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EE143 – Ali Javey
Section 6: Ion Implantation
Jaeger Chapter 5
EE143 – Ali Javey
Ion Implantation - Overview• Wafer is Target in High Energy Accelerator• Impurities “Shot” into Wafer• Preferred Method of Adding Impurities to Wafers
– Wide Range of Impurity Species (Almost Anything)
– Tight Dose Control (A few % vs. 20-30% for high temperature pre-deposition processes)
– Low Temperature Process
• Expensive Systems• Vacuum System
EE143 – Ali Javey
Equipment
dttImqA
Q
qr
mV
T
0
2
1 Dose Implanted
2 Field Magnetic
x q particle chargedon Force
B
BvF
EE143 – Ali Javey
Ion Implantation
x
Blocking maskSi
+ C(x) as-implant depth profile
Depth xEqual-Concentrationcontours
Reminder: During implantation, temperature is ambient. However, post-implant annealing step (>900oC) is required to anneal out defects.
Reminder: During implantation, temperature is ambient. However, post-implant annealing step (>900oC) is required to anneal out defects.
y
EE143 – Ali Javey
Advantages of Ion Implantation• Precise control of dose and depth profile• Low-temp. process (can use photoresist as mask)• Wide selection of masking materials
e.g. photoresist, oxide, poly-Si, metal
• Less sensitive to surface cleaning procedures• Excellent lateral uniformity (< 1% variation across 12” wafer)
n+n+
Application example: self-aligned MOSFET source/drain regions
SiO2
p-Si
As+As+ As+
Poly Si Gate
EE143 – Ali Javey
Ion Implantation Energy Loss Mechanisms
Si+
+
Si
Si
e e
+ +Electronicstopping
Nuclearstopping
Crystalline Si substrate damaged by collision
Electronic excitation creates heat
EE143 – Ali Javey
Light ions/at higher energy more electronic stopping
Heavier ions/at lower energy more nuclear stopping
EXAMPLES Implanting into Si:
Ion Energy Loss Characteristics
H+
B+
As+
Electronic stoppingdominates
Electronic stoppingdominates
Nuclear stoppingdominates
EE143 – Ali Javey
Stopping Mechanisms
E1(keV) E2(keV)B into Si 3 17P into Si 17 140As into Si 73 800
EE143 – Ali Javey
Substrate
Less damageSe > Sn
More damage at end of range Sn > Se
Surface
x ~ Rp
A+
Eo = incidentkineticenergy
Se
E ~ 0
Sn
E=Eo
Se
Sn
Depth xSn dE/dx|nSe dE/dx|e
Electronic / Nuclear Stopping: Damage
EE143 – Ali Javey
Simulation of 50keV Boron implanted into Si
EE143 – Ali Javey
Model for blanket implantation
pp
p
p
pp
RNdxxNQ
R
R
RxNxN
0
p
2
2
2= Dose
StraggleR
Range Projected
2exp
ProfileGaussian
EE143 – Ali Javey
Rp and Rp values are given in tables or charts e.g. see pp. 113 of Jaeger
Note: this means 0.02 m.
Projected Range and Straggle
EE143 – Ali Javey
Selective Implantation
solution ldimensiona-one is xN
straggle transverse
222
1
,
R
R
ayerfc
R
ayerfcyF
yFxNyxN
EE143 – Ali Javey
Transverse (or Lateral) Straggle (Rt or R)
Rt
RtRp
>1
Rt
Rp
EE143 – Ali Javey
y
Mask
C(y) at x=Rp
x = Rp
Implanted specieshas lateral distribution,larger than mask opening
Implanted specieshas lateral distribution,larger than mask opening
x
y
Higher concentrationLowerconcentration
Feature Enlargement due to lateral straggle
EE143 – Ali Javey
(2) Projected Range:
(3) Longitudinal Straggle:
(1) Dose C x dx0
(4) Skewness:
(5) Kurtosis:
dxxCxRp
0
1
dxxCRxR pp
0
22 1
( ) ( ) 00,
30
3
<>-
orMdxxCRpxM
0
4 dxxCRx p
Rpx
C(x)
Kurtosis characterizes thecontributions of the “tail” regions
-describes asymmetry between left side and right side
Definitions of Profile Parameters
EE143 – Ali Javey
Selective Implantation – Mask thickness
• Desire Implanted Impurity Level to be Much Less Than Wafer Doping
N(X0) << NB
or
N(X0) < NB/10
EE143 – Ali Javey
What fraction of dose gets into Si substrate?
