EPILOGUE

Executive Summaries on Main Topics

by (in alphabetic order)

Edoardo Bemporad, Antonio Cascalheira, Salvita Fernandes, Stefano Loreti,Dave Pankhurst and Seth Taylor

Topic # 1. Convergent Beam(to be sung to the tune of"Let it be" by Beatles)

When I find myself in times of learning,Mr Humphreys comes to mespeaking about Convergent Beam.

Let it Beam, Let it Beam, Let it Beam!Symmetries and strain to measure,have you got a good technique?Speaking words of wisdom,

Let it Beam,Let it Beam, Let it Beam, Let it Beam,Speaking about Convergent Beam.Let it Beam!!!

Topic # 2. EELS(to be sung to the tune of"HeyJude" by Beatles)

Hey EELS,I can't believeall the things thatyou can do better;rememberyou really measure all thingsand if that don't workwith Botton it's better!

Better, better, better, better, better, better, (SCREAM!!!)na, na, na, na na na na, na na na na, Hey EELS!!!

473

D.G. Rickerby et al. (eds.).Impact ofElectron and Scanning Probe Microscopy on Materials Research. 473-475.© 1999 Kluwer Academic Publishers.

474

Topic # 3. Student's Oral Presentations(to be sung to the tune of "Help!" by Beat/es)

And comes the timewhen all the students speak,ten minutes timethat must be the Peak!Stick to your time,don't go on too long.Ten minutes timeto get across your song.Help me ifyou can, he doesn't stop,Mr Chairman ifyou please, she doesn't stop;turn the lights out, shut the door.Could you please, please help me,help me, help me (eeeeeeee!)

Topic # 4. School Support(to be sung to the tune of"Yellow Submarine" by Beat/es)

Do you have a problem,you need some new viewgraphs,you need your flight confirmed,you need to send a fax?There's a lady in S. Rocco Office room,she'll fix it all for youand make the sky turn blue!All we need is a Salerno helping hand, Salerno helping hand!!!(please repeat - at least - twice!)

Topic # 5. High Resolution Imaging(to be sung to the tune of''Revo/ution'' by Beat/es)

You say you want high resolution,well you know,Pennycook's your man!What's the bonding contribution,well you know,you'd better do another scan!The interfacial constitution,nobody knows,Jim Howe as got a plan!What's the ferrite distributionthat steel will corrode?G.T. will take a stand!Chaos when it comes to electron microscopy,no one is better at imaging, anyhow!

Your contrast gonna be all white!Your contrast gonna be all white!Your contrast gonna be all white!

475

SUBJECT INDEX(N =foot notes)

y-alumina support, 170, 171Abbe theory, 162ab-initio methods, 266absorption coefficient, 182

process, 267abstract matrices, 319accelerated corrosion tests, 30adatoms, 347, 349adhesive forces (pull-ofi), 352analytical electron microscopy (AEM), 21AFM contrast mechanism, 346AFM,452, 454

organic-inorganic interaction, 452collagen,452calcium phosphate, 452

Ag,144AglMn304, 144aggregation, 438Airy disc, 162, 165, 166, 171Al ~.3 edges, 269Al20 3,112Al-Ag alloy, 65, 91Al-Li alloys, 7, 14alloy design, 7alloy design for aircraft, 11Al-Ni-Co decagonal quasicrystal, 168AlN, 21, 292alumina-zirconia nanocomposite, 56aluminum alloys, 7amorphous alloys, 168

crystal interface, 195amorphous phases, 31amplification, 415, 420421

determination, 418theory, 421, 422

amplitude contrast, 16detection, 459

analytical sensitivity, 201angle-resolved depth profiling, 318

XPS,302anions, 19anisotropy, 276annular dark field images (ADF), 209

477

annular detector, 161, 166high angle, 166

anodic boundary, 260antibonding states, 236, 256, 258,

259antiphase domain boundary (APB),

12aperture fimction, 172, 183aperture-limited environmental zone,

389artifacts, 302, 309, 351

interference, 351tip, 351

atom probe FIM, 10atomic concentration, 313atomic force microscopy (AFM), see also

