Dr. Bharathwaj Muthuswamy

Primary Info:

Visiting Assistant Professor

STEM 242

(609) 771-2482

muthuswb@tcnj.edu

Education:

Ph.D. – Electrical Engineering, University of California, Berkeley

M.S. – Electrical Engineering, University of California, Berkeley

B.S. – Electrical Engineering, University of California, Berkeley

mailto:muthuswb@tcnj.edu

Office hours:

Mondays, Tuesdays, Thursdays, Fridays: 2:00 – 3:20 PM

Fridays: 12:30 – 1:50 PM

Research Interests:

Nonlinear dynamical embedded systems

Memristors

Nonlinear Dynamics in Biology

Research projects:

TBA

• CONTACT

Department of Computer Science

STEM Building, Room 200

The College of New Jersey

P.O. Box 7718

2000 Pennington Rd.

Ewing, NJ 08628

609.771.2268

cs@tcnj.edu

Department Office

tel:609-771-2268mailto:cs@tcnj.eduhttps://computerscience.tcnj.edu/about-the-department/contact/

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CURRICULUM VITAE

Dr. V. Nirmal Kumar, Ph.D.(Phy.-India), Ph.D.(Engg.-Japan)

Aerospace Project Research Associate

Department of Interdisciplinary Space Science

Institute of Space and Astronautical Science

Japan Aerospace Exploration Agency (JAXA)

3-1-1 Yoshinodai, Chuo, Sagamihara

Kanagawa, Japan – 252-5210

E-mail:nirmalvelu@gmail.com / nirmalvelu@jaxa.jp

Phone: +81-50-3362-2836 / +81-70-6912-0716

FAX: +81-42-759-8808

Web.: http://inatomi-lab.isas.jaxa.jp/Members/nirmalvelu.html

(https://scholar.google.co.in/citations?user=qm2qn2cAAAAJ&hl=en

https://www.researchgate.net/profile/Nirmal_Velu)

CAREER OBJECTIVES

Being part of a progressive educational/research institution that gives scope to enhance my

research knowledge, skills and reach the apex in the scientific field with sheer dedication

and hard work. To establish a challenging research position in the field of materials

Science.

EDUCATIONAL QUALIFICATION

• Ph.D., (Engineering – Materials Science) (2013 - 2016) under the guidance of

Prof. Yasuhiro Hayakawa, Research Institute of electronics, Shizuoka University,

Hamamatsu, Japan – 432-8011.

• Ph.D., (Physics – Materials Science) (2011 - 2015) under the guidance of

Prof. R. Gopalakrishnan, Department of Physics, Anna University, Chennai – 600 025.

• M.Sc., (Materials Science) (2009 - 2011) in Department of Physics, Anna University,

Chennai – 600 025. (81.4 %)

• B.Sc., (Physics) (2006 - 2009) in Presidency College, Chennai - 600 005. (University

of Madras). (80.5 %)

• D.T.ed., (Teacher education) (2003 - 2005) in District Institute for Education and

Training (DIET), Ranipet, Vellore – 632 402. (81 %)

• H.Sc., (School leaving exam) (2003) in Government Higher Secondary School,

Kalavai – 632 506. (92.9 %)

http://inatomi-lab.isas.jaxa.jp/Members/nirmalvelu.htmlhttps://scholar.google.co.in/citations?user=qm2qn2cAAAAJ&hl=enhttps://www.researchgate.net/profile/Nirmal_Velu

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AREA OF INTEREST

• Synthesis and analysis of novel semiconducting materials

• II-VI and III-V binary, ternary semiconductors

• Microgravity experiments

• IR in-situ observation of epitaxial growth process using interferometry

• Thin film deposition for photovoltaic application

• Growth of single/poly crystals from solution/melt growth

• Fabrication of photovoltaic/thermophotovoltaic devices

• Fabrication of thermoelectric device

RESEARCH WORK

• Nano material synthesis and thin film deposition (Physical and chemical methods) for

photovoltaic applications

• Microgravity experiments – Growth and analysis of InGaSb ternary alloys using the

space platforms - International Space Station (ISS) and Chinese Recoverable Satellite

