FCP16N60

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2008Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCP16N60 / FCPF16N60 Rev. B1

FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

FCP16N60 / FCPF16N60600V N-Channel MOSFET

Features

650V @TJ= 150C

Typ. Rds(on) = 0.22

Ultra low gate charge (typ. Qg=55nC)

Low effective output capacitance (typ. Coss.eff=110pF)

100% avalanche tested

Description

SuperFETTM is, Fairchilds proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Thermal Characteristics

TO-220FCP Series

G SDTO-220FFCPF Series

G SD

D

G

S

Symbol Parameter FCP16N60 FCPF16N60 Unit

VDSS Drain-Source Voltage 600 V

ID Drain Current - Continuous (TC= 25C)

- Continuous (TC= 100C)

16

10.1

16*

10.1*

A

A

IDM Drain Current - Pulsed (Note 1) 48 48* A

VGSS Gate-Source voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 450 mJ

IAR Avalanche Current (Note 1) 16 A

EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC= 25C)

- Derate above 25C

167

1.33

37.9

0.3

W

W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TL Maximum Lead Temperature for Soldering Purpose,1/8 from Case for 5 Seconds

300 C

Symbol Parameter FCP16N60 FCPF16N60 Unit

RJC Thermal Resistance, Junction-to-Case 0.75 3.3 C/W

RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W

*Drain current limited by maximum junction temperature

December2008

SuperFETTM

RoHS Compliant

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2 www.fairchildsemi.com


FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Package Marking and Ordering Information

Electrical Characteristics TC= 25C unless otherwise noted

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS= 8A, VDD= 50V, RG= 25, Starting TJ= 25C

3. ISD16A, di/dt 200A/s, VDDBVDSS, Starting TJ= 25C

4. Pulse Test: Pulse width 300s, Duty Cycle 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCP16N60 FCP16N60 TO-220 - - 50

FCPF16N60 FCPF16N60 TO-220F - - 50

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID= 250A, TJ= 25C 600 -- -- V

VGS= 0V, ID= 250A, TJ= 150C -- 650 -- V

BVDSS/ TJ

Breakdown Voltage Temperature

CoefficientID= 250A, Referenced to 25C -- 0.6 -- V/C

BVDSS Drain-Source Avalanche Breakdown

Voltage

VGS= 0V, ID= 16A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS= 600V, VGS= 0V

VDS= 480V, TC= 125C

--

--

--

--

1

10

A

A

IGSSF Gate-Body Leakage Current, Forward VGS= 30V, VDS= 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS= -30V, VDS= 0V -- -- -100 nAOn Characteristi cs

VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250A 3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-ResistanceVGS= 10V, ID= 8A -- 0.22 0.26

gFS Forward Transconductance VDS= 40V, ID= 8A (Note 4) -- 11.5 -- S

Dynamic Characteristic s

Ciss Input Capacitance VDS= 25V, VGS= 0V,

f = 1.0MHz

-- 1730 2250 pF

Coss Output Capacitance -- 960 1150 pF

Crss Reverse Transfer Capacitance -- 85 -- pF

Coss Output Capacitance VDS= 480V, VGS= 0V, f = 1.0MHz -- 45 60 pF

Coss

eff. Effective Output Capacitance VDS

= 0V to 400V, VGS

= 0V -- 110 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD= 300V, ID= 16A

RG= 25

(Note 4, 5)

-- 42 85 ns

tr Turn-On Rise Time -- 130 270 ns

td(off) Turn-Off Delay Time -- 165 340 ns

tf Turn-Off Fall Time -- 90 190 ns

Qg Total Gate Charge VDS= 480V, ID= 16A

VGS= 10V

(Note 4, 5)

-- 55 70 nC

Qgs Gate-Source Charge -- 10.5 13 nC

Qgd Gate-Drain Charge -- 28 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 16 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 AVSD Drain-Source Diode Forward Voltage VGS= 0V, IS=16A -- -- 1.4 V

trr Reverse Recovery Time VGS= 0V, IS= 16A

dIF/dt =100A/s (Note 4)

-- 435 -- ns

Qrr Reverse Recovery Charge -- 7.0 -- C

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Typical Performance Characteristics

Figu re 1. On-Region Character ist ics Figure 2. Transfer Character ist ics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Currentand Temperatue

Figure 5. Capacitance Characteri sti cs Figure 6. Gate Charge Character istics

10-1

100

101

100

101

102

VGS

Top : 15.0 V 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

*Notes :

1. 250s Pulse Test

2. TC= 25

C

ID,DrainCurrent[A]

VDS

, Drain-Source Voltage [V]

2 4 6 8 10

100

101

102

*Note:

1. VDS

= 40V

2. 250s Pulse Test

-55oC

150oC

25oC

ID,DrainCurrent[A]

VGS

, Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45 500.0

0.1

0.2

0.3

0.4

0.5

0.6

VGS

= 20V

VGS

= 10V

*Note : TJ= 25oC

RDS(ON)[],

Drain-SourceOn-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

25oC150

oC

*Notes :

1. VGS

= 0V

2. 250 s Pulse Test

IDR

,ReverseDrainCurrent[A]

VSD

, Source-Drain Voltage [V]