scanning probe microscopy, 346,452,454

atomic number contrast (see z-eontrast)resolution spectroscopy, 193

atomic resolution, 19,345atomic resolution microscope, 19atomistic calculations, 138Auger

effect, 305energy shift, 305escape depth, 315

Auger electron spectroscopy (AES)301,305,308background, 315differentiated spectrum, 315direct spectrum, 315electron binding energy, 309intensity, 315nomenclature, 305peak-to-peak value, 315peak area, 315, 316, 321peak height, 315quantification, 314spatial resolution, 306transitions, 241sensitivity factor, 314, 315escape depth, 305, 315

D.G. Rickerby et al. (eds.).Impact ofElectron and Scanning Probe Microscopy on Materials Research. 477-489.© 1999 Kluwer Academic Publishers.

478

AES (continued)kinetic energy, 305, 308

austenitic stainless steels, 14

background, Shirley-type, 320backscattered electrons (BSE),

306,415,417,426,463factor, 315

backscattered emission, 416yield, 369

bandgapdirect, 237, 245indirect (non-vertical), 237observations, 246

Bayes theorem, 191beam damage, 428beam gas lengths, 394beam sensitive samples, 407bent atomic column, 187Bethe cross section, 371

formula, 370binding energy, elemental, 313biological sciences, 409biology, 455biomaterials, 446biomedical components, 445

devices, 445blister formation, 129, 131, 133, 134Bloch states, 166, 182, 184, 186

type walls, 468waves, 333

BN-coated SiC, 21bonding, 21, 136,290

energy, 259states, 236, 256,258,259

bone, 447Born approximation, 173boundaries, 464Bragg angle, 165, 166brasses, 14Brillouin zone boundary, 181,237Burgers circuit, 335

vector, 142,327determination, 335

calorimetric measurements, 353capacitance detector, 352capillary forces, 352carbon contamination, 308, 315carbon equivalent, 31carbon nanotubes, 169cascade amplification process, 417cascade amplification, 398catalists, 301, 303,319catalyst cluster, 170catalyst, bimetallic cantilever, 353catalytic reactions, 353cathodic boundary, 260CCD camera, 86, 89, 91cellular materials, 440cement, 434ceramic glass, 18ceramics, 21, 31, 34,446cerium oxides, 309cermets,47,456,458,463channeling approximation, 186channeltron, 363characterization, 2charge coupled devices (CCD), 211, 214charge density maps, 327charge neutralization, 403, 412charging, 115, 126, 309chemical bonding, 305chemical effects, 315chemical forces, short range, 347, 350chemical ordering, 168chemical shift, 216, 217chromatic aberration, 193,201,368CoAl, 272,284coating, stub, 405cobalt, 457

film, 462coercivity, 36, 457coherence length, 165

longitudinal, 182transverse, 179

coherence volume, longitudinal, 181coherent images, 161, 165, 167

scattering, 188

coherent interfaces, 65with different composition, 65with no change in composition,

66coherent potential approximation (CPA),

281cold field-emission source, 362collection efficiency, 372collector aperture, 165collision cross section, 416Comet aircraft disasters, 4

jet aircraft, 7common band behaviour, 286complementary techniques, 466composition contrast, 374compositional analysis, 21concentration, atomic, 313concrete, 26Co-Ni martensite interface, 66contact angles, 437

diameter, 342hole, 372potential, 350radius, 343, 345

contaminants, 342contamination, 78, 328

rate, 380contrast, 177, 194,415

in HRTEM images, 72, 76parameters affecting the, 76

contrast in MFM imagesbright, 468dark, 468

contrast in the SEM, 455reversed, 77

contrast transfer function (CfF), 167, 171for incoherent imaging, 177

phase factor of, 172contrast, in dynamic force microscopy,

346convergent beam diffraction (CBD), 19,

21,325energy filtered, 327large angle (LACBED), 335

convergent beam imaging (CBIM), 334cooling, specimen, 182

479

copper, 331core hole, 245, 276

contribution of a, 276correlation,463,466,471correlative microscopy, 455

probing, 455, 456corrosion, 14,26,27corrugation height, 346Coster-Kronig transition, 380Coulomb interaction, 136covalency, 271covalent bonding, 256covalent compound, 293cracks, 119cross section, incoherent scattering, 188cross section, 232