SJ10

• III-V thermoelectric materials – Synthesis of binary and ternary antimonide

semiconductors by melt solidification process for thermoelectric applications

• In-situ observation of solid-liquid interface during epitaxial growth of

semiconductors by passing Infra-Red laser light through substrate using

interferometric technique

PH.D. DISSERTATION TITLES

1. Ph.D., Anna University, Chennai, India

[July 2011 to June 2015; Thesis submitted during November 2014]

Title of the thesis: “Deposition of CdS and CuCdS2 compound semiconductor thin

films and their characterization for device application”

2. Ph.D., Shizuoka University, Hamamatsu, Japan

[October 2013 – September 2016; Thesis submitted during May 2016]

Title of the thesis: “Effects of gravity and orientation on the growth properties of

InGaSb ternary alloy semiconductors: Experiments under microgravity on board the

International Space Station and normal gravity on Earth”

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M.SC DISSERTATION TITLE

Title of the thesis: “Deposition of CdS thin film by photochemical and chemical bath

deposition methods and its characterization”

PAPERS PUBLISHED in INTERNATIONAL JOURNALS

1. V.Nirmal Kumar, R.Suriakarthick, Y.Hayakawa, R.Gopalakrishnan, Enhanced

electrical and optical properties of CdS:Na thin films by photochemical deposition,

(2017) Journal of Crystal Growth, Vol: 468, pp: 208-211.

2. Y.Hayakawa, V.Nirmal Kumar, M.Arivanandhan, G.Rajesh, T.Koyama, Y.Momose,

K.Sakata, T.Ozawa, Y.Okano, Y.Inatomi, Effects of gravity and crystal orientation

on the growth of InGaSb ternary alloy semiconductors - experiments at the

international space station and on Earth, (2017) International Journal of

Microgravity Science and Application, Vol: 34(1), pp:340111:1-12.

3. V.Nirmal Kumar, M.Arivanandhan, G.Rajesh, T.Koyama, Y.Momose, K.Sakata,

T.Ozawa, Y.Okano, Y.Inatomi, Y.Hayakawa, Investigation of directionally solidified

InGaSb ternary alloys from Ga and Sb faces of GaSb under prolonged microgravity

at the International Space Station, (2016) npj Microgravity, Vol:2, pp: 16026-1-7.

4. V.Nirmal Kumar, M.Arivanandhan, T.Koyama, H.Udono, Y.Inatomi, Y.Hayakawa,

Effects of varying indium composition on the thermoelectric properties of

InxGa1-xSb ternary alloys, (2016) Applied Physics A, Vol:122, pp: 885-1-9.

5. J.Yu, Y.Liu, X.Pan, H.Zhao, V.Nirmal Kumar, M.Arivanandhan, Y.Momose,

Y.Hayakawa, X.Zhang, X.Luo, Y.Okano, Y.Inatomi, A Review on InGaSb Growth

under Microgravity and Terrestrial Conditions Towards Future Crystal Growth

Project Using Chinese Recovery Satellite SJ-10, (2016) Microgravity Science and

Technology, Vol:28, pp: 143 – 154.

6. S.Karuppusamy, K.Dinesh Babu, V.Nirmal Kumar, R.Gopalakrishnan, Thermal

kinetic and dielectric parameters of acenapthene crystal grown by vertical

Bridgeman technique, (2016) Applied Physics A, Vol: 122, pp:498-1-8.

http://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://www.jasma.info/journal/wp-content/uploads/sites/2/2017/01/2017_p340111.pdfhttp://www.jasma.info/journal/wp-content/uploads/sites/2/2017/01/2017_p340111.pdfhttp://www.jasma.info/journal/wp-content/uploads/sites/2/2017/01/2017_p340111.pdf

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7. Y.Inatomi, K.Sakata, M.Arivanandhan, G.Rajesh, V.Nirmal Kumar, T.Koyama,

Y.Momose, T.Ozawa, Y.Okano, Y.Hayakawa, Growth of InxGa1-xSb alloy

semiconductor at the International Space Station (ISS) and comparison with

terrestrial experiments, (2015) npj Microgravity, Vol: 1, pp:15011-1-6.

