EasyPACK vj,op = 150°C FF300R08W2P2 B11A - Low Q - 4.2 kV

EasyPACK™ module with EDT2 IGBT and diode and PressFIT / NTC

Features• Electrical features

- Blocking voltage 750 V- Low VCE,sat

- Low switching losses- Low Qg and Crss

- Low inductive design- Tvj,op = 150°C

• Mechanical features- 4.2 kV DC 1 second insulation- High creepage and clearance distances- High power density- Integrated NTC temperature sensor- PressFIT contact technology- RoHS compliant- UL 94 V0 module frame

Potential applications• Automotive applications• (Hybrid) electrical vehicles (H)EV• Motor drivesProduct validation• Qualified according to AQG 324DescriptionThe FF300R08W2P2_B11A is a very compact and flexible product offering integrated isolation for the main inverter of hybrid andelectric vehicles. The module uses the benchmark EDT2 IGBT generation allowing 750V blocking voltage and IcN of 300A.Thechipset has benchmark current density combined with short circuit ruggedness for reliable inverter operation under harshenvironmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiencyover a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.TheEasyPACKTM package is qualified for automotive applications and is validated according to AQG 324. Its high power cyclingcapability as well as the high creepage and clearance distances add to the product reliability.The power module comes with PressFIT Pins for the signal terminals to avoid additional time consuming selective solderprocesses, which provides cost savings on system level and increases system reliability.

Neuer Schaltplan für AP00H261

22020-07-13 restricted Copyright © Infineon Technologies AG 2020. All rights reserved.Type Package MarkingFF300R08W2P2_B11A EasyPACK™ 2B Module SP005424885

FF300R08W2P2_B11AEasyPACK™ module

Datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.01www.infineon.com 2021-09-13

https://www.infineon.com

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14


Table of contents

Datasheet 2 Revision 1.012021-09-13

1 Package

Table 1 Maximum rated values

Parameter Symbol Note or test condition Values Unit

Maximum RMS module DC-terminal current1)

It,rms Tterminal = 105 °C, Tc = 65 °C 25 A

1) ItRMS: Current per pin, continous, steady state. Verified by characterization / design not by test

Table 2 Insulation coordination


Isolation test voltage VISOL 4.2 kV

Internal isolation basic insulation (class 1, IEC 61140) Al2O3

Creepage distance dcreep terminal to heatsink 11.5 mm

Creepage distance dcreep terminal to terminal 6.3 mm

Clearance dclear terminal to heatsink 10.0 mm

Clearance dclear terminal to terminal 5.0 mm

Comparative tracking index CTI > 200

Table 3 Characteristic values


Min. Typ. Max.

Stray inductance module Ls,CE 8.0 nH

Module lead resistance,terminals - chip

RCC'+EE' T = 25°C, per switch 4.00 mΩ

Storage temperature Tstg -40 125 °C

Weight G 41 g

2 IGBT, Inverter



Collector-emitter voltage VCES Tvj = 25 °C 750 V

Implemented collectorcurrent

ICN 300 A

Continuous DC collectorcurrent

IC,nom Tvj,max = 150 °C Th = 65 °C 200 A

Repetitive peak collectorcurrent

ICRM tP = 1 ms 600 A

Gate-emitter peak voltage VGES ±20 V


1 Package




Min. Typ. Max.