Bohr formula, 219, 220differential, 219double differential, 226Mott formula, 219x-ray excitation, 237

cross-tie, 466-468, 471crystal field splitting, 216crystal structure, 21Cu,144Cu/Mn0,145current flow equation, 369cyclic stress testing, 412

Danilatos, 387Debye-Waller factor, 166, 188, 329de-cohesion, 135deconvolution, 303defects, 342

analysis, 12structure, 282

defocus, 171, 172, 177, 190delayed maximum, 89densification, 31, 112, 114densification, fUrnace, 112

laser, 110density of states (DOS), 227, 235, 237,

239,241,242,246,268,272,280-282, 287joint (JDOS), 238, 242

480

dentin, 447,448depth profiling, 302,308,313,315,316,

319,322using ion sputtering, 316sputtering rates, 317

depth resolution, 318, 377detectorcry~icing,381

detectorfiInction, 174, 175developments of TEM, 3diagnostic events, 2

tool, 2diagnostics, 25diametralline profiles, 372diamond, 21dielectric function, 222differential pumping, 390diffraction, 2diffraction contrast, 12, 335

dynamical, 182diffuse dark-field, 31diffusion coefficient, 310dimers, 170, 196dipoleapproxnnation, 226, 245dislocated laths, 7dislocation cores, 162,202dislocations, 14, 16,67, 335dispersion, spectrometer, 90displacement damage, 18displacement vectors by amplitude

contrast, 12dissimilar materials, 136domain walls, 22, 466

width, 468doping effect, 280dose rate per pixel, 253dual-phase steels (DFM), 28, 30dumbbells, 177,201dynamic dehydration, 438

hydration, 434imaging, 407magnetic force image, 462object fiInction, 167, 183, 185

dynamical theory of electron diffraction,329,330,332,335

EDS analysis, 377,463EDS detector

crystal icing, 381efficiency, 381, 383performance, 381, 383windowless, 381

EELS, 86, 265effective L shell absorption coefficient,

379effective mass, 236effective pair potential, 138, 153efficiency factor method, 232EFM phase contrast, 459Einstein model, 180, 188elastic energies, 141

scattering, 165electric force microscopy (EFM), 455,

458,461,463resolution, 461

electrical trasport properties, 2D, 471electron beam lithography, 359

energy loss spectrometry, 209,231,251energy loss spectroscopy (EELS)21,41, 161microscopy, 1skirt, 392, 397sources, 368spectroscopy for chemicalanaly~s(ESCA),239,308

transport step, 432wavevector, 171

electronic noses, 355electronic properties, 432

structure calculation, 265electron-optical column, 359electrostatic interaction, 350

forces, long-range, 350elemental composition maps, 21

detection limit, 302imaging, 21

emulsion, oil-in-water, 431enamel, 447, 449energy dispersive x-ray spectra (EDX, or

EDS),215, 231, 254,400-401energy factor, 141energy filtered images, 23

filtering, 21, 265, 329

energy10sslUnes,310energy loss near edge structure (ELNES)

209,216,242,243,246,256energy loss, dielectric theory, 222

transition-rate theory, 225energy product, 36energy transfer, 219enthalpy changes determination, 355environmental SE detector, 397

SEM (see ESEM), 239equal-channel angular (ECA) pressUng,

50ESCA, 239, 308escaped depth, sputtered particles, 311ESD, 215, 231, 254, 400-401ESEM applications, 407

history, 397resolution, 397, 402

ESEM,387,415,445,454Un dental research, 449

euteetoid carbides, 28Everthart-Thomley detector, 398,402Ewald sphere, 179, 182excitonic effects, 290excitons, 245, 251extended energy loss fine structure

