Friedhelm Bauer Bipolar Super Junction ABB Switzerland Ltd. … · 2007-01-24 · -> spin-off: latch-free IGBT 400 K 1.2 kV trade-off curves: SJBT versus SPT IGBT 100 A vs 600 V,

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Bipolar Super Junction Power Devices:

A Case Study for Complex Numerical

Modelling

Friedhelm BauerABB Switzerland Ltd.

ROBUSPIC workshopISPSD’06 Napoli

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-07IS THERE LIFE IN SPACE??IS THERE LIFE IN SPACE??

COOLMOSCOOLMOS

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……fromfrom VDMOSFET VDMOSFET to to IGBTIGBT… …

PAST DEVELOPMENTPAST DEVELOPMENT

n-doped drain

gate

p-doped anode

gate

substitutesubstitute

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……fromfrom SJ MOSFET SJ MOSFET to to SJBTSJBT… …

FUTURE DEVELOPMENT?FUTURE DEVELOPMENT?

n-doped drain

gate

p-doped anode

gate

addadd p p -- injectorinjector

& n - buffer

IEEE Trans. El. IEEE Trans. El. DevicesDevicesVol. 53, No. 4Vol. 53, No. 4pp. 884 pp. 884 --890890

20022002

20062006

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-07BIPOLAR SUPER JUNCTION CONCEPTSBIPOLAR SUPER JUNCTION CONCEPTS

SJBT SJBT implementationimplementation

forfor 1.2 kV1.2 kV

pillarpillar dopingdoping::1E16 cm1E16 cm--33

investigationinvestigationvariable:variable:n n –– bufferbuffer

dopingdoping

p-well

cathode gate

N-source

n-pillarp-pillar

n-bufferp-emitter

anode

x

y4

0.1

100

10 0.5

1.5 1.5

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ExampleExample forfor SJBT SJBT numericalnumerical gridgrid

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-07SIMULATED SJBT CHARACTERISTICS ( 1 )SIMULATED SJBT CHARACTERISTICS ( 1 )

1.0E-10

1.0E-09

1.0E-08

1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+000 500 1000 1500 2000

Vce in V

Ic in

A

300 K

400 K

circle: SJBT

square: IGBT

triangle: SJ MOSFETactive area: 1.216 cm2

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0

50

100

150

200

0 1 2 3 4 5

Vce in V @ 400 K

Ic in

A @

400

K

active area: 1.216 cm2

Vge in 1 V steps

15 V

5 V

6 V

4 V

3 V

0

500

1000

1500

2000

2500

3000

3500

0 5 10 15 20 25 30 35

Vce in V @ 400 K

Ic in

A @

400

K

active area: 1.216 cm2 Vge in 1 V steps 15 V10 V

8 V

6 V

4 V

SJBT SJBT onon--statestate::in in thethe neighbourhoodneighbourhood of IGBTof IGBT

0

200

400

600

800

1000

1200

1400

0 5 10 15 20 25 30 35

Vce in V @ 400 K

Ic in

A @

400

K

active area: 1.216 cm2 SJBT

IGBT: Vge = 15 V

Vge = 5 V

Vge = 4 V

Vge = 3 V

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-07SIMULATED SJBT CHARACTERISTICS ( 3 )SIMULATED SJBT CHARACTERISTICS ( 3 )SJBT SJBT turnturn--offoff losseslosses as as lowlow as 10 as 10 –– 20% of IGBT 20% of IGBT losseslosses

0

200

400

600

800

1000

1200

1400

4.0E-07 6.0E-07 8.0E-07 1.0E-06 1.2E-06 1.4E-06

time in s

Ic in

A, V

ce in

V


T = 400 K

IGBTSJBT

Vce

Ic

360 A vs 600 V

0

2

4

6

8

10

12

14

1.2 1.4 1.6 1.8 2 2.2 2.4

Vce,on in V

Eoff

in m

J


SJBT: 100 um wafer thickness

PT IGBT: 125 um wafer thickness

trench IGBT

SJ-MOSFET: 100 um wafer thickness

100 A vs 600 V

T = 400 K

transientstransients

tradetrade--offoff

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SJBT SJBT shortshort circuitcircuit capabilitycapability similarsimilar to IGBTto IGBT

