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ECE
Memristors for computing & Future Non-Volatile Memory Application-
Beyond transistors and silicon technologySomnath Chakraborty, Dept. Of ECE, UMASS
The Ionic and Electronic Device and Materials (IEDM) Group
CompSci 891M- 22nd September, Fall’15
Electrical and Computer Engineering
1. Present Silicon Technology.2. What is “Memristor” !3. Device operation principle/ Physics behind Resistance switching mechanism.4. Promising future/ application (NvMe, Analog Computing, Digital Computing
etc.).5. Why should we care?6. Some funny/unconventional materials as Memristors.
Electrical and Computer Engineering
Well already know this, still a fun slide to present!
Unfortunately life is not so much fun. Fundamental limits are close with present 14nm,10nm technology and it gets more and more difficult with diminishing return as we go smaller. So? What's next?
Well Played Silicon, Well Played !
Electrical and Computer Engineering
Memristors to the rescue!!!
“The Memristor was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage.”- Wikipedia
BENEFITS: •High Density•Fast•Ultra high Endurance•Non Volatile•3D stackable
insulator V
Metal 1
Metal 2
Metal 2
insulator
Metal 1
Electrical and Computer Engineering
-Memristive switching mechanism for metal/oxide/metal Nanodevices- J. JOSHUA YANG, MATTHEW D. PICKETT, XUEMA LI, DOUGLAS A. A. OHLBERG,DUNCAN R. STEWART* AND R. STANLEY WILLIAMS
Electrical and Computer Engineering
A basic Memristor with One Top Electrode(Vertical) and One Bottom Electrode(Horizontal).The cross point defines the device.
Electrical and Computer Engineering
Switching in Metal/TaOx/Ta/Metal Devices- Pt TaOx Ta Pt
Change in Resistance - ~10^2 to 10^4
Electrical and Computer Engineering
Memristor PCM STTRAM SRAM DRAMFlash
(NAND)HDD
Reciprocal density (F2) <4 4-16 20 - 60 140 6-12 1 - 4 * 2/3
Energy per bit (pJ) 0.1–3 2-25 0.1-2.5 0.0005 0.005 0.00002 1–10x10 9
Read time (ns) <10 10-50 10-35 0.1-0.3 10 100000 5–8x10 6
Write time (ns) ~10 50-500 10-90 0.1-0.3 10 100000 5–8x10 6
Retention years years years as long as
voltage applied
<< second years years
Endurance (cycles) 1012 109 1015 >1016 >1016 104 104
prototype and … … commercialized technologies
J. Joshua Yang et al., Nature Nanotechnology 8, 13 (2013)
Electrical and Computer Engineering
Intel and Micron already announced their collaboration in making these memory modules to hit store in 2016!
-Courtesy: Intel
Electrical and Computer Engineering
Outlook: Roadmap
Time
Chipdevelopment
Universal Memory
Analog and Neural Computing
W.G. Kim et al., SK-hynix J. Joshua Yang et al., HP LabsVLSI Technology Symposium (2014) 138-139
Flash
DRAM
Solid State Disk
Storage Class Memory
Electrical and Computer Engineering
Q & A?
Thank You!