1,0

1,2

1,4

1,6

1,8

0 5000 10000 15000Number of 12.4 KeV - Photons

Out

put V

olta

ge [V

]

Cf=100fF Cf=1500fF Cf=4800fF



C1

Leakage comp.

C2

C3

Discr.

Cont

rol l

ogic

TrimDAC

Vthr VADCmax

Anal

ogue

en

codi

ng

Readout amp.

3 levels

Filter/write amp.

Analogue pipeline

Filter/write amp. C1 Cn

High dynamic range:

Dynamically gain switching systemExtremely fast readout (200ns):

Analogue pipeline storage


AGIPD ASIC

Sensor ASIC per pixel

ASIC periphery

Chip output driver

Mux

HV

+-

THR

DACSWCTRL

Analog Mem

Analog Mem

CDS

RO Amp

Calibration circuitry

Adaptive gain amplifier

352 analog memory cells

……R

O b

us (p

er c

olum

n)

Pixel matrix


Imaging with AGIPD 0.2 prototype



Connector to interfaceHDI Base plate

sensorchip wire bondbump bond

~ 2mm

~220 mm

1k x 1k (2k x 2k)

64 x 64 pixels

Basic parametersBasic parameters•1 Megapixel detector (1k 1 Megapixel detector (1k 1k) 1k)•200200m m 200 200m pixelsm pixels•Flat detectorFlat detector •Sensor: Sensor: Silicon 128 x 512 Silicon 128 x 512 pixelpixel tiles tiles•Single shot 2D-imaging Single shot 2D-imaging •4.5 MHz frame rate4.5 MHz frame rate•2 2 10 1044 photons dynamic range photons dynamic range•Adaptive gain switching Adaptive gain switching •Single photon sensitivity at 12keVSingle photon sensitivity at 12keV•Noise Noise 300e300e•Storage depth Storage depth 350 images350 images•Analogue readout between bunch-trainsAnalogue readout between bunch-trains


Germanium pixel detector

> Germanium pros and cons: High absorption efficiency

Large, high-quality wafers available

But requires cooling, delicate

> Sensor production at Canberra Modification of strip detector technology

> Bump bonding at Fraunhofer IZM Indium bump process required

> Readout and mechanics at DESY Expected ≥ -70°C operation

http://www.canberra.com/


The DSSC Project


DSSC - DEPMOS Sensor with Signal Compression

> MPI-HLL, Munich

> Universität Heidelberg

> Universität Siegen

> Politecnico di Milano

> Università di Bergamo

> DESY, Hamburg

>Hexagonal pixels 200m pitch

• combines DEPFET

• with small area drift detector (scaleable)

> DEPFET per pixel

> Very low noise (good for soft X-rays)

> non linear gain (good for dynamic range)

> per pixel ADC

> digital storage pipeline


Output voltage as function of charge

injected charge

DEPMOS Sensor with Signal Compression DEPFET: Electrons are collected in a storage well

⇒Influence current from source to drain

source draingate

Fully depleted silicone-

Storage well

injected charge

DSSC




The PERCIVAL Project


PERCIVAL (Pixelated Energy Resolving CMOS Imager, Versatile and Large) X-X-ray Imaging MAPS for (X)FELs and Synchrotrons

> Ongoing development project between DESY and RAL / STFC

> Aim: to develop X-ray imager for FLASH, soft X-ray beams at PETRA III, and for the use of CFEL scientists at other facilities

> Sensor developed at RAL, Readout developed at DESY (+ ELETTRA) Only digital information coming off the chip

Readout development build upon / re-use XFEL and AGIPD developments already done on-site

Project timeline First small test sensors in hand ~ mid-2012

Full system by ~ end 2013


PERCIVAL project

photodiodes

embedded circuitry

handling wafer

backthinned (~12um) epi Si

board

e-

• Primary energy range 250 eV – 1 keV (will work from <200 eV to few keV)• 12 m Si sensitive volume with 25 m pixels 4k × 4k pixel sensor• 4 sensors in cloverleaf arrangement can make up 64 Mpixel (20cm x 20cm)• back-illuminated, back-thinned for uniform QE > 90%• 120 Hz frame rate and lower • 2-side buttable (space between active pixel edges on the order of 1mm)• electronic noise < 15e-, “full well” ~ 20 Me-• Multi-gain approach to access full dynamic range,

all gains active all the time

Aspired performance parameters:


Board : Readout & Control


Summary

>Free-Electron-Lasers are driving detector technology developments

>Solid-state (silicon+germanium) detectors

>3 projects ongoing at DESY for FELS: Adaptive Gain Integrating Pixel Detector (AGIPD)

DEPMOS Sensor with Signal Compression (DSSC)

Pixelated Energy Resolving CMOS Imager, Versatile and Large (PERCIVAL)

>Advanced technologies like 3D-ASIC integration will be needed in order to fully utilize the FEL capabilities.

Documents

Detector DESY for the European XFEL. Heinz Graafsma; Head of FS-DS; DESY-Hamburg AIDA-Workshop; Hamburg; March 2012