8. V.Nirmal Kumar, R.Suriakarthick, S,Karuppasamy, Mukul Gupta, Y.Hayakawa,

R.Gopalakrishnan, Effect of precursor concentration on the properties and tuning of

conductivity between p-type and n-type of Cu1-xCdxS2 thin films deposited by single

step solution process as a novel material for photovoltaic application, (2015) RSC

Advances, vol:5, pp: 23015-23021.

9. R.Suriakarthick, V.Nirmal Kumar, R.Gopalakrishnan, Effect of substrate temperature

on Copper Antimony Sulphide thin films from thermal evaporation, (2015) Journal

of Alloys and Compounds, Vol: 651, pp: 423-433.

10. V.Nirmal Kumar, R.Suriakarthick, Y.Hayakawa, Shamima Hussain, G.M.Bhalerao,

Mukul Gupta, Vasant Sathe, R.Gopalakrishnan, Deposition of CuCdS2 thin film by

single step solution process at low temperature as a novel absorber for photovoltaic

applications, (2014) Superlattices and Microstructures, Vol: 76, pp: 125-134.

11. R.Suriakarthick, V.Nirmal Kumar, R.Indirajith, T.S.Shyju, R.Gopalakrishnan,

Photochemically deposited and post annealed copper indium disulphide thin films,

(2014) Superlattices and Microstructures, Vol: 75, pp: 667-679.

12. R.Suriakarthick, V.Nirmal Kumar, T.S.Shyju, R.Gopalakrishnan, Investigation on

post annealed copper sulfide thin films from photochemical deposition technique,

(2014), Materials Science in Semiconductor Processing, Vol:26, pp:155-161.

13. V.Nirmal Kumar, R.Suriakarthick, T.S.Shyju, R.Gopalakrishnan, Deposition of CdS

thin films by chemical bath and photochemical deposition methods and its

characterization, (2013) AIP Conference Proceedings, Vol: 1536, pp: 347-348.

http://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Suriakarthick&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=T.+S.+Shyju&option1=author&noRedirect=truehttp://scitation.aip.org/search;jsessionid=1okh447abk9ol.x-aip-live-02?value1=R.+Gopalakrishnan&option1=author&noRedirect=true

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AWARDS / DISTINCTION

1. Dean’s Award for Graduate School of Science and Technology by Shizuoka

University, Japan for outstanding work in scholarly research during Ph.D. (16th

September 2016).

2. Monbukagakusho:MEXT fellowship for research student by Ministry of Education,

Culture, Sports, Science and Technology, Japan for 3 years (1st October 2013 to 30th

September 2016) to do research. (Research field: Growth and analyses of InGaSb

crystal under microgravity condition at the international space station, in

collaboration with Japan Aerospace Exploration Agency [JAXA]).

3. Young Researcher Award for the best oral presentation on “Growth of InGaSb alloy

semiconductor crystal under 1G condition as a preliminary study for microgravity

experiment at International Space Station”, Inter Academia - 13th International

conference on global research and education, Riga Technical Institute, Riga, Latvia

(10-12 September 2014).

4. Mori-Fighting Spirit Award for the best presentation on “Effect of gravity on InGaSb

crystal growth - Microgravity at International Space Station and 1G conditions”, Japan

Society of Microgravity Application 28th academic lecture – JASMAC-28, Egress

Himeji, Himeji, Japan (26-28 November 2014).

5. First class in post graduate degree (M.Sc.,) with the percentage of marks 81.4%.

6. First class with Distinction in under graduate degree (B.Sc.,) with the percentage of

marks 80.5%.

7. Best student award for obtaining school first with the percentage of marks 92.7% at

Higher Secondary level (School leaving exam) (2002-2003).

PAPER PRESENTED in INTERNATIONAL CONFERENCES

1. V. Nirmal Kumar, R.Suryakarthick, R.Gopalakrishnan, ‘Effect of Annealing on the

deposition of CdS thin films by chemical bath and photochemical deposition methods’,

‘Indo-German workshop on advanced materials for future energy requirements’, held

during 29 November – 1 December 2012, at University of Delhi, New Delhi.