0

200

400

600

800

1000

1200

1400

1600

1800

0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05

time in s

Ic in

A, V

ce in

V

active area: 1.216 cm2To = 400 K

15 V

17 V19 V21 V

23 V

25 V

Vge in V IGBTIc

Vce

0

200

400

600

800

1000

1200

1400

1600

1800

0.0E+00 5.0E-06 1.0E-05 1.5E-05 2.0E-05 2.5E-05

time in s

Ic in

A, V

ce in

V

To = 400 K active area: 1.216 cm2

Vge in V

4.0 to 4.8 V in 0.1 V steps

5.1 V

5.3 V

SJBT

Vce

350

400

450

500

550

600

650

700

750

800

850

0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 5.0E-05 6.0E-05

time in sTm

ax in

K

To = 400 KIGBT


Vge in V

15 V

17 V

19 V21 V

23 V

25 V

350

400

450

500

550

600

650

700

750

800

850

0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 5.0E-05 6.0E-05

time in s

Tmax

in K

SJBT active area: 1.216 cm2

To = 400 K

Vge in V

4 V to 4.8 V in 0.1 V steps

5.1 V

5.3 V

currentcurrent

temperaturetemperature

SJBTSJBT IGBTIGBT

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-07UNDERSTANDING THE SJBT ( 1 )UNDERSTANDING THE SJBT ( 1 )bufferbuffer dopingdoping variationvariation –– effecteffect on on onon--statestate

0

50

100

150

200

250

0 0.5 1 1.5 2 2.5 3

Vce in V

Ic in

A/c

m2

peak buffer concentration:

1E18 cm-32E17 cm-3

1E17 cm-38E16 cm-3

6E16 cm-34E16 cm-3

2E16 cm-3

1E16 cm-3

0

500

1000

1500

2000

2500

3000

3500

4000

0 5 10 15 20 25 30

Vce in V

Ic in

A/c

m2

peak buffer concentration:

1E18 cm-3

2E17 cm-3

1E17 cm-3

8E16 cm-3

6E16 cm-34E16 cm-3

2E16 cm-3

1E16 cm-3

unipolar unipolar –– to to -- bipolar bipolar transitiontransition

VceVce = 3 V, T = 400 K= 3 V, T = 400 K

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el. potential el. potential alongalong pillarspillars @ @ VceVce = 3 V, T = 400 K= 3 V, T = 400 K

UNDERSTANDING THE SJBT ( 2 )UNDERSTANDING THE SJBT ( 2 )

-1

0

1

2

3

4

0 20 40 60 80 100

thickness in um

elec

tric

al p

oten

tial i

n V

n-pillar

p-pillar

SJ MOSFET

nono currentcurrent in p in p –– pillarpillardrift drift transporttransport in in nn--pillarpillar

-0.5

0

0.5

1

1.5

2

2.5

3

3.5

0 20 40 60 80 100

thickness in um

el. p

oten

tial i

n p-

pilla

r in

V

peak buffer doping:

2E16 cm-3

4E16 cm-36E16 cm-3

8E16 cm-31E17 cm-3

2E17 cm-34E17 cm-3

SJBT

currentcurrent in n & p in n & p –– pillarspillarsdrift & drift & diffusiondiffusion in n & in n & pp--pillarspillars

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-07UNDERSTANDING THE SJBT ( 3 )UNDERSTANDING THE SJBT ( 3 )

1.0E+15

1.0E+16

1.0E+17

0 20 40 60 80 100

thickness in um

hole

den

sity

in p

-pill

ar in

cm

-3

peak buffer doping: 2E16 cm-34E16 cm-36E16 cm-3

8E16 cm-3

1E17 cm-3

2E17 cm-3

4E17 cm-3

1.0E+04

1.0E+06

1.0E+08

1.0E+10

1.0E+12

1.0E+14

1.0E+16

1.0E+18

1.0E+20

0 20 40 60 80 100

thickness in um

elec

tron

den

sity

in p

-pill

ar in

cm

-3

peak buffer doping:

