1

EUVL Mask

Technology

2011 international Workshop on EUV Lithography

1

EUVL R&D in Korea

Jinho AhnHanyang University, Seoul, Korea

14 June 2011

2

EUVL Mask

Technology

Who is interested in EUVL ?

Device manufacturer and material supplier

- Samsung : NAND Flash, DRAM, High-end Foundry

- Hynix: DRAM

- Dongjin Semichem: Photoresist

Academia and Research Institute

- Hanyang Univ.: strongest activity, owns EUVL beamline

- Seoul National University, SKKU, Inha Univ., POSTECH…..

- Pohang Accelerator Laboratory (PAL)

Tool maker

- Some small/med. size companies are developing EUV-related tools in collaboration with customers

3

EUVL Mask

Technology

NXE 3100 delivered …

Samsung (2010) and Hynix (2011) got their PPT from ASML with Cymer source

4

EUVL Mask

Technology

EBL

Etch

Cleaning

Inspection

Repair

Blank

Mask-related activities

5

EUVL Mask

Technology

Actinic Mask Inspection

Recently moved to Hanyang Univ. and installed

with stand-alone coherent source

Coherent Scattering Microscope at Pohang Synchrotron Facility,

6

EUVL Mask

Technology

Now, field spectrum measurable down to 13 nm node

From the aerial image, CD, contrast…… can be extracted

Reflectivity measurement error (3s) is 0.76(%)

And the resulting CD error is ~ 0.38%

Field Spectrum

Illumination condition

Aerial Image

Actinic CD measurement by CSM

7

EUVL Mask

Technology

Similar results between CSM and Mask SEM

Reproducibility is superior for CSM (∆CD: CSM < 0.2 nm, SEM < 1 nm)

Mask SEM CD CSM

CD Uniformity– Actinic vs. Non-actinic

8

EUVL Mask

Technology

HP88 nm mask pattern after 3 hr exposure with synchrotron

- Max. 15nm CD increase due to contamination

Mask CD Uniformityafter Exposure

CD Uniformity 3D Plot

3단계 2차년도 결과 발표 2010. 09. 14

CD measurement after Contamination

9

EUVL Mask

Technology

Carbon contamination removal recipe developed.

Cleaning_1 condition removes carbon on absorber but not on Ru capping

Cleaning_2 condition removes carbon on Ru as well as absorber.

A

B

C

CD increase according to the contamnation

Contaminated

Absorber

Ru capping

CD recovered due to carbon removal on

absorber

A

B

C

Cleaning 1

Absorber

Ru capping

Carbon removal even on the Ru capping area

Cleaning 2

Absorber

Ru capping

Mask Contamination Removal

10

EUVL Mask

Technology

Compared to TaBO, SiON exhibits improved performance

(Reflectivity at193 nm: 22.3% 8.8%)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

190 390 590 790 990

Ref

lect

ance

Wavelength (nm)

SION ARCTaBO ARC

New ARC for 193nm inspection

11

EUVL Mask

Technology

Substrate

40 pairs of Mo/Si ML

Phase Shift layer

Absorber

PhaseShift layer

Absorber

R2, Φ2 R1, Φ1Phase shift: |Φ1-Φ2| =

180˚

0%

20%

40%

60%

80%

100%

120%

140%

160%

180%

total thickness

(nm)

MEEF (nm) H-V bias (nm) image contrast

(%)

70 2.58 4.91 53.7

40.5

2.12

1.26

60.770

1.35 2.66

90.4

40.5

0.98

0.82

87.4conventional BIM (0.25NA) proposed PSM (0.25NA)

conventional BIM (0.32NA) proposed PSM (0.32NA)

Attenuated PSM

0%

10%

20%

30%

40%

50%

53.00%

55.00%

57.00%

59.00%

61.00%

0 5 10 15 20 25 30 35 40

Ref

lect

ivity

(%)

imag

e co

ntr

ast

%

Thickness of Mo phase shifter

0.25 NA

12

EUVL Mask

Technology

12.4 mJ/cm2

38.4nm13.2 mJ/cm2

35.7nm14.0 mJ/cm2

32.7nm14.8 mJ/cm2

30.6nm15.6 mJ/cm2

27.8nm

Bridge Bridge Collapse Collapse

DHE-1212 on UL, resin(P,F)=(3.2, 5.2), Quencher(P)=(-1.2)

DHE-1302 on UL, resin(P,F)=(2.8, 6.5), Quencher(P)=(4.1)

LER 3.8 nm

13 mJ/cm2

39.51 nm

Improved collapse & LER

14 mJ/cm2

34.44 nm15 mJ/cm2

31.19 nm16 mJ/cm2

28.42 nm17 mJ/cm2

25.29 nm18 mJ/cm2

22.39 nm19 mJ/cm2

Collapse

Resist exposure test with ADT

13

EUVL Mask

Technology

20mJ49.6 47.0 21mJ 40.4 22mJ 23mJ39.4 34.4 24mJ x19mJ53.0

17mJ

18mJ

61.415mJ11mJ 12mJ 13mJ 14mJ 16mJ111.9 98.1 90.1 79.0 69.1 65.3

17 mJ 60.9 nm

LER=2.8 nm

17 mJ 61.4 nm

LER=2.0 nm

Rinse Process

PAG-bound polymer (ArF Test)

14

EUVL Mask

TechnologyGreetings from Korea EUVL R&D Consortium

(EUVL Workshop on June 3-4, 2011 @ Jeju Island)