2. V. Nirmal Kumar, R.Suryakarthick, T.S.Shyju, R.Gopalakrishnan, ‘Deposition of CdS

thin films by chemical bath and photochemical deposition methods and their

characterization’, ‘International conference on Recent trends in Applied Physics and

Materials science’, held during 1-2 February, 2013, at College of engineering and

technology, Bikaner, Rajasthan.

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3. V. Nirmal Kumar, Y.Katsumata, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi,

Y.Okano, Y.Hayakawa, ‘Ground-based experiments for crystal growth of InGaSb’, The

1st Japan-China Workshop on Microgravity Sciences, 9th February 2014, RIE,

Shizuoka University, Hamamatsu, Japan.

4. V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi,Y.Okano,

Y.Hayakawa et al., ‘Growth of InGaSb alloy semiconductor crystal under 1G condition

as a preliminary study for microgravity experiment at International Space Station’,

Inter Academia-13th International conference on global research and education, 10-12

September 2014, Riga Technical Institute, Riga, Latvia, Europe.

5. V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi, Y.Okano,

Y.Hayakawa et al. ‘Growth and properties of InGaSb alloy semiconductor crystals

grown under microgravity and 1G conditions’, The 75th JSAP autumn meeting,

17-20, September, 2014, Sapporo campus, Hokkaido University, Hokkaido, Japan.

6. V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi, Y.Okano,

Y.Hayakawa et al. ‘Effect of gravity on InGaSb crystal growth - Microgravity at

International Space Station and 1G conditions’, Japan Society of Microgravity

Application 28th academic lecture – JASMAC-28, 26-28, November, 2014, Egress

Himeji, Himeji, Hyogo prefecture, Japan.

7. V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi, Y.Okano,

Y.Hayakawa et al. ‘Growth process of InGaSb under microgravity and normal gravity

conditions’, 2015 International Symposium toward the Future of Advanced Researches

in Shizuoka University, 27-28, January, 2015, Shizuoka University, Hamamatsu, Japan.

8. V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi,Y.Okano,

Y.Hayakawa et al. ‘Properties of InGaSb crystals grown under microgravity (μG) at

International Space Station and normal gravity (1G) conditions’, The 62nd JSAP spring

meeting, 11-14, March 2015, Tokai University, Shonan campus, Japan

9. V. Nirmal Kumar, R.Suryakarthick, R.Gopalakrishnan, Y.Hayakawa, ‘Physical

properties of novel Cu1-xCdxS2 thin films grown by chemical bath deposition method

for low cost solar cell’, The 76th JSAP autumn meeting, 13-16, September 2015,

Nagoya, Japan.

10. V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi,Y.Okano,

Y.Hayakawa et al., ‘Growth properties of InGaSb ternary alloys under

microgravity and normal gravity conditions’, The Joint Conference of

6th International Symposium on Physical Sciences in Space – ISPS-6 and ITTW

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2015, 14-18, September 2015, Kyoto, Japan.

11. V. Nirmal Kumar, R.Suryakarthick, R.Gopalakrishnan, Y.Hayakawa, ‘Physical

properties of novel CuxCd1-xS2 compound semiconductor thin films by single step

solution process for low cost photovoltaic devices’, The 14th International Conference

on Global Research and Education – Inter Academia 2015, 28-30, September 2015,

Hamamatsu, Japan.

12. V. Nirmal Kumar, M. Arivanandhan, G.Rajesh, T.Koyama, K.Sakata, Y.Momose,

T.Ozawa, Y.Okano, Y.Inatomi, Y.Hayakawa, ‘Gravity effect on the properties of

InxGa1-xSb ternary alloys grown at the International Space Station’, IEICE Technical

Committee on Electron Device, 19-20 May 2016, Shizuoka University, Hamamatsu,

Japan.

13. V. Nirmal Kumar, R.Suryakarthick, R.Gopalakrishnan, Y.Hayakawa, ‘Enhanced

Electrical and Optical Properties of CdS:Na Thin Films by Photochemical

Deposition’, The 18th International Conference on Crystal Growth and Epitaxy, 2016,

7-12, August 2016, Nagoya, Japan.

