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Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

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Page 1: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Electronic Polarons in Narrow band Semiconductors and

Metals

G.A.SawatzkyUniversity of British Columbia

Page 2: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

collaborators

• Bayo Lao UBC• Subhra Gupta UBC• Hiroki Wadati UBC• Ilya Elfimov UBC• Mona Berciu UBC• Andrea Damascelli

UBC

• Hao Tjeng Cologne/Dresden

• Jeroen van den Brink Leiden/Dresden

• Jan Zaanen Leiden

Page 3: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

content• Very brief introduction to TM oxide electronic

structure• Want happens at surfaces and interfaces • Surface band gaps, superexchange, orbital

ordering ,Polar surfaces• Non uniform polarizability; Range and sign of

Coulomb interactions in ionic compounds• Strange short range Coulomb interactions in Fe

Pnictides

Page 4: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Wide diversity of properties • Metals: CrO2, Fe3O4 T>120K• Insulators: Cr2O3, SrTiO3,CoO• Semiconductors: Cu2O• Semiconductor –metal: VO2,V2O3, Ti4O7• Superconductors: La(Sr)2CuO4, LiTiO4, YBCO• Piezo and Ferroelectric: BaTiO3• Catalysts: Fe,Co,Ni Oxides• Ferro and Ferri magnets: CrO2, gammaFe2O3• Antiferromagnets: alfa Fe2O3, MnO,NiO ---• Ionic conductors (batteries) LixNi1-xO• Oxide fuel cells use Manganites and cobaltatesProperties depend in detail on composition and structure

Page 5: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Phase Diagram of La1-xCaxMnO3

Uehara, Kim and Cheong

R: Rombohedral

O: Orthorhombic(Jahn-Teller distorted)

O*: Orthorhombic(Octahedron rotated)

Probably the most elaborate example Of all kinds of polarons

Page 6: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Mizokawa et al PRB 63, 024403 2001

Mn4+ , d3, S=3/2 ,No quadrupole ; Mn3+, S=2, orbital degeneracy

Page 7: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Ordering in strongly correlated systemsStripes in Nd-LSCO

QC ~ 1 eQO ~ 0

Q < 0.5 e

Charge inhomogeneity in Bi2212

Pan, Nature, 413, 282 (2001); Hoffman, Science, 295, 466 (2002)

Q ~ 0.1 e

Quadrupole moment ordering

rivers of Charge—Antiferro/Antiphase

Page 8: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Correlated Electrons in TM Oxides

• J.Hubbard, Proc. Roy. Soc. London A 276, 238 (1963)• ZSA, PRL 55, 418 (1985)

If Δ < (W+w)/2 Self doped metal

dn dn dn-1 dn+1

U :

p6 dn p5 dn+1Δ :

U = EITM – EA

TM - Epol

Δ = EIO – EA

TM - Epol + δEM

EI ionization energyEA electron affinity energyEM Madelung energy

Cu (d9)

O (p6)

Epol depends on surroundings!!!

At a surface the charge transfer energy decreases , U increases

Page 9: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Interfaces between narrow band semiconductors and metals may

be very different from broad band semiconductors like Si or GaAs

Page 10: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Influence of the La AlO3 thickness on a SrTiO3 substrate on the conductivity

S.Thiel et al Science 313, 1942 (2006)

Page 11: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

N.Reyren et al Science express 317, 1196 207

Superconducting interface SrTiO3/LaAlO3

Page 12: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Narrow band width ultra thin layers on Polarizable media

• correlated electron systems mostly have band widths of only 1-2 eV

• Molecular solids have very small band widths of 1eV or less

• Si,GaAs have band widths of 20-30 eV and behave very differently at interfaces

Page 13: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Manipulating Material Properties

How about using Image Charge Screening ?

magnetic : (super) exchange, TC, TN

electrical : (super) conductivity, TC, M-I-T

optical : band gaps

D

eEE II 22

1 20

D

eEE AA 22

1 20

Coulomb energy :

Charge transfer energy :

Band gap :

D

eUU

2

2

0

D

e

2

2

0

D

eEE gg 2

20

U

tJ

2

U

tJ

2

4

Page 14: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

q’ q

2 1R1

R2n

a

0

Potential of a point charge in the neighbourhood of a dielectric Macroscopic continuum - uniform

4)( 21 nDD

- surface charge

0)( 21 nEE

lE 41

02 E0 E

0z0z

211

'1

R

q

R

q

qq

)(

)('