(EXELFS),209,216,242,245

extUnction distance, 12, 77, 186, 188

failure analysis, 4, 412Faraday cage, 418-419fatigue, 33

analysis, 412Fe3 AI, 271FeAI,270FEGTEM, 325Fe-Nd-B,36Fenni level, 236, 239, 240, 270, 273 280field atom probe, 7field emission guns (FEGs), 21, 209, 211,

368field emitters, 306filtered energy loss electrons, 21flood gun, 309, 314

481

fluorescence yields, 380fractional difference, 257, 259fractography,4fracture, 34

mechanics, 4toughness, 6, 33

FREDUL (frequency shift differencebetween upper and lower terrace)

351frequency modulation, 459

constant, 349shift, 346, 349, 350

Fresnel mode, 37freitUng, 311friction coefficient, 342fullerene-reinforced nanocomposites,

41,53

GaAs,18gas amplification, 397-398gas effect on the beam, 393gas path lengths, 393-394

phase condensation, 319scatteoog, 392

gas-electron Unteraction, 391, 393, 415gaseous secondary electron detector

(GSED), 400-401gas-solid reactions, 407glassy phases, 31graUn boundaries, 11, 188, 194, 196,202,

260,261contamUnants,306engUneerUng, 31films, 33Unterfaces, 34migration, 124impurity-induced, 197

grain boundaryextrUnsic facets, 41UntrUnsic facets, 41sliding, 46

graphite, 21Gray, 253GuUnier-Preston (GP) zone, 65, 67

482

Hall-Petch effect, 42heating holders, 90, 91, 409helium, 399, 424, 426Hertzian deformation, 343heterogenous microstmctures, 4, 7, 11heterophase transformation interfaces

63,64,71atomic stmcture determination,64composition determination, 64

high angle scattered electrons, 174high order bright-field, 12high resolution, 18,36, 116

imaging, 31lattice images, 14Lorentz imaging, 36-37,39

high resolution scanning electronmicroscopy (HRSEM), 41, 374

high resolution transmission electronmicroscopy (HRTEM), 12,41,63,135imaging, 93in situ heating experiments, 93

high strength wires, 31high voltage microscopy, 11higher-order Laue zone (HOLZ) lines,

326,329,332high-temperature superconductor, 327historic developments in e. m., 2HOBF (high order bright field) conditions,

18hole concentration, mapping of, 195hybridisation, 270, 271, 278, 310hydrogen, 302, 311

diffusion, 90storage, 47, 301

hydrogenic approximation, 194

ideal hard magnet, 36image contrast, 175,202

efficiency, 166formation, 415intensity, 184simulation, 367

imaging, 2of live specimens, 407of wet specimens, 407

impact parameter, 218, 219, 232impurities, 335impurity atoms, 187, 193,202in situ experiments, 11, 412

heating in HRTEM, 93-103incoherence, transverse, 167, 181incoherent imaging, 161,

contrast, 166, 177contrast transfer function, 177in light optics, 161, 162, 164thick crystals, 166thick crystals, dynamicaleffects, 182thick weakly scattering objects,179thin weakly scattering objects173with electrons, 164-16

incoherent interface, 69indirect transitions, 245individual atom reactions, 355inelastic collisions, 415, 416, 424inelastically scattered electrons, 327inert gas-condensation, 48information from TEM/AEM, 2, 4instrumental resolution, 19insulating materials, 308, 309insulator, low loss spectrum, 216integrated microstmctures, 31interaction constant, 174

distance, 352parameter, 139

interactions, elastic coherent, 2elastic incoherent, 2

interactions, inelastic, 2intercolumn incoherence, 181interface analysis, 78

Pd3Si,78interface phenomena, 135

science and engineering, 5interfaces, 19,26,33,63,135, 162,334

coherent, 137"disintegrated", 26

interfaces (continued)edge-on,95energy, 140face-onincoherent, 137"integrated", 26semi-eoherent, 137

interfacial phenomena, 3intergranular weakness, 260interlath carbides, 31intermetallic alloys, 266internal electric field, 378internal oxidation, 145interphase carbides, 31intra-lath austenite films, 30inversion domain boundary, 200inversion problem, 161ionic materials, 290ionisation, 416isotopes, 302, 310iterative tetrahedron, 1, 26

joining, 31, 34jump ratio, 90,91

K, L, M - edges, 209labelling, 216

kinematical scattering, 179kinematical theory of electron diffraction

329,335kinks,98,99Korringa-Kohn-Rostoker method, 269Kramers- Kronig analysis, 227

transformation (KK), 209, 225

landing gear, 7laser, 80 W, CW-C02, 119lateral force imaging, 353latex, 438lath martensite, 30lattice imaging, 17,342lattice parameter measurements, 326, 333,

