Evaluation Board Manual - fujitsu.com · 15 C6 Ceramic capacitor 630v 470pF, X7R, 1206 GCM31A7U2J471JX01D MuRata 16 C4 Film polypropylone capacitor 4.7nF 630V CBB STD STD 17 D1 Diode

MB39C601MB39C601--EVBEVB--CN01CN01

Evaluation Board ManualEvaluation Board Manual

3W Candle Lighting AC 220V 3W Candle Lighting AC 220V

MB39C601MB39C601--EVBEVB--CN01CN01

Rev 1.0

Mar. 2013

2. EVB Electrical Performance Specifications2. EVB Electrical Performance Specifications

1. Summarize1. Summarize

The driver MB39C601-EVB-CN01 has the driving capability of 3 watts. It can be

placed in LED candle light or other similar model

Ta = +25 , fac = 50Hz

PARAMETER TEST CONDITIONS MIN TYP MAX UNITS

Input Characteristics

Input Voltage Range 198 220 242 VAC

Maximum Input Current Vin=220Vac，50Hz,Pout=3W 20 mA

Output Characteristics load:6s1p

Output Voltage Output Current=170mA 18 V

Output Current 170 mA

Output Current Ripple Co=330uF 70 mAPP

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED

Pin Name Description

L AC line input

N AC line input

LED+ LED output (+)

LED- LED output (-)

3.Terminal Description3.Terminal Description3.Terminal Description3.Terminal Description3.Terminal Description3.Terminal Description3.Terminal Description3.Terminal Description

1

Output Current Ripple Co=330uF 70 mAPP

Systems Characteristics

Switching frequency 80 KHz

Efficiency Vin=220Vac，50H 75 %

Power Factor Vin=198Vac~242Vac,Pout=3W 0.93

PCB Size L*W*H 26*18.5*15 mm

Dimming Mode - Triac/No-triac -

Protection function OTP, OVP,

4. Test Setup4. Test Setup

(1) Recommended Test Setup

(Note)

This evaluation board is a high voltage. Should be handled carefully.

During operation, do not touch the evaluation board.

・Connect L and N to AC power.

・Please connect the measuring instrument and LED.(LED: 6LED series connected, VF = 3V, IF = 170mA)

AC Power SupplyVAC:220Vrms

DMMVOUT

+ -


(2) How to check

• Make sure that the terminals are connected correctly, and then turn on the AC POWER.

• LED light ,and the same time VOUT = 23V, IOUT = 300mA .The EVB working properly.

DMMIOUT

+ -

2

5. PCB layout5. PCB layout

MB39C601MB39C601MB39C601MB39C601MB39C601MB39C601MB39C601MB39C601--------EVBEVBEVBEVBEVBEVBEVBEVB--------CN01CN01CN01CN01CN01CN01CN01CN01

Top view(top side) Top view (bottom side)


Board Layout (top side)

3

Board Layout (bottom side))))