12

12

Energy to create a charge q at a :

Q

o a

Qqdq

aE

21

21

1

2

12

12

1 42

1

Page 15: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Si, Ge Molecular

Egap

GapHOMO s

LUMO pW

Page 16: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

EF

Egap ~ 1eV

Egap = constant ?EF

Conventional wide band semiconductor –metal interface

Narrow band semiconductor –metal interface in whichThe polarization cloud can follow the electron yielding “ELECTRONIC POLARON’’

Examples are molecular solids , strongly correlated systems , TM, RE-----

Page 17: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Combined photoemission (solid lines) and inverse photoemission (dots with solid lines as guide to the eye) spectra of the C60 monolayer on Ag(111) (upper panel) and the surface layer of solid C60 (lower panel). Also included are the photoemission spectra (dashed lines) of the fully doped C60 (“K6C60”) monolayer on Ag(111) and the surface layer of solid K6C60.

Band gap is reduced !

Molecular Orbital Structure is conserved !

R. Hesper, et al Strongly reduced band gap in a correlated insulator in close proximity to a metalEurophysics Letters 40, (1997) 177-182.

S. Altieri, et al. Reduction of Coulomb and charge transfer energies in oxide films on metals Phys. Rev. B59 (1999) R2517-2520.

Page 18: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

polarizability in TM compounds is very non uniform

The dielectric constant is a function of r,r’,w and not only r-r’,w and so Is a function of q,q’,w

Strong local field corrections for short range interactions

arXiv:0808.1390 2008, EPL 86, 17006 (2009) Heavy anion solvation of polarity fluctuations in Pnictides G.A. Sawatzky, I.S. Elfimov, J. van den Brink, J. Zaanen

arXiv:08110214v 2008 PRB 79, 214507 (2009) Electronic polarons and bipolarons in Fe-based superconductors Mona Berciu, Ilya Elfimov and George A. Sawatzky

Meinders et al PRB 52, 2484 (1995)Van den Brink et al PRL 75, 4658 (1995)J. van den Brink and G.A. Sawatzky EPL 50, 447 (2000)

Page 19: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Homogeneous Maxwell Equations

(r,r’) —> (r – r’) —> (q)

Ok if polarizability is uniform

ε(q)

(q)VV(q)

0

In most correlated electron systems and molecular solids the polarizability is actuallyVery NONUNIFORM

Page 20: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Effective Hamiltonians can be misleading

• Hubbard like models are based on the assumption that longer range coulomb interactions are screened and the short range on site interactions remain

• However U for the atom is about 20 eV but U as measured in the solid is only of order 5 eV and for the pnictides even less than this

• HOW IS THIS POSSIBLE?

Page 21: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia
Page 22: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

il

alliii

innPnnzPUH

,2int 2)2(

So the reduction of the Hubbard U in a polarizable medium like this introduces a strong Next nn repulsive interaction. This changes our model!!

For a different geometry actually the intersite interaction can also be strongly reduced perhaps even Attractive ( Fe Pnictides)

Page 23: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia
Page 24: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Note short range interactions are reduced “ screened ” and intermediate

range interactions are enhanced or antiscreened-quite opposite to

conventional wisdom in solid state physics

Jeroen van den Brink Thesis U of Groningen 1997

Page 25: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

+

eћ ћ

e

PES (EI) IPES (EA)

Full polarization can develop provided that Dynamic Response Time of the polarizable medium is faster than

hopping time of the charge

E (polarizability) > W ; E MO energy splitting in molecules, plasma frequency in metals-----

A Picture of Solvation of ions in a polarizable medium

Page 26: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

We are alive because of Solvation

Ions both positive and negative in our bodies regulate most everything

Page 27: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Rough estimateAtomic or ionic polarizability ~volume

• Consider atom = nucleus at the center of a uniformly charge sphere of electrons

• In a field E a dipole moment is induced P=αE

• For Z = 1 and 1 electron restoring force =

Page 28: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Reduction of U due to polarizability of O2- (SOLVATION)

U = EITM – EA

TM -2Epol

EI ionization energyEA electron affinity energy

i

Epol2

1

Epol = 2 For 6 nn of O2- ~ 13eVFor 4 nn As3- ~17eV

ELECTONIC POLARON

Page 29: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

What about intersite interaction V?