10-1

100

101

0

1000

2000

3000

4000

5000

6000

7000C

iss= C

gs+ C

gd(C

ds= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

*Notes :

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance[pF]

VDS


0 10 20 30 40 50 600

2

4

6

8

10

12

VDS

= 250V

VDS

= 100V

VDS

= 480V

*Note : ID= 16A

VGS,Gate-SourceVoltage[V]

QG, Total Gate Charge [nC]

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Vol tage Variati on Figure 8. On-Resistance Var iat ionvs. Temperature vs. Temperature

Figure 9-1. Maximum Safe Operat ing Area Figure 9-2. Maximum Safe Operat ing Areafor FCP16N60 for FCPF16N60

Figure 10. Maximum Drain Current vs. Case Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

*Notes :

1. VGS

= 0 V

2. ID= 250 A

BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes :

1. VGS

= 10 V

2. ID= 8 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]

100

101

102

103

10-2

10-1

100

101

102

10 us

Operation in This Area

is Limited by RDS(on)

DC

1 ms

100 us

*Notes :

1. TC= 25

oC

2. TJ= 150

o

C 3. Single Pulse

ID,DrainCurrent[A]

VDS


100

101

102

103

10-2

10-1

100

101

102

100 ms

10 ms

10 us

Operation in This Area

is Limited by RDS(on)

DC

1 ms

100 us

*Notes :

1. TC= 25

oC

2. TJ= 150

o

C 3. Single Pulse

ID,DrainCurrent[A]

VDS


25 50 75 100 125 1500

5

10

15

20

ID,DrainCurren

t[A]

TC, Case Temperature [C]

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Figure 11-1. Transient Thermal Response Curve (FCP16N60)

Figure 11-2. Transient Thermal Response Curve (FCPF16N60)

10-5

10-4

10-3

10-2

10-1

100

101

10-2

10-1

100

*Notes :

1. ZJC

( t) = 0.75oC / W M a x .

2 . Duty Factor , D=t1/t

2

3. TJM

- TC= P

DM* Z

JC(t)

single pulse

D=0.5

0.02

0. 2

0.05

0. 1

0.01

ZJC

(t),ThermalRespons

e

t1, Square W ave Pu lse Dura t ion [ sec]

t1

PDM

t2

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

10-2

10-1

100

101

*Notes :

1. ZJC

( t) = 3.3oC / W M a x .

2 . Duty Factor , D=t1/t

2

3. TJM

- TC= P

DM* Z

JC(t)

single pulse

D=0.5

0.02

0. 2

0.05

0. 1

0.01

ZJC(t),ThermalResponse

t1, Square W ave Pu lse Dura t ion [ sec]

t1

PDM

t2

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Peak Diode Recovery d v/dt Test Circuit & Waveforms

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Mechanical Dimensions

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2.8

00.1

0

15.9

00.20

10

.080.3

0

18.9

5M

AX.

(1.7

0)

(3.7

0)

(3.0

0)

(1.4

6)

(1.0

0)

(45)

9.2

00.20

13.0

80.2

0

1.3

00.1

0

1.30+0.100.05

0.50+0.100.05

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

TO-220

Dimensions in Millimeters

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FCP16N60/FCP

F16N60

600V

N-ChannelM

OSFET

Mechanical Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30)

#1

3.3

00.1

0

15.8

00.2

0

15.8

70.2

06.6

80.2

0

9.7

50.3

0

4.7

00.2

0

10.16 0.20

(1.00x45)

2.54 0.20

0.80 0.10

9.40 0.20

2.76 0.200.35 0.10

3.18 0.10

2.54TYP

[2.54 0.20]

2.54TYP

[2.54 0.20]

0.50+0.100.05

TO-220F

Dimensions in Millimeters

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Rev. I37

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intended to be an exhaustive list of all such trademarks.

* EZSWITCH and FlashWriterare trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used herein:

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PRODUCT STATUS DEFINITIONSDefinition of Terms

Build it NowCorePLUSCorePOWERCROSSVOLTCTLCurrent Transfer LogicEcoSPARK

EfficentMaxEZSWITCH *

Fairchild

Fairchild Semiconductor

FACT Quiet SeriesFACT

FAST

FastvCore

FlashWriter *FPSF-PFS

FRFETGlobal Power ResourceSM

Green FPSGreen FPS e-SeriesGTOIntelliMAXISOPLANARMegaBuckMICROCOUPLERMicroFETMicroPakMillerDriveMotionMaxMotion-SPMOPTOLOGIC

OPTOPLANAR

PDP SPMPower-SPMPowerTrench

PowerXS

Programmable Active DroopQFET

QSQuiet SeriesRapidConfigure

Saving our world, 1mW /W /kW at a timeSmartMaxSMART STARTSPM

STEALTHSuperFETSuperSOT-3SuperSOT-6SuperSOT-8SupreMOSSyncFET

The Power Franchise

TinyBoostTinyBuckTinyLogic

TINYOPTOTinyPowerTinyPWMTinyWireSerDes

UHC

Ultra FRFETUniFETVCXVisualMaxXS

tm

tm

tm

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FCP16N60/FCPF16N60

600V

N-ChannelMOSFET

Documents

FCP16N60