PAPER PRESENTED IN NATIONAL CONFERENCES

1. V. Nirmal Kumar, T.S.Shyju, R.Gopalakrishnan, ‘Deposition of CdS thin films by

Photo Chemical and Chemical Bath Deposition methods and its characterization’,

DAE BRNS 6th National Symposium on Pulsed Laser Deposition of Thin Films and

Nanostructured Materials, 9-11, November 2011, Materials Research Centre, Indian

Institute of Science, Bengaluru.

2. V. Nirmal Kumar, R.Gopalakrishnan, ‘Deposition and characterization of copper

cadmium sulphide (CuCdS2) thin films by chemical bath deposition method’, XVII

National Seminar on Crystal Growth in association with Indian Association for Crystal

Growth, 9-11, January 2013, Anna University, Chennai.

3. V.Nirmal Kumar, M.Arivanandhan, G.Rajesh, T.Koyama, K.Sakata, Y.Momose,

T.Ozawa, Y.Okano, Y.Inatomi, Y.Hayakawa, ‘Growth properties of InGaSb under

normal and microgravity condition at International Space Station’, JST SAKURA and

SSSV Seminar Program, 3 September, 2015, Shizuoka University, Hamamatsu, Japan.

4. V. Nirmal Kumar, R.Suriakarthick, R.Gopalakrishnan, Y.Hayakawa, ‘Novel ternary

compound Cu1-xCdxS2 thin films by single step solution process for low cost

photovoltaic devices’, The 17th Takayanagi Kenjiro memorial symposium, 17-18

November 2015, Shizuoka University, Hamamatsu, Japan.

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5. V. Nirmal Kumar, M. Arivanandhan, G.Rajesh, T.Koyama, K.Sakata, Y.Momose,

T.Ozawa, Y.Okano, Y.Inatomi, Y.Hayakawa, ‘Growth properties of InGaSb ternary

alloys from Ga and Sb faces of GaSb (111) under microgravity on board the

International Space Station’, JST SAKURA and SSSV Seminar Program, 31 August,

2016 at Shizuoka University, Hamamatsu, Japan.

6. V.Nirmal Kumar, Y.Hayakawa, M.Arivanandhan, G.Rajesh, T.Koyama, Y.Momose,

K.Sakata, T.Ozawa, Y.Okano, Y.Inatomi, ‘Orientation dependent dissolution and

growth process of InGaSb ternary alloys under microgravity on board the

International Space Station’, JACG - The 40th Crystal Growth Discussion, 30 August

- 1 September 2017, Hamanako Royal Hotel, Hamamatsu, Shizuoka, Japan.

7. V.Nirmal Kumar, Y.Hayakawa, M.Arivanandhan, G.Rajesh, T.Koyama, Y.Momose,

K.Sakata, T.Ozawa, Y.Okano, Y.Inatomi, ‘Growth process of InGaSb ternary alloys

from (111)A and (111)B planes of GaSb under microgravity on board the International

Space Station’, 25-27 October 2017, College of Engineering, Nihon University,

Tsudanuma, Japan

INVITED TALKS

1. Y.Hayakawa, Y.Inatomi, V. Nirmal Kumar, M. Arivanandhan, G.Rajesh, T.Koyama,

K.Sakata, Y.Momose, T.Ozawa, Y.Okano, ‘Effect of gravity on the dissolution and

growth process of InGaSb ternary alloy bulk semiconductor’, The 16th Takayanagi

Kenjiro memorial symposium, 11–12 November 2014, Shizuoka University,

Hamamatsu, Japan.

2. Y.Hayakawa, V. Nirmal Kumar, M. Arivanandhan, G.Rajesh, T.Koyama, K.Sakata,

Y.Momose, T.Ozawa, Y.Okano, Y.Inatomi, ‘Microgravity experiment of InGaSb alloy

semiconductor crystals at International Space Station’, 60th DAE – Solid State Physics

Symposium, 21 – 25 December 2015, Amity University, Noida, U.P, India.