6. Schematic6. Schematic

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED4

7. BOM List7. BOM List

NOCOMPON

ENTDESCRIPTION PART No. MFR

1 U1 LED driver IC, SOP-8 MB39C601 Fujitsu

2 R6 Chip resistor, 5.1RΩ, ±5%,1/10W, 0603 RC0603JR-075R1L YAGEO

3 R11 Chip resistor, 33KΩ, ±1%,1/10W, 0603 RC0603FR-0733KL YAGEO



6 R4 Chip resistor, 200KΩ, ±5%,1/10W, 0603 RC0603JR-07200KL YAGEO


8 R7 Chip resistor, 3RΩ, ±5%,,1/8W, 0805 RC0805JR-073RL YAGEO


10 R1 Chip resistor, 1MΩ, ±5%,1/8W, 0805 RC0805JR-071ML YAGEO


Aluminum electrolytic capacitor,25V 330uF 105


12 C1Aluminum electrolytic capacitor,25V 330uF 105

8*12STD CHONG

13 C2Aluminum electrolytic capacitor,50V 10uF 105

4*12STD CHENGX

14 C9,C3,C8 Ceramic capacitor 50v 10nF, X7R, 0602 GRM188R71H103KA01D MuRata

15 C6 Ceramic capacitor 630v 470pF, X7R, 1206 GCM31A7U2J471JX01D MuRata

16 C4 Film polypropylone capacitor 4.7nF 630V CBB STD STD

17 D1 Diode Schottky 100V 1A,SMA SS110 MCC

18 D2 Ultra fast200mA 175V,SOT-23 MMBD1404 Fairchild

19 D3 Zener diode Glass 500mW, 18V, LL34 STD STD

20 D4 Ultra fast 800V 1A ,SMA STTH108A ST

21 BR1 Bridge rectifier,0.5A,600V,SO-4 MB6S Fairchild

22 Q1 N-mosfet,800V,3.8ohm,2.5A,IPAK STD3NK80 ST

23 T1Transformer Lp=1mH, Np: Ns:

Na=160T:27T:21TSTD BZD

8. Transformer Specification8. Transformer Specification

2, Primary windings inductance :Lp=1mH (100 KHz)，Air gap in the column and

inductance value is1mH ±10%,Leakinginductance as small as possible.

winding instruction

NameWinding

start pin→end pin

Wire

Diameter （（（（mm）））） Turns Wire

properties

Insulation

tape

Np-1（primary ） 1→20.12（Inner

diameter） 75

Ordinary

enameled

wire

3layers

Ns（secondary）10→9

0.28（Inner

diameter） 27

Ordinary

enameled

wire

3 layers

Na（auxiliary） 7→60.12 (Inner

diameter） 21

Ordinary

enameled

wire

3 layers

Np-2（primary） 2→3 0.12（Inner

75

Ordinary

enameled 3 layers

1, Magnetic core:EPC13 ,PC40，Bobbin 5pins+5 pins，horizontal type；

3, Sandwich winding, dipping, cut short 2pin, pull out or cut short 4pin、5pin、8pin

Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED6/ 15

Np-2（primary） 2→3 diameter） 75 enameled

wire

3 layers

9. Property data9. Property data99--1 Efficiency1 Efficiency 99--2 Power Factor2 Power Factor

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

190 200 210 220 230 240

Co

nvers

ion

eff

icie

ncy

η

Input Voltage 50Hz Vac [V]

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

0.95

1

190 200 210 220 230 240

Po

wer

Facto

r P

F



99--3 Line regulation3 Line regulation

LLoadoad：：6LEDs in series 6LEDs in series LLoadoad：：6LEDs in series 6LEDs in series

LLoadoad：：6LEDs in series 6LEDs in series

Input Voltage 50Hz Vac [V] Input Voltage 50Hz Vac [V]

0

20

40

60

80

100

120

140

160

180

200

190 200 210 220 230 240

Ou

tpu

t C

urr

en

t IL

ED

[m

A]


99--5 Output Ripple5 Output Ripple

VBULK

IOUT

99--6 Switching Waveform6 Switching Waveform

VAC=220V, 50Hz. LED =6 pcs in series

VSW(Q1 drain)

99--8 Turn8 Turn--Off WaveformOff Waveform99--7 Turn7 Turn--On WaveformOn Waveform

VBULKVBULK

IOUT

VOUT


VDD VDD

99--9 LED Open Waveform9 LED Open Waveform

VSW(Q1 drain)

IOUTIOUT

IOUT

VOUTVOUT

VOUT

7VDD

Do not Open too long Do not short too long

10. Evaluation board picture10. Evaluation board picture

Top View Bottom View


Specifications are subject to change without notice. For further information please contact each office.

11. 11. Revision HistoryRevision History

Name Version Remark

MB39C601-EVB-CN01 Rev 1.0


Specifications are subject to change without notice. For further information please contact each office.All Rights Reserved.All Rights Reserved.All Rights Reserved.All Rights Reserved.The contents of this document are subject to change without notice.Customers are advised to consult with sales representatives before ordering.The information, such as descriptions of function and application circuit examples, in this document are presented solely forthe purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information.FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information.Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products.Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.The company names and brand names herein are the trademarks or registered trademarks of their respective owners.10


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Evaluation Board Manual - fujitsu.com · 15 C6 Ceramic capacitor 630v 470pF, X7R, 1206 GCM31A7U2J471JX01D MuRata 16 C4 Film polypropylone capacitor 4.7nF 630V CBB STD STD 17 D1 Diode