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Emerging Physical UnclonableFunctions With Nanotechnology
Group3 :周宣呈、周琪、黃筱喻、李承哲
Outline
• State-of-art PUF challenge and advantages of nanotechnology
• How PUF works and its vulnerability
• Development and application of nanotechnology PUF
• Possible application of PUF
State-of-art PUF challenge and advantages of nanotechnology
Definition
A Physical Random Function or Physical Unclonable Function (PUF) is a function that is:• Based on a physical system
• Easy to evaluate (using the physical system)
• Its output looks like a random function
• Unpredictable even for an attacker with physical access
Definition
• Most widely used definition:
• Nanoscience is the study of phenomena and manipulation of materials at atomic, molecular and macromolecular scales, where properties differ significantly from those at a larger scale.
• Nanotechnologies are the design, characterisation, production and application of structures, devices and systems by controlling shape and size at nanometre scale.
Millimetre scale (1 m = 1000 mm)ant and flea
• 5 mm
• 3mm
• 1mm
http://www.nation
alinsectweek.co.u
k/resources/buzz
_ant_06.pdf
www.nanotec.org.uk/report/chapter2.pdf
http://commons.wiki
media.org/wiki/File:D
rosophila_melanoga
ster_-
_front_(aka).jpg
Micrometre scale (1 mm = 1000 µm)eye of a fruit fly and a red blood cell
• 400 µm • 8 µm
http://www.molbio1.princeton.edu/facility/confocal/sem/imagelist1.html
www.mta.ca/dmf/blood.htm
Nanometre scale (1 µm = 1000 nm) – viruses & DNA
• 50 – 100 nm • 2 nm
http://www.gala-instrumente.de/images/deben_CCD_DNA.jpg
www.answers.com/topic/virus
Nanostructures
• Nanoparticles
Nanostructures
• Fullerenes – e.g. carbon nanotubes and buckyballs
Nanostructures
• Quantum dots
http://www.nist.gov/public_affairs/update/quantumdots.htm
http://www.nanopicoftheday.org/2003Pics/QDRainbow.htm
Nanostructures
• Non-carbon nanotubes
• Nanowires
• Biopolymers
• Dendrimers
http://nano.med.umich.edu/projects/dendrimers.html
http://www.nist.gov/public_affairs/05nano_image_gallery.htm
Nanotechnology
What make technology at the nanoscale different from technology at the macroscale?
Volume to surface area ratio
• As objects get smaller they have a much greater surface area to volume ratio
2 cm cube has
a surface area
of 24 cm2 and a
volume of 8 cm3
(ratio = 3:1)
10 cm cube has a
surface area of 600
cm2 and a volume of
1000 cm3 (ratio =
0.6:1)
Physical properties
• At very small sizes physical properties (magnetic, electric and optical) of materials can change dramatically.
http://www.omicron.de/index2.html?/re
sults/spin_polarized_tunneling_induce
d_luminescence_microcopy_sp_tilm/in
dex.html~Omicron
Applications
• Microchips
•http://ion.asu.edu/cool66_IC2/cool66_ic_thumb.htm
How PUF works and its vulnerability
CARBON-NANOTUBE FIELD-EFFECT TRANSISTORS (CNFET) BASED PUF
• Entropy• chirality, which denes the type metallic or semiconducting
• diameter
• growth density
• alignment
• doping concentration
CNFET based PUF design (CNPUF) operation
• CN as gate voltage of the two CNFET in PE
• Because of the different conductance, I1 is different from I2
• Compare the two branch of current to get the response
I2
I1
• Only theoretical work• Performance highly relies on the offset of the comparator
Offset
Phase change memory (PCRAM) Based PUF
time
(Low resistance)(High resistance)
• Entropy• Given the same SET/RESET time, the resistance of different cell are random
• Given the same SET/RESET time, the resistance of the same cell is not the same
STT-MRAM-BASED PUFS
• Current direct into free layer change the orientation
• Parallel state (low resistance) and anti-parallel state (high resistance)
• Entropy• Different program voltage such that cells change states
• Different resistance of different cell in AP/P state
STT-MRAM-BASED PUFS
• Poor efficiency if VPUF is not well
• bit error rate requires majority voting mechanism to solved
Reset all cells
Apply VPUF
Cell state determination
Gray bits White bitsBlack bits
01 discard
STT-MRAM-BASED PUFS
WL[0] WL[2] WL[3]WL[1] WL[4] WL[5]
SL
BL
• Reset all cells to AP state
• Compare the resistance of the chosen cell with the averaged resistance of all the other cell
Small difference -> hard to compare
STT-MRAM-BASED PUFS
Cell 1 Cell 2
Reset/SET two cellsmake both at AP or P state
Compare the two resistance
Lower resistance
Higher resistance
Write to PWrite to APBetter sense margin
Small difference-> hard to compare
ReRAM based PUF
Low resistance state (LRS) high resistance state (HRS)
• Generally wider distribution (of the same state)than MRAM
• Larger difference between high low resistance
• Cycle to cycle variation -> reconfigurable
RRAM based arbiter PUF
• Compared the Write time difference
• The selected one is being written • Compared the two column with
each branch resistance are the average of the total cells on that column
• Which branch first reach the threshold of the arbiter
• Large power consumption for each response to be generated
0
1
1
0
Cells that are being written
Active wordline
RRAM based arbiter PUF
• Reset first -> apply Vpulse(necessarily longer than the duration of VCE)
• VCE ends, Vup and Vdown compare
Vup
Vdown
• Arbiter enters the metastable state if the delay of the two path are too close
• Cycle to cycle resistance variation cause reliability issue
Development and application of nanotechnology PUF
PCM PUF pros and cons
Memristor PUF considerations
Xbar PUF
SHIC CNFET PCM STT Memristor
PCM pros and cons
• Programming variability, resistance drifts, read disturb, thermal cross-talk, and RTN noise in PCM devices cause reliability problems for memory implementations but can be utilized for hardware security applications.