334

483

ledges motion, 98-102lettered TEM grids, 458lift mode, 459, 462light element materials, 22linear muffin tin orbital method, 269linearised augmented plane wave

(LAPW),269liquid phase sintering, 31local density approximation (LOA), 276

failure of, 291local density of states (LOOS), 346local distortion, 334

strains,333,334localised spectrometry, 251longitudinal coherence volume, 181Lorentz force, 462Lorentz microscopy, 22, 458, 461-463,

466loss function, 268low carbon steels, 25low-energy scanning electron microscope

359resolution, 365

magnetic alloys, 25domains,36field gradients, 462

magnetic force microscopy (MFM), 455,458,461,466contrast, 468image, 466resolution, 467, 471

magnetic materials, 36recording media, 457-458magnetic sector spectrometer, 211

detective quantum efficiency(DQE), 213, 215dispersion, 211dynamic range, 213figure of merit, 211resolution, 211

magnetic sector, 313magnetic structure, 22magnetisation distribution, 3D, 471

reversal,457

484

magnetisationripples, 468, 469, 471martensite, 7martensitic steels, 6martensitic transfonnation, 7mass changes, 355mass spectrometers, 310,313,411materials

bioactive, 447bioinert, 447dental, 445medical, 445osseointegrating,447resorbable, 447

materials research, 1science, 25

matrix effect, 315matrix element, 268maximum entropy method, 190, 192mean free path, 221

Ferrellfonnula,222mean range, 376mechanical tests, 439metal-insulator mixture, 456metal-oxide, 135

interface, 136MgO,290microalloyed steels, 28microanalyses, 2, 21microanalysis by EELS, 231, 247microcolumn, 359microinjectors, 413microlens, 361micro-liquid injection, 407micromanipulator, 413microstructural design, 25

tailoring, 36microstructure analysis, 30 Imicrostructure properties correlations,

42misfit dislocations, 137, 189Mn30 4,144MnO,144modelling, 456molecular orbital, 269moments, method of, 259Monte Carlo modelling, 370, 422

simulation, 367, 369, 370,372,375,377,416

moss bud, 409Mott elastic cross section, 370mullite,19multicolumn, 359multilayer films, 377

structures, 374multiple scattering, 243, 269multiplet splitting, 310

n-alkanes, phase transitions, 355nanocomposrtes, 301nano-grained materials, 457nano-sized ceramics, 110nanostructure,36nanostructured materials, 21, 41, 42

processing methods, 41synthesis, 41, 48

nanotubes, carbon, 169National Center for Electron Microscopy,(NCEM), 24, 39natural fibers, 413natural lifetime, peak width, 243near edge structure, 265, 279Neel type walls, 468Ni, 272, 273NixAI(l.x), 280NhAl, 260, 273NiAl, 272, 273NiAl3, 273, 275NiO,290Nobel Prize, 2non-conductive samples, 407non-crystalline materials, 18non-dispersive states, 183, 184non-stoichiometry effect, 280nuclear power safety, 4

object function, 174, 175, 177dynamical, 185inelastic, 193retrieval, 190

objective lens, 18transfer function, 171

oligoscattering regime, 416one-dimensional mismatch, 146orbital, molecular, 259order, 14ordering, 14, 198oxide, amorphous layer, 85oxides, conducting, 199

paints, 438parallel topotacy, 151peak width, 309pearlite, 28Pearson ratio, 260Peierls barrier, 278Peltier effect stage, 408percolation, 456percolative conduction, 464permanent magnets, 36perovskites, 198phase detection, 459phase problem, 161, 163, 175

contrast images, 193in crystallography, 327,335

phase stability, 282phonon model, 180, 181

scattering, 167phonons, 182, 186, 188photodiode array, 211photoelectrons binding energy, 308photoresist, 372piezo creep, 352pitting corrosion, 28pixels, 89plants, 409plasmon energy, 215, 222

peaks, 225plucking mechanism (see Tomlinson),

341,342point groups, 326point/space symmetries, 21Poisson ratio, 343polarity of polar specimens, 327polymer strip, 412