x=0 x=d
C(x)Mask material (e.g. photoresist)
Si substrate
C(x) Mask material with d=
x=0 x=d
-
Transmission Factor of Implantation Mask
EE143 – Ali Javey
T C x dx C x dx
erfcd R
R
erfc x e dy
C x d
C x R
d
p
p
yx
p
00
0
4
1
2 2
12
10
2
Rule of thumb Good masking thickness:
d R Rp p 4 3. ~
are values of for ions intothe masking material
RpRp ,
Transmitted Fraction
EE143 – Ali Javey
Junction Depth
B
pppj
Bp
pjp
Bj
N
NRRx
NR
RxN
NxN
ln2
2exp
2
2
The junction depth is calculated from the point at which the implant profile concentration = bulk concentration:
EE143 – Ali Javey
Sheet Resistance RS of Implanted Layers
x
C(x) log scale
xj
CB
n
Total doping conc
p
p-sub (CB)
n
jx
0 B
S
dxCxCxq
1R
Example:n-type dopants implantedinto p-type substrate
x =0
x =xj
x
EE143 – Ali Javey
Approximate Value for RS
R
q C x dx q
Rq
R ohm
s x
s
s
j
1 1
10
If C(x) >>CB for most depth x of interest and use approximation: (x) ~ constant
use the for the highestdoping region which carriesmost of the current
This expression assumes ALLimplanted dopants are 100%electrically activated
or ohm/square
EE143 – Ali Javey
200 keV Phosphorus is implanted into a p-Si ( CB= 1016/cm3) with a dose of 1013/cm2 .
From graphs or tables , Rp =0.254 m , Rp=0.0775m
(a) Find peak concentration
Cp = (0.4 x 1013)/(0.0775 x10-4) = 5.2 x1017/cm3
(b) Find junction depths
(c) Find sheet resistance
(b) Cp exp[ -( xj-0.254)2/ 2 Rp2]= NB with xj in m
( xj - 0.254)2 = 2 (0.0775)2 ln [ 5.2 1017/1016]
or xj = 0.254 ± 0.22 m ; xj1 = 0.032 m and xj2 = 0.474 m
From the mobility curve for electrons (using peak conc as impurity conc), n= 350 cm2 /V-sec
Rs = 1
qn =
11.610-19 350 1013 1780 /square.
PhosphorusImplant
p-substrate (1E16 /cm3)
x
x
j1
j2
R p
CB
Example Calculations
EE143 – Ali Javey
Channeling
EE143 – Ali Javey
Use of tilt to reduce channeling
To minimize channeling, we tilt wafer by 7o with respect to ion beam.To minimize channeling, we tilt wafer by 7o with respect to ion beam.
Random component
channeled component
C(x)
x
Axial ChannelingPlanar ChannelingRandom
Lucky ions fall into channel despite tilt
EE143 – Ali Javey
Si+
1 E15/cm2
Si crystal
Disadvantage : Needs an additional high-dose implantation stepDisadvantage : Needs an additional high-dose implantation step
B+
Si crystal
Amorphous Si
Step 1High dose Si+implantation to covertsurface layer intoamorphous Si
Step 2Implantation ofdesired dopantinto amorphous surface layer
Prevention of Channeling by Pre-amorphization
EE143 – Ali Javey
With Accelerating Voltage = x kV
B+
P+
As+
Kinetic Energy = x · keV
B+++
B++ Kinetic Energy = 2x · keV
Kinetic Energy = 3x · keV
Singlycharged
Doublycharged
Triplycharged
Note: Kinetic energy is expressed in eV . An electronic charge q experiencing a voltage drop of 1 Volt will gain a kinetic energy of 1 eV
Kinetic Energy of Multiply Charged Ions
EE143 – Ali Javey
BF2+
Kinetic Energy = x keV
BFF
B has 11 amuF has 19 amu
accelerating voltage= x kV+ -
%20191911
11
BFof.E.K
Bof.E.K
vm2
1Fof.E.K
vm2
1Bof.E.K
vvvVelocity
2
2BF
2BB
FFB
Molecular ion will dissociate immediatelyinto atomic components after entering a solid.All atomic componentswill have same velocityafter dissociation.
SolidSurface
Molecular Ion Implantation
EE143 – Ali Javey
Implantation Damage
EE143 – Ali Javey
Amount and type of Crystalline Damage
EE143 – Ali Javey
(1) Restore Si crystallinity.
(2) Place dopants into Si substitutional sites for electrical activation
After implantation, we need an annealing step.A typical anneal will:
Post-Implantation Annealing Summary
EE143 – Ali Javey
Deviation from Gaussian Theory
• Curves deviate from Gaussian for deeper implants (> 200 keV)• Curves Pearson Type-IV Distribution Functions (~sum of 4 Gaussians)
EE143 – Ali Javey
Shallow Implantation
EE143 – Ali Javey
Rapid Thermal Annealing
•Rapid Heating•950-1050o C•>50o C/sec•Very Low Dt
(b)
EE143 – Ali Javey
Dose-Energy Application Space