Collector-emitter saturationvoltage

VCE,sat IC = 200 A, VGE = 15 V Tvj = 25 °C 1.00 1.18 V

Tvj = 125 °C 0.99

Tvj = 150 °C 0.98

Gate threshold voltage VGE,th IC = 6.4 mA, VCE = VGE Tvj = 25 °C 4.9 5.8 6.5 V

Gate charge QG VGE = 15 V, VCE = 400 V 2.9 µC

Internal gate resistor RG,int Tvj = 25 °C 1.1 Ω

Input capacitance Cies f = 1 MHz, VCE = 50 V,VGE = 0 V

Tvj = 25 °C 53.0 nF

Output capacitance Coes f = 1 MHz, VCE = 50 V,VGE = 0 V

Tvj = 25 °C 0.7 nF

Reverse transfer capacitance Cres f = 1 MHz, VCE = 50 V,VGE = 0 V

Tvj = 25 °C 0.20 nF

Collector-emitter cut-offcurrent

ICES VCE = 750 V, VGE = 0 V Tvj = 25 °C 1.0 mA

Gate-emitter leakage current IGES VGE = 0 V Tvj = 25 °C 10 nA

Turn-on delay time,inductive load

td,on IC = 200 A, VCE = 400 V,VGE = 15 V, RG,on = 2.4 Ω

Tvj = 25 °C 0.21 µs

Tvj = 125 °C 0.23

Tvj = 150 °C 0.24

Rise time, inductive load tr IC = 200 A, VCE = 400 V,VGE = 15 V, RG,on = 2.4 Ω

Tvj = 25 °C 0.03 µs

Tvj = 125 °C 0.04

Tvj = 150 °C 0.04

Turn-off delay time,inductive load

td,off IC = 200 A, VCE = 400 V,VGE = 15 V, RG,off = 5.1 Ω

Tvj = 25 °C 0.70 µs

Tvj = 125 °C 0.80

Tvj = 150 °C 0.80

Fall time, inductive load tf IC = 200 A, VCE = 400 V,VGE = 15 V, RG,off = 5.1 Ω

Tvj = 25 °C 0.06 µs

Tvj = 125 °C 0.10

Tvj = 150 °C 0.10

Turn-on energy loss perpulse

Eon IC = 200 A, VCE = 400 V,Lσ = 20 nH, VGE = 15 V,RG,on = 2.4 Ω

Tvj = 25 °C 4.4 mJ

Tvj = 125 °C 7.0

Tvj = 150 °C,di/dt = 6360 A/µs

7.6

Turn-off energy loss perpulse

Eoff IC = 200 A, VCE = 400 V,Lσ = 20 nH, VGE = 15 V,RG,off = 5.1 Ω

Tvj = 25 °C 7.3 mJ

Tvj = 125 °C 10.7

Tvj = 150 °C,du/dt = 2530 V/µs

11.5


2 IGBT, Inverter


Table 5 Characteristic values (continued)


Min. Typ. Max.

SC data ISC VCC = 400 V, VGE = 15 V tP ≤ 6.0 µs,Tvj = 25 °C

3800 A

tP ≤ 4.0 µs,Tvj = 150 °C

3000

Thermal resistance, junctionto case

Rth,j-c per IGBT 0.09 K/W

Thermal resistance, junctionto heatsink

Rth,j-h per IGBT, λpaste= 3 W /(m*K) / λgrease= 3 W/(m*K)

0.25 K/W

Temperature underswitching conditions

Tvj,op -40 150 °C

3 Diode, Inverter



Repetitive peak reversevoltage

VRRM Tvj = 25 °C 750 V

Implemented forwardcurrent

IFN 300 A

Continuous DC forwardcurrent

IF,nom 200 A

Repetitive peak forwardcurrent

IFRM tP = 1 ms 600 A

I2t - value I2t VR = 400 V, tP = 50 ms Tvj = 125 °C 15770 A²s

Tvj = 150 °C 13180



Min. Typ. Max.

Forward voltage VF IF = 200 A Tvj = 25 °C 1.30 1.47 V

Tvj = 125 °C 1.20

Tvj = 150 °C 1.15

Peak reverse recoverycurrent

Irm IF = 200 A, VCE = 400 V,VGE = -8 V

Tvj = 25 °C 200 A

Tvj = 125 °C 294

Tvj = 150 °C,-diF/dt = 7250 A/µs

321


3 Diode, Inverter


Table 7 Characteristic values (continued)


Min. Typ. Max.

Recovered charge Qr IF = 200 A, VCE = 400 V,VGE = -8 V

Tvj = 25 °C 11.0 µC

Tvj = 125 °C 24.0

Tvj = 150 °C,-diF/dt = 7250 A/µs

29.0

Reverse recovery energy Erec IF = 200 A, VCE = 400 V,VGE = -8 V, RG = 2.4 Ω

Tvj = 25 °C 3.34 mJ

Tvj = 125 °C 7.02

Tvj = 150 °C,-diF/dt = 7250 A/µs

8.51

Thermal resistance, junctionto case

Rth,j-c per diode 0.17 K/W

Thermal resistance, junctionto heatsink

Rth,j-h per diode, λpaste= 3 W /(m*K) / λgrease= 3 W/(m*K)

0.36 K/W

Temperature underswitching conditions

Tvj,op -40 150 °C

4 NTC-Thermistor



Min. Typ. Max.

Rated resistance R25 TNTC = 25 °C 5 kΩ

Deviation of R100 ΔR/R TNTC = 100 °C, R100 = 493 Ω -5 5 %

Power dissipation P25 TNTC = 25 °C 20 mW

B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K




4 NTC-Thermistor


5 Characteristics diagrams

output characteristic (typical), IGBT, InverterIC = f(VCE)VGE = -8 V / +15 V

output characteristic (typical), IGBT, InverterIC = f(VCE)Tvj = 25 °C

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60

50

100

150

200

250

300

350

400

450

500

550

600

0.0 0.4 0.8 1.2 1.6 2.00

50

100

150

200

250

300

350

400

450

500

550

600

transfer characteristic (typical), IGBT, InverterIC = f(VGE)VCE = 20 V

switching losses (typical), IGBT, InverterE = f(IC)RG,off = 5.1 Ω, RG,on = 2.4 Ω, VCE = 400 V, VGE = -8 V / +15 V

5 6 7 8 9 10 110

75

150

225

300

375

450

525

600

0 50 100 150 200 250 300 350 4000

5

10

15

20

25




Switching losses (typical), IGBT, InverterE = f(RG)VCE = 400 V, VGE = -8 V / +15 V, IC = 200 A

transient thermal impedance , IGBT, InverterZth = f(t)