485

precipitate free zones (PFZ), 7, 11pressure limiting aperture, 398primary electron trajectories, 377principal component analysis (peA),

319probe function, 191

intensity distribution, 172, 183profile, 177, 185, 190

size, 87projected potential, 72, 76,174,179,183pseudopotential technique, 269Pt, single atoIn, 170pull-offforce, 352

quadrupole lenses, 213, 214quality factor, 346Nquenched tempered steels, 7radiation damage, 253

overcoming, 253

Rayleigh's condenser, 166, 167R~Sh~ phase, 33real-space crystallography, 19real-time image simulations, 99rebars,26reciprocal lattice, 19reciprocity, 165, 176recrystalization, 51recrystallized silicon, 411reflecting sphere, 19refractory ceramics, 25relative permittivity, 223remanence, 36, 457replication, 4residual gas analysis, 411resolution, 163,173-174,176,178,190,

365atomic, 166, 194Rayleigh criterion, 163, 165,

166, 178Scherzer limit, 161, 173, 177spatial, in EDX, 88

in EELS, 232-234, 243tests, 368

486

resolution, amu of a quadrupole, 313resonance frequency, 346retained austenite, 7, 9rigid band, 289rolling mill, 31Ru02, 456, 463, 464,Rutherford backscattering (RES), 242

elastic cross section, 370scattering, 185

scanning Auger microscopy (SAM),241

scanning electron microscopy (SEM),114, 126,367,463high resolution SEM, 41,109,374ultimate resolution, 368

scarming microscopy, 4scanning probe microscopy (SPM),

339,445,454artifacts, 351atomic resolution, 345contact AFM mode, 340

dynamic mode, 462tapping mode, 462, 463

dynamic STM mode, 341,347friction force microscopy (FFM),

341,342lateral force microscopy (LFM),

341lift mode, 459, 462multifunctional instrument, 346non-eontact (nc) AFM mode,

341,345scarming transmission electron

microscopy (STEM), 161, 164,209,247probe formation, 171

scarming tunneling microscopy (STM),242,340,359

scattering angle, 371Scherzer condition, 18

defocus, 72, 78Schottky field emission, 86, 87

screening factor, 370process, 267

second crossover energy, 369second neighbour interactions, 285secondary electrons (SE), 397, 404, 415,

417,426images, 375, 376yield,369

secondary ion mass spectroscopy (SIMS),242, 302, 310dynamic mode, 314

SIMS quantification, 316elemental sensitivity, 313, 316matrix effect, 316relative sensitivity factor, 316standards, 316static mode,314thickness resolution, 311

secondary neutral mass spectroscopy(SNMS),313

segregation energy, 196, 197selected area electron diffraction (SAD),

325semicoherent interface, 67semiconductor critical dimension, 371

devices, 333doping levels, 302

sensors, 353severe plastic deformation (SPD), 50shake-down emission, 320shake-up emission, 310shear forces, 342

modulus, effective, 343strength, 345

Si3N4,25creep, 33fatigue, 33oxidation, 33strength, 33

SiC, 21silicon nitride, 31silicon, 18,31,331,411simulated irnages,79, 80, 82, 84simultaneous co-deposition, 54single atoms, 170

single particle calculation, 268sintering, 31Si02, 112, 127site selectivity, 285skirt, 428Smo1uchowski smoothening, 349sol-gel method, 109, 110

processing, 59solid state precipitation reactions, 11solid-solid reaction, 407space groups, 326spatial difference method, 252, 253, 255spatial frequency, 176, 183specimen contamination, 380

damage, 76, 166,328preparation, 457-458standards, 303, 315thickness, 25

spectrometry, localised, 251spectroscopic elemental analyses, 21spectroscopy, atomic resolution, 193spectrum-line method, 251spherical aberration, 72, 171, 172, 200,

