November 2003

B.Gaucher IBMSlide 1

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)

Submission Title: [60 GHz circuit design in silicon to enable markets]Date Submitted: [11 November, 2003]Source: [Brian Gaucher] Company [IBM TJ Watson Research]Address [1101 Kitchawan Rd. Yorktown Heights, NY 10598]Voice:[914-945-2596], FAX: [914-945-4134], E-Mail:[bgaucher@us.ibm.com]

Re:

Abstract: [Silicon technology has matured to a point where fully integrated radio front ends at millimeter wave (60GHz) frequencies can be designed in silicon. Example 60 GHz silicon circuits are shown, as well as a conceptual fully integrated transceiver in a single low cost package, including antennas. This enablement in silicon approach can reduce the cost volume barrier to help enable markets quickly.]

Purpose: [Information to be used to help demonstrate the validity of economical, very small, low power WPAN solutions.]

Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein.Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.

November 2003

B.Gaucher IBMSlide 2

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

60 GHz circuit design in silicon to enable markets

November 2003

B.Gaucher IBMSlide 3

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Agenda• Introduction

• SiGe Technology: Roadmap, Characteristics, & Performance

• Extending SiGe into the mmWave Application Space

• Future direction for mmWave solutions

• Conclusion

November 2003

B.Gaucher IBMSlide 4

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Trends• Unlicensed 60GHz band available

– 5 GHz of bandwidth ! – In principle, allows data rates of 100s of megabits to gigabits

per second • Current implementations of 60GHz front ends

– based on AlGaAs/InGaAs heterojunction technologies– low levels of integration and high costs

• Next Generation IBM SiGe BiCMOS could enable low cost, monolithic RF front-end transceiver at 60 GHz

– IBM's SiGe8HP (>200 GHz ft/fmax)• If successful, this would make an entire new unlicensed

frequency band commercially viable – Personal Area network applications (PAN)– Point-to-Point applications– Radar applications

• Significant implications for Silicon solutions– Lower power, lower cost, higher integration- – Overcome the “cost/volume” hurdle

November 2003

B.Gaucher IBMSlide 5

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Evolution of SiGe HBTs• Significant improvement in Ft/Fmax with each generation

Technology

6HP6HP

47/60 GHz/3.3V

7HP

120/100 GHz/1.8V120/125GHz

8HP

200/180GHz/1.7V200/250GHz

Next GenTarget 300GHz/TBD

5HP

50/50 GHz/3.3V

Tec

hnol

ogy

ft/f

max

5 GHz WLAN

40 Gbps Sonet24 GHz Vehicular radar

120 GHz DME77GHz radar60 GHz mmwaveWPAN

November 2003

B.Gaucher IBMSlide 6

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Increasing speed of silicon technologies…. • As silicon speeds increase, applications previously the

domain of III-V compound semiconductors are captured

1 & 10 Gbps hardware shipping1st publications targeting 40 GbpsLarge scale integration

10 & 40 Gbps hardware shipping1st designs targeting 80 to100 GbpsMedium scale integration

Focus:on large V swingHigh powerSmall scale integration

CMOSCMOS

SiGe/Si SiGe/Si BipolarBipolar

III-VIII-V

November 2003

B.Gaucher IBMSlide 7

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Silicon proof point circuits and architectures have been demonstrated in the mmWave frequency range

LNA for 60 & 77GHz

VCO for 60 & 77GHz

Amplifier for 60 & 77GHz

Direct conversion downconverter for 60 GHz

November 2003

B.Gaucher IBMSlide 8

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

World’s first 60GHz silicon direct down conversion mixer

• Most complex Si-based radio circuits ever reported at 60 GHz.

• First Gilbert-cell mixers at 60 GHz.

• Highest reported integration level for any technology at 60 GHz.– 80 transistors

– 43 transmission lines or inductors

• First-pass working hardware using a Cadence design kit not optimized for millimeter-wave radio work

• Performance comparable or exceeding GaAs – NF (< 15 dB),

– conversion gain (> 16 dB),

– power (150 mW “core”)

1.9mm x 1.65mm

LO Pilot Input19.67 - 21.33 GHz

FrequencyTripler

Buffer

BufferTerminationResistor

Differential Branch-Line DirectionalCoupler

LNA2(Active Balun)

Buffer

Buffer

GilbertMixers

LNA1(Different Chip)

60-GHz Direct-Conversion Quadrature Downconverter

Antenna

November 2003

B.Gaucher IBMSlide 9

doc.: IEEE 802.15-15-03-0465-00-003a

Submission

Concept for a packaged 60GHz transceiver• Fully

integrated including antenna

• Low cost package

• Low frequency I/O

SiGe-Chip

Alum

ina

I/Q

I/Q

PLL

QFN-Package

Standard plastic

package Mold

Package Pin

C4-Ball's

Tx/Rx Flip-Antenna

Wirebond Pad

Wirebond

Filter Structure

90PA

MIX

MIX

Q-signal

I-signal

VCO

90

MIX

MIX

LNA

I-signal

Q-signal

VCO

Signal Propagation