3. Y.Hayakawa, V. Nirmal Kumar, M.Arivanandhan, G.Rajesh, T.Koyama, K.Sakata,

Y.Momose, T.Ozawa, Y.Okano, Y.Inatomi, ‘Semiconductor crystal growth

experiments under microgravity’, The 3rd Japan-China Workshop on Materials Science

in Space, 25 – 28 March 2016, University of the Ryukyus, Okinawa, Japan.

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RESEARCH PROJECTS

As a Ph.D. student, I was a member in the following two International space

experimental projects

1. Alloy Semiconductor project – “Effects of gravity and orientation on the dissolution

and growth properties of InGaSb ternary alloys; Microgravity experiment at the

International Space Station and terrestrial experiments”, Shizuoka University in

collaboration with Japan Aerospace Exploration Agency (JAXA), Period: 2013 - 2016,

[Principal Investigators: Prof. Yasuhiro Hayakawa (Ph.D. guide), Total Project value:

250 million JPY].

2. Space Program SJ10 – “Growth properties of In0.11Ga0.89Sb ternary alloys under

microgravity at Chinese Recoverable Satellite SJ-10”, Shizuoka University and Japan

Aerospace Exploration Agency (JAXA) in collaboration with Shanghai Institute of

Ceramics, Chinese Academy of Sciences (SICCAS) and China National Space

Administration (CNSA) Period: 2013 - 2016, [Principal Investigator: Prof. Yasuhiro

Hayakawa (Ph.D. guide), Total Project value: about 10 million JPY].

In addition to these projects, I availed Student Project Grant from Shizuoka University

for the following projects.

3. Student Project grant in the field of Natural Science (2014) – “Variations in the

growth and properties of InGaSb crystals grown under microgravity (μG) and 1G

conditions”, Research Institute of Electronics, Shizuoka University. Period: 2013 –

2014, [Supervisor: Prof. Yasuhiro Hayakawa (Ph.D. guide) Total grant

value: 1,80,000 JPY]

4. Student Project grant in the field of Natural Sciences (2015) – “Orientation

dependent growth properties of InGaSb grown from GaSb (111)A and (111)B seed

crystals under microgravity (μG) and 1G conditions”, Research Institute of

Electronics, Shizuoka University. Period: 2014 – 2015, [Supervisor: Prof. Yasuhiro

Hayakawa (Ph.D. guide) Total grant value: 1,80,000 JPY]

TRAINING COURSES / SCHOOLS

1. Indo – US workshop on Frontiers of Excellence in Photovoltaics and Technology,

15–17 January 2012, Indian Institute of Technology, Bombay.

2. 7th INUP familiarization workshop on nanofabrication technologies, 4–12 June

2012, Indian Institute of Technology, Bombay.

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3. IUAC School on Thin Films 2012, 10-14 December 2012, Inter University

Accelerator Centre, New Delhi.

4. A Summer School on ‘Advances in Laser Spectroscopy and applications’

(SSDCAM-2013), 22nd February – 14th March 2013, Banaras Hindu University,

Varanasi, India.

RESEARCH SKILLS AND INSTRUMENTS HANDLED

Thin film deposition

• Spray Pyrolysis

• Physical Vapor Deposition

• Photo Chemical Deposition

• Chemical Bath Deposition

Crystal growth

• Czochralski technique for the growth of single crystals

• Expertise in the growth of GaSb single crystals along the primary planes (001),

(110) and (111)

• Bridgeman method for the growth of poly/single crystal

• Vertical gradient furnace and three zone furnace system for diffusion controlled

growth

• Growth of poly crystal using tubular furnace

• Non-destructive preparation of microgravity sample for the analysis

• Defect analysis by Chemical etching of crystals

• IR in-situ observation of solid-liquid interface

Characterization Instruments

• Powder XRD Unit (Rigaku RINT Ultima III)

• Scanning electron microscope with EDX (JEOL JEM 2100)

• Electron backscatter diffraction (JEOL JSM 7001F)

• X-ray photoelectron spectroscopy (Shimadzu ESCA 3400)

• Electron probe micro analysis (JEOL JXA 8530)

• UV – Vis Spectrometer (Shimadzu 3100 spectrophotometer)

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• FT – IR Spectrometer (JASCO FTIR 6300)

• Raman spectrometer (JASCO NRS-7100)