2E16 cm-3

4E16 cm-36E16 cm-3

8E16 cm-3

1E17 cm-3

2E17 cm-3

4E17 cm-3

1E18 cm-3

1.0E+15

1.0E+16

1.0E+17

1.0E+18

0 20 40 60 80 100thickness in um

elec

tron

den

sity

in n

-pill

ar in

cm

-3 peak buffer doping:

2E16 cm-34E16 cm-3

6E16 cm-3

8E16 cm-3

1E17 cm-32E17 cm-3

4E17 cm-31E18 cm-3

1.0E+05

1.0E+07

1.0E+09

1.0E+11

1.0E+13

1.0E+15

1.0E+17

1.0E+19

0 20 40 60 80 100thickness in um

hole

den

sity

in n

-pill

ar in

cm

-3 peak buffer doping:2E16 cm-34E16 cm-36E16 cm-3 8E16 cm-3

1E17 cm-32E17 cm-34E17 cm-3

1E18 cm-3

SJBT SJBT onon--statestate: : carriercarrier distributionsdistributions

pp--pillarpillar nn--pillarpillar

majmaj

minmin

VVcece = 3 V, T = 400 K= 3 V, T = 400 K

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-07ELECTRONS IN THE SJBT: ELECTRONS IN THE SJBT: VVcece = 3 V, 400 K= 3 V, 400 K

N-pillarP-pillar cathode

highgain

mediumgain

lowgain

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-07HOLES IN THE SJBT: HOLES IN THE SJBT: VVcece = 3 V, 400 K= 3 V, 400 K

N-pillarP-pillar cathode

highgain

mediumgain

lowgain

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P-pillar

MOS gate

PNP

SJBT EQUIVALENT CIRCUITSJBT EQUIVALENT CIRCUIT

N-pillar

P-pillar P-emitter Cathode

P-collector

PNP

Anode

N-buffer

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-07ECONOMICALLY VIABLE SJBTECONOMICALLY VIABLE SJBT1.2 kV hybrid – structure consisting of

-partial SJ zone with moderately high columns-partial PIN zone with n- -doped base region-> spin-off: latch-free IGBT

400 K 1.2 kV trade-off curves: SJBT versus SPT IGBT 100 A vs 600 V, 400 K hard inductive switching; variable column height

0

5

10

15

20

25

1.2 1.4 1.6 1.8 2 2.2 2.4

Vce,on in V @ 100 A/cm2, 400 K

Eoff

in m

J @

400

K


SJBT: 100 um wafer thickness

SPT IGBT: 125 um wafer thickness

carrier lifetimes: 8 us ( electrons ), 2 us ( holes )

simulation simulation

experiment

SJ-MOSFET: 100 um wafer thickness

reducing the column height

92 um

80 um

70 um

60 um

50 um

40 um

30 um

20 um

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-07SUPER JUNCTION MCTSUPER JUNCTION MCT

gate

p p -- basebase

nn--pillarpillarpp--pillarpillar

nn--bufferbuffer

n n -- emitteremitter

p p -- emitteremitter

turnturn--ononturnturn--offoff ++

n n -- emitteremitter

PNPPNP NPNNPN

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SJMCT SJMCT implementationimplementation

forfor 1.2 kV1.2 kV

pillarpillar dopingdoping::1E16 cm1E16 cm--33

investigationinvestigationvariable:variable:

p p –– emitteremitterdopingdoping

p-well

cathode gate

n-pillarp-pillar

n-bufferp-emitter

anode

x

y4

0.1

100

10 0.5

1.5 1.5

n-emitter

p-base

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-07WHY SJMCT ( 1 )?WHY SJMCT ( 1 )?

n,pn,p

NNdd

n,pn,p

NNdd, N, Naa

log

n, p

, Nlo

g n,

p, N

dd, N, N

aa

log

n, p

, Nlo

g n,

p, N

dd, N, N

aa

widthwidth of of middlemiddle regionregion widthwidth of of middlemiddle regionregion

conventionalconventional pnpnpnpn super super junctionjunction pnpnpnpn

el el injectorinjector el el injectorinjector hole hole injectorinjectorhole hole injectorinjector

middlemiddle basebaseregionregion

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-07WHY SJMCT ( 2 )?WHY SJMCT ( 2 )?

