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June 1998

FDS6912ADual N-Channel, Logic Level, PowerTrench TM MOSFET

General Description Features

Absolute Maximum Ratings T A = 25oC unless other wise noted

Symbol Parameter FDS6912A Units

VDSS Drain-Source Voltage 30 V

VGSS Gate-Source Voltage 20 V

ID Drain Current - Continuous (Note 1a) 6 A

- Pulsed 20

P D Power Dissipation for Single Operation (Note 1a) 2 W

(Note 1b) 1.6

(Note 1c) 0.9

TJ,TSTG Operating and Storage Temperature Range -55 to 150 C

THERMAL CHARACTERISTICS

R JA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W

R JC Thermal Resistance, Junction-to-Case (Note 1) 40 C/W

FDS6912A Rev.C

6 A, 30 V. R DS(ON) = 0.028 @ V GS = 10 VR DS(ON) = 0.035 @ V GS = 4.5 V.

Fast switching speed.

Low gate charge (typical 9 nC).

High performance trench technology for extremely low

R DS(ON) .

High power and current handling capability.

SOT-23 SuperSOT TM-8 SOIC-16SO-8 SOT-223SuperSOT TM-6

These N-Channel Logic Level MOSFETs areproduced using Fairchild Semiconductor'sadvanced PowerTrench process that has beenespecially tailored to minimize the on-stateresistance and yet maintain superior switchingperformance.

These devices are well suited for low voltage andbattery powered applications where low in-linepower loss and fast switching are required.

S1

D1

S2G1SO-8

D2D2

D1

G2

F D S

6 9 1 2

A

pin 11

5

7

8

2

3

4

6

1998 Fairchild Semiconductor Corporation

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Electrical Characteristics (T A = 25 OC unless otherwise noted )Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 A 30 V

BVDSS / TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25oC 23 mV /oC

IDSS Zero Gate Voltage Drain Current VDS = 24 V, V GS = 0 V 1 A

TJ = 55C 10 A

IGSSF Gate - Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, V DS = 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage V DS = VGS , ID = 250 A 1 1.5 3 V

VGS(th) / TJ Gate Threshold Voltage Temp. Coefficient ID = 250 A, Referenced to 25oC -4 mV /oC

RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A 0.023 0.028

TJ =125C 0.036 0.044

VGS = 4.5 V, I D = 5 A 0.029 0.035

ID(ON) On-State Drain Current V GS = 10 V, V DS = 5 V 20 A

gFS Forward Transconductance VDS = 15 V, I D= 6 A 18 S

DYNAMIC CHARACTERISTICS

C iss Input Capacitance V DS = 15 V, V GS = 0 V, f = 1.0 MHz

830 pF

Coss Output Capacitance 185 pF

C rss Reverse Transfer Capacitance 80 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on) Turn - On Delay Time VDS= 15 V, I D = 1 A 6 12 ns

tr Turn - On Rise Time VGS = 10 V , R GEN = 6 10 18 ns

tD(off) Turn - Off Delay Time 18 29 ns

tf Turn - Off Fall Time 5 12 ns

Qg Total Gate Charge V DS = 15 V, I D = 7.5 A, 9 13 nC

Qgs Gate-Source Charge VGS = 5 V 2.8 nCQgd Gate-Drain Charge 3.1 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 1.3 A (Note 2) 0.73 1.2 VNotes:

1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as t he solder mounting surface of the drain pins. R JC is guaranteed bydesign while R CA is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDS6912A Rev.C

c. 135 OC/W on a 0.003 in 2

pad of 2oz copper.b. 125 OC/W on a 0.02 in 2

pad of 2oz copper.a. 78 OC/W on a 0.5 in 2

pad of 2oz copper.

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FDS6912A Rev.C

0 1 2 3 40

8

16

24

32

40

V , DRAIN-SOURCE VOLTAGE (V)

I , D

R A I N - S

O U R C E C U R R E N T ( A )

DS

D

3.5V

3.0V

V =10VGS

4.0V

5.5V

2.5V

4.5V

Typical Electrical Characteristics

Figure 1. On-Region Characteristics . Figure 2. On-Resistance Variation withDrain Current and Gate Voltage .

-50 -25 0 25 50 75 100 125 1500.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (C)

D R A I N - S

O U R C E O N - R

E S I S T A N C E

J

R

, N O R M A L I Z E D

D S ( O N )

V = 10VGS

I = 6AD

Figure 3. On-Resistance Variation with Temperature .

T = -55CJ

1 2 3 4 50

5

10

15

20

25

V , GATE TO SOURCE VOLTAGE (V)

I , D

R A I N C U R R E N T ( A )

V =5.0VDS

GS

D

125C

25C

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward VoltageVariation with Source Currentand Temperature.

Figure 4. On-Resistance Variation withGate-to-Source Voltage.

0 6 12 18 24 300

1

2

3

4

5

I , DRAIN CURRENT (A)

D R A I N - S

O U R C E O N - R E

S I S T A N C E

D

V = 2.5VGS

R

, N O R M A L I Z E D

D S ( O N )

10V

3.5 V

3.0 V

4.5 V

0 0.2 0.4 0.6 0.8 1 1.2 1.40.001

0.01

0.1

1

20

V , BODY DIODE FORWARD VOLTAGE (V)

I , R

E V E R S E D R A I N C U R R E N T ( A )

25C

-55C

V = 0VGS

SD

S

T = 125CJ

0 2 4 6 8 100

0.03

0.06

0.09

0.12

0.15

V , GATE TO SOURCE VOLTAGE (V)GS

R

, O N - R

E S I S T A N C E ( O H M )

D S ( O N )

25C

I = 3AD

T = 125C A

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FDS6912A Rev.C

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area .

Typical Electrical Characteristics

0.0001 0.001 0.01 0.1 1 10 100 3000.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

T R A N S I E N T T H E R M A L R E S I S T A N C E

r ( t )

, N O R M A L I Z E D E F F E C T I V E

1

Single Pulse

D = 0.5

0.1

0.05

0.020.01

0.2

Duty Cycle, D = t /t1 2

R (t) = r(t) * RR =135 C/W

JA JA

JA

T - T = P * R (t) JA AJ

P(pk)

t1 t 2

Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c.

Transient thermal response will change depending on the circuit board design.

0.1 0.2 0.5 1 2 5 10 30

50

100

200

500

1500

V , DRAIN TO SOURCE VOLTAGE (V)

C A P A C I T A N C E ( p F )

DS

C iss

f = 1 MHz V = 0 VGS

Coss

C rss

0.1 0.5 1 2 5 10 30 500.01

0.05

0.5

2

10

50100

V , DRAIN-SOURCE VOLTAGE (V)

I , D

R A I N C U R R E N T ( A )

R D S ( O N

) L I M I T

D

A

D C

DS

1 s

1 0 0 m s

1 0 m s

1 m s

1 0 s V =10VSINGLE PULSER = 135C/W

T = 25C JA

GS

A

1 0 0 u s

0.01 0.1 0.5 10 50 100 3000

5

10

15

20

25

30

SINGLE PULSE TIME (SEC)

P O W E R ( W )

SINGLE PULSER =135 C/W

T = 25C JA

A

0 3 6 9 12 15 180

2

4

6

8

10

Q , GATE CHARGE (nC)

V

, G A T E - S

O U R C E V O L T A G E ( V )

g

G S

I = 6AD10V

15V

V = 5VDS