• Hall Effect measurement system (Ecopia – HMS 3000)

• Seebeck measurement system (Ulvac-Rico ZEM 3)

• Thermal conductivity measurement system (NETZSCH-LFA 447 nano flash)

Other skills

• Synthesis of nano materials by chemical solution processes

• Having expertise in mechanical polishing of crystals to obtain mirror finished -

smooth surface

• Design and preparation of ampoule for the growth of InGaSb by vertical gradient

freezing system

• Designing and Preparation of BN and graphite crucibles for crystal growth

experiments

• Design and operation of IR in-situ observation set up

• Operating lathe and mini lathe machines to prepare various crucibles

• Design and construction of Seebeck effect and electrical resistivity measurement set-

ups.

REFERENCE PERSONS

1. Dr. Yuko Inatomi Professor

Department of Interdisciplinary Space

Science,

Institute of Space and Astronautical

Science,

Japan Aerospace Exploration Agency

(JAXA)

Sagamihara, Kanagawa – 252-5210

Japan

Email: inatomi.yuko@jaxa.jp

TEL: +81–50-3362-5180.

2. Dr. YASUHIRO HAYAKAWA Professor

Research Institute of Electronics

Shizuoka University

Hamamatsu, Shizuoka – 432 8018

Japan.

Email: royhaya@ipc.shizuoka.ac.jp

TEL: +81–053-478-1310.

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3. Dr. S. MOORTHY BABU Professor

Crystal Growth Center

Anna University

Chennai – 600 025, India.

Email: babu@annauniv.edu

TEL/FAX: +91-044-2235-8333.

PERSONAL MEMORANDUM

Father’s Name : Mr. S. Velu

Present address : 201, 1-1-18, Chuo-Ku, Higarigaoka, Sagamihara,

Kanagawa, JAPAN – 252-0227.

Permanent Address: No: 18, Yadhava Street, Kalavai - 632506, Vellore District,

Tamil Nadu, INDIA.

Date of Birth : 17-07-1986

Sex : Male

Nationality : Indian

Marital Status : Single

Languages known : Tamil, English (Read, write and speak) & Japanese (Speak)

DECLARATION

I hereby declare that the above statements are true, complete and correct to the best of my

knowledge.

Place: Japan Your’s sincerely,

(V. Nirmal Kumar)

Dr Mohamad Hafiz Bin Mamat,

Head

NANO-ElecTronic Centre (NET)

Faculty of Electrical Engineering

Universiti Teknologi MARA (UiTM)

40450 Shah Alam, Selangor, Malaysia.

Email: mhmamat@salam.uitm.edu.my PROFILE:

Dr. Mohamad Hafiz Mamat is a lecturer in the Centre for Electronics Engineering Studies (CEES) at the Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM). He also serves as a Head of NANO-ElecTronic (NET) Research Group at the faculty. Previously, he was an engineer at Perodua Manufacturing Sdn Bhd in Rawang. He received B. Eng. (Electrical & Electronic and Information Engineering) from Nagoya University in 2005, and M. Eng. in Nanoelectronics from UiTM in 2010. He then obtained his Ph.D. in Nanoelectronics from UiTM in 2013. His research interests lie in the areas of nanoelectronics and nanotechnology, ranging from theory to design to implementation. He has published more than 200 research papers in international peer-reviewed journals and proceedings. He is also the editor of 4 books and the author of 6 book chapters. He received several recognitions, including the UiTM Young Academician Award 2015, Malaysian Solid State Science and Technology Society (MASS) 2014 Award (Young Scientist Award), Young Academician of the Faculty Award 2014/2015, Young Researcher of the Faculty Award 2014/2015, Most Indexed Publication of the Faculty Award 2014/2015, Royal Chancellor`s Excellence Doctoral Award 2013, and Excellent Research Award 2013. He had won more than 30 awards, both at national and international levels, including the Best Award and Gold Award at the Malaysia Technology Expo (MTE) 2014 and the Grand Award, Diamond Award, and Gold Award at the Invention, Innovation, and Design Expo (IIDEX) 2015.

mailto:mhmamat@salam.uitm.edu.my