1.0E+15

1.0E+16

1.0E+17

0 10 20 30 40 50 60 70 80 90 100

thickness in um

n, p

in c

m-3

in n

- and

p-p

illar

anodecathode

el in n-pillar

el in p-pillar

holes in p-pillar

holes in n-pillar

1.0E+15

1.0E+16

1.0E+17

0 10 20 30 40 50 60 70 80 90 100

thickness in um

n, p

in c

m-3

in n

- and

p-p

liiar

anodecathode

el in n-pillar

el in p-pillar

holes in p-pillar

holes in n-pillar

nnpp

anodeanode

carriercarrier distributionsdistributionsat 100 A at 100 A onon--statestate weakweak emitteremitter

strongstrong emitteremitter

cathodecathode

weakweakemitteremitter

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-07PERFORMANCE COMPARISON ( 1 )PERFORMANCE COMPARISON ( 1 )

0

50

100

150

200

250

300

350

400

0 2 4 6 8 10 12

Vce,on in V @ 400 K

Ic in

A @

400

K

SJMCT_100w8 SJBT_100w8 IGBT SJ MOSFET_100w8

T = 400 K


Vge = 15 V

0

5

10

15

20

25

30

35

0 50 100 150 200 250 300 350 400

Ic in A @ 400 K

Eoff

in m

J @

Vce

= 6

00 V

, T =

400

K

SJMCT_100w8

SJBT_100w8

SJ MOSFET_100w8

IGBTT = 400 K


Vcc = 600 V

onon--statestateswitchingswitching

layout layout exampleexample: 1.2 kV: 1.2 kV

SJ MOSFETSJ MOSFETIGBTIGBTSJBTSJBT

SJMCTSJMCT

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-07PERFORMANCE COMPARISON ( 2 )PERFORMANCE COMPARISON ( 2 )

onon--statestate

0

2

4

6

8

10

12

0 0.5 1 1.5 2 2.5 3 3.5 4

Vce,on in V @ 100 A, 600 V

Eoff

in m

J @

100

A, 6

00 V


SJ MOSFETSJ MOSFETIGBTIGBTSJBTSJBT

SJMCTSJMCT300 K300 K

300 K300 K

300 K300 K

300 K300 K500 K500 K

500 K500 K

500 K500 K

500 K500 K

hardhard inductiveinductive switchingswitching

100 A 100 A vsvs 600 V600 V

T T fromfrom 300300to 500 Kto 500 K

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-07SJBT APPLICATIONSJBT APPLICATION

zerozero voltagevoltage switchingswitching

turnturn--onon at high at high dIdIcc//dtdt


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-07CONCLUSIONSCONCLUSIONS

Bipolar super Bipolar super junctionjunction powerpower devicedevice conceptsconcepts

•• feasibilityfeasibility proofproof ( ( numericalnumerical simulationsimulation ))

diodediode ( ( earlyearly publishedpublished workwork ) ) SJBTSJBT SJMCTSJMCT

•• realizationrealization notnot interestinginteresting to date to date

technology technology complexitycomplexitylimitedlimited blockingblocking capabilitycapabilitycompetitioncompetition forfor CoolMOSCoolMOS andand IGBTIGBT

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-07OUTLOOKOUTLOOK

WideWide bandgapbandgap ( WBG ) bipolar super ( WBG ) bipolar super junctionjunction powerpower devicedevice

gate

SiSi

SiCSiC

•• lowlow EPI EPI thicknessthickness•• widewide cellcell pitchpitch•• highhigh--αα, , saturatedsaturated BJT BJT •• dual unipolar modedual unipolar mode

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Documents

Friedhelm Bauer Bipolar Super Junction ABB Switzerland Ltd. … · 2007-01-24 · -> spin-off: latch-free IGBT 400 K 1.2 kV trade-off curves: SJBT versus SPT IGBT 100 A vs 600 V,