368spin coating, 112, 113spinodal ordering, 14, 17spores, 409spot size, 116spray conversion processing, 50spring constant, 346, 352sputtering rates, 317

region, 317yie1d,318

square band model, 259standards, specimen, 303, 315static magnetic force image, 462steels, 7, 26step edges, 351stereostiction technology, 110, IIIstick-slip, 341, 342

atomic-scale or nano-, 3432d-, 345

stiffness, 343, 344stopping power, 220

Bethe-B1och formula, 220, 231strain contrast, 187

487

strained-1ayer-superlattices, 333stray magnetic field, 456, 462, 468

z-eomponent, 462, 467stress changes, 355

components, 140corrosion, 14intensity factor, 121

stresses electrical, 42magnetic, 42mechanical, 42thermal, 42

structure factor determination, 327, 335sudden approximation, 245superlattice, 12, 16surface analysis, 303

characterization techniques, 301chemistry, 301engineering, 135oxidation, 303

structure, 301surface force apparatus (SFA), 342surface ionization, 376

reactivity, 319roughness, 315

surface re1axion, 334effects, 326

symmetry, 326synchrotron, 243, 248, 265

target factor analysis (TFA), 303, 319temper embrittlement, 6,7

martensite embrittlement, 6, 7, 9tensile force kinetics, 407

stages, 412terraces, 91, 347,349,350, 351test sample, 457, 459theoretical modeling, atomic scale

characterization, 196thermal conductivity, 56

diffuse scattering, 186spraying, 59vibrations, 179, 180

thermometerscryogenic, 456piezoresistors, 456

488

thickness fringes, 180limits on resolution, 28nl~enlents,326,333,458

TiAl, 271TiC, 288TiCx, 283tinle of flight (TOp), 313tinle reversal synunetry, 165TiN, 288TiO,288Ti02, 112, 118tip preparation, 346NTitanic, 7Tonl1inson nlechanisnl (see plucking),

341,342torsion straining, 50torsional spring constant, 344toughness, 34transition nletals, 260, 261

alUnlinides, 266oxides, 289

transnlission electron nlicroscopy (TEMor CTEM), 1,63, 164,209,231,251energy filtering (EFfEM), 63,86,89,91

trinlers, 170twin topotacy, 151twinned plates, 7

ultra high vacuUnl (UHV), 211uncertainty principle, 234, 235undulations, 146unoccupied electronic states, 267unscreened Coulonlb potential, 246

vacancies, 280van der Waals forces, 346, 350

interaction, 236polarization, 257

Volterra-type dislocation, 138

water, 408, 433-435, 437water vapour, 397,399,415WC-Co,50weak bean1 dark field, 12, 16weak-phase object, 72, 77, 78welding, 31wetting, 413, 437white lines, 216, 217

structure, 216wide-band gap senliconductor, 433Wiener filter, 190wool fibers, 387

XL3S-FEG SEM, 117x-ray absorption fme structure (EXAFS),

216,241,242,243,245,246absorption near edge structure(EXANES), 216, 241, 242absorption spectroscopy (XAS),241,243,247,268depth distribution function, 376energy dispersive spectroscopy(EDS),41

fluorescence, 193,241,305photoelectron spectroscopy(XPS), 239, 241

x-ray energy dispersive spectroscopy(EDS, or EDX or EDXS), 41,63,86,87quantification, 315

backgrounds, 315elenlent concentration,

315nlatrix effect, 315peak area, 315, 316,321peak height, 315

resolution, 308

YBCO,228yield, secondary ion, 313

sputtered atoms, 313Young nlodulus, 343

Z+1 approximation, 276z-coherence, 179, 186, 188z-con~, 161, 188zinc ceramic glaze, 410zirconia monoclinic phase, 56

tetragonal phase, 56thermal barriers coatings (!'BC),

56yttria stabilized (YSZ), 57

Zr02,112

489