For pnictides the Fe-As-Fe nn bond angle is ~70 degrees Therefore the contribution to V is attractive ~4 eV

For the cuprates the Cu-O-Cu bond angle is 180 degrees therefore the repulsive interaction is enhanced! i.e. larger than in free space

Page 30: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Polarization cloud For Two charges on Neighboring Fe “ELECTRONIC

BIPOLARON

Page 31: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

2 level model for the dynamic high frequency polarizability and motion of

the polaron/bipolaron

arXiv:08110214v 2008 PRB 79, 214507 (2009) Electronic polarons and bipolarons in Fe-based superconductors Mona Berciu, Ilya Elfimov and George A. Sawatzky

De Boer et al PRB 29, April 1984 Exitonic satellites in core level spectroscopies

Page 32: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia
Page 33: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

= 4p-5s excitation energy

Page 34: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Because Omega is a high energy we can use perturbation theory

in t as the smallest We assume only one particle so that U

is not active

Page 35: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Polarization cloud For Two charges on Neighboring Fe “ELECTRONIC

BIPOLARON

Mona Berciu et al PRB 79, 214507 (2009)

Page 36: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

The Motion of a single quasi particleThese move like electronic polarons

i.e. the overlap integral of the polarization clouds

Mona Berciu et al PRB 79, 214507 (2009)

Page 37: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

The effective polaron mass is simply t/teff =2.2 this is light compared to conventional lattice polaron masses

Mona Berciu et al PRB 79, 214507 (2009)

Page 38: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Angular resolved phtoemission comparison with LDA LaFePO Lu et. al Nature 455, 81 2008

NOTE The band theory result has been shifted up by 0.11 eV and scaled down by a factor of 2.2

Page 39: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

What about the nn interaction?Can this lead to bipolaronic bound

states? And if so what is their mass

Page 40: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia
Page 41: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Note that the bipolaron mass is only 8 times the free particle mass this Is again much lighter than for lattice bipolarons allowing for an eventual high Bose Einstein condensation T.

Page 42: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Systematics of Tc

• Tc variation with bond angles bond lengths and polarizabilities

• Note that often the As-Fe-As bond angle is used or the orthorhombic distortion in the plane or the Fe-As-Fe diagonal bond angle is used for systematics.

• Our model suggests rather using bond lengths and the Fe-As-Fe nearest neighbor bond angle

Page 43: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Effective interaction plotted vs log Tc

Page 44: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Material design and limitations

Page 45: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Summary

• Ionic CT and MH systems behave very differently at interfaces and surfaces (self doping?)

• Electronic polaron effects for narrow band overlayers on highly polarizable systems

• Non uniform polarizability leads to strong reduction of U and peculiar nearest neighbor interactions which could be either repulsive or attractive

• DESIGN (ARTIFICIAL) STRUCTURES USING HIGHLY POLARIZABLE ATOMS OR SMALL MOLECULES ALTERNATING WITH NARROW BAND METAL FILM FOR HIGHER Tc’s?

Page 46: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

NiO bulk• Rock salt structure• AFM insulator (Exp. Gap ~4eV)

O2-: 2s2 2p6

Ni2+: 3d8

LSDA LSDA+U

-10 -8 -6 -4 -2 0 2 4

4

2

0

Spin Down

Energy (eV)

0

2

4

Spin Up

Ni 3d

DO

S (

sta

tes/

eV

ce

ll) 0

5

10

15

Total O 2p

-10 -8 -6 -4 -2 0 2 4 6

4

2

0

Spin Down

Energy (eV)

0

2

4

Spin Up

Ni 3d

DO

S (

sta

tes/

eV

ce

ll) 0

5

10

15

Total O 2p

U=8eV J=0.9eV

Page 47: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia
Page 48: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Some key papers on polar surfaces and interfaces

• R. Lacman, Colloq. Int. CNRS 152, 195 (1965)• The stability of ionic crystal surfaces

P.W. Tasker, J. Phys. C 12, 4977 (1979)• Reconstruction of NaCl surfaces

D. Wolf, PRL 68, 3315 (1992)• Adsorption on Ordered Surfaces of Ionic solids

ed. H. J. Freund and E. Umbach, Springer Series in Surface Science, Springer, Berlin, 1993, vol. 33.

• Electronic reconstruction of polar surfaces in K3C60: R. Hesper et al., PRB 62, 16046 (2000)

• High mobility electron gas at LaAlO3 /SrTiO3 interface A. Ohtomo and H.Y. Hwang, Nature 427, 423 (2004)

Page 49: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

What does Co do? Dope???

Page 50: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Some other experimental results

• Neutron scattering yields ordered moments ranging from very small to 0.9 µ B

• Magnetic ordering is antiferromagnetic SDW like 1D ferromagnetic chains coupled antiferromagnetically

• Neutron inelastic scattering yields a large spin wave velocity i.e. large J but also a large spin wave gap of 10 meV and the spin waves are heavily damped above about 30 meV. “ Stoner Continuum?”

Page 51: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Singh et al Fermi surface LaFeAsO LDA

Page 52: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Ionic Materials can exhibit Polar surfaces and interfaces and They HAVE

TO reconstruct

Page 53: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Polar (111) Surfaces of MgO

2-

2+

Finite slab of charged planes

ΔV=58 Volt per double layer!

2- 2+

Page 54: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Types of reconstruction

Electronic Ionic Chemical

K3C60: R. Hesper et al., Phys. Rev. B 62, 16046 (2000).

+Q

-Q

+Q

-Q

+Q/2

+Q/2

-Q/2

-Q

+Q

-Q

NiO(111): D. Cappus et al., Surf. Sci.337, 268 (1995).

+Q

-Q

+Q

-Q

Rearrangement ofelectrons

Rearrangement ofIons faceting

K-depositon: M.A. Hossain et al., Nat.

Phys.4, 527 (2008).NiO(111): D. Cappus et al., Surf. Sci.337, 268 (1995).

Vacancies or add Ions (K+) or OH-

Page 55: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Interesting materials in which electronic reconstruction can strongly alter properties and which can be used for interface engineering to develop new devices with exotic properties.

Super Conductors: YBa2Cu3O6+δ

(Cu) 1+

(BaO) 0

(CuO2) 2-

(Y) 3+

(CuO2 ) 2-

(BaO) 0

(Cu) 1+

Perovskites: LaTMO3 (Ti,V,Mn ...)Spin, charge and orbital ordering

LaOFeAs

1+

1-

1+

Simple oxides:SrO, NiO, MnO ...

(111) surface

(001) surface in trivalent compounds

(110) surface

Page 56: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

TiOCl

(Cl) 1-

(TiO)2 2+

(Cl) 1-

TiS2

(Ti) 4+

(S) 2-

(S) 2-

Examples of non polar layer structures

Page 57: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

ad atom stabilization of Polar surfaces Important also for growth

• NiO grown by MBE is covered by a monolayer of OH - =1/2 the charge of the Ni2+ layer underneath and therefore stable

• MnS single crystals grown with vapor transport methods yield large crystals with 111 facets???? Covered by a single layer of I- and the crystal grows underneath. Like a surfactant

• ½ Ba missing on the surface of BaFe2As2• K+ ad ions on YBCO • Use add large ions as surfactants during growth

of polar surface systems

Page 58: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Octapolar reconstruction of MgO (111) slab

Top view Side view

Effective surface layer charge = +2(3/4) -2(1/4) = +1

Page 59: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

MgO O

-1+2-2

Mg MgO

+1 +2-2

Transfer one electron from O layer to Mg layer

ELECTRONIC RECONSTRUCTION

Page 60: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

LSDA Band Structure of CaO (111) Slab terminated with Ca and O

-10

-5

0

5

10

Γ K M Γ A L H A

Ene

rgy

(eV

)

-10

-5

0

5

10

Γ K M Γ A L H A

Spin Up Spin Down

12

-4

-2

0

2

4

6

8

10

L X W L K

Ene

rgy

(eV

) Note:Bulk material (no surface)is an insulator

But surface is metallic! And ferromagnetic

Ca 4s

O 2p

Page 61: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

111 surface of K3C60 and its polar nature.

Hesper et al PRB 62, 16046 2000 coined the phrase electronic Reconstruction for K3C60 surfaces

several terminations are possible and at least 2 different Photoemission spectra at the surface have been observed corresponding to C60 1.5-,2.5-

Page 62: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Hossain et al., Nature Physics 4, 527 (2008)

Page 63: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Hossain et al., Nature Physics 4, 527 (2008)

Page 64: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Electronic Reconstruction

• Energetically favourable in ionic systems with small band gaps and in systems with multivalent components ( Ti,V,C60,Ce,Eu ----)

Page 65: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Maanhart et al MRS buletin review

Page 66: Electronic Polarons in Narrow band Semiconductors and Metals G.A.Sawatzky University of British Columbia

Influence of the La AlO3 thickness on a SrTiO3 substrate on the conductivity

S.Thiel et al Science 313, 1942 (2006)