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Reg. No.

:

R 3325

B.E./B.Tech.

DEGREE

EXAMINATION,

NOVEMBER/DECEMBER

2007

Seventh Semester

(Regulatior

2004)

Electronics and

Communication

Engineering

EC 1403

MICROWAVE

ENGINEERING

(Common

o B.E.

(Part-Time)

Sixth

SemesterRegulation

2005)

Time :

Three hours

Maximum : 100

marks

Answer ALL

questions.

PARTA- (10

x2=20 marks )

1. What

are waveguide corners,

bends and

trvists?

2.

Give

the

X-band frequency range.

3.

What are HEMT s?

4. What

is MESFET?

5.

What is transferred

electron effect?

6. What is the other name for O-type tubes?

7. Mention

the basic materiais

required for

microrvave ntegrated circuit.

8. List

the various ypes of striplines used

n MMIC.

9. Mention

two methods o measure

mpedance.

10. Define

return loss and write

its

expression.

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PARTB- (5x16=80marks )

11.

(a)

(i)

What

is

a hybrid

ring?

With

the

help

of a

neat

diagram

explain

its

working

principle.

(8)

(ii) Derive scattering matrix of E-plane Teeusing S-parameter heory

(8)

Or

(b) (i)

What

are the

advantages

of

S-parameters

over Z

or

1f

parameters.

(3)

(ii)

What

is

the directivity

of

an

ideal

directional

coupler?

Why?

(3)

(iii)

From

the

first

principles

derive

the scattering matrix of an ideal

directional

coupler.

(10)

12.

(a)

Explain

the

constructional

details

and

principle of

operation

of GaAs

MESFET

with

neat

diagrams

and

characteristic

urves

(16)

Or

(b) (i)

What

are

avalanche

ransit

time

devices?

(2)

(ii)

With

neat diagram

explain

the

construction

and

operating

principle

of

IMPATT

diode.

(iii)

Mention

any two

applications

of

IMPATT

diode

13.

(a) (i)

Write

down

RWH

theory

of Gunn

diode

(ii)

Explain

the

various

modes

of

operation

of Gunn

diode.

Or

Describe

with

the

neat

sketch

the

constructional

details

and

principie of

operation

of

a Reflex

Klystron

tube.

with

the

help

of

Applegate

diagram

illustrate

the

phenomenon

of

bunching.

(8)

Derive

expressions

or bunched

beam

current

and

efficiency.

(8)

(r2)

(2)

(6)

(10)

(i)b)

(ii)

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t4.

(a)

Explain in detail with

suitable diagrams

the

monolithic microwave ntegrated

circuit.

Or

(b)

Explain in detail

the various types

of

planar

appropriate

diagrams.

15.

(a)

Describe

in detail with block

diagram

the

through return loss

measurement.

fabrication techniques of

a

(16)

transmission

Iines with

(16)

measurement

of

VSWR

(16)

Or

(b) Explain in detail the measurement of load impedance through slotted

Iine method.

(16)

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