0 2 4 6 8 10 12 14 16 18 200

4

8

12

16

20

24

28

32

0.001 0.01 0.1 1 100.001

0.01

0.1

1

Reverse bias safe operating area (RBSOA), IGBT,InverterIC = f(VCE)Tvj = 150 °C, RG,off = 5.1 Ω, VGE = -8 V / +15 V

forward characteristic of (typical), Diode, InverterIF = f(VF)

400 450 500 550 600 650 700 750 8000

50

100

150

200

250

300

350

400

450

500

550

600

650

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80

100

200

300

400

500

600




switching losses (typical), Diode, InverterErec = f(IF)RGon = RGon(IGBT) , VCE = 400 V

Switching losses (typical), Diode, InverterErec = f(RG)VCE = 400 V, IF = 200 A

0 100 200 300 4000

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14 16 18 201

2

3

4

5

6

7

8

9

10

11

12

transient thermal impedance , Diode, InverterZth = f(t)

temperature characteristic (typical), NTC-ThermistorR = f(TNTC)

0.001 0.01 0.1 1 100.001

0.01

0.1

1

0 20 40 60 80 100 120 140 160100

1000

10000

100000




6 Circuit diagram

Neuer Schaltplan für AP00H261

22020-07-13 restricted Copyright © Infineon Technologies AG 2020. All rights reserved.

G1

C1

T1

T2

G2

E1

E2

3

2

1

Figure 2


6 Circuit diagram


7 Package outlines

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Erstellt durch Genehmigt von

Mat.-Nr.Werkstoff Modellreferenz inkl. Rev.

Rev.

00

Titel (deu./engl.) & Beschreibung

Maßbild / Dimension diagram

Ausgabedatum

FF300R08W2P2_B11A-Datasheet

W00175000

© Alle Rechte bei INFINEON TECHNOLOGIES AG , auch für den Fall von Schutzrechtanmeldungen.

W00172259_02

Blatt

1 / 1 A0

confidential

Package

Dokumentart

Dokumentstatus

Zeichnung Maßbild

In Bearbeitung

Zeichnung

DE/EN 1.0 /DE/EN 1.0 /

Allgemeintoleranz nach

-Maßstab

2 : 1

0001

FxxxRxxW2 xx TMTM

InfineonInfineon

GYYWW

EasyPIM

Drawing: W00175000

DIN EN ISO1302

1. DIN 16742-TG62. DIN ISO 2768-mk

DIN ISO13715

edges general tolerances surfaceISO 8015 principle of independencydimensions ISO 14405 GGtarget geometry according CAD filewith general tolerances method of least-squares1

All dimensions refer to module in delivery condition

00 Ersterstellung Revision Änderung Erstellt durch Genehmigt von Genehmigt am

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C1E1 G1

1

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1

E2G2T1 T2

1,40,2

16,40,5

120,35

62,80,5

(53)

480,3

56,70,3

42,50,15

22,70,316,40,2

4,50,12,30,1 x8,5+0,3

510,15

- Pin-Grid 3,2mm - Tolerance of PCB hole pattern - Hole specification for contacts see AN 2009-01 - Diameters of drill Ø1,15mm and copper thickness in hole 25-50µm

0,1

PCB hole pattern

2x9 according to screw head / washer

03,26,49,612,816

21,25

26,5

3,26,49,612,816

21,25

26,5

01,6817,6

20,8

2425,5

1,6 8 11,2

20,8

24 25,5

2,84x

Figure 3


7 Package outlines


8 Module label code

Module label code

Code format Data Matrix Barcode Code128

Encoding ASCII text Code Set A

Symbol size 16x16 23 digits

Standard IEC24720 and IEC16022 IEC8859-1

Code content ContentModule serial numberModule material numberProduction order numberDate code (production year)Date code (production week)

Digit1 – 56 - 1112 - 1920 – 2122 – 23

Example71549142846550549911530

Example

Packing label code

Code format Barcode Code128

Encoding Code Set A

Symbol size 34 digits

Standard IEC8859-1

Code content ContentModule serial numberModule material numberProduction order numberDate code (production year)Date code (production week)

IdentifierX1TS9DQ

Digit2 – 912 – 1921 – 2528 – 3133 – 34

Example950566092X0003E0754389113915

Example

X950566091T2X0003E0S754389D1139Q15

7154914284655054991153071549142846550549911530

Figure 4


8 Module label code


Revision historyDocument revision Date of release Description of changes

V1.0 2020-07-24 Target Datasheet

1.00 2021-07-29 Final datasheet

1.01 2021-09-13 Layout correction


Revision history


TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-09-13Published byInfineon Technologies AG81726 Munich, Germany © 2021 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-AAK248-003

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”).With respect to any examples, hints or any typicalvalues stated herein and/or any information regardingthe application of the product, Infineon Technologieshereby disclaims any and all warranties and liabilitiesof any kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

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EasyPACK vj,op = 150°C FF300R08W2P2 B11A - Low Q - 4.2 kV