• PCM PUF has Implicit manufacturer variability, same as SRAM PUF, while optical PUF doesn’t.
• Only two PUF are considered mathematically unclonable, PCM PUF and optical PUF.
• Most research efforts have focused on improving memory performance, while few reports have discussed the intentional use of variability for hardware security.
Electroforming
• Electroforming is a metal forming process that forms parts through electrodeposition on a model, and the process involves high current through very clean water.
• In recent years, due to its ability to replicate a mandrel surface very precisely with practically no loss of fidelity, electroforming has taken on new importance in the fabrication of micro and nano-scale metallic devices.
Memristors with electroforming
For the transition oxide memristors. , the electroforming process is a necessary step involving high voltages in enabling reproducible ionic conduction that modulates the device resistance.
Memristors without electroforming
The multiferroic YMO memristorswitches from the HRS to LRS by forming a large number of charged vortices.
The switching mechanism of BFO memristor involves two types of impurities in thin film: Ti atoms (blue circles) and oxygen vacancies that are intrinsically formed during fabrication (red circles).
Future work
• The relationship between low-level behavior of EF-free memristors and the application-level performance.
• Device's operation under natural stress (in harsh environment or under aging).
• Device's operation under malicious attacks (e.g., strong laser or electromagnetic pulses).
First Xbar PUF
• Xbar PUF's primary entropy source is the minimum time it takes for memristors to SET during a write operation.
• Xbar PUF is somewhat a reimagining of the APUF where memristors are essentially used in place of switch boxes.
• Xbar PUF decreases the transistor counts a lot compare with APUF, but its reliability still needs to be tested across a wider range of operating parameters from real memristors.
Follow-up development
• Internet of things (IoT) introduces new security concerns such as encryption and authentication are often resource hungry, solutions are needed that provide reasonable levels of security with minimal area and power consumption.
• It has been found that although a basic Xbar PUF structure is prone to modeling attacks like an APUF, by tweaking this Xbar PUF circuit, only roughly 58% accuracy using machine-learning models may be achieved.
Summary
• PUF designs provide a number of unique properties such as abundance of process variations, bidirectionality, C2C variations and formation process
• Major limitations of currently proposed PUF designs that are based on emerging nanoelelctronics
• PUF designs with nanotechnology will secure future memory and circuit applications with low energy, area overhead, and unique device level properties.
Possible application of PUF
Volatile PUF to protect nonvolatile PUF
scramble
Vo
lati
le P
UF
Non-volatile PUF
challenge R1/C2 a
k
3
0
b6 R2
PUF as process variation measurement
Distribution of entropy
The key to perform a PUF is to find the good entropy and digitalized it
No matter what kind of emerging device needs to have good electrical characteristic to be put into use
No matter what physical mechanism, material, process formula, produce step, of the device will eventually converge to electrical characteristic
PUF as process variation measurement
Reset all cells
Apply VPUF
Cell state determination
Gray bits White bitsBlack bits
01 discard
VPUF
Key parameter to improveWhich may depends on specific process details
formula A
formula B
Mostly set under VPUF if formula A is use
Ref
• https://www.techspot.com/news/65990-phase-change-memory-breakthrough-could-make-1000x-faster.html
• https://www.google.com/url?sa=i&url=https%3A%2F%2Fwww.researchgate.net%2Ffigure%2FSchematic-representation-of-the-set-reset-operations-in-the-ReRAM-device-a-In-the-low_fig3_327735694&psig=AOvVaw1mE9_NqllqSgOv4832qfFO&ust=1578650276606000&source=images&cd=vfe&ved=0CAIQjRxqFwoTCKiett2g9uYCFQAAAAAdAAAAABAV
• https://ieeexplore.ieee.org/abstract/document/8854394
• https://link.springer.com/chapter/10.1007/978-981-13-8379-3_3
• http://seneca.eecs.utk.edu/publication/Mesbah-2017-JETC.pdf
• https://ieeexplore.ieee.org/abstract/document/8482515
• http://iopscience.iop.org/13474065/56/4S/04CN03/downloadHRFigure/figure/SS16029fig01b
• https://d3i71xaburhd42.cloudfront.net/21d3d0f1a2b7a2a429f95d5591e62f5332fee8af/2-Figure1-1.png
• https://cn.comsol.com/